PH1516-100
Abstract: No abstract text available
Text: an AMP comDanv Wireless Bipolar 1450 - 1550 MHz Power Transistor, 1 OOW PH1516-100 Features - _~. - - Designed for Linear Amplifier Applications Class AB: -32 dBc Typ 3rd IMD at 100 Watts PEP Common Emitter Configuration Internal Input Impedance Matching
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PH1516-100
5000pF
lN5417
PH1516-100
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PDF
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ZTX453
Abstract: No abstract text available
Text: ZTX452 Not Recommended for New Design Please Use ZTX453 ZTX452 ZTX453 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 2 MARCH 1994 FEATURES * 100 Volt VCEO * 1 Amp continuous current * Ptot = 1 Watt TYPICAL CHARACTERISTICS 100 hFE - Normalised Gain %
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ZTX452
ZTX453
ZTX453
100ms
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PDF
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Bvn 10k
Abstract: No abstract text available
Text: MIL-PRF-38534 CERTIFIED FACILITY M.S.KENNEDY CORP. 25 AMP, 500 VOLT IGBT PLUS DIODE FULLY ISOLATED SMART POWER 3-PHASE MOTOR DRIVE POWER HYBRID 4358 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: 500V, 25 Amp Capability at 100°C Fully Isolated Bridge
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MIL-PRF-38534
20KHz
MSK4358
Bvn 10k
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PDF
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Untitled
Abstract: No abstract text available
Text: MIL-PRF-38534 CERTIFIED FACILITY M.S.KENNEDY CORP. 25 AMP, 500 VOLT IGBT PLUS DIODE FULLY ISOLATED SMART POWER 3-PHASE MOTOR DRIVE POWER HYBRID 4358 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: 500V, 25 Amp Capability at 100°C Fully Isolated Bridge
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Original
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MIL-PRF-38534
20KHz
MSK4358
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PDF
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Untitled
Abstract: No abstract text available
Text: MIL-PRF-38534 CERTIFIED FACILITY M.S.KENNEDY CORP. 25 AMP, 500 VOLT IGBT PLUS DIODE FULLY ISOLATED SMART POWER 3-PHASE MOTOR DRIVE POWER HYBRID 4358 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: 500V, 25 Amp Capability at 100°C Fully Isolated Bridge
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Original
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MIL-PRF-38534
20KHz
MSK4358
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PDF
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LH0041 equivalent
Abstract: No abstract text available
Text: MIL-PRF-38534 & 38535 CERTIFIED FACILITY RAD HARD M.S KENNEDY CORP. HIGH POWER MEDIUM POWER OP-AMP OP-AMP 4707 Dey Road Liverpool, N.Y. 13088 0041RH 315 701-6751 FEATURES: Manufactured using Space Qualified RH101 Die Total Dose Hardened to 100 Krads(Si) (Method 1019.7 Condition A)
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Original
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MIL-PRF-38534
0041RH
RH101
LH0041Replacement
0041RH
replace8548-65
0041HRH
MSK0041KRH
MIL-PRF-38534
LH0041 equivalent
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PDF
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Untitled
Abstract: No abstract text available
Text: MIL-PRF-38534 & 38535 CERTIFIED FACILITY RAD HARD M.S KENNEDY CORP. HIGH POWER MEDIUM POWER OP-AMP OP-AMP 4707 Dey Road Liverpool, N.Y. 13088 0041RH 315 701-6751 FEATURES: Manufactured using Space Qualified RH101 Die Total Dose Hardened to 100 Krads(Si) (Method 1019.7 Condition A)
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Original
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MIL-PRF-38534
0041RH
RH101
LH0041Replacement
0041RH
LH0041.
