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    1000 VOLT PNP TRANSISTOR Search Results

    1000 VOLT PNP TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    1000 VOLT PNP TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TRANSISTOR MOTOROLA MAC 223

    Abstract: MRF9282 MRF1510 triac MAC 97 AB MSB81T1 solid state 220 volt stabilizer circuit MHW8272 MRF9242 10 amp igbt 1000 volt 100 amp 1200 volt Triac
    Text: NEW PRODUCT CALENDAR and KEY FOCUS PRODUCTS 3Q96 CALCPSTG/D REV 8 This quarterly folder includes information on products by the Communications, Power and Signal Technologies Group CPSTG , which comprises four organizations. These organizations are the RF Semiconductor Division, specializing in low power and high power discrete transistors, hybrid circuits for power amplifiers (modules),


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    EN12453

    Abstract: EN12978 EN12445 circuit Diagram of TV receiver PB18CNT15 PB18CNT15NC PB18CNT15NO PB18CNT15PC PB18CNT15PO Optical proximity sensor through beam
    Text: Photoelectrics Through-beam, Transistor Output Type PB18CNT15. • • • • • • • • • Product Description The PB18CNT. is a through beam sensor set specific designed for safety edge sensing in industrial automatic doors. The housing is designed to


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    PDF PB18CNT15. PB18CNT. EN12453 EN12978 EN12445 circuit Diagram of TV receiver PB18CNT15 PB18CNT15NC PB18CNT15NO PB18CNT15PC PB18CNT15PO Optical proximity sensor through beam

    PB10CNT15NO

    Abstract: circuit Diagram of TV receiver EN12445 EN12453 PB10CNT15 PB10CNT15NC PB10CNT15PC PB10CNT15PO infrared led receiver 3 mm ir receiver
    Text: Photoelectrics Through-beam, Transistor Output Type PB10CNT15. • • • • • • • • • • Product Description The PB10CNT. is a through beam sensor set specially designed for Elevators, Escalators, Entrance control to meet the requirements in


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    PDF PB10CNT15. PB10CNT. PB10CNT15NO circuit Diagram of TV receiver EN12445 EN12453 PB10CNT15 PB10CNT15NC PB10CNT15PC PB10CNT15PO infrared led receiver 3 mm ir receiver

    PE12CNT15PO

    Abstract: circuit Diagram of TV receiver PE12CNT15NO PE12CNT15 PE12CNT15PC EN12978 mechanical proximity sensor PE12CNT15NC pc power supply diagram ir receiver transistor
    Text: Photoelectrics Through-beam, Transistor Output Type PE12CNT15. • • • • • • • • • • Product Description The PE12CNT. is a family of general purpose Photoelectric sensors. They are specially designed for Elevators, Escalators, Entrance control to meet the


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    PDF PE12CNT15. PE12CNT. PE12CNT15PO circuit Diagram of TV receiver PE12CNT15NO PE12CNT15 PE12CNT15PC EN12978 mechanical proximity sensor PE12CNT15NC pc power supply diagram ir receiver transistor

    Untitled

    Abstract: No abstract text available
    Text: STS9015 Semiconductor PNP Silicon Transistor Description • General purpose applicat ion. • Swit ching applicat ion. Features • Excellent h FE linear it y : h FE I C= 0.1m A / h FE( I C= 2m A) = 0.95( Typ.) • Low noise : NF = 10dB( Max.) • Com plem ent ary pair w it h STS9014


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    PDF STS9015 STS9014 KST-9018-000

    TRANSISTOR C 3205

    Abstract: 3205 transistor TRANSISTOR BR C 3205 transistor TD-100 ZTX576 DSA003769 3205 ic
    Text: PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ZTX576 TYPICAL CHARACTERISTICS IB1=IB2=IC/10 -0.8 tr ts nS µS 500 5 Switching time VCE sat - (Volts) IC/IB=10 -0.6 -0.4 -0.2 400 4 300 3 200 2 -0.0001 -0.001 -0.01 -0.1 tf nS 1000 ts C B 800 600 tf


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    PDF ZTX576 IC/10 -100mA, -10mA, -300mA, -50mA, 100MHz TRANSISTOR C 3205 3205 transistor TRANSISTOR BR C 3205 transistor TD-100 ZTX576 DSA003769 3205 ic

