SPL980-10-9-PD
Abstract: slp980
Text: SPL980-10-9-PD Pigtailed Coaxial Laser Diode Features Applications • • • • • • 980 nm SM Fiber Coaxial package Built-in PD Medical laser treatment Communication Electrical Connection Pin Configuration Bottom View n-type PIN 1 2 3 Function LD Cathode
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SPL980-10-9-PD
SLP980-10-9-PD
SPL980-10-9-PD
slp980
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SPL850-10-4P-PD
Abstract: No abstract text available
Text: SPL850-10-4P-PD TECHNICAL DATA Pigtailed Coaxial Laser Diode Features Applications • • • • • • 850 nm PM Fiber Coaxial package Built-in PD Medical laser treatment Printing Electrical Connection Pin Configuration PIN 1 2 3 Bottom View Function PD Anode
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SPL850-10-4P-PD
SLP850-10-4P-PD
SPL850-10-4P-PD
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TOLD9442M
Abstract: laser diode toshiba 650
Text: TOLD9442M TOSHIBA TOSHIBA LASER DAIODE InGaAlP TOLD9442M Lasing Wavelength : = 650 nm Typ. Optical Output Power : P0 = 5 mW Operation Case Temperature : Tc = —10~60°C Pin Connection 10 0 3 LD 0 @ PD I 1. LASER DIODE CATHODE 2. LASER DIODE ANODE PHOTODIODE CATHODE
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OLD9442M
TOLD9442M
laser diode toshiba 650
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laser diode toshiba
Abstract: TOLD9231M 670NM Laser-Diode told daiode
Text: TOLD9231M TOSHIBA TOSHIBA LASER DAIODE InGaAlP TOLD9231M Lasing Wavelength : Ap = 670nm Typ. Optical Output Power : P0 = 5mW Operation Case Temperature : T e = —10~60°C Pin Connection 10 0 3 LD 0 @ PD I 1. LASER DIODE CATHODE 2. LASER DIODE ANODE PHOTODIODE CATHODE
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OLD9231M
670nm
15-4A1
laser diode toshiba
TOLD9231M
670NM Laser-Diode
told
daiode
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laser diode toshiba
Abstract: told laser diode toshiba 650 650nm 5mw laser diode 650NM laser diode 5mw
Text: TOLD9441 MD TOSHIBA TOSHIBA LASER DAIODE InGaAlP TOLD9441 MD Lasing Wavelength : Ap = 650nm Typ. Optical Output Power : P0 = 5mW Operation Case Temperature : T e = —10~70°C Pin Connection 10 0 3 LD 0 @ PD I 1. LASER DIODE ANODE 2. LASER DIODE CATHODE
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OLD9441
650nm
15-4A1
646nm
651nm
656nm
10kHz,
500MHz)
laser diode toshiba
told
laser diode toshiba 650
650nm 5mw laser diode
650NM laser diode 5mw
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laser diode toshiba
Abstract: told 2 Wavelength Laser Diode 670NM Laser-Diode laser diode 670nm Shibaura
Text: TOLD9221M TOSHIBA TOSHIBA LASER DAIODE InGaAlP TOLD9221M Lasing Wavelength : Ap = 670nm Typ. Optical Output Power : P0 = 5mW Operation Case Temperature : T e = —10~60°C Pin Connection 10 LD 0 0 3 I @ PD 1. LASER DIODE CATHODE 2. LASER DIODE ANODE PHOTODIODE CATHODE
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OLD9221M
670nm
15-4A1
laser diode toshiba
told
2 Wavelength Laser Diode
670NM Laser-Diode
laser diode 670nm
Shibaura
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laser diode toshiba
Abstract: TOLD9221M 670NM Laser-Diode DAiode
Text: TOLD9221M TO SH IBA TOSHIBA LASER DAIODE InGaAlP TOLD9221M Lasing Wavelength : Ap = 670nm Typ. Optical Output Power : P0 = 5mW Operation Case Temperature : T e = —10~60°C Pin Connection 10 0 3 LD 0 @ PD I 1. LASER DIODE CATHODE 2. LASER DIODE ANODE PHOTODIODE CATHODE
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OLD9221M
670nm
laser diode toshiba
TOLD9221M
670NM Laser-Diode
DAiode
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laser diode toshiba
Abstract: 670NM Laser-Diode laser diode 670nm
Text: TOLD9231M TO SH IBA TOSHIBA LASER DAIODE InGaAlP TOLD9231M Lasing Wavelength : Ap = 670nm Typ. Optical Output Power : P0 = 5mW Operation Case Temperature : T e = —10~60°C Pin Connection 10 0 3 LD 0 @ PD I 1. LASER DIODE CATHODE 2. LASER DIODE ANODE PHOTODIODE CATHODE