0041HRH
MSK0041KRH
MIL-PRF-38534
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PDF
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Untitled
Abstract: No abstract text available
Text: industrial power transistors 135 SILICON NPN TRANSISTORS 15 Amp TYPE NUMBERS RATED BREAKDOWN VOLTAGES 2N 3055 SOT 9201 SOT 9202 SOT 9203 SOT 9204 SOT 9205 SOT 9206 SOT 9207 SOT 9208 SOT 9209 SOT 9210 Vea 100 55 100 120 140 55 80 100 120 140 40 VeE 60 45
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1I111AX
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PDF
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Untitled
Abstract: No abstract text available
Text: MIL-PRF-38534 & 38535 CERTIFIED FACILITY RAD HARD M.S KENNEDY CORP. HIGH POWER MEDIUM POWER OP-AMP OP-AMP 4707 Dey Road Liverpool, N.Y. 13088 0041RH 315 701-6751 FEATURES: Manufactured using Space Qualified RH101 Die Total Dose Hardened to 100 Krads(Si) (Method 1019.7 Condition A)
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Original
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MIL-PRF-38534
0041RH
RH101
LH0041Replacement
0041RH
0041HRH
MIL-PRF-38534
MSK0041KRH
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PDF
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ZTX453
Abstract: 80 Amp current 100 volt diode ZTX452
Text: ZTX452 ZTX453 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 2 MARCH 1994 FEATURES * 100 Volt VCEO * 1 Amp continuous current * Ptot = 1 Watt TYPICAL CHARACTERISTICS 100 hFE - Normalised Gain % VCE(sat) - (Volts) 0.8 0.6 IC/IB=10 0.4 0.2 0.01 0.1 10
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ZTX452
ZTX453
150mA,
100MHz
ZTX453
80 Amp current 100 volt diode
ZTX452
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PDF
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transistor 1 j42
Abstract: transistor j42 nj TRANSISTOR 2L43 UF281
Text: an AMP company RF MOSFET Power 100 - 500 MHz Transistor, IOW, 28V UF281 OP Features l N-Channel Enhancement Mode Device l DMOS Structure Lower Capacitances l Common Source Configuration l Lower Noise Floor l 100 MHz to 500 MHz Operation l for Broadband Operation
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UF281
lF281OP
transistor 1 j42
transistor j42
nj TRANSISTOR
2L43
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PDF
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2N3055H
Abstract: 2N3055H+RCA
Text: Silicon Power Transistor 2N3055H Technical Data Typical Applications : These devices are designed for general purpose switching and amplifier applications. Specification Fetaures : F Complementary NPN Silicon Power Transistor F 15 Amp / 100 V device in TO-204AA [ TO-3 ] package
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2N3055H
O-204AA
2N3055H
2N3055H+RCA
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UF28156
Abstract: UF2815B L5 mosfet
Text: = - EC an AMP company z = RF MOSFET Power Transistor, 15W, 28V 100 - 500 MHz UF28156 v2.00 Features l l l l l l N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation Common Source Configuration Lower -Noise Floor 100 MHz to 500 MHz Operation
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UF28156
270pf
82Opf
lx28158
UF28156
UF2815B
L5 mosfet
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PDF
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BC372
Abstract: ic-250mA CTO-92
Text: NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR BC372 ISSUE 2 SEPT 93 FEATURES * 100 Volt VCEO * Gain of 8k at IC=250mA * IC=1 Amp E B C TO92 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage
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BC372
250mA
250mA,
100mA,
100MHz
BC372
ic-250mA
CTO-92
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PDF
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Transistor Equivalent list
Abstract: "RF MOSFET" UF2805B b 595 transistor transistor power 5w Mosfet DF 50 duos
Text: an AMP company RF MOSFET Power 100 - 500 MHz Transistor, 5W, 28V UF2805B A B E Features l N-Channel Enhancement l DUOS Structure l Lower Capacitances Mode Device for Broadband v2.00 Operation 0 Common Source Configuration l Lower Noise Floor l 100 MHz to 500 MHz Operation
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UF2805B
68Dpf
82Opf
Transistor Equivalent list
"RF MOSFET"
UF2805B
b 595 transistor
transistor power 5w
Mosfet DF 50
duos
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PDF
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pulse transformer bv 070
Abstract: 145J UF281OOV wacom ds12a 50 Ohm transformer UF26 transformer
Text: e-5 -,-5 3 .-= = = -a= =- an AMP company * RF MOSFET Power Transistor, IOOW, 28V 100 - 500 MHz UF281 OOV v2.00 Features l N-Channel Enhancement &lode Device l DMOS Structure Lower Capacitances l High Saturated Output Power l Lower l for Broadband Operation
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UF281
uF261oov
7305OlB2-03
pulse transformer bv 070
145J
UF281OOV
wacom
ds12a
50 Ohm transformer
UF26
transformer
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PDF
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25 ohm semirigid
Abstract: capacitor 50uf UF2840G resistor 1.2k capacitor J 400
