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    1000V 20A TRANSISTOR Search Results

    1000V 20A TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    1000V 20A TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    AN7254

    Abstract: AN7260 HGTG20N100D2 G20N100D2
    Text: HGTG20N100D2 20A, 1000V N-Channel IGBT May 1995 Features Package • 34A, 1000V JEDEC STYLE TO-247 EMITTER • Latch Free Operation COLLECTOR • Typical Fall Time 520ns GATE • High Input Impedance • Low Conduction Loss COLLECTOR BOTTOM SIDE METAL Description


    Original     		HGTG20N100D2 O-247 520ns HGTG20N100D2 150oC. AN7254 AN7260 G20N100D2 PDF

    G20N100D2

    Abstract: AN7254 AN7260 HGTG20N100D2
    Text: HGTG20N100D2 S E M I C O N D U C T O R 20A, 1000V N-Channel IGBT May 1995 Features Package • 34A, 1000V JEDEC STYLE TO-247 EMITTER • Latch Free Operation COLLECTOR • Typical Fall Time 520ns GATE • High Input Impedance • Low Conduction Loss COLLECTOR


    Original     		HGTG20N100D2 O-247 520ns HGTG20N100D2 150oC. G20N100D2 AN7254 AN7260 PDF

    G20N100D2

    Abstract: GE 639 transistor 901 u 620 tg g20n100 443 20N TSC-1000
    Text: S m HGTG20N100D2 a r r ì 20A, 1000V N-Channel IGBT M ay 1995 Features Package • 34 A, 1000V JEDEC STYLE TO-247 EMfTTER • Latch Free Operation • Typical Fall Time 520ns • High Input Impedance • Low Conduction Loss Description The HG TG 20N 100D 2 is a MOS gated high voltage switching


    OCR Scan     		HGTG20N100D2 O-247 520ns G20N100D2 GE 639 transistor 901 u 620 tg g20n100 443 20N TSC-1000 PDF

    Untitled

    Abstract: No abstract text available
    Text: APTM100DA40T1G VDSS = 1000V RDSon = 400mΩ typ @ Tj = 25°C ID = 20A @ Tc = 25°C Boost chopper MOSFET Power Module 5 6 11 Application • • • CR1 3 4 Q2 NTC Features • 9 10 1 2 AC and DC motor control Switched Mode Power Supplies Power Factor Correction


    Original     		APTM100DA40T1G PDF

    APTM100DA40T1G

    Abstract: APT0406 APT0502
    Text: APTM100DA40T1G VDSS = 1000V RDSon = 400mΩ typ @ Tj = 25°C ID = 20A @ Tc = 25°C Boost chopper MOSFET Power Module 5 6 11 Application • • • CR1 3 4 Q2 NTC Features • 9 10 1 2 AC and DC motor control Switched Mode Power Supplies Power Factor Correction


    Original     		APTM100DA40T1G APTM100DA40T1G APT0406 APT0502 PDF

    APT0406

    Abstract: APT0502 APTM100SK40T1G Thermistor 100,000 cycle mosfet 16a 800v
    Text: APTM100SK40T1G VDSS = 1000V RDSon = 400mΩ typ @ Tj = 25°C ID = 20A @ Tc = 25°C Buck chopper MOSFET Power Module 5 11 6 Application • • Q1 7 AC and DC motor control Switched Mode Power Supplies Features 8 NTC 3 4 • CR2 1 2 • • • 12 Power MOS 8 MOSFETs


    Original     		APTM100SK40T1G APT0406 APT0502 APTM100SK40T1G Thermistor 100,000 cycle mosfet 16a 800v PDF

    Untitled

    Abstract: No abstract text available
    Text: APTM100SK40T1G VDSS = 1000V RDSon = 400mΩ typ @ Tj = 25°C ID = 20A @ Tc = 25°C Buck chopper MOSFET Power Module 5 11 6 Application • • Q1 7 AC and DC motor control Switched Mode Power Supplies Features 8 NTC 3 4 • CR2 1 2 • • • 12 Power MOS 8 MOSFETs


    Original     		APTM100SK40T1G PDF

    wf vqe 24 d

    Abstract: AN7254 AN7260 HGTG20N100D2 transistor c90 wx2 transistor
    Text: HARRIS SEIUCOND SECTOR bflE D 33 HARRIS HGTG20N100D2 S E M I C O N D U C T O R 4302271 Ü0SD21D bOT HAS 20A, 1000V N-Channel IGBT December 1993 Package Features JEDEC STYLE TO-247 TOP VIEW • 34 Amp, 1000 Volt • Latch Free Operation ^EMITTER • Typical Fall Time 520ns


