1N5622
Abstract: No abstract text available
Text: 1N5622 1000 V 1 A miniature glass passivated junction medium-switching rectifier 1.99 . Page 1 of 1 Enter Your Part # Home Part Number: 1N5622 Online Store 1N5622 Diodes 1000 V 1 A miniature glass passivated junction medium- Transistors switching rectifier
|
Original
|
1N5622
1N5622
com/1n5622
|
PDF
|
P1000
Abstract: No abstract text available
Text: P 1000 A.P 1000 S & Axial lead diode Standard silicon rectifier diodes P 1000 A.P 1000 S ; ? 5 ? ? 0 30 5 ? ? 0 ? ? ) 1 7 1 D 1 4 1 E 1 : 1 = 1 #; # , 1 "
|
Original
|
|
PDF
|
F5NK100Z
Abstract: STP5NK100Z P5NK100Z STF5NK100Z STW5NK100Z W15NK100Z
Text: STP5NK100Z - STF5NK100Z STW5NK100Z N-CHANNEL 1000V - 2.7Ω - 3.5A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESH MOSFET Figure 1: Package Table 1: General Features TYPE VDSS RDS on ID Pw STF5NK100Z STP5NK100Z STW5NK100Z 1000 V 1000 V 1000 V < 3.7 Ω
|
Original
|
STP5NK100Z
STF5NK100Z
STW5NK100Z
O-220/TO-220FP/TO-247
STP5NK100Z
O-220
O-220FP
F5NK100Z
P5NK100Z
STF5NK100Z
STW5NK100Z
W15NK100Z
|
PDF
|
p5nk100
Abstract: p5nk100z F5NK100Z JESD97 STF5NK100Z STP5NK100Z STW5NK100Z W15NK100Z
Text: STP5NK100Z - STF5NK100Z STW5NK100Z N-CHANNEL 1000V - 2.7Ω - 3.5A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESH MOSFET Table 1: General Features Figure 1: Package TYPE VDSS RDS on ID Pw STF5NK100Z STP5NK100Z STW5NK100Z 1000 V 1000 V 1000 V < 3.7 Ω
|
Original
|
STP5NK100Z
STF5NK100Z
STW5NK100Z
O-220/TO-220FP/TO-247
STP5NK100Z
O-220
O-220FP
p5nk100
p5nk100z
F5NK100Z
JESD97
STF5NK100Z
STW5NK100Z
W15NK100Z
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 1N5554 1000 V rectifier 5.0 A forward current 2000 ns recovery time 21.23 Diodes High. Page 1 of 1 Enter Your Part # Home Part Number: 1N5554 Online Store 1N5554 Diodes 1000 V rectifier 5.0 A forward current 2000 ns recovery Transistors time Integrated Circuits
|
Original
|
1N5554
1N5554
com/1n5554
|
PDF
|
SDD25
Abstract: SDD25N01 SDD25N02 SDD25N03
Text: SDD25 Discrete Diodes Dimensions TO-247AD 3 2 1 SDD25N01 SDD25N02 SDD25N03 SDD25N04 SDD25N05 SDD25N06 SDD25N07 1 VRSM V 50 100 200 400 600 800 1000 Symbol IFRMS IF AV M 2 3 VRRM V 50 100 200 400 600 800 1000 Test Conditions TVJ=TVJM TC=100oC; 180o sine Dim.
|
Original
|
SDD25
O-247AD
SDD25N01
SDD25N02
SDD25N03
SDD25N04
SDD25N05
SDD25N06
SDD25N07
150oC;
SDD25
SDD25N01
SDD25N02
SDD25N03
|
PDF
|
SDD25N03
Abstract: SDD25 SDD25N01 SDD25N02
Text: SDD25 Discrete Diodes Dimensions TO-247AD 3 2 1 SDD25N01 SDD25N02 SDD25N03 SDD25N04 SDD25N05 SDD25N06 SDD25N07 1 VRSM V 50 100 200 400 600 800 1000 Symbol IFRMS IF AV M 2 3 VRRM V 50 100 200 400 600 800 1000 Test Conditions TVJ=TVJM TC=100oC; 180o sine Dim.