Text: -3= - -0-z =z 32 -z= .-me- an AMP company * = = RF MOSFET Power 100 - 500 MHz Transistor, 4OW, 28V UF2840G v2.00 Features l N-Channel Enhancement l DMOS Structure l Lower Capacitances Mode Device for Broadband Operation l High Saturated Output Power l
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Original
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UF2840G
1000pF
t-500pF
25 ohm semirigid
capacitor 50uf
UF2840G
resistor 1.2k
capacitor J 400
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PDF
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Untitled
Abstract: No abstract text available
Text: NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 2 -MARCH 1994 FEATURES * 100 Volt VCE0 * 1 Amp continuous current * P,„,= 1 Watt ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL ZTX452 ZTX453 UNIT v CBO 100 120 V VCEO 80 100 V Collector-Base Voltage Collector-Em itter Voltage
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OCR Scan
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ZTX452
ZTX453
001G35S
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PDF
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2N6284
Abstract: 2N6283 2N6286 2N6287 16 amp npn darlington power transistors
Text: A LAMBDA COMPLEMENTARY POWER DARLINGTONS 2N6283, 2N6284, 2N6286,2N6287 160 WATT 20 AMP CONTINUOUS, 40 AMP PEAK ‘ MAXIMUM RATINGS P A RA M ET ER SY M B O L Collector Em itter Voltage 2N6283, 2N6286 2N6284, 2N6287 Vdc 80 100 Vdc V cB O 80 100 Em itter Base Voltage
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OCR Scan
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2N6283,
2N6284,
2N6286,
2N6287
2N6286
2N6284
2N6283
2N6286
2N6287
16 amp npn darlington power transistors
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PDF
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Untitled
Abstract: No abstract text available
Text: NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR BC372 ISSUE 2 - SEPT 93_ FEATURES * * 100 Volt VCE0 Gain of 8k at lc=250mA * lc=1 Amp ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage v CBO 100 V Collector-Emitter Voltage
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OCR Scan
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BC372
250mA
001G35S
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PDF
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TIP127 equivalent
Abstract: TIP120 TIP121 TIP122 TIP125 TIP126 TIP127 TIP120 equivalent
Text: TIP120,121, TIP122 NPN POWER DARLINGTON TRANSISTORS 60-100 VOLTS 5 AMP, 65 WATTS COMPLEMENTARY TO THE TIP125, TIP126, TIP127 High power switching applications, designed for hammer drive, pulse motor drive and inductive load drive applications. Features: • High collector power dissipation:
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OCR Scan
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TIP125,
TIP126,
TIP127
TIP120
TIP122
T0-220AB
20fjs,
TIP127 equivalent
TIP121
TIP122
TIP125
TIP126
TIP127
TIP120 equivalent
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PDF
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TIP120
Abstract: TIP121 TIP122 TIP125 TIP126 TIP127 TIP127 circuit
Text: TIP125,126, TIP127 PNP POWER DARLINGTON TRANSISTORS -60 - -100 VOLTS -5 AMP, 65 WATTS COMPLEMENTARY TO THE TIP120, TIP121, TIP122 High power switching applications, designed for hammer drive, pulse motor drive and inductive load drive applications. Features:
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OCR Scan
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TIP120,
TIP121,
TIP122
TIP125
TIP127
T0-220AB
TIP120
TIP121
TIP122
TIP126
TIP127
TIP127 circuit
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PDF
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pmd10K80
Abstract: 10 amp npn darlington power transistors PMD10K 5 amp npn darlington power transistors PMD10K100 PMD11K100 PMD11K80 10 amp npn darlington power transistors with low saturation voltage PMD-10K
Text: A LAMBDA COMPLEMENTARY POWER DARL1NGTONS PM D 10K , 11K SERIES 150 WATT 12 AMP CONTINUOUS, 20 AMP PEAK ABSOLUTE MAXIMUM RATINGS PARAMETER FEATURES • Electrical specifications guaranteed for operating junction temperature range of 0 - 200°C • Guaranteed and 100% tested for lSB
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OCR Scan
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PMD10K,
pmd10K80
10 amp npn darlington power transistors
PMD10K
5 amp npn darlington power transistors
PMD10K100
PMD11K100
PMD11K80
10 amp npn darlington power transistors with low saturation voltage
PMD-10K
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PDF
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transistor TT 3043
Abstract: tt 3043 al 336 D67FP5 IC TT 3043 d67fp6 aj204 D67FP D67FP7 638ak
Text: HIGH SPEED NPN POWER DARLINGTON TRANSISTORS D67FP5,6,7 500-700 VOLTS 100 AMP, 312.5 WATTS The D67FP is a high voltage NPN high current power darlington especially designed for use in PWM applications where fast and efficient switching is required. This device
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OCR Scan
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D67FP5
D67FP
D67FP6
D67FP7
transistor TT 3043
tt 3043
al 336
IC TT 3043
d67fp6
aj204
638ak
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PDF
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