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Kyocera AVX Components 100A101JT150XT1K CAP CER 100PF 150V P90 0505
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	100A101JT150XT1K	Cut Tape	8,236		1	1 $5.74 10 $3.896 100 $2.9141 1000 $2.51466 10000 $2.51466	Buy Now
	100A101JT150XT1K	Digi-Reel	8,236		1	1 $5.74 10 $3.896 100 $2.9141 1000 $2.51466 10000 $2.51466	Buy Now
	100A101JT150XT1K	Reel	6,000		1,000	1 - 10 - 100 - 1000 $2.3897 10000 $2.3897	Buy Now
Richardson RFPD	100A101JT150XT1K				1,000	1 - 10 - 100 - 1000 $1.35 10000 $1.2	Buy Now
TTM Technologies XC2100A-10S RF DIR COUPLER 2GHZ-2.3GHZ SMD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	XC2100A-10S	Cut Tape	2,000		1	1 $7.04 10 $6.287 100 $5.1555 1000 $3.52086 10000 $3.52086	Buy Now
	XC2100A-10S	Digi-Reel	2,000		1	1 $7.04 10 $6.287 100 $5.1555 1000 $3.52086 10000 $3.52086	Buy Now
	XC2100A-10S	Reel	2,000		2,000	1 - 10 - 100 - 1000 - 10000 $3.1125	Buy Now
Richardson RFPD	XC2100A-10S		963		1	1 $6.54 10 $5.82 100 $4.36 1000 $3.42 10000 $3.42	Buy Now
	XC2100A-10S				2,000	1 - 10 - 100 - 1000 - 10000 $3.3	Buy Now
Kyocera AVX Components 100A100JW150XT1K CAP CER 10PF 150V P90 0505
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	100A100JW150XT1K	Reel	2,000		1,000	1 - 10 - 100 - 1000 $1.98914 10000 $1.80313	Buy Now
Kyocera AVX Components 100A101FW150XT1K CAP CER 100PF 150V P90 0505
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	100A101FW150XT1K	Digi-Reel	1,755		1	1 $5.15 10 $3.472 100 $2.5799 1000 $2.2172 10000 $2.2172	Buy Now
	100A101FW150XT1K	Cut Tape	1,755		1	1 $5.15 10 $3.472 100 $2.5799 1000 $2.2172 10000 $2.2172	Buy Now
	100A101FW150XT1K	Reel	1,000		1,000	1 - 10 - 100 - 1000 $2.10372 10000 $1.90965	Buy Now
Kyocera AVX Components 100A100GT150XT1K CAP CER 10PF 150V P90 0505
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	100A100GT150XT1K	Cut Tape	1,426		1	1 $6.31 10 $4.305 100 $3.2392 1000 $2.80586 10000 $2.80586	Buy Now
	100A100GT150XT1K	Digi-Reel	1,426		1	1 $6.31 10 $4.305 100 $3.2392 1000 $2.80586 10000 $2.80586	Buy Now
	100A100GT150XT1K	Reel	1,000		1,000	1 - 10 - 100 - 1000 $2.67026 10000 $2.67026	Buy Now
Avnet Americas	100A100GT150XT1K	Tape w/Leader		16 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Richardson RFPD	100A100GT150XT1K				1,000	1 - 10 - 100 - 1000 $1.47 10000 $0.94	Buy Now

Find more 100A10 price and stock on Findchips.com

100A10 Datasheets (25)

Part	Manufacturer	Description	Datasheet Type	PDF
100A100FT150XT	American Technical Ceramics	Capacitors - Ceramic Capacitors - CAP CER 10PF 150V P90 0505	Original	PDF
100A100FT150XT1K	American Technical Ceramics	Ceramic Capacitor 10PF 150V P90 0505	Original	PDF
100A100FW150XT	American Technical Ceramics	Capacitors - Ceramic Capacitors - CAP CER 10PF 150V P90 0505	Original	PDF
100A100FW150XT1K	American Technical Ceramics	Ceramic Capacitor 10PF 150V P90 0505	Original	PDF
100A100GT150XT	American Technical Ceramics	Capacitors - Ceramic Capacitors - CAP CER 10PF 150V P90 0505	Original	PDF
100A100GT150XT1K	American Technical Ceramics	Ceramic Capacitor 10PF 150V P90 0505	Original	PDF
100A100GW150XT	American Technical Ceramics	Capacitors - Ceramic Capacitors - CAP CER 10PF 150V P90 0505	Original	PDF
100A100GW150XT1K	American Technical Ceramics	Ceramic Capacitor 10PF 150V P90 0505	Original	PDF
100A100JT150XT	American Technical Ceramics	Capacitors - Ceramic Capacitors - CAP CER 10PF 150V P90 0505	Original	PDF
100A100JT150XT1K	American Technical Ceramics	Ceramic Capacitor 10PF 150V P90 0505	Original	PDF
100A100JW150XT	American Technical Ceramics	Capacitors - Ceramic Capacitors - CAP CER 10PF 150V P90 0505	Original	PDF
100A100JW150XT1K	American Technical Ceramics	Ceramic Capacitor 10PF 150V P90 0505	Original	PDF
100A101FT150XT	American Technical Ceramics	Capacitors - Ceramic Capacitors - CAP CER 100PF 150V P90 0505	Original	PDF
100A101FT150XT1K	American Technical Ceramics	Ceramic Capacitor 100PF 150V P90 0505	Original	PDF