|
Original
|
SDD25
O-247AD
SDD25N01
SDD25N02
SDD25N03
SDD25N04
SDD25N05
SDD25N06
SDD25N07
150oC;
SDD25N03
SDD25
SDD25N01
SDD25N02
|
PDF
|
170M6462
Abstract: 170H3006 170M7031 170H3027 170M8554 170M8608 170M2666 170M7636 170M7595 170M6814
Text: High Speed Fuses Square Body Fuses General Information Introduction Square Body Contents Page Application Information 115-116 Volts IEC/UL Size 000,00 690/700 1*, 1, 2, 3 1*, 2, 3 4 23, 24 00, 1, 2, 3 00 1000 1*, 1, 2, 3 4 24 1*, 1, 2, 3 1250/1300 1000-2000
|
Original
|
157-iversal
1BS101
1BS102
1BS103
1BS104
SB00-D
170M6462
170H3006
170M7031
170H3027
170M8554
170M8608
170M2666
170M7636
170M7595
170M6814
|
PDF
|
p5nk100z
Abstract: W15NK100Z F5NK100Z p5nk100 STF5NK100Z STW5NK100Z 22 B2 zener
Text: STP5NK100Z - STF5NK100Z STW5NK100Z N-CHANNEL 1000V - 2.7Ω - 3.5A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESH MOSFET PRODUCT PREVIEW Figure 1: Package Table 1: General Features TYPE VDSS RDS on ID Pw STF5NK100Z STP5NK100Z STW5NK100Z 1000 V 1000 V
|
Original
|
STP5NK100Z
STF5NK100Z
STW5NK100Z
O-220/TO-220FP/TO-247
O-220
O-220FP
p5nk100z
W15NK100Z
F5NK100Z
p5nk100
STW5NK100Z
22 B2 zener
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2N6383 10 A N-P-N Darlington Power Transistor. 40 V. 100 W. Gain Of 1000 At 5 A. 1. Page 1 of 2 Enter Your Part # Home Part Number: 2N6383 Online Store 2N6383 Diodes 10 A N -P-N Darlington Power Transistor. 40 V. 100 W. Transistors Gain Of 1000 At 5 A. Integrated Circuits
|
Original
|
2N6383
2N6383
com/2n6383
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Attenuator 5 to 1000 MHz Technical Data UTF-015 Features Description Pin Configuration • < 1.6:1 VSWR The UTF-015 is a thin-film voltagecontrolled RF attenuator that offers a continuously-variable attenuation of up to 20 dB from 5 to 1000 MHz. Utilizing PIN diodes,
|
Original
|
UTF-015
UTF-015
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Fast Recovery Epitaxial Diodes FRED DSEI 2x61 IFAVM = 2x60 A vRRM= 1000 v trr — v RSM Type V rrm V V 1000 1000 Symbol 1 > miniBLOC, SOT-227 B 1 DSEI 2x61-10B Test Conditions Maximum Ratings (per diode) 'frm "^vj “ Tvjm Tc= 50°C; rectangular, d = 0.5
|
OCR Scan
|
OT-227
2x61-10B
1997IXYS
0003flbfl
|
PDF
|
Diode 1N4007 DO-7 Rectifier Diode
Abstract: 1N40075 BYX/400 1N4007 RECTIFIER DIODE 4007 uf 1200 BAX12 BYW52 BYW53 BYW54 BYW55
Text: Diodes Rectifier and Avalanche diodes Type BY 202 BY 203 BY 204 Maximum ratings Notes Characteristics V 4 8006 90 <300 £ 1 .0 200 £ 507) Contact protection diode 2 5 1000') 200 £100 £ 1 .2 1000 £ 3503) Fast rectifier diodes 3 5 1000') 300 £100 <1.2
|
OCR Scan
|
BAX12
F1000
1N4001
1N4002
1N4003
1N4004
1N4006
1N4007
Diode 1N4007 DO-7 Rectifier Diode
1N40075
BYX/400
1N4007 RECTIFIER DIODE
4007 uf 1200
BAX12
BYW52
BYW53
BYW54
BYW55
|
PDF
|
DO200AB
Abstract: l701
Text: International I 8 R Rectifier Diodes Standard Recovery DO-200AB B-Puk SD 700C30L 3000 700 55 1 .6 6 1000 6310 6600 0 .0 5 SD 700C36L 3600 700 55 1 .6 6 1000 6310 6 6 ÍX ) 0 .0 5 SD 700C40L 4000 700 55 1 .6 6 1000 6310 6600 0 .0 5 SD 700C45L 4500 700 55
|
OCR Scan
|
DO-200AB
700C30L
700C36L
700C40L
700C45L
1100C25L
100C30L
S2073
800C40L
800C45L
DO200AB
l701
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: B Y T 2 3 0 P IV - 1 0 0 0 B Y T 2 3 1 P IV - 1 0 0 0 FAST R ECO VER Y R ECTIFIER DIODES MAIN PRODUCT CHARACTERISTICS I f a v 2x30 A V rrm 1000 V V f (max) 1.8 V trr (max) 80 ns ESS ˌ K2 A2 K1 A1 A2 K1 K2 A1 BYT231PIV-1000 BYT230PIV-1000 FEATURES AND BENEFITS
|
OCR Scan
|
BYT231PIV-1000
BYT230PIV-1000