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OLD9231M
670nm
laser diode toshiba
670NM Laser-Diode
laser diode 670nm
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laser diode toshiba
Abstract: TOLD9442M laser diode toshiba 650 TOLD told9442 daiode
Text: TO SH IBA TOLD9442M TOSHIBA LASER DAIODE InGaAlP TOLD9442M Lasing Wavelength : Ap = 650 nm Typ. Optical Output Power : P0 = 5 mW Operation Case Temperature : Tc = —10~60°C Pin Connection 10 0 3 LD 0 @ PD I 1. LASER DIODE CATHODE 2. LASER DIODE ANODE PHOTODIODE CATHODE
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OLD9442M
OLD9442
laser diode toshiba
TOLD9442M
laser diode toshiba 650
TOLD
told9442
daiode
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NX8346
Abstract: No abstract text available
Text: LASER DIODE NX8346TS 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION DESCRIPTION The NX8346TS is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical subassembly) with InGaAs monitor PIN-PD in a receptacle type package
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NX8346TS
NX8346TS
PL10723EJ01V0DS
NX8346
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Thermistor bth 100
Abstract: 10 gb laser diode DFB ea 10 gb diode pin 1550 nm
Text: Drawing No. JOG-00853 OKI Electronics Components Preliminary OL5150M Rev. 3:[10. 2001] 1550 nm 10 Gb/s EA Modulator Integrated DFB Laser 1. DESCRIPTION OL5150M is a 1550-nm DFB laser diode monolithically integrated with an electro-absorption EA modulator for 10 Gb/s operation in a 7-pin package with a K-connector.
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JOG-00853
OL5150M
OL5150M
1550-nm
OC-192)
Thermistor bth 100
10 gb laser diode
DFB ea
10 gb diode pin 1550 nm
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nec 2702
Abstract: 2702 NEC NX8341 NX8341UH NX8341UJ NX8341UL NX8341TB-AZ 10 gb laser diode 5PIN g 995
Text: LASER DIODE NX8341 Series 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION DESCRIPTION The NX8341 Series is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical subassembly) with InGaAs monitor PIN-PD in a receptacle type package
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NX8341
PL10525EJ03V0DS
nec 2702
2702 NEC
NX8341UH
NX8341UJ
NX8341UL
NX8341TB-AZ
10 gb laser diode
5PIN
g 995
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NX8341
Abstract: NX8341UH NX8341UJ NX8341UL NX8341UN 10 gb laser diode NX8341UJ-AZ
Text: LASER DIODE NX8341 Series 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION DESCRIPTION The NX8341 Series is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical subassembly) with InGaAs monitor PIN-PD in a receptacle type package
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NX8341
PL10525EJ02V0DS
NX8341UH
NX8341UJ
NX8341UL
NX8341UN
10 gb laser diode
NX8341UJ-AZ
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TOSA pcb
Abstract: No abstract text available
Text: LASER DIODE NX8346TB,NX8346TY 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION DESCRIPTION The NX8346TB and NX8346TY are 1 310 nm Multiple Quantum Wells MQW structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical subassembly) with InGaAs monitor PIN-PD in a receptacle type
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NX8346TB
NX8346TY
NX8346TY
OC-192
PL10722EJ01V0DS
TOSA pcb
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NEC DIODE LASER
Abstract: No abstract text available
Text: DATA SHEET LASER DIODE NX8346TS 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION DESCRIPTION The NX8346TS is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical subassembly) with InGaAs monitor PIN-PD in a receptacle type package
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NX8346TS
NX8346TS
NEC DIODE LASER
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Laser Diode 14 pin DIL
Abstract: LSC3100 LSC3300 LSC3X00 spot light size photodiode