    PC50CND20BAM1

    Abstract: PC50CND PC50CND20BA "pnp switch" BU500
    Text: Photoelectrics Diffuse-reflective, Transistor Output Type PC50CND20BA • • • • • • • • • • Product Description Range: 2 m Adjustable sensitivity Modulated, infrared light Supply voltage: 10 to 30 VDC Output: 200 mA, NPN or PNP selectable


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    PDF PC50CND20BA PC50CND20BAM1 APC50-1 PC50CND20BAM1 PC50CND PC50CND20BA "pnp switch" BU500

    MBT2907ADW

    Abstract: SOT363-6
    Text: MBT2907ADW Dual General Purpose Transistor PNP+PNP Silicon 1 2 3 6 5 1 4 2 4 3 6 5 SOT-363 SC-88 PNP+PNP Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Value


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    PDF MBT2907ADW OT-363 SC-88) MBT2907ADW OT-363 SOT363-6

    MBT2907ADW

    Abstract: No abstract text available
    Text: MBT2907ADW Dual General Purpose Transistor PNP+PNP Silicon 1 2 3 6 5 * “G” Lead Pb -Free 1 4 2 4 3 6 5 SOT-363(SC-88) PNP+PNP Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol


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    PDF MBT2907ADW OT-363 SC-88) MBT2907ADW OT-363

    ZTX510

    Abstract: DSA003768
    Text: PNP SILICON PLANAR HIGH SPEED SWITCHING TRANSISTOR ZTX510 TYPICAL CHARACTERISTICS 1000 VCB=-5V f=100MHz 600 IC - mA fT - (MHz) 800 400 IB=-5.0mA IB=-4.5mA IB=-4.0mA -200 IB=-3.5mA IB=-3.0mA IB=-2.5mA -150 IB=-2.0mA -10 -20 -30 -40 -100 -5 PARAMETER SYMBOL


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    PDF ZTX510 100MHz 400MHz -10mA, -30mA, -100mA, -10mA* ZTX510 DSA003768

    PC50CND10BAM1

    Abstract: PC50CND10BA glass break sensor diagram PC50CND
    Text: Photoelectrics Diffuse-reflective, Transistor Output Type PC50CND10BA • Range: 1 m • Adjustable sensitivity • Modulated, infrared light • Supply voltage: 10 to 30 VDC • Output: 200 mA, NPN or PNP • Make and break switching function selectable • LED for output indication, signal stability and power ON


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    PDF PC50CND10BA PC50CND10BAM1 APC50-1 PC50CND10BAM1 PC50CND10BA glass break sensor diagram PC50CND

    PC50CNR10BAM1

    Abstract: r23 transistor "pnp switch" PC50CNR10BA PC50CNR
    Text: Photoelectrics Retro-reflective, Transistor Output Type PC50CNR10BA • Range: 10 m • Adjustable sensitivity • Modulated, infrared light • Supply voltage: 10 to 30 VDC • Output: 200 mA, NPN or PNP selectable • Make and break switching function • LED for output indication, signal stability and power ON


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    PDF PC50CNR10BA PC50CNR10BAM1 PC50CNR. APC50-1 PC50CNR10BAM1 r23 transistor "pnp switch" PC50CNR10BA PC50CNR

    SMD Code 12W SOT23

    Abstract: 12W SMD MARKING CODE smd 2n2907a 2n2222a SOT223 2N2222A smd 6E SMD CODE MPSA42 SMD SMD MARKING CODE 12w smd npn darlington SMD CODE SOT89 lc
    Text: SMD Transistors SOT-89 Case 1.2W TYPE NO. CBCX68 CBCX69 CXT2222A CXT2907A CXT3019 CXT3904 CXT3906 CXT4033 CXT5401 CXT5551 CXTA14 CXTA42 CXTA64 CXTA92 DESCRIPTION NPN HIGH CURRENT PNP HIGH CURRENT NPN AMPL'SWITCH PNP AMPt/SWITCH NPN HIGH CURRENT NPN AM PL/SWITCH


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    PDF OT-89 CBCX68 CBCX69 CXT2222A CXT2907A CXT3019 CXT3904 CXT3906 CXT4033 CXT5401 SMD Code 12W SOT23 12W SMD MARKING CODE smd 2n2907a 2n2222a SOT223 2N2222A smd 6E SMD CODE MPSA42 SMD SMD MARKING CODE 12w smd npn darlington SMD CODE SOT89 lc