    OCR Scan     		0SD21D TG20N10OD2 520ns HGTG20N100D2 wf vqe 24 d AN7254 AN7260 transistor c90 wx2 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: m H A R R IS S E M I C O N D U C T O R HGTG20N100D2 20A, 1000V N-Channel IGBT December 1993 Package Features JEDEC STYLE TO-247 TOP VIEW • 34 Am p, 1000 Volt • Latch Free Operation • Typical Fall Tim e 520ns • High Input Im pedance • Low C onduction Loss


    OCR Scan     		HGTG20N100D2 O-247 520ns HGTG20N100D2 PDF

    buw13a philips semiconductor

    Abstract: BUT22A BUT228 BUP23A SOT93 BUT18 PHILIPS SEMICONDUCTOR mje13008 SOT-93 bus13 philips transistor VCE 1000V
    Text: BSE J> N AUER PHILIPS/DISCRETE • bbS3T31 001bE21 Ö ■ Power Devices HIGH SPEED, HIGH VOLTAGE TRANSISTORS cont. TYPE NO. PACKAGE OUTLINE •cfDOt1) 6A v CE(*at) MAX. at lc/lB t ft y p a tlc (Inductive load) 400V 450V 1.5V at 4A/0.8A 180ns at 4A 850V 1000V


    OCR Scan     		bki53T31 BUT18 BUT18A O-220AB 180ns BUT18F BUT18AF OT-186 BUT12 buw13a philips semiconductor BUT22A BUT228 BUP23A SOT93 BUT18 PHILIPS SEMICONDUCTOR mje13008 SOT-93 bus13 philips transistor VCE 1000V PDF

    buw13a philips semiconductor

    Abstract: 180NS mje13008 BUS12 BUS12A BUT12 BUT12A BUT18 BUS13 BUT18AF
    Text: N AUER PHILIPS/DISCRETEL ESE D • bbS HÌBl 001b521 Ö ■ Power Devices HIGH SPEED, HIGH VOLTAGE TRANSISTORS cont. V CE(*at) MAX. at lc/lB tftyp at lc (Inductive load) 400V 450V 1.5V at 4A/0.8A 180ns at 4A 850V 1000V 400V 450V 1.5V at 4A/0.8A 180ns at 4A


    OCR Scan     		S3T31 BUT18 O-220AB 180ns BUT18A BUT18F OT-186 BUT18AF BUT12 buw13a philips semiconductor mje13008 BUS12 BUS12A BUT12A BUS13 BUT18AF PDF

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE, BSE D • QOlbEEl fl ■ T~3 I Power Devices HIGH SPEED, HIGH VOLTAGE TRANSISTORS cont. V CE(*at) MAX. at lc/lB tftyp at lc (Inductive load) 400V 450V 1,5V at 4A /0.8A 180ns at 4A 850V 1000V 400V 450V 1.5V at 4 A /0.8A 180ns at 4A


    OCR Scan     		180ns OT-93 400ns BUV298AV BUV298V OT-227B1 -220AB BUT18F PDF

    TRANSISTOR BIPOLAR 400V 20A

    Abstract: igbt 1000v 10A P-Channel IGBT igbt 500V 15A igbt 40A 600V P-CHANNEL 400V 15A N channel 600v 20a IGBT igbt 400V 40A igbt 400V 20A 400V P-Channel IGBT
    Text: — MCT/IGBT/DIODES 3 INSULATED GATE BIPOLAR TRANSISTORS PAGE SELECTION G U ID E .


    OCR Scan     		HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S HGTP6N40E1D, HGTP6N50E1D HGTP10N40C1, HGTH12N40C1, HGTP10N40C1D, HGTP10N40E1D, TRANSISTOR BIPOLAR 400V 20A igbt 1000v 10A P-Channel IGBT igbt 500V 15A igbt 40A 600V P-CHANNEL 400V 15A N channel 600v 20a IGBT igbt 400V 40A igbt 400V 20A 400V P-Channel IGBT PDF

    igbt 400V 20A

    Abstract: igbt 500V 15A diode 500v 10A diode 10a 400v 20A 500v igbt igbt 1000v 10A igbt 1200V 20A DIODE 20A igbt 400V 5A current sensing 400V
    Text: I- MCT/IGBT/DIODES 3 INSULATED GATE BIPOLAR TRANSISTORS IGBTs PAGE SELECTION G U ID E .