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SEM IK R G N 1SE D I INC f i l i t i t,71 GGQIVO? 4 | T 33 seMSKRDn Maximum Ratings Symbol Conditions VcEVsus VCEV VcBO V ebo lc I! = 1 II I ro < m < CD m ICM = lc D .C. tp = 1 ms lc If 1000 1000 1000 7 50 100 1 A.Vbe = - 2 V = • Ib Ptot Tvi Tease = 25 °C
|
OCR Scan
|
SK50D
AR100D
12are
|
PDF
|
PIV-1000
Abstract: ISOTOP BYT261 BYT261PIV-1000 BYT60P-1000
Text: B Y T 6 0 P -1 0 0 0 B Y T 2 6 1 P IV - 1 0 0 0 FAST RECOVERY RECTIFIER DIODES MAJOR PRODUCT CHARACTERISTICS If a V v rrm V f (max) trr (max) 2 x 60 A l~ * ~ l 1000 V K1 1.8 V 1 A1 BYT261 PIV-1000 70 ns FEATURES AND BENEFITS • ■ ■ . VERY LOW REVERSE RECOVERYTIME
|
OCR Scan
|
BYT60P-1000
BYT261
PIV-1000
ISOTOP
BYT261PIV-1000
|
PDF
|
GE C712
Abstract: C712 thyristor GE C712 thyristor A430 A430A A430B A437A A437B A570 A570A
Text: RECTIFIERS 183 750 TO 1500 AMPERES GE TYPE JEDEC SPECIFICATIONS_ . Max. average forward current F M A V (1 phase operation) (A) A437 A596 A430 A 54 0 A696 A570 A640 - - - - - - - 750 1000 1000 1000 1500 1500 65 126 100 - 80 80 750 -j >T c - (°C)
|
OCR Scan
|
A437A
A430A
A570A
A437B
A430B
A570B
A437C
A430C
A570C
A437D
GE C712
C712 thyristor
GE C712 thyristor
A430
A570
|
PDF
|
SF1154
Abstract: A430 A430A A430B A437A A437B A570 A570A A570B A596
Text: RECTIFIERS 183 750 TO 1500 AMPERES GE TYPE JEDEC SPECIFICATIONS_ . Max. average forward current FM A V (1 phase operation) (A) A437 A 596 A430 A 540 A 696 A 570 A 640 - - - - - - - 750 1000 1000 1000 1500 1500 65 126 100 - 80 80 750 -j >T c - (°C)
|
OCR Scan
|
A437A
A430A
A570A
A437B
A430B
A570B
A437C
A430C
A570C
A437D
SF1154
A430
A570
A570B
A596
|
PDF
|
UTD-1000
Abstract: Avantek utd-1000
Text: W h p lHEWLETT' mWLM P A C K A R D Avantek Products Analog Level Detectors 10 to 1000 MHz Technical Data UTD-1000/1001 Features Description Pin Configuration • -1 2 0 mV O utput for -1 0 dBm Pin The lJTD-1000 has an input im pedance of 50 ohms. The lITD-1001 has an input im pedance
|
OCR Scan
|
UTD-1000/1001
300-0hm
lJTD-1000
lITD-1001
UTD-1001
UTD-1000
Avantek utd-1000
|
PDF
|
A540
Abstract: A430E A430 A430A A430B A437A A437B A570 A570A A570B
Text: RECTIFIERS 183 750 TO 1500 AMPERES GE TYPE JEDEC SPECIFICATIONS_ . Max. average forward current FM A V (1 phase operation) (A) A437 A 596 A430 A 540 A 696 A 570 A 640 - - - - - - - 750 1000 1000 1000 1500 1500 65 126 100 - 80 80 750 -j >Tc - (°C)
|
OCR Scan
|
A437A
A430A
A570A
A437B
A430B
A570B
A437C
A430C
A570C
A437D
A540
A430E
A430
A570
A570B
|
PDF
|
A570B
Abstract: A430 A430A A430B A437A A437B A570 A570A A596 A640
Text: RECTIFIERS 183 750 TO 1500 AMPERES GE TYPE JEDEC SPECIFICATIONS_ . Max. average forward current FM A V (1 phase operation) (A) A437 A 596 A430 A 540 A 696 A 570 A 640 - - - - - - - 750 1000 1000 1000 1500 1500 65 126 100 - 80 80 750 -j >T c - (°C)
|
OCR Scan
|
A437A
A430A
A570A
A437B
A430B
A570B
A437C
A430C
A570C
A437D
A570B
A430
A570
A596
A640
|
PDF
|
1450
Abstract: 70HF120
Text: International IGR Rectifier Part Number Diodes VRRM M I fav @ t C W Q ' f(*V W 50 Hi W 60Hz K o c h e l W (°C/W) Notes Demand Number Outline Key Standard Recovery 70HF120 1200 70 140 1 35 1000 1050 0.45 9 12 20202 70HF140 Ì 400 70 no 1 35 1000 1050 0.45
|
OCR Scan
|
70HF120
70HF140
88HF10
85HF20
88HF20
85HF40
88HF40
85HF60
88HF60
85HF80
1450
|
PDF
|
Untitled
Abstract: No abstract text available
Text: International I 8 R Rectifier Fast Recovery Diodes Discrete DQ-205AC D0-30 S D 103N 04S 10P V 400 110 85 3000 3140 2.23 0 .1 6 1000 2 4 12 1 14 15 82062 S D I0 3 N 0 8 S 1 0 P V 800 1 10 85 3000 3 14 0 2.23 0 .1 6 1000 2 4 12 1 14 15 82062 82062 S D IO 3 N 1 0 S 1 O P V
|
OCR Scan
|
DQ-205AC
D0-30)
16S15PV
IRD3899R
40HFLR10502)
40FL10S02M)
30Apk
D0-30
|
PDF
|
