AC INRUSH CURRENT 1000A LIMITER
Abstract: KLH Series littelfuse l50s L15S L25S L50S L60S L70S LR29862 UL 248-14
Text: Next Semiconductor Fuses 150/250/500/600/700 VAC • Very Fast-Acting ■ 1 – 1000 Amperes SPECIFICATIONS Voltage Ratings: L15S: 150 V AC/DC 1 – 60A 150 VAC (70 – 1000A) 100 VDC (70 – 1000A) L25S: 250 V AC/DC (1 – 200A) 250 VAC (225 – 800A) 200 VDC (225 – 800A)
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VAC/450VDC
700VAC/650VDC
E71611
LR29862
001/LHR
AC INRUSH CURRENT 1000A LIMITER
KLH Series
littelfuse l50s
L15S
L25S
L50S
L60S
L70S
LR29862
UL 248-14
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hct mos
Abstract: HCT-1000K not hct linear date code
Text: CUSTOMER CUSTOMER CODE PART DESCRIPTION HALL EFFECT CURRENT TRANSDUCER OPEN LOOP HCT 1000A INTERNAL CODE HCT-1000K DATE 21/10/10 EDITION 1 DOCUMENT NAME HCT-1000K_1.doc HCT-1000K HALL EFFECT CURRENT TRANSDUCER OPEN LOOP HCT 1000A NOTES All rights reserved. Passing on of this document, use and communication of contents not permitted without written authorisati on.
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HCT-1000K
HCT-1000K
hct mos
not hct
linear date code
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littelfuse l50s
Abstract: l13s L15S L25S L50S L60S L70S LR29862 KlA 511 L25S125
Text: Semiconductor Fuses 150/250/500/600/700 VAC • Very Fast-Acting ■ 1 – 1000 Amperes SPECIFICATIONS Voltage Ratings: L15S: 150 V AC/DC 1 – 60A 150 VAC (70 – 1000A) 100 VDC (70 – 1000A) L25S: 250 V AC/DC (1 – 200A) 250 VAC (225 – 800A) 200 VDC (225 – 800A)
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VAC/450VDC
700VAC/650VDC
E71611
LR29862
littelfuse l50s
l13s
L15S
L25S
L50S
L60S
L70S
LR29862
KlA 511
L25S125
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L15S
Abstract: L25S L50S L60S L70S l13s L15S1000
Text: Semiconductor Fuses 150/250/500/600/700 VAC • Very Fast-Acting ■ 1 – 1000 Amperes SPECIFICATIONS Voltage Ratings: L15S: 150 V AC/DC 1 – 60A 150 VAC (70 – 1000A) 100 VDC (70 – 1000A) L25S: 250 V AC/DC (1 – 200A) 250 VAC (225 – 800A) 200 VDC (225 – 800A)
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VAC/450VDC
700VAC/650VDC
E71611)
LR29862-99)
L15S
L25S
L50S
L60S
L70S
l13s
L15S1000
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Untitled
Abstract: No abstract text available
Text: Data Sheet ACD-6 TRMS-PRO 1000A Clamp-on Multimeter Simple to operate and well-suited for most basic applications. The TRMS version improves measurement accuracy in noisy electrical environments. No hassle warranty No waiting. No shipping charges. Our commitment to
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W78mm
H40mm
MTL-90B,
ACF-3000AK
VRC-320
877-AMPROBE
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Untitled
Abstract: No abstract text available
Text: PT60QHx45 PT60QHx45 Pulse Power Thyristor Switch Preliminary Information Replaces February 2000 version, DS5267-1.3 DS5267-1.4 April 2000 APPLICATIONS ● Pulse Power ● Crowbars ● Ignitron Replacement KEY PARAMETERS 4500V VDRM IT AV 1000A ITSM 22500A
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PT60QHx45
DS5267-1
2500A
100mA,
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Untitled
Abstract: No abstract text available
Text: PT60QHx45 PT60QHx45 Pulse Power Thyristor Switch Preliminary Information Replaces February 2000 version, DS5267-1.3 DS5267-1.4 April 2000 APPLICATIONS ● Pulse Power ● Crowbars ● Ignitron Replacement KEY PARAMETERS 4500V VDRM IT AV 1000A ITSM 22500A
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PT60QHx45
DS5267-1
2500A
100mA,
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DS5268-1
Abstract: No abstract text available
Text: PT60QHx45 PT60QHx45 Medium Voltage High Current Thyristor Switch Preliminary Information Replaces February 2000 version, DS5267-1.3 DS5267-1.4 April 2000 APPLICATIONS ● Pulse Power ● Crowbars ● Ignitron Replacement KEY PARAMETERS 4500V VDRM IT AV 1000A
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PT60QHx45
DS5267-1
2500A
100mA,
DS5268-1
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DS4243-6
Abstract: DCR1002SF DCR1002SF14
Text: DCR1002SF DCR1002SF Phase Control Thyristor Advance Information Replaces July 2001 version, DS4243-5.0 DS4243-6.2 November 2002 PACKAGE OUTLINE KEY PARAMETERS VDRM 1400V IT AV 1850A ITSM 32500A dVdt* 1000V/µs dI/dt 1000A/µs *Higher dV/dt selections available
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DCR1002SF
DS4243-5
DS4243-6
2500A
DCR1002SF14
100mA.