    OCR Scan     		HGTD6N40E1, HGTD6N50E1, HGTD10N40F1, HGTD10N50F1, HGTH12N40C1, HGTM12N40C1, HGTP10N40C1, HGTM12N60D1 HGTP12N60D1 HGTH20N40C1, igbt 400V 20A igbt 500V 15A diode 500v 10A diode 10a 400v 20A 500v igbt igbt 1000v 10A igbt 1200V 20A DIODE 20A igbt 400V 5A current sensing 400V PDF

    BU2506DF

    Abstract: 1500v 02xs t199 5A 800V BU508
    Text: 42 Power Devices High Speed, High Voltage Transistors in order of current rating (cont.) Package Outline V CE (sat) tf typ at lc lC(DC)<1> V CES V CEO max. at Iq/I b (Inductive Load) BUT12 BUT12A TO-220AB 8A 850V 1000V 400V 450V 1.5V at 6A/1.2A 1.5V at 5A/1 A


    OCR Scan     		BUT12 BUT12A O-220AB OT-93 OT-199 OT-186A OT-227B1 OT-227B1 200ns BU2506DF 1500v 02xs t199 5A 800V BU508 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD-94305E IRG4MC40U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • • • • Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof UltraFast Speed Operation 8KHz - 40KHz, > 200KHz in Resonent Mode • High Operating Frequency


    Original     		PD-94305E IRG4MC40U 40KHz, 200KHz O-254AA. MIL-PRF-19500 PDF

    TRANSISTOR BIPOLAR 400V 20A

    Abstract: No abstract text available
    Text: PD - 95428A IRG4BC40UPbF UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: optimized for high operating frequencies 8-40 KHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		5428A IRG4BC40UPbF O-220AB O-220AB 4BC40UPbF TRANSISTOR BIPOLAR 400V 20A PDF

    Untitled

    Abstract: No abstract text available
    Text: PD-94305F IRG4MC40U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • • • • Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof UltraFast Speed Operation 8KHz - 40KHz, > 200KHz in Resonent Mode • High Operating Frequency


    Original     		PD-94305F IRG4MC40U 40KHz, 200KHz RectifierO-254AA. MIL-PRF-19500 PDF

    TRANSISTOR BIPOLAR 400V 20A

    Abstract: mosfet 20a 300v N CHANNEL MOSFET 10A 1000V IRG4MC40U 960V 1000V 20A transistor
    Text: PD-94305F IRG4MC40U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • • • • Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof UltraFast Speed Operation 8KHz - 40KHz, > 200KHz in Resonent Mode • High Operating Frequency


    Original     		PD-94305F IRG4MC40U 40KHz, 200KHz -254AA. MIL-PRF-19500 TRANSISTOR BIPOLAR 400V 20A mosfet 20a 300v N CHANNEL MOSFET 10A 1000V IRG4MC40U 960V 1000V 20A transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 95428A IRG4BC40UPbF UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: optimized for high operating frequencies 8-40 KHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		5428A IRG4BC40UPbF O-220AB O-220AB PDF

    1000A diode

    Abstract: 1000V 20A transistor E80276 QM1000HA-2HB transistor VCE 1000V QM10
    Text: MITSUBISHI TRANSISTOR MODULES QM1000HA-2HB HIGH POWER SWITCHING USE INSULATED TYPE QM1000HA-2HB • • • • • IC Collector current . 1000A VCEX Collector-emitter voltage . 1000V hFE DC current gain. 750


    Original     		QM1000HA-2HB E80276 E80271 47MAX. 1000A diode 1000V 20A transistor E80276 QM1000HA-2HB transistor VCE 1000V QM10 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor MMIX1B20N300C VCES = 3000V IC110 = 20A VCE sat  6.0V (Electrically Isolated Tab) C Symbol Test Conditions G Maximum Ratings VCES TJ = 25°C to 150°C


    Original     		MMIX1B20N300C IC110 20N300C PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 95429A IRG4BC40WPbF INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50% reduction of Eoff parameter


    Original     		5429A IRG4BC40WPbF 150KHz 4BC40WPbF O-220AB PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 95429A IRG4BC40WPbF INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50% reduction of Eoff parameter


    Original     		5429A IRG4BC40WPbF 150KHz O-220AB PDF