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    1000V POWER MOSFET RELIABILITY REPORT Search Results

    1000V POWER MOSFET RELIABILITY REPORT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    1000V POWER MOSFET RELIABILITY REPORT Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    max5062

    Abstract: MAX5064
    Text: MAX5064 RELIABILITY REPORT FOR MAX5064BATC+T PLASTIC ENCAPSULATED DEVICES February 15, 2011 MAXIM INTEGRATED PRODUCTS 120 SAN GABRIEL DR. SUNNYVALE, CA 94086 Approved by Richard Aburano Quality Assurance Manager, Reliability Operations Maxim Integrated Products. All rights reserved.


    Original     		MAX5064 MAX5064BATC 250mA. NOP5B1002A, NOP5B1003B, NOP5B1004B, max5062 MAX5064 PDF

    MAX1044ESA

    Abstract: C9016
    Text: MAX1044 RELIABILITY REPORT FOR MAX1044ESA+ PLASTIC ENCAPSULATED DEVICES March 4, 2011 MAXIM INTEGRATED PRODUCTS 120 SAN GABRIEL DR. SUNNYVALE, CA 94086 Approved by Sokhom Chum Quality Assurance Reliability Engineer Maxim Integrated Products. All rights reserved.


    Original     		MAX1044 MAX1044ESA+ InfoS01 /-1000V /-100mA. XEAAVQ004B, MAX1044ESA C9016 PDF

    MAX5976

    Abstract: MAX5976BETE
    Text: MAX5976 RELIABILITY REPORT FOR MAX5976AETE+/ MAX5976BETE+ PLASTIC ENCAPSULATED DEVICES June 10, 2011 MAXIM INTEGRATED PRODUCTS 120 SAN GABRIEL DR. SUNNYVALE, CA 94086 Approved by Richard Aburano Quality Assurance Manager, Reliability Engineering Maxim Integrated Products. All rights reserved.


    Original     		MAX5976 MAX5976AETE MAX5976BETE+ /MAX5976BETE+ JESD22-A114. 100mA JESD78. MAX5976 MAX5976BETE PDF

    MAX894L

    Abstract: MAX894LESA NSO package mosfet reliability testing report
    Text: MAX894LESA Rev. A RELIABILITY REPORT FOR MAX894LESA PLASTIC ENCAPSULATED DEVICES February 17, 2004 MAXIM INTEGRATED PRODUCTS 120 SAN GABRIEL DR. SUNNYVALE, CA 94086 Written by Reviewed by Jim Pedicord Quality Assurance Reliability Lab Manager Bryan J. Preeshl


    Original     		MAX894LESA MAX894L 100pf MAX894LESA NSO package mosfet reliability testing report PDF

    calibration pot in process industry

    Abstract: No abstract text available
    Text: MAX1848ExA Rev. B RELIABILITY REPORT FOR MAX1848ExA PLASTIC ENCAPSULATED DEVICES November 25, 2002 MAXIM INTEGRATED PRODUCTS 120 SAN GABRIEL DR. SUNNYVALE, CA 94086 Written by Reviewed by Jim Pedicord Quality Assurance Reliability Lab Manager Bryan J. Preeshl


    Original     		MAX1848ExA MAX1848 100pf MAX1848) calibration pot in process industry PDF

    Quasi-resonant Converter for induction cooker

    Abstract: IGBT 60A spice model 1000V igbt dc to dc buck converter CAR IGNITION WITH IGBTS 10 kw schematic induction heating Quasi-resonant Converter induction cooker applications FQPF18N50 1 kw schematic induction heating 600V igbt dc to dc buck converter pwm igbt based ac-dc converter
    Text: The Power Franchise Summer - 2002 FEATURED IN THIS ISSUE 1200V Stealth fast/soft recovery avalanche energy rated diodes . . . Page 4 Trench MOSFETs for 42V automotive applications . . . Page 5 Bottomless SO-8 Package PowerTrench family . . . Page 6 .And More! . . . Page 7 and 8


    Original     		Semiconducto01 Quasi-resonant Converter for induction cooker IGBT 60A spice model 1000V igbt dc to dc buck converter CAR IGNITION WITH IGBTS 10 kw schematic induction heating Quasi-resonant Converter induction cooker applications FQPF18N50 1 kw schematic induction heating 600V igbt dc to dc buck converter pwm igbt based ac-dc converter PDF

