T0160NB45A
Abstract: No abstract text available
Text: Date:- 15 Feb, 2013 Data Sheet Issue:- 1 Insulated Gate Bi-Polar Transistor Type T0160NB45A Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate. 2800
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T0160NB45A
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IGBT 2000V .50A
Abstract: t0160na
Text: Date:- 5 Nov, 2003 Provisional Data Data Sheet Issue:- 4 Absolute Maximum Ratings VOLTAGE RATINGS Insulated Gate Bi-Polar Transistor Type T0160NA52A MAXIMUM LIMITS UNITS Collector – emitter voltage 5200 V VDC link Permanent DC voltage for 100 FIT failure rate.
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T0160NA52A
IGBT 2000V .50A
t0160na
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T0160NA45A
Abstract: T016 D-68623 IGBT 2000V .50A
Text: Date:- 24 Aug, 2004 Provisional Data Data Sheet Issue:- 1 Absolute Maximum Ratings VOLTAGE RATINGS Insulated Gate Bi-Polar Transistor Type T0160NA45A MAXIMUM LIMITS UNITS Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate.
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T0160NA45A
T0160NA45A
T016
D-68623
IGBT 2000V .50A
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GA100NA60UP
Abstract: No abstract text available
Text: GA100NA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed 0 to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses
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GA100NA60UP
E78996
2002/95/EC
OT-227
18-Jul-08
GA100NA60UP
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GA100NA60UP
Abstract: ultrafast igbt information OF ic 7400
Text: GA100NA60UP Vishay High Power Products Insulated Gate Bipolar Transistor Ultrafast Speed IGBT , 50 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed 0 to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses
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GA100NA60UP
OT-227
18-Jul-08
GA100NA60UP
ultrafast igbt
information OF ic 7400
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GA100NA60UP
Abstract: No abstract text available
Text: GA100NA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed 0 to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses
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GA100NA60UP
E78996
2002/95/EC
OT-227
11-Mar-11
GA100NA60UP
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GA200SA60SP
Abstract: No abstract text available
Text: Bulletin I27235 07/06 GA200SA60SP Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard : Optimized for minimum saturation voltage and low operating frequencies up to 1kHz • Lowest conduction losses available • Fully isolated package 2,500 volt AC
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I27235
GA200SA60SP
OT-227
OT-227
GA200SA60SP
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Untitled
Abstract: No abstract text available
Text: Bulletin I27236 07/06 GA200SA60UP Ultra-FastTM Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for minimum saturation voltage and operating frequencies up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses
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I27236
GA200SA60UP
20kHz
OT-227
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TRANSISTOR TC 100
Abstract: GA100NA60UP ga100na60 bipolar transistor td tr ts tf 6000uf
Text: GA100NA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed 0 to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses
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GA100NA60UP
E78996
2002/95/EC
OT-227
11-Mar-11
TRANSISTOR TC 100
GA100NA60UP
ga100na60
bipolar transistor td tr ts tf
6000uf
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CGC SWITCH
Abstract: 600v 400a IGBT driver ga200sa60 GA200SA60SP
Text: Bulletin I27235 07/06 GA200SA60SP Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard : Optimized for minimum saturation voltage and low operating frequencies up to 1kHz • Lowest conduction losses available • Fully isolated package 2,500 volt AC
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I27235
GA200SA60SP
OT-227
OT-227
12-Mar-07
CGC SWITCH
600v 400a IGBT driver
ga200sa60
GA200SA60SP
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ZETEX T 1049
Abstract: rele 12V 10A mosfet base inverter with chargers circuit zetex line TRANSISTOR REPLACEMENT GUIDE ZETEX 1049 ZDT1049 zetex 795a laptop inverter ccfl dc-ac converter royer jim Williams
Text: Application Note 21 Issue 2 January 1996 Bipolar Transistor Considerations for Battery Powered Equipment Leading to Efficiency and Competitive Advantages in Portable Systems Neil Chadderton Introduction The last few years has witnessed an increasing trend towards portability, this no
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15mmx15mm
FMMT717
ZETEX T 1049
rele 12V 10A
mosfet base inverter with chargers circuit
zetex line TRANSISTOR REPLACEMENT GUIDE
ZETEX 1049
ZDT1049
zetex 795a
laptop inverter ccfl
dc-ac converter royer
jim Williams
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TX033
Abstract: westcode igbt
Text: WESTCODE Date:- 3 Jan, 2003 Data Sheet Issue:- 2 An IXYS Company Provisional data Insulated Gate Bi-Polar Transistor Type T1500TA25B Development Type Number: TX033TA25B Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage
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T1500TA25B
TX033TA25B)
T1500TA25B
TX033
westcode igbt
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ga200sa60up
Abstract: No abstract text available