    SMD Code 12W SOT-23

    Abstract: CXT5401 BK SMD MARKING CODE 4E C2TA44 SMD MARKING CODE FE sot89 marking code C3E SOT-89 npn smd bc550 smd SMD Code 12W SOT23 marking BH SOT-223 marking da sot89
    Text: SMD Transistors SOT-23 Case U.S. Specification Preferred Series 350mW IM MW MM 30 15 30 e k « >Vcf (VOLTS) m *lFI (VOLTS) MAX 10 15 20 _ 1.0 3.0 NF Vet (SAD< »•c (VOLTS) (mA) MAX C« (pF) MAX (MHz) MM m MAX 0.4 1.7 600 6.0 10 MARKING SttVLAR CODE LEADED


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    PDF OT-23 350mW CMPT2222A CMPT2369 CMPT24 CMPT2907A CMPT3640 CMPT3646 CMFT3904 CMPT3906 SMD Code 12W SOT-23 CXT5401 BK SMD MARKING CODE 4E C2TA44 SMD MARKING CODE FE sot89 marking code C3E SOT-89 npn smd bc550 smd SMD Code 12W SOT23 marking BH SOT-223 marking da sot89

    bc 207 npn

    Abstract: BC209 bc audio transistors bc 209 BC116A BC low noise BC377 audio pnp
    Text: CONSUMER TRANSISTORS CD U > X CO E_ c E LÜ u_ .c < _E _u @ > J < E ra _u LÜ O > o 1< oc e >< CD E ÜJ u. o LT> CNJ X CB E _o II IO h@ 5 _E Ü Q- 45 80/240 150 400 150 0.1-150 _ 500 50 60 typ 150 200 150 1-500 - 500 General purpose c j < J PACKAGE ì> > lc RANGE mA


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    PDF BC116A O-39epoxy bc 207 npn BC209 bc audio transistors bc 209 BC low noise BC377 audio pnp

    marking code H.5 Sot 23-5

    Abstract: Volt regulator 723 10 Pin IC 723 voltage regulator 723 voltage regulator ic TC47BR ntc-47 TC-47 TL 4946 ntc47
    Text: t v . • i1',!ï î .1l II^I[I:î ¡ e i w O A ln i“ ' ¡1 à f;] m Semiconductor, Inc. TC47 Series VOLTAGE REGULATOR CONTROLLER FEATURES GENERAL DESCRIPTION ■ ■ The TC47 Series are CMOS voltage regulator controller ICs for use with an external power transistor. They feature


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    PDF TC4730A) 100mA: OT-23-5 100mA marking code H.5 Sot 23-5 Volt regulator 723 10 Pin IC 723 voltage regulator 723 voltage regulator ic TC47BR ntc-47 TC-47 TL 4946 ntc47

    SPI-204

    Abstract: P-Channel JFETs "P-Channel JFETs" DD11001
    Text: SIPEX CORP S SE D • fl S ö 3 7 1 1 0Q055Efci 4 T-42-21 S P I204 SIGNAL PROCESSING EXCELLENCE HIGH I/O AN A LO G ARRAY WITH JFETS DESCRIPTION The SPI204 Is a high density, high performance analog array containing 428 lin ear bipolar transistors and 16 P-channel JFET transistors as well


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    PDF 0Q055Efci T-42-21 SPI204 SPI000 SP1204 MXRB01 MXRB02 MXRB03 SPI-204 P-Channel JFETs "P-Channel JFETs" DD11001

    tq-60

    Abstract: No abstract text available
    Text: xemitron semiconductors SemitronicsCorp. m discrete devices 4 0 ^ 5 4 1 , DDDQSTl 7 I r - 3 1 'ô l s ilic o n tr a n s is to rs I N T E X / SEMITRONICS CORP 27E D yH F/VH F power transistors Pwar Out e e P|E MHz (W) e v CE 65 65 65 65 40 40 40 40 4.0 4.0


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    PDF 2N3563 W3632 2N37S3 2N9552N955A 2N963 2N964A -2N96S' I2N374 2N994 2N2482; tq-60

    Untitled

    Abstract: No abstract text available
    Text: C lr > A v C o ik A ^ A D n n . SPI 204 C o rp o ra tio n * SIGNAL PROCESSING EXCELLENCE HIGH I/O ANALOG ARRAY WITH JFETS DESCRIPTION The SPI 204 is a high density, high performance an alo g array containing 428 linear bipolar transistors and 16 P-channel JFET transistors as well