    ZVT uc3875

    Abstract: 500w Full bridge transformer UC3875 ZVS design APT9804 unitrode manual sem-900 phase shifted zero voltage SEM900 UC3875 ZVT full bridge pwm controller uc3875 Bill Andreycak
    Text: APT9804 Ò APPLICATION NOTE By: Kenneth Dierberger Richard Redl Leo Saro High-Voltage MOSFET Behavior in Soft-Switching Converters: Analysis and Reliability Improvements Presented at Intelec ‘98 San Francisco Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating


    Original     		APT9804 SEM-900, UC3875 U-136A. 135/D. ZVT uc3875 500w Full bridge transformer UC3875 ZVS design APT9804 unitrode manual sem-900 phase shifted zero voltage SEM900 ZVT full bridge pwm controller uc3875 Bill Andreycak PDF

    ZVT uc3875

    Abstract: uc3875 500w UC3875 phase shifted zero voltage ZVT full bridge pwm controller uc3875 Unitrode uc3875 300 zvs UC3875 ZVS design Designing a Phase Shifted Zero Voltage Transition ZVT Power Converter 500w Full bridge transformer block diagram explanation of uc3875
    Text: Application Note APT9804 Rev B February 20, 2004 High-Voltage MOSFET Behavior in Soft-Switching Converters: Analysis and Reliability Improvements By Kenneth Dierberger Richard Redl Leo Saro Presented at Intelec ‘98 San Francisco Circuit diagrams external to APT products are included as a means of illustrating typical applications. Consequently,


    Original     		APT9804 UC3875 U-136A. 135/D. ZVT uc3875 uc3875 500w phase shifted zero voltage ZVT full bridge pwm controller uc3875 Unitrode uc3875 300 zvs UC3875 ZVS design Designing a Phase Shifted Zero Voltage Transition ZVT Power Converter 500w Full bridge transformer block diagram explanation of uc3875 PDF

    IRS2631D

    Abstract: IRS2631 12V dynamo micro inverter IRS2631DJ IRS26310D IRS26310DJPBF "micro inverter" 600V HVIC Three phase inverter mosfet Diagram
    Text: IRS26310DJPBF – High-Voltage 3-Phase Gate Driver IC with DC Bus Over-Voltage Protection HVIC / MOTOR CONTROL IRS26310D typical application connection IRS26310DJPbF DCBUS + High-Voltage 3-Phase Gate Driver IC with DC Bus Over-Voltage Protection THE POWER MANAGEMENT LEADER


    Original     		IRS26310DJPbF 200mA 350mA 530ns 530ns 290ns 44-lead 10207FS IRS2631D IRS2631 12V dynamo micro inverter IRS2631DJ IRS26310D IRS26310DJPBF "micro inverter" 600V HVIC Three phase inverter mosfet Diagram PDF

    IXAN0015

    Abstract: 0015 GE SCR Manual Design pure sine wave inverter using transformer contraves modern and radar transmitters doppler radar circuit for speed sensing contraves drive X-band doppler radar module diagram radar circuit
    Text: Home < IEEE PEDS 2001 - INDONESIA IXAN0015 Use of BiMOSFETs in Modern Radar Transmitters Ralph E. Locher and Abhijit D. Pathak, Member, IEEE g reduced by irradiation. The end result is a device, which can be optimized for either high frequency or low frequency


    Original     		IXAN0015 IXAN0015 0015 GE SCR Manual Design pure sine wave inverter using transformer contraves modern and radar transmitters doppler radar circuit for speed sensing contraves drive X-band doppler radar module diagram radar circuit PDF

    kaschke flyback transformer

    Abstract: diode AE 89A EF16 TRANSFORMER Self-Oscillating Flyback Converters kaschke bobbins LNK363 kaschke ferrite material LNK363PN Transformer kaschke 555 ic is output 230v ac
    Text: Title Specification Engineering Prototype Report for ADAK-89A 2.88W Converter Using LNK363PN LinkSwitch -XT 85–265 VAC Input, 12 V, 240 mA, 2.88W Output Application Evaluation Board for LNK363PN Author David Gale Document Number ADAK-89A Date 13th November 2006


    Original     		ADAK-89A LNK363PN in-140 kaschke flyback transformer diode AE 89A EF16 TRANSFORMER Self-Oscillating Flyback Converters kaschke bobbins LNK363 kaschke ferrite material LNK363PN Transformer kaschke 555 ic is output 230v ac PDF

    inverter overcurrent protection

    Abstract: 12V dynamo micro inverter washing machine motor control circuit diagram washing machine motor controller diagram IRS26320 3 phase motor inverters circuit diagram igbt 12v dc motor speed controller using igbt pwm dynamo electronics
    Text: IRS26320JPbF – High-Voltage 3-Phase Gate Driver IC with DC Bus Over-voltage Protection and Emergency Supply Backup IRS26320JPbF Typical Application Connection + HVIC / MOTOR CONTROL IRS26320JPbF DCBUS High-Voltage 3-Phase Gate Driver IC with DC Bus Over-Voltage Protection and Emergency Supply Backup


