95J DIODE TOSHIBA
Abstract: DIODE 95J S5295B S5295G S5295J S5295
Text: S5295B,S5295G,S5295J TOSHIBA Fast Recovery Diode Silicon Diffused Type S5295B, S5295G, S5295J High Speed Rectifier Applications fast recovery • Average Forward Current: IF (AV) = 0.5 A (Ta = 50°C) • Repetitive Peak Reverse Voltage: VRRM = 100, 400, 600 V
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S5295B
S5295G
S5295J
S5295B,
S5295G,
S5295B
S5295G
95J DIODE TOSHIBA
DIODE 95J
S5295J
S5295
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Untitled
Abstract: No abstract text available
Text: S5295B,S5295G,S5295J TOSHIBA Fast Recovery Diode Silicon Diffused Type S5295B, S5295G, S5295J High Speed Rectifier Applications fast recovery • Average Forward Current: IF (AV) = 0.5 A (Ta = 50°C) · Repetitive Peak Reverse Voltage: VRRM = 100, 400, 600 V
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S5295B
S5295G
S5295J
S5295B,
S5295G,
S5295B
S5295G
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PDF
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Untitled
Abstract: No abstract text available
Text: S5295B,S5295G,S5295J TOSHIBA Fast Recovery Diode Silicon Diffused Type S5295B,S5295G,S5295J High Speed Rectifier Applications fast recovery • Average Forward Current: IF (AV) = 0.5 A (Ta = 50°C) • Repetitive Peak Reverse Voltage: VRRM = 100, 400, 600 V
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S5295B
S5295G
S5295J
S5295J
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S5295G
Abstract: No abstract text available
Text: S5295B,S5295G,S5295J TOSHIBA Fast Recovery Diode Silicon Diffused Type S5295B,S5295G,S5295J High Speed Rectifier Applications fast recovery • Average Forward Current: IF (AV) = 0.5 A (Ta = 50°C) • Repetitive Peak Reverse Voltage: VRRM = 100, 400, 600 V
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S5295B
S5295G
S5295J
S5295J
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S5295G
Abstract: S5295B S5295J 95J DIODE TOSHIBA
Text: S5295B,S5295G,S5295J TOSHIBA Fast Recovery Diode Silicon Diffused Type S5295B,S5295G,S5295J High Speed Rectifier Applications fast recovery • Average Forward Current: IF (AV) = 0.5 A (Ta = 50°C) • Repetitive Peak Reverse Voltage: VRRM = 100, 400, 600 V
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S5295B
S5295G
S5295J
S5295B
S5295G
S5295J
95J DIODE TOSHIBA
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PDF
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Untitled
Abstract: No abstract text available
Text: S5295B,S5295G,S5295J TOSHIBA Fast Recovery Diode Silicon Diffused Type S5295B,S5295G,S5295J High Speed Rectifier Applications fast recovery • Average Forward Current: IF (AV) = 0.5 A (Ta = 50°C) • Repetitive Peak Reverse Voltage: VRRM = 100, 400, 600 V
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S5295B
S5295G
S5295J
S5295J
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PDF
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DI108S
Abstract: SK5100 CP2506 sb5200 SB840
Text: Diode & Rectifiers Diode & Rectifiers MERITEK RoHS TABLE OF CONTENT • PLASTIC PASSIVATED JUNCTION RECTIFIER o General Purpose
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38x45Â
DI108S
SK5100
CP2506
sb5200
SB840
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diodes STmicroelectronics marking T01
Abstract: STTA106 STTA106U STTA106RL stta106s
Text: STTA106/U TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF AV 1A VRRM 600V trr (typ) 20ns VF (max) 1.5V FEATURES AND BENEFITS • ■ ■ ■ SPECIFIC TO FREEWHEEL MODE OPERATIONS : FREEWHEEL OR BOOSTER DIODE ULTRA-FAST AND SOFT RECOVERY
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STTA106/U
STTA106U
DO-15
STTA106
diodes STmicroelectronics marking T01
STTA106
STTA106U
STTA106RL
stta106s
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PDF
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Untitled
Abstract: No abstract text available
Text: DIODE SOLUTIONS since 1997 PORTFOLIO SMC Diodes www.smc-diodes.com 002-0415 ABOUT SMC: SMC QUALITY STANDARDS: • Founded in 1997 • ISO 9001:2008 certified • Own design and wafer fabrication • ISO 14001:2004 certified • Strong in engineering & manufacturing
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TS16949
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PDF
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STTA106
Abstract: STTA106U diodes STmicroelectronics marking T01 STTA106RL smb le C2631 marking ED smb
Text: STTA106/U TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF AV 1A VRRM 600V trr (typ) 20ns VF (max) 1.5V FEATURES AND BENEFITS • ■ ■ ■ c u d SPECIFIC TO FREEWHEEL MODE OPERATIONS : FREEWHEEL OR BOOSTER DIODE ULTRA-FAST AND SOFT RECOVERY
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STTA106/U
STTA106
STTA106U
diodes STmicroelectronics marking T01
STTA106RL
smb le
C2631
marking ED smb
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PDF
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STTH2004S
Abstract: stth20p03 stth30p03s stth1004s stth20p035 STTH1004 stth2004 stth20p035sfp STTH30P03SW STTH
Text: Rectifiers and ASD for power conversion applications www.st.com/rectifiers Contents Meeting today’s industrial power-conversion requirements 3 1.0 Computers 3 1.1 Desktop PCs 3 1.2 File servers 4 2.0 Computers and consumer goods 5 2.1 Notebooks, game stations, audio players, and similar applications
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DO-41,
DO-15,
DO-201
O-220AC
O-220I
O-220AB
O-220FPAB
O-247
DO-247
BRECT0408
STTH2004S
stth20p03
stth30p03s
stth1004s
stth20p035
STTH1004
stth2004
stth20p035sfp
STTH30P03SW
STTH
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BXW04-13
Abstract: BZW04 BZW04-13 pulse load calculation formula transient voltage suppressor voltage suppressor
Text: Transient Voltage Suppressor Diodes 1. INTRODUCTION They are P-N junctions made from silicon, formed through a diffusion process, with zener breakdown, avalanche , and specifically conceived to limit over voltages and dissipate high transient power with very short response times (1 pico sec) (10–12).