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    PDF SPI000 SPI204 MXOP02 MXOP03 MXCM01

    T0-92B

    Abstract: transistors equivalent 2N3702 2N3404 2N5450 MPS3704 equivalent 2N5355 2n EQUIVALENT MPS3702 2N5221 equivalent
    Text: 2N3702 MPS 3702 2 N 3706 MPS 3706 rough through PNP . KPN SILICON GENERAL PURPOSE AF TRANSISTORS • i . VT. r 4 - - T f " 7 • ! ‘ T- • • ^-y-XV" -ai. ^ V — r ^ - T K ; •‘ ’V ’ '' M . A I J" CASE T0-92B THE ABOVE TYPES ARE SILICON PLANAR EPITAXIAL


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    PDF t0-92b t0-92a 2N3702 T0-92B. MPS5J02 T0-92A. 2n/mps3702 2n/mps3705 2n/mps3706 2N/MP53702 transistors equivalent 2N3404 2N5450 MPS3704 equivalent 2N5355 2n EQUIVALENT MPS3702 2N5221 equivalent

    marking code ff SMD Transistor

    Abstract: SMD MARKING CODE C2U SMD MARKING CODE C1G C2U SOT-89 transistor smd 2N4403 c1g smd 2N3904 TRANSISTOR SMD SOT23 transistor 2N2222A RF transistor marking IN SOT-89 2N3640
    Text: CENTRAL SE MI C ON D UC T O R ÜË dI~ § M a n ta 00G0430 3 f r-z 7 -2 ? ~ @§nijg§£3S Cestirai liüiie@ndugf@? gsrp. ♦I Central semiconductor Corp. Ï S tfii s@rusüG mö©g @? @@pp. SURFACE MOUNTED DEVICES TRANS I St OÄ: SOT- 23, SOT-89 145 Adams Avenue


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    PDF DDQD43D OT-23, OT-89 OT-23 CMPT918 2N918 CMPT2222A CXT390A CXT3904 2N3904 marking code ff SMD Transistor SMD MARKING CODE C2U SMD MARKING CODE C1G C2U SOT-89 transistor smd 2N4403 c1g smd 2N3904 TRANSISTOR SMD SOT23 transistor 2N2222A RF transistor marking IN SOT-89 2N3640

    MPS6560

    Abstract: MPS6563 MPS6562 MPS6565 TA425 MPS 6561 MPS-6565
    Text: MPS 6561 • MPS 6563 COMPLEMENTARY SILICON AP MEDIUM POWER TRANSISTORS CASE T0-92A THE MPS656O, MPS656I NFN AND MPS6562, MPS6563 (PNP) ARE SILICON PLANAR EPITAXIAL TRANSISTORS DESIGNED FOR COMPLEMENTARY SYMMETRY AUDIO OUTPUT APPLICATIONS. THEY FEATURE LOW COLLECTOR TO


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    PDF mps656o, mps656i mps6562, mps6563 500mA) TA425Â T0-92A MPS6560 MPS656l MPS6562 MPS6563 MPS6565 TA425 MPS 6561 MPS-6565

    TO1C

    Abstract: 2N2188 IN404 2N2482 IN392 2N4040/A 2N994 INTEX 2NB642 2N3866
    Text: discrete devices SEMICONDUCTORS j e m it r o n • Semitronics Corp. silicon transistors T '31'û l 4äbTS4b 00002^1 7 I INTEX/ SE MITRONICS CORP 27E D UHF/VHF power transistors 7 ~ - 3 7 - o / NPN type -7H ÌÌK 65 « V CE 5.ÍÍÍ3553 6b :'*K3 6« 65 ZN3T33 65


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    PDF 2K337S 2K3632 2N3733 T0-60 TQ-60 2N3866 N3924 2N392B -2N3927 2N401Ã TO1C 2N2188 IN404 2N2482 IN392 2N4040/A 2N994 INTEX 2NB642

    rca transistor manual

    Abstract: rca case outlines diode 1N539 2N301 2N140 transistor bf 175 rca thyristor manual drift-field 2N1637 transistor rca 2n173
    Text: RCA Transistor Manual T h is book has been prepared to assist those who work or experiment with semi­ conductor devices and circuits. It will be useful to engineers, service technicians, edu­ cators, students, radio amateurs, hobbyists, and others technically interested in transis­


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