    Original     		IRS26320JPbF 200mA 350mA 530ns 530ns 290ns 44-lead 10208FS inverter overcurrent protection 12V dynamo micro inverter washing machine motor control circuit diagram washing machine motor controller diagram IRS26320 3 phase motor inverters circuit diagram igbt 12v dc motor speed controller using igbt pwm dynamo electronics PDF

    MTN7002ZHS3

    Abstract: T1091 17025 mosfet reliability testing report On semiconductor power MOSFET reliability report MTN7 1000V power MOSFET reliability report marking no19 sot-23
    Text: CYStech Electronics Corp. Spec. No. : C320S3 Issued Date : 2007.11.06 Revised Date : 2008.01.25 Page No. : 1/7 N-CHANNEL MOSFET MTN7002ZHS3 Description The MTN7002ZHS3 is a N-channel enhancement-mode MOSFET. Features • Low on-resistance • High ESD • High speed switching


    Original     		C320S3 MTN7002ZHS3 MTN7002ZHS3 OT-323 T1091 HS0711060098A RAC9603789-E T1091 17025 mosfet reliability testing report On semiconductor power MOSFET reliability report MTN7 1000V power MOSFET reliability report marking no19 sot-23 PDF

    1000V P-channel MOSFET

    Abstract: auirf9952q
    Text: AUTOMOTIVE GRADE PD - 97647 AUIRF9952Q HEXFET Power MOSFET Features l l l l l l l l l l Advanced Planar Technology Low On-Resistance Dual N and P Channel MOSFET Dynamic dV/dT Rating 150°C Operating Temperature Fast Switching Full Avalanche Rated Repetitive Avalanche Allowed up to


    Original     		AUIRF9952Q 1000V P-channel MOSFET auirf9952q PDF

    Untitled

    Abstract: No abstract text available
    Text: AUTOMOTIVE GRADE PD - 97647 AUIRF9952Q HEXFET Power MOSFET Features l l l l l l l l l l Advanced Planar Technology Low On-Resistance Dual N and P Channel MOSFET Dynamic dV/dT Rating 150°C Operating Temperature Fast Switching Full Avalanche Rated Repetitive Avalanche Allowed up to


    Original     		AUIRF9952Q PDF

    Untitled

    Abstract: No abstract text available
    Text: PD -97552 AUTOMOTIVE GRADE • • • • • • • • • • • Advanced Process Technology Optimized for Class D Audio Amplifier Applications Low Rds on for Improved Efficiency Low Qg for Better THD and Improved Efficiency Low Qrr for Better THD and Lower EMI


    Original     		AUIRF7675M2TR AUIRF7675M2TR1 PDF

    Untitled

    Abstract: No abstract text available
    Text: < Silicon RF Power Modules > RA33H1516M1 RoHS Compliance, 154-164MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA33H1516M1 is a 33watt RF MOSFET Amplifier Module for 12.5volt mobile radios that operate in the 154- to 164MHz range. The battery can be connected directly to the drain of the


    Original     		RA33H1516M1 154-164MHz RA33H1516M1 33watt 164MHz PDF

    9544 transistor

    Abstract: TRANSISTOR 9642 IRG4PC50U irg4ph50ud igbt failure IRG4PC40UD2 HTGB IRGPH60UD2 IRGBC20FD rectifier IGBT
    Text: Quarterly Reliability Report for T0247 / T0220 Products Manufactured at IRGB IGBT / CoPack ISSUE.3. October 1997 IGBT / CoPack Quarterly Reliability Report Page 1 of 35 Contents 1 Introduction 2 Reliability Information 3 Environmental Test Results 4 Environmental Test Conditions / Schematics


    Original     		T0247 T0220 assIRG4BC20FD IRG4BC30F IRG4BC30FD IRG4BC40F IRG4BC20U IRG4BC20UD IRG4BC30U IRG4BC30UD 9544 transistor TRANSISTOR 9642 IRG4PC50U irg4ph50ud igbt failure IRG4PC40UD2 HTGB IRGPH60UD2 IRGBC20FD rectifier IGBT PDF

    TNY277PN

    Abstract: capacitor 33uF 400V TNY277 TNY276 capacitor 1000uf 25v ADAK-91A Pi transformer design tech TNY276 APPLICATION NOTE tny277pn 1 230V AC primary to 12V, 3A secondary transformer
    Text: Title Engineering Prototype Report for ADAK-91A 8W Converter Using TNY277PN TnySwitch -III Specification 85–265 VAC Input, 12 V, 666 mA, 8W Output Application Evaluation Board for TNY277PN Author David Gale Document Number ADAK-91A Date 13th November 2006


    Original     		ADAK-91A TNY277PN TNY277PN capacitor 33uF 400V TNY277 TNY276 capacitor 1000uf 25v ADAK-91A Pi transformer design tech TNY276 APPLICATION NOTE tny277pn 1 230V AC primary to 12V, 3A secondary transformer PDF

    FAG 32 diode

    Abstract: FAG 50 diode diode FAG 50 FAG40 irfag42 1000V power MOSFET reliability report G-263
    Text: HE 0 I 4055455 GOGTZÖL fl | INTERNATIONAL Data Sheet No. PD-9.575A RECTIFIER INTERNATIONAL RECTIFIER IO R T -3 9 -1 3 REPETITIVE AVALANCHE AND dv/dt RATED IRFAG40 IRFAG4S HEXFET TRANSISTORS N-CHANNEL Product Summary 1000 Volt, 3.5 Ohm HEXFET TO-204AA TO-3 Hermetic Package


    OCR Scan     		T-39-13 O-204AA G-269 IRFAG40, IRFAG42 G-270 FAG 32 diode FAG 50 diode diode FAG 50 FAG40 1000V power MOSFET reliability report G-263 PDF

    c624 DIODE

    Abstract: c619 DIODE diode c624 c617 DIODE c619 IRFPG42 c618 diode IRFPG40 C620 diode irfpg
    Text: HE 0 I MflSSMSE QODâûbô 3 | INTERNATIONAL Data Sheet No. PD-9.576A RECTIFIER INTERNATIONAL RECTIFIER I Ö R REPETITIVE AVALANCHE AND dv/dt RATED HEXFETTRANSISTORS IRFPG40 IRFPG42 N-CHANNEL 1000 Volt, 3.5 Ohm HEXFET TO-247AC TO-3P Plastic Package Product Summary


    OCR Scan     		IRFPG40 IRFPG42 O-247AC IRFPG40, IRFPG42 T-39-13 C-624 c624 DIODE c619 DIODE diode c624 c617 DIODE c619 c618 diode C620 diode irfpg PDF

    T4 DIODE

    Abstract: irfag52
    Text: HE 0 I 4âSS4S3 000^2=14 7 | Data Sheet No. PD-9.582A INTERNATIONAL R E C T I F I E R . T-39-13 INTERNATIONAL RECTIFIER I O R REPETITIVE AVALANCHE AND dv/dt RATED IRFAG50 HEXFET TRANSISTORS IRFAG5S N-CHANNEL 1000 Volt, 2.0 Ohm HEXFET TO-204AA TO-3 Hermetic Package


    OCR Scan     		T-39-13 IRFAG50 O-204AA G-277 IRFAG50, IRFAG52 0QCH301 G-278 T4 DIODE PDF

    c628 DIODE

    Abstract: diode c626 DIODE c629 diode c631 c632 DIODE c630 diode 3g50 irf 2030 IRFPG52 diode c630
    Text: INTERNATIONAL RECTIFIER HE D I 4flSS4SE Data Sheet No. PD-9.543A INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER I 0 R REPETITIVE AVALANCHE AND dv/dt RATED HEXFETTRANSISTORS IRFPG5G IRFPG52 N-CHANNEL Product Summary 1000 Volt, 2.0 Ohm HEXFET TO-247AC TO-3P Plastic Package


    OCR Scan     		O-247AC C-631 IRFPG50, IRFPG52 T-39-15 C-632 c628 DIODE diode c626 DIODE c629 diode c631 c632 DIODE c630 diode 3g50 irf 2030 diode c630 PDF

    DIODE S3V 70

    Abstract: DIODE S3V 52 MOSFET 6A irfmg50 IRFMG50 IRFMG50D LSE 0149
    Text: Data Sheet No. PD-9.711A INTERNATIONAL RECTIFIER I O R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFMG5Q N-CHANNEL 1000 Volt, 2.0 Ohm HEXFET Product Summary The HEXFET® technology is the key to International Rectifier’s advanced line of power MOSFET transistors.


    OCR Scan     		IRFMG50D IRFMG50U O-254 mil-8-19s00 I-404 DIODE S3V 70 DIODE S3V 52 MOSFET 6A irfmg50 IRFMG50 LSE 0149 PDF