DCR1002SF
DCR1002SF14
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Untitled
Abstract: No abstract text available
Text: DCR1002SF DCR1002SF Phase Control Thyristor Advance Information Replaces July 2001 version, DS4243-5.0 DS4243-6.2 November 2002 PACKAGE OUTLINE KEY PARAMETERS VDRM 1400V IT AV 1850A ITSM 32500A dVdt* 1000V/µs dI/dt 1000A/µs *Higher dV/dt selections available
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DCR1002SF
DS4243-5
DS4243-6
2500A
DCR1002SF14
100mA.
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65c812
Abstract: asymmetric thyristor DF451 TA449 RC snubber dc motor RC snubber thyristor design AN484 MU86
Text: TA449.W TA449.W Asymmetric Thyristor Advance Information Replaces March 1998 version, DS4681-4.1 DS4681-5.0 January 2000 KEY PARAMETERS VDRM 1400V IT RMS 400A ITSM 4000A dVdt 1000V/µs dI/dt 1000A/µs tq 10.0µs APPLICATIONS • UPS ■ Induction Heating
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TA449.
DS4681-4
DS4681-5
20kHz
TA449
65c812
asymmetric thyristor
DF451
RC snubber dc motor
RC snubber thyristor design
AN484
MU86
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Untitled
Abstract: No abstract text available
Text: DCR803SG DCR803SG Phase Control Thyristor Advance Information Supersedes July 2001 version, DS4451-5.0 DS4451-6.0 April 2003 FEATURES KEY PARAMETERS • Double Side Cooling VDRM 1800V IT AV 1045A ITSM 14000A dVdt 1000V/µs dI/dt 1000A/µs ■ High Surge Capability
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DCR803SG
DS4451-5
DS4451-6
4000A
DCR803SG18
DCR803SG17
DCR803SG16
DCR803SG15
DCR803SG14
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DG408BP45
Abstract: No abstract text available
Text: DG408BP45 DG408BP45 Gate Turn-off Thyristor Replaces March 1998 version, DS4091-2.3 DS4091-3.0 January 2000 APPLICATIONS KEY PARAMETERS 1000A ITCM VDRM 4500V IT AV 320A dVD/dt 1000V/µs diT/dt 300A/µs • Variable speed A.C. motor drive inverters (VSD-AC)
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DG408BP45
DS4091-2
DS4091-3
DG408BP45
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N mosfet 250v 600A
Abstract: No abstract text available
Text: Ihr Spezialist für Mess- und Prüfgeräte Programmable DC Electronic Load MODEL 63200 SERIES Key Features • Power Rating : 2600W, 5200W, 6500W, 10000W, 10400W, 14500W, 15600W ■ Voltage range : 0 ~ 80V/0 ~ 600V/0 ~ 1000V ■ Current range : Up to 1000A
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0000W,
0400W,
4500W,
5600W
00V/0
20kHz
63200-E-201408-1000
N mosfet 250v 600A
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DG408BP45
Abstract: AN4506 AN4839 snubber 1250 MJ2250
Text: DG408BP45 DG408BP45 Gate Turn-off Thyristor Replaces March 1998 version, DS4091-2.3 DS4091-3.0 January 2000 APPLICATIONS KEY PARAMETERS 1000A ITCM VDRM 4500V 320A IT AV dVD/dt 1000V/µs 300A/µs diT/dt • Variable speed A.C. motor drive inverters (VSD-AC)
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DG408BP45
DS4091-2
DS4091-3
DG408BP45
AN4506
AN4839
snubber 1250
MJ2250
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DG408BP45
Abstract: DG408BP
Text: DG408BP45 DG408BP45 Gate Turn-off Thyristor DS4091-4 July 2014 LN31735 APPLICATIONS KEY PARAMETERS 1000A ITCM VDRM 4500V 320A IT(AV) dVD/dt 1000V/µs 300A/µs diT/dt • Variable speed A.C. motor drive inverters (VSD-AC) ■ Uninterruptable Power Supplies
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DG408BP45
DS4091-4
LN31735)
000V/Â
DG408BP45
DG408BP
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DG406BP25
Abstract: No abstract text available
Text: DG406BP25 DG406BP25 Gate Turn-off Thyristor Replaces March 1998 version, DS4090-2.3 DS4090-3.0 January 2000 APPLICATIONS KEY PARAMETERS 1000A ITCM VDRM 2500V IT AV 400A dVD/dt 1000V/µs diT/dt 300A/µs • Variable speed A.C. motor drive inverters (VSD-AC).
