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    Semtech Corporation AVP1000-IBE3

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    Avnet Americas AVP1000-IBE3 Bulk 46 Weeks 1,000
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    Avnet Silica AVP1000-IBE3 38 Weeks 1
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    Symmetry Electronics AVP1000-IBE3 1 1
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    Advantech Co Ltd UNOP-1000I-BE

    PCI and Mini-PCI Expansion card for UNO-4673A/4683 - Bulk (Alt: UNOP-1000I-BE)
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    Avnet Americas UNOP-1000I-BE Bulk 10 Weeks 1
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    RS UNOP-1000I-BE Bulk 1
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    1000IB Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    HMBTA13

    Abstract: No abstract text available
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6842 Issued Date : 1994.07.29 Revised Date : 2002.12.27 Page No. : 1/4 HMBTA13 NPN EPITAXIAL PLANAR TRANSISTOR Description Darlington Amplifier Transistor Absolute Maximum Ratings SOT-23 • Maximum Temperatures


    Original     		HE6842 HMBTA13 OT-23 HMBTA13 PDF

    PZTA14

    Abstract: No abstract text available
    Text: PZTA14 Darlington NPN Silicon Planar Epitaxial Transistor COLLECTOR 2, 4 P b Lead Pb -Free 4 1. BASE 2.COLLECTOR 3.EMITTER 4.COLLECTOR BASE 1 1 2 3 SOT-223 3 EMITTER ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Symbol Value Unit Collector-Emitter Voltage VCEO 30 V Collector-Base Voltage


    Original     		PZTA14 OT-223 PZTA14 100ms 22-Sep-05 OT-223 PDF

    BTD1383L3

    Abstract: No abstract text available
    Text: Spec. No. : C214L3 Issued Date : 2005.01.20 Revised Date : Page No. : 1/4 CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor BTD1383L3 Description • The BTD1383L3 is a darlington amplifier transistor. Symbol Outline BTD1383L3 SOT-223


    Original     		C214L3 BTD1383L3 BTD1383L3 OT-223 UL94V-0 PDF

    SOT23 MARKING

    Abstract: HMBTA14 HMBTA64
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6807 Issued Date : 1998.08.12 Revised Date : 2002.10.25 Page No. : 1/3 HMBTA64 PNP SILICON TRANSISTOR Description The HMBTA64 is designed for application requiring extremely high current gain at collector current to 500mA.


    Original     		HE6807 HMBTA64 HMBTA64 500mA. OT-23 HMBTA14 SOT23 MARKING HMBTA14 PDF

    MARKING Y1 TRANSISTOR

    Abstract: Y2 marking HJ2584 Y2MARKING PDTC* MARKING CODE
    Text: HI-SINCERITY Spec. No. : HJ200204 Issued Date : 1998.04.08 Revised Date : 2005.07.14 Page No. : 1/4 MICROELECTRONICS CORP. HJ2584 PNP EPITAXIAL PLANAR TRANSISTOR Description The HJ2584 is designed for use in low voltage and low drop out regulator applications.


    Original     		HJ200204 HJ2584 HJ2584 O-252 183oC 217oC 260oC MARKING Y1 TRANSISTOR Y2 marking Y2MARKING PDTC* MARKING CODE PDF

    HMBTA14

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : HE6841 Issued Date : 1994.07.29 Revised Date : 2004.09.01 Page No. : 1/4 MICROELECTRONICS CORP. HMBTA14 NPN EPITAXIAL PLANAR TRANSISTOR Description Darlington Amplifier Transistor SOT-23 Absolute Maximum Ratings • Maximum Temperatures


    Original     		HE6841 HMBTA14 OT-23 183oC 217oC 260oC HMBTA14 PDF

    HMBTA13

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : HE6842 Issued Date : 1994.07.29 Revised Date : 2004.09.08 Page No. : 1/4 MICROELECTRONICS CORP. HMBTA13 NPN EPITAXIAL PLANAR TRANSISTOR Description Darlington Amplifier Transistor SOT-23 Absolute Maximum Ratings • Maximum Temperatures


    Original     		HE6842 HMBTA13 OT-23 183oC 217oC 260oC HMBTA13 PDF

    HE9512

    Abstract: HM14 HM64 PT 10000
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE9512 Issued Date : 1996.04.17 Revised Date : 2001.09.20 Page No. : 1/3 HM64 PNP EPITAXIAL PLANAR TRANSISTOR Description The HM64 is a darlington amplifier transistor designed for applications requiring extremely high current gain.