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DO-15
DO-201
BXW04-13
BZW04
BZW04-13
pulse load calculation formula
transient voltage suppressor
voltage suppressor
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PDF
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COLOR tv tube charger circuit diagrams
Abstract: MBRF 1015 CT smd diode S4 67A DO-213AB smd diode color marking code vacuum tube applications data book V40100PG diode 719 b340a EQUIVALENT 31gf6 SB050 D 168 s104 diode 87a
Text: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book rectifiers vishay general semiconductor vse-db0001-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vse-db0001-1102
I8262
COLOR tv tube charger circuit diagrams
MBRF 1015 CT
smd diode S4 67A
DO-213AB smd diode color marking code
vacuum tube applications data book
V40100PG
diode 719 b340a
EQUIVALENT 31gf6
SB050 D 168
s104 diode 87a
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PDF
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3 watt 70v zener diode
Abstract: inkjet print head interface K784P
Text: Inkjet Printer Table of Contents ACCESS SENSORS, Door Sensor. 3 CONTROL BOARD, DSP
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00V-600V;
DO-220AA
V-540V;
V-440V
DO-204AL
DO-41)
DO-204AC
DO-15)
3 watt 70v zener diode
inkjet print head interface
K784P
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br 123 s
Abstract: BAS54A BR3005 MS15N50 sod-23 BAS54C
Text: Bruckewell Technology Corp., Ltd. Your Best Partner Discrete Semiconductor Product Catalogue 2015 version Diode/ Rectifier MOSFET TVS/ ESD Protector Comp pany Profile P e Bru uckewell teechnology corp. c registe ered in Dela aware, USA A and total capital
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O-252
O-277A
O-277B
MA/DO-214AC
DO-214A
MC/DO-214AB
br 123 s
BAS54A
BR3005
MS15N50
sod-23
BAS54C
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NTE135A
Abstract: NTE116 cross reference transistor power NTE2396 2 Amp rectifier diode NTE5127A nte159
Text: REPLACEMENT SEMICONDUCTOR KITS NTEKCOM SERIES REPLACEMENT SEMICONDUCTOR KITS Each kit is housed in a 30–drawer cabinet and comes with an NTE Semiconductor Technical Guide and Cross Reference. All devices provided in these kits are also available separately.