100A101FW150XT	American Technical Ceramics	Capacitors - Ceramic Capacitors - CAP CER 100PF 150V P90 0505	Original	PDF
100A101FW150XT1K	American Technical Ceramics	Ceramic Capacitor 100PF 150V P90 0505	Original	PDF
100A101GT150XT	American Technical Ceramics	Capacitors - Ceramic Capacitors - CAP CER 100PF 150V P90 0505	Original	PDF
100A101JCA150XT	American Technical Ceramics	Capacitors - Ceramic Capacitors - CAP CER 100PF 150V P90 0505	Original	PDF
100A101JP150XT	American Technical Ceramics	Capacitors - Ceramic Capacitors - CAP CER 100PF 150V P90 0505	Original	PDF
100A101JT150XT	American Technical Ceramics	Capacitors - Ceramic Capacitors - CAP CER 100PF 150V P90 0505	Original	PDF

100A10 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Continental RSDA Abstract: AUTOMATIC PHASE SELECTOR 13VAC 200 Amp Fuse copper bus bar RSDA 100-280VAC Text: RS Series Single Phase DIN Rail Mount Relays FEATURES/BENEFITS • Automatic shutdown on • • • • • overtemperature Built-in, replaceable, semiconductor fuse Integrated heat sink Mounts on DIN rail or panel Optically isolated Touch safe • LED indicator	Original	28Vdc/9mA 280Vac 5-15mA 20Vac, amp-B00 Continental RSDA AUTOMATIC PHASE SELECTOR 13VAC 200 Amp Fuse copper bus bar RSDA 100-280VAC	PDF
915 MHz RFID Abstract: HSMS-286A METAL DETECTOR circuit for make IC RFID 2.45 GHz 2.45 GHz single chip transmitter HSMS-2850 HSMS-286C 100A101MCA50 "zero-bias schottky diode" mark code t4 diode Text: Surface Mount Microwave Schottky Detector Diodes in SOT-323 SC-70 Technical Data HSMS-285A Series HSMS-286A Series Features • Surface Mount SOT-323 Package • High Detection Sensitivity: Up to 50 mV/µW at 915 MHz Up to 35 mV/µW at 2.45 GHz Up to 25 mV/µW at 5.80 GHz	Original	OT-323 SC-70) HSMS-285A HSMS-286A HSMS-285A 5965-8838E 5966-4282E 915 MHz RFID METAL DETECTOR circuit for make IC RFID 2.45 GHz 2.45 GHz single chip transmitter HSMS-2850 HSMS-286C 100A101MCA50 "zero-bias schottky diode" mark code t4 diode	PDF
epsilam 10 Abstract: BY239 BDT91 LLE18150X SC15 erie 1250-003 diode BY239 Text: DISCRETE SEMICONDUCTORS DATA SHEET LLE18150X NPN silicon planar epitaxial microwave power transistor Product specification File under Discrete Semiconductors, SC15 Philips Semiconductors September 1994 Philips Semiconductors Product specification NPN silicon planar epitaxial	Original	LLE18150X epsilam 10 BY239 BDT91 LLE18150X SC15 erie 1250-003 diode BY239	PDF
philips ferrite 4330-030 Abstract: philips ferrite 4b1 TRansistor 648 BY239 BDT91 LLE18010X j160 capacitor philips Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D159 LLE18010X NPN microwave power transistor Product specification Supersedes data of December 1994 1999 Apr 22 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors	Original	M3D159 LLE18010X SCA63 125002/00/02/pp12 philips ferrite 4330-030 philips ferrite 4b1 TRansistor 648 BY239 BDT91 LLE18010X j160 capacitor philips	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRFG35005N Rev. 5, 1/2008 MRFG35005NT1 replaced by MRFG35005ANT1. MRFG35005NT1 Gallium Arsenide PHEMT Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB	Original	MRFG35005N MRFG35005NT1 MRFG35005ANT1. MRFG35005NT1	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRFG35005MT1 Rev. 3, 1/2006 Replaced by MRFG35005NT1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.	Original	MRFG35005MT1 MRFG35005NT1.	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRFG35010MT1 Rev. 4, 7/2005 Gallium Arsenide PHEMT RF Power Field Effect Transistors MRFG35010NT1 MRFG35010MT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Devices are unmatched and are suitable for use in Class	Original	MRFG35010MT1 MRFG35010NT1 MRFG35010MT1	PDF
transistor GT 1081 Abstract: MRFG35010AR5 Text: Freescale Semiconductor Technical Data Document Number: MRFG35010A Rev. 0, 5/2006 Gallium Arsenide PHEMT MRFG35010AR1 MRFG35010AR5 RF Power Field Effect Transistor Designed for WiMAX, WLL/MMDS or UMTS driver and final applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for	Original	MRFG35010A MRFG35010AR1 MRFG35010