    Original     		HE9512 HE9512 HM14 HM64 PT 10000 PDF

    HM27

    Abstract: No abstract text available
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. :HE9517-B Issued Date : 1997.06.06 Revised Date : 2000.10.01 Page No. : 1/3 HM27 NPN EPITAXIAL PLANAR TRANSISTOR Description Darlington transistor. Absolute Maximum Ratings • Maximum Temperatures Storage Temperature . -55 ~ +150 °C


    Original     		HE9517-B HM27 PDF

    HJ2584

    Abstract: No abstract text available
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HJ200204 Issued Date : 1998.04.08 Revised Date : 2002.02.18 Page No. : 1/3 HJ2584 PNP EPITAXIAL PLANAR TRANSISTOR Description The HJ2584 is designed for use in low voltage and low drop out regulator applications.


    Original     		HJ200204 HJ2584 HJ2584 O-252 PDF

    HMBTA14

    Abstract: No abstract text available
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6841 Issued Date : 1994.07.29 Revised Date : 2001.06.15 Page No. : 1/3 HMBTA14 NPN EPITAXIAL PLANAR TRANSISTOR Description Darlington Amplifier Transistor Absolute Maximum Ratings • Maximum Temperatures Storage Temperature. -55 ~ +150 °C


    Original     		HE6841 HMBTA14 HMBTA14 PDF

    BTN2129T3

    Abstract: 06102 d 772 transistor
    Text: CYStech Electronics Corp. Spec. No. : C853T3 Issued Date : 2004.07.14 Revised Date : 2004.09.02 Page No. : 1/5 NPN Epitaxial Planar Transistor BTN2129T3 Description The BTN2129T3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed


    Original     		C853T3 BTN2129T3 BTN2129T3 O-126 R2120 UL94V-0 06102 d 772 transistor PDF

    transistor h2a

    Abstract: diode marking H2 H2A transistor HAD825
    Text: HI-SINCERITY Spec. No. : HE6406 Issued Date : 1994.01.13 Revised Date : 2005.01.25 Page No. : 1/4 MICROELECTRONICS CORP. HAD825 NPN EPITAXIAL PLANAR TRANSISTOR Features Darlington transistor. Absolute Maximum Ratings TO-92 • Maximum Temperatures Storage Temperature. -55 ~ +150 °C


    Original     		HE6406 HAD825 200oC 183oC 217oC 260oC 245oC transistor h2a diode marking H2 H2A transistor HAD825 PDF

    Untitled

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. :HE9517 Issued Date : 1997.06.06 Revised Date : 2004.12.21 Page No. : 1/4 MICROELECTRONICS CORP. HM27 NPN EPITAXIAL PLANAR TRANSISTOR Description Darlington transistor. SOT-89 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature . -55 ~ +150 °C


    Original     		HE9517 OT-89 183oC 217oC 260oC PDF

    HMPSA14

    Abstract: HMPSA64
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6305 Issued Date : 1992.09.09 Revised Date : 2002.02.21 Page No. : 1/4 HMPSA14 NPN SILICON TRANSISTOR Description The HMPSA14 is designed for applications requiring extremely high current gain collector current to 500mA.


    Original     		HE6305 HMPSA14 HMPSA14 500mA. HMPSA64 HMPSA64 PDF

    H2584

    Abstract: 1s 838
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6716 Issued Date : 1996.02.01 Revised Date : 2002.02.18 Page No. : 1/3 H2584 PNP EPITAXIAL PLANAR TRANSISTOR Description The H2584 is designed for use in low voltage and low dropout regulator applications.