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NTE109
NTE116
NTE123AP
NTE125
NTE128P
NTE2396
NTE2397
NTE2398
NTE5127A
NTE5304
NTE135A
NTE116 cross reference
transistor power
NTE2396
2 Amp rectifier diode
NTE5127A
nte159
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1M5378B
Abstract: No abstract text available
Text: SEtllTRON INDUSTRIES LTD 43E » • 613760^ 0000161 1 « S L C B IN5333-IN5388 series High Power Zener Diode Voltage Range 3V3 to 200 Volts 5.0 Watt Steady State FEATURES ■ High power regulator diode ■ High surge capabilities ■ 100% Tested ■ -65°C to +200°C
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OCR Scan
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IN5333-IN5388
DO-35
DO-41
DO-15
DO-201AD
1M5378B
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PDF
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CV8805
Abstract: BY206 diode CV8308 SOD-18 BYX94 BY227 diode BY207 Diode 1N4007 DO-7 Rectifier Diode BYX10 diode BY227
Text: Diodes silicon picoampere diode book 1 part 3 and 4 BAV45 Description I frm m A < i Type No. E xtrem ely lo w leakage and lo w capacitance diode. O utline T O —18. Dwg. ref. A T 5 35 I r at V r 5 (pA ) 100 I r at V r 20 (pA ) max. lF (m A) (V ) Vf at I f
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OCR Scan
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BAV45
BY206
DO-14
BY207
h--22->
crt6-25
CV8805
BY206 diode
CV8308
SOD-18
BYX94
BY227 diode
Diode 1N4007 DO-7 Rectifier Diode
BYX10
diode BY227
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PDF
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95J DIODE TOSHIBA
Abstract: DIODE 95J S5295J S5295B s5295g DO-15 JEDEC
Text: S5295B/G/J O SILICON DIFFUSED TYPE FAST RECOVERY DIODE Unit in mm HIGH SPEED RECTIFIER APPLICATIONS. FAST RECOVERY • Average Forward Current : IF(AV) =0.5A • Repetitive Peak Reverse Voltage : V m m = 100—600V • Reverse Recovery Time : 1.5^s MAXIMUM RATING
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OCR Scan
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S5295B/G/J
00--600V
S5295B
S5295G
S5295J
S5295J
DO-15
SC-39
95J DIODE TOSHIBA
DIODE 95J
DO-15 JEDEC
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6A4 DIODE
Abstract: AX-52 diode diode 6a4 diode 6a6 diode rL257 A106 6A1 diode 6A6 DIODE diode 6A2 1N4002
Text: DIODE RECTIFIERS • 1.0A THRU 6.0A • 50V THRU 1000V CURRENT A 1.0 1.5 3.0 3.0 6.0 @ TEMP "C 25 25 25 25 25 SURGE (A) 50 50 200 150 400 50V 1N4001 J-05 RL251 1N5400 6A-05 100 V 1N4002 0-1 RL252 1N5401 6A-1 200V 1N4003 J-2 RL253 1N5402 6A-2 400V 1N4004
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OCR Scan
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1N4001
1N4002
1N4003
1N4004
1N4005
1N4006
1N4007
DO-41
DO-15
RL251
6A4 DIODE
AX-52 diode
diode 6a4
diode 6a6
diode rL257
A106
6A1 diode
6A6 DIODE
diode 6A2
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PDF
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d137 smd diode
Abstract: rg3j 005 BYW36 v gp20 diode zener diode cross reference SRP300K rectifier diode GP20 SMD zener diode 203 DIODE RG4A EFR135
Text: GENL INSTR/ POWER SSE D • 3fll'D137 0003351 7 ■ FAST RECOVERY SILICON RECTIFIERS continued 2.0 1.5 IMA] D0204AP DO15 PKG TYPE ( (Ì D0204AP GP20 % (k \i r 00201AP D0204AP <^ VRRM (volts) l 50 , RGP15A RGP20A RG2A 100 RGP15B RGP20B RG2B BY296P 200 RGP15D
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OCR Scan
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D0204AP
00201AP
D0204AP
RGP15J
RGP15K
RGP15M
BYV95C
BYV96D
BYV96E
d137 smd diode
rg3j 005
BYW36 v
gp20 diode
zener diode cross reference
SRP300K
rectifier diode GP20
SMD zener diode 203
DIODE RG4A
EFR135
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Untitled
Abstract: No abstract text available
Text: 43E T> SEMITRON INDUSTRIES LTD 013760*1 D000177 7 BISLCB IN4890-4895A series Temperature Compensated Diode 6V35 Volts Ultra Stable APPLICATIONS GLASS D07 • This series of Semitron 400 mW Ultra-Stable Reference Diodes offers a CERTIFIED REFERENCE VOLTAGE STABILITY as measured
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D000177
IN4890-4895A
PPM/1000
DO-35
DO-41
DO-15
DO-201AD
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PDF
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pin diode do35
Abstract: 1N3502 1n3504 diode zener PG 200
Text: SEMITRON I N D U S T R I E S LTD 43E D • 013700*? 00GG175 3 B S L C B - t - u -0 7 IN3501-3504 S E R I E S Temperature Compensated Diode 6V35 Ultra Stable APPLICATIONS GLASS D07 ■ This series of Semitron 250 mW Ultra-Stable Reference Diodes offers a CERTIFIED REFERENCE VOLTAGE STABILITY
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OCR Scan
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00GG175
IN3501-3504
PPM/1000
DO-35
DO-35
DO-41
DO-15
DO-201AD
pin diode do35
1N3502
1n3504
diode zener PG 200
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PDF
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FAG 32 diode
Abstract: pj 82 diode M/diode fag 45 diode FAG 50 FAG 50 diode
Text: FAGOR ^ T ransient Voltage Suppressor Diodes 1. INTRODUCTION They are P-N junctions m ade from silicon, formed through a diffusion process, with zener breakdown, avalanche , and specifically conceived to limit over voltages and dissipate high transient pow er with very short response times (1 pico sec) (1CH).
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OCR Scan
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DO-15
D0-201
FAG 32 diode
pj 82 diode
M/diode fag 45
diode FAG 50
FAG 50 diode
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PDF
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