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DG406BP25
DS4090-2
DS4090-3
DG406BP25
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DCR1260F42
Abstract: DCR1260F40 DCR1020F65
Text: DCR1260F42 Phase Control Thyristor Preliminary Information DS5966-1 August 2010 LN27373 FEATURES KEY PARAMETERS • Double Side Cooling High Surge Capability VDRM IT(AV) ITSM dV/dt* dI/dt APPLICATIONS 4200V 1255A 16800A 1500V/µs 1000A/µs * Higher dV/dt selections available
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DCR1260F42
DS5966-1
LN27373)
6800A
DCR1260F40
100mA,
DCR1260F42
DCR1260F40
DCR1020F65
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DCR803SG
Abstract: DCR803SG14 DCR803SG15 DCR803SG16 DCR803SG17 DCR803SG18
Text: DCR803SG DCR803SG Phase Control Thyristor Advance Information Supersedes July 2001 version, DS4451-5.0 DS4451-6.0 April 2003 FEATURES KEY PARAMETERS • Double Side Cooling VDRM 1800V IT AV 1045A ITSM 14000A dVdt 1000V/µs dI/dt 1000A/µs ■ High Surge Capability
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DCR803SG
DS4451-5
DS4451-6
4000A
DCR803SG18
DCR803SG17
DCR803SG16
DCR803SG15
DCR803SG14
DCR803SG
DCR803SG14
DCR803SG15
DCR803SG16
DCR803SG17
DCR803SG18
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511000A
Abstract: M511000A
Text: O K I semiconductor MSM511000A_ 1,048,576-WORD x 1-BIT DYNAMIC RAM GENERAL DESCRIPTION T he M S M 5 1 1000A is a new generation dynam ic RAM organized as 1,048,576 w o rds x 1 bit. The tech nolog y used to fabricate the M S M 5 1 1000A is O K I's C M O S silicon gate process technology.
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MSM511000A_
576-WORD
576-w
MSM511000A»
MSM511000A
511000A
M511000A
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1000GXHH22
Abstract: No abstract text available
Text: 1000GXHH22 TOSHIBA TOSHIBA FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE 1000GXHH22 Unit in mm HIGH SPEED RECTIFIER APPLICATIONS • • • Repetitive Peak Reverse Voltage Average Forward Current Double Side Cooling 2 - 03.5 ± 0.2 : VRRM = 4500V : If A V = 1000a
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1000GXHH22
1000a
1000GXHH22
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1000GXHH23
Abstract: No abstract text available
Text: 1000GXHH23 TOSHIBA TOSHIBA FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE 1QGGGXHH23 Unit in mm HIGH SPEED RECTIFIER APPLICATIONS. 2 - 03.5 ± 0.2 • • • Repetitive Peak Reverse Voltage Average Forward Current Double Side Cooling : VRRM = 4500V : Ip AV = 1000A
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1000GXHH23
1QGGGXHH23
1000GXHH23
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BUK456-1000A
Abstract: BUK456 1000A MOS BUK456-1000B T0220AB
Text: Philips Components BUK456-1000A BUK456-1000B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode fleld-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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BUK456-1000A
BUK456-1000B
BUK456
-1000A
-1000B
T0220AB;
M89-1162/RC
BUK456-1000A
1000A MOS
BUK456-1000B
T0220AB
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 1000GXHH23 TOSHIBA FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE 1000GXHH23 Unit in mm HIGH SPEED RECTIFIER APPLICATIONS. 2 -0 3 .5 ±0.2 • • • Repetitive Peak Reverse Voltage Average Forward Current Double Side Cooling : VRRM = 4500V : If AV = 1000A
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1000GXHH23
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