Text: 14 Pin DIL Uncooled Laser Modules Technical Data LSC3X00 Features Description • Low Cost Plastic Package 14 Pin DIL • LSC3300: 100 µW (-10 dBm) Min. Power Output LSC3100: 1 mW (0 dBm) Min. Power Output • 1280 - 1330 nm Wavelength • Hermetic Laser Module
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LSC3X00
LSC3300:
LSC3100:
LSC3X00
Laser Diode 14 pin DIL
LSC3100
LSC3300
spot light size photodiode
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Untitled
Abstract: No abstract text available
Text: DATA SHEET LASER DIODE NX8346TB,NX8346TY 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION DESCRIPTION The NX8346TB and NX8346TY are 1 310 nm Multiple Quantum Wells MQW structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical subassembly) with InGaAs monitor PIN-PD in a receptacle type
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NX8346TB
NX8346TY
NX8346TY
OC-192
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NX8341UJ
Abstract: NX8341 NX8341UH NX8341UL NX8341UN 6R01 10 gb laser diode NX8341TB
Text: DATA SHEET LASER DIODE NX8341 Series 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION DESCRIPTION The NX8341 Series is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical subassembly) with InGaAs monitor PIN-PD in a receptacle type package
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NX8341
NX8341UJ
NX8341UH
NX8341UL
NX8341UN
6R01
10 gb laser diode
NX8341TB
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet NX6414EH LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR GIGABIT ETHERNET AND Point to Point APPLICATION R08DS0042EJ0100 Rev.1.00 Jun 10, 2011 DESCRIPTION The NX6414EH is a 1 490 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.
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NX6414EH
R08DS0042EJ0100
NX6414EH
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laser diode toshiba
Abstract: 2 Wavelength Laser Diode 650NM laser diode 5mw DAiode laser diode toshiba 650
Text: TOLD9441 MD TO SH IBA TOSHIBA LASER DAIODE InGaAlP T O L D 9 4 4 1 MD Lasing Wavelength : Ap = 650nm Typ. Optical Output Power : P0 = 5mW Operation Case Temperature : T e = —10~70°C Pin Connection 10 LD 0 0 3 @ PD I 1. LASER DIODE ANODE 2. LASER DIODE CATHODE
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OLD9441
650nm
laser diode toshiba
2 Wavelength Laser Diode
650NM laser diode 5mw
DAiode
laser diode toshiba 650
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nec 2702
Abstract: nec 2702 K
Text: DATA SHEET LASER DIODE NX8341 Series 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION DESCRIPTION The NX8341 Series is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical subassembly) with InGaAs monitor PIN-PD in a receptacle type package
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NX8341
nec 2702
nec 2702 K
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet NX6342EP LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s BASE-LR/LW APPLICATION R08DS0050EJ0100 Rev.1.00 Jan 19, 2012 DESCRIPTION The NX6342EP is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.
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NX6342EP
NX6342EP
R08DS0050EJ0100
IEEE802
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet NX6240GP LASER DIODE 1 270 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s E-PON ONU APPLICATION R08DS0057EJ0100 Rev.1.00 Mar 01, 2012 DESCRIPTION The NX6240GP is a 1 270 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.
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NX6240GP
NX6240GP
R08DS0057EJ0100
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nec 2702
Abstract: No abstract text available
Text: DATA SHEET LASER DIODE NX8341 Series 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION DESCRIPTION The NX8341 Series is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical subassembly) with InGaAs monitor PIN-PD in a receptacle type package
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NX8341
nec 2702
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