    Original     		HE6716 H2584 H2584 O-220 1s 838 PDF

    IC 4047

    Abstract: data sheet of IC 4047 IC 4047 BE ic 4047 datasheet BTN2129E3
    Text: CYStech Electronics Corp. Spec. No. : C853E3 Issued Date : 2004.06.15 Revised Date : 2004.07.14 Page No. : 1/5 NPN Epitaxial Planar Transistor BTN2129E3 Description The BTN2129E3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed


    Original     		C853E3 BTN2129E3 BTN2129E3 O-220AB R2120 UL94V-0 IC 4047 data sheet of IC 4047 IC 4047 BE ic 4047 datasheet PDF

    darlington transistor SOT-23

    Abstract: HMBTA14
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6841 Issued Date : 1994.07.29 Revised Date : 2002.10.25 Page No. : 1/3 HMBTA14 NPN EPITAXIAL PLANAR TRANSISTOR Description Darlington Amplifier Transistor Absolute Maximum Ratings SOT-23 • Maximum Temperatures


    Original     		HE6841 HMBTA14 OT-23 darlington transistor SOT-23 HMBTA14 PDF

    HMBT6427

    Abstract: transistor tl
    Text: HI-SINCERITY Spec. No. : HE6846 Issued Date : 1995.07.21 Revised Date : 2004.08.31 Page No. : 1/4 MICROELECTRONICS CORP. HMBT6427 NPN EPITAXIAL PLANAR TRANSISTOR Description Darlington Transistor SOT-23 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature. -55 ~ +150 °C


    Original     		HE6846 HMBT6427 OT-23 200oC 183oC 217oC 260oC 245oC HMBT6427 transistor tl PDF

    HM14

    Abstract: HM64
    Text: HI-SINCERITY Spec. No. :HE5908 Issued Date : 1998.04.09 Revised Date : 2004.12.21 Page No. : 1/4 MICROELECTRONICS CORP. HM14 NPN EPITAXIAL PLANAR TRANSISTOR Description The HM14 is a darlington amplifier transistor designed for applications requiring extremely high current gain.


    Original     		HE5908 OT-89 183oC 217oC 260oC HM14 HM64 PDF

    HMBTA14

    Abstract: HMBTA64
    Text: HI-SINCERITY Spec. No. : HE6807 Issued Date : 1998.08.12 Revised Date : 2004.09.07 Page No. : 1/4 MICROELECTRONICS CORP. HMBTA64 PNP SILICON TRANSISTOR Description The HMBTA64 is designed for application requiring extremely high current gain at collector current to 500mA.


    Original     		HE6807 HMBTA64 HMBTA64 500mA. OT-23 HMBTA14 183oC 217oC 260oC HMBTA14 PDF

    100MHZ

    Abstract: HMPSA14 HMPSA64
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6333-B Issued Date : 1992.11.18 Revised Date : 2000.10.01 Page No. : 1/4 HMPSA64 PNP SILICON TRANSISTOR Description The HMPSA64 is designed for application requiring extremely high current gain at collector currents to 500mA.


    Original     		HE6333-B HMPSA64 HMPSA64 500mA. HMPSA14 100MHZ HMPSA14 PDF

    c215a

    Abstract: 1902 transistor BTNA13A3 BTNA14A3
    Text: CYStech Electronics Corp. Spec. No. : C215A3 Issued Date : 2003.03.27 Revised Date : Page No. : 1/4 Gentral Purpose NPN Epitaxial Planar Transistor BTNA13A3 Description • The BTNA14A3 is a darlington amplifier transistor • Complementary to BTPA63A3. Equivalent Circuit


    Original     		C215A3 BTNA13A3 BTNA14A3 BTPA63A3. UL94V-0 BTNA14A3 c215a 1902 transistor BTNA13A3 PDF

    C214A

    Abstract: 1902 transistor CYStech Electronics BTNA14A3
    Text: CYStech Electronics Corp. Spec. No. : C214A3 Issued Date : 2003.03.27 Revised Date : Page No. : 1/4 Gentral Purpose NPN Epitaxial Planar Transistor BTNA14A3 Description • The BTNA14A3 is a darlington amplifier transistor • Complementary to BTPA64A3. Equivalent Circuit


    Original     		C214A3 BTNA14A3 BTNA14A3 BTPA64A3. UL94V-0 C214A 1902 transistor CYStech Electronics PDF