Text: Bulletin I27236 07/06 GA200SA60UP Ultra-FastTM Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for minimum saturation voltage and operating frequencies up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses
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I27236
GA200SA60UP
20kHz
12-Mar-07
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IGBT cross-reference
Abstract: AN9006 IGBT application note IGBT Pspice SGR20N40LTF
Text: IGBT SGR20N40L / SGU20N40L General Description Features Insulated Gate Bipolar Transistors IGBTs with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. They also have wide noise immunity. These
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SGR20N40L
SGU20N40L
SGU20N40L
SGU20N40LTU
O-251
IGBT cross-reference
AN9006
IGBT application note
IGBT Pspice
SGR20N40LTF
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IGBT cross-reference
Abstract: TO252-DPAK transistors cross reference list
Text: SGR15N40L / SGU15N40L General Description Features Insulated Gate Bipolar Transistors IGBTs with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. They also have wide noise immunity. These
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SGR15N40L
SGU15N40L
SGR15N40LTF
O-252
SGR15N40LTM
AN-9006:
IGBT cross-reference
TO252-DPAK
transistors cross reference list
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Untitled
Abstract: No abstract text available
Text: IGBT FGS15N40L General Description Features Insulated Gate Bipolar Transistors IGBTs with trench gate structure have superior performance in conductance and switching to planar gate structure and also have wide noise immunity. These devices are well suitable for
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FGS15N40L
FGS15N40LTF
FGS15N40LTU
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AN9006
Abstract: No abstract text available
Text: IGBT SGR20N40L / SGU20N40L General Description Features Insulated Gate Bipolar Transistors IGBTs with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. They also have wide noise immunity. These
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SGR20N40L
SGU20N40L
O-252
SGR20N40LTF
SGR20N40LTM
AN9006
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sd1490
Abstract: transistor bs 140
Text: SD1490 RF POWER BIPOLAR TRANSISTORS TV/LINEAR APPLICATIONS FEATURES SUMMARY • 470 - 860 MHz Figure 1. Package ■ 28 VOLTS ■ CLASS A PUSH PULL ■ DESIGNED FOR HIGH POWER LINEAR OPERATION ■ HIGH SATURATED POWER CAPABILITY ■ GOLD METALLIZATION ■ DIFFUSED EMITTER BALLAST RESISTORS
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SD1490
SD1490
transistor bs 140
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Untitled
Abstract: No abstract text available
Text: SGR15N40L / SGU15N40L General Description Features Insulated Gate Bipolar Transistors IGBTs with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. They also have wide noise immunity. These
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SGR15N40L
SGU15N40L
SGU15N40L
SGU15N40LTU
O-251
AN-9006:
AN-9006
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circuit diagram induction heating
Abstract: QID3310001
Text: W M EREX QID3310001 soW HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE QID3310001 • IC . 100A • VCES . 3300V
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QID3310001
circuit diagram induction heating
QID3310001
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circuit diagram induction heating
Abstract: QID3310002 induction heating circuit diagram
Text: m W EREX QID3310002 « • ‘ SS*# SOT«'6 HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE QID 3310002 • • • • VCES . 3300V
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QID3310002
circuit diagram induction heating
QID3310002
induction heating circuit diagram
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Z7 DIODE
Abstract: Diode RJ 4B KT234510 bipolar power transistor vce 600 volt 100a bipolar transistor 300 volt 5 ampere transistor
Text: POÜJEREX INC m *lñ tm w D E |7H 'ì4 b a i K DGD2D3H D | r " - 2 > 3 '2 .'J KT234510 Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 412)925-7272 S p l Í t mD U 3 ¡ B í p O l S t Transistor Module 100 Am peres/600 Volts Description Powerex Split-Dual Bipolar Transistor
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0002Q3H
-r-33~
KT234510
Amperes/600
KT234510
Z7 DIODE
Diode RJ 4B
bipolar power transistor vce 600 volt
100a bipolar transistor
300 volt 5 ampere transistor
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LC100A
Abstract: No abstract text available
Text: POQJEREX INC O W Tfl E R E DE | TEIMbai 00D2Q3S □ | - T - 2 ,3 ' ¿7 KT234510 X Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 412) 925-7272 S p H t-D U S l B ip O lS t Transistor Module 100 Amperes/600 Volts Description Powerex Split-Dual Bipolar Transistor
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00D2Q3S
KT234510
Amperes/600
KT234510
peres/600
LC100A
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transistor TT 3043
Abstract: tt 3043 al 336 D67FP5 IC TT 3043 d67fp6 aj204 D67FP D67FP7 638ak
Text: HIGH SPEED NPN POWER DARLINGTON TRANSISTORS D67FP5,6,7 500-700 VOLTS 100 AMP, 312.5 WATTS The D67FP is a high voltage NPN high current power darlington especially designed for use in PWM applications where fast and efficient switching is required. This device
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D67FP5
D67FP
D67FP6
D67FP7
transistor TT 3043
tt 3043
al 336
IC TT 3043
d67fp6
aj204
638ak
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