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SEMIKRON SKM100GB12T4G Igbt Module, Dual, 1.2Kv, 154A; Continuous Collector Current:154A; Collector Emitter Saturation Voltage:1.85V; Power Dissipation:-; Operating Temperature Max:125°C; Igbt Termination:Stud; Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes \|Semikron SKM100GB12T4G
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	SKM100GB12T4G	Bulk			12	1 - 10 $131.92 100 $120.61 1000 $120.61 10000 $120.61	Buy Now
Richardson RFPD	SKM100GB12T4G				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
SEMIKRON SKM100GB12T4G 22892030 Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 118A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	SKM100GB12T4G 22892030				1	1 $131.98 10 $107.04 100 $107.04 1000 $107.04 10000 $107.04	Get Quote

100GB12T4G Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: SKM 100GB12T4G 16 7% # . Absolute Maximum Ratings Symbol Conditions IGBT + : 16 7 : 5=6 7 ?* 5122 562 , >2 7 556 , @22 , A 12 52 D 16 7 512 , >2 7 F2 , @22 , >&2 , 622 , 8 2 95=6 7 8 2 9516	Original	100GB12T4G	PDF
IGBT4 Abstract: No abstract text available Text: SKM 100GB12T4G 16 7% # . Absolute Maximum Ratings Symbol Conditions IGBT + : 16 7 : 5=6 7 ?* 5122 562 , >2 7 512 , @22 , A 12 52 D 16 7 552 , >2 7 F2 , @22 , >&2 , 622 , 8 2 95=6 7 8 2 9516	Original	100GB12T4G IGBT4	PDF
Untitled Abstract: No abstract text available Text: SKM 100GB12T4G 16 7% # . Absolute Maximum Ratings Symbol Conditions IGBT + : 16 7 : 5=6 7 ?* 5122 562 , >2 7 556 , @22 , A 12 52 D 16 7 512 , >2 7 F2 , @22 , >&2 , 622 , 8 2 95=6 7 8 2 9516	Original	100GB12T4G	PDF
Untitled Abstract: No abstract text available Text: SKM 100GB12T4G 16 7% # . Absolute Maximum Ratings Symbol Conditions IGBT + : 16 7 : 5=6 7 ?* 5122 562 , >2 7 556 , @22 , A 12 52 E 16 7 512 , >2 7 B2 , @22 , >&2 , 622 , 8 2 95=6 7 8 2 9516	Original	100GB12T4G	PDF
Untitled Abstract: No abstract text available Text: SKM 100GB12T4G 16 7% # . Absolute Maximum Ratings Symbol Conditions IGBT + : 16 7 : 5=6 7 ?* 5122 562 , >2 7 556 , @22 , A 12 52 D 16 7 512 , >2 7 F2 , @22 , >&2 , 622 , 8 2 95=6 7 8 2 9516	Original	100GB12T4G	PDF
Untitled Abstract: No abstract text available Text: SKM 100GB12T4G 16 7% # . Absolute Maximum Ratings Symbol Conditions IGBT + : 16 7 : 5=6 7 ?* 5122 562 , >2 7 512 , @22 , A 12 52 D 16 7 552 , >2 7 F2 , @22 , >&2 , 622 , 8 2 95=6 7 8 2 9516	Original	100GB12T4G	PDF
Untitled Abstract: No abstract text available Text: SKM 100GB12T4G 16 7% # . Absolute Maximum Ratings Symbol Conditions IGBT + : 16 7 : 5=6 7 ?* 5122 562 , >2 7 556 , @22 , A 12 52 D 16 7 512 , >2 7 F2 , @22 , F2 , 622 , 8 2 95=6 7 8 2 9516	Original	100GB12T4G	PDF
453gb12e4s Abstract: SEMIX 71GD12E4S 300gb12e4 igbt cross-reference SKM200GB128D SEMiX 202GB12E4s SEMiX453GB12E4 101GD12E4s IGBT cross reference semikron 303GD12E4-c Text: Application Note AN-9001 Revision: 01 Issue Date: 2009-03-01 Prepared by: Dr. Arendt Wintrich Key Words: IGBT, Trench4, Switching Behaviour, Cross Reference IGBT4 and free wheeling diode CAL4 in IGBT modules General properties . 1	Original	AN-9001 453gb12e4s SEMIX 71GD12E4S 300gb12e4 igbt cross-reference SKM200GB128D SEMiX 202GB12E4s SEMiX453GB12E4 101GD12E4s IGBT cross reference semikron 303GD12E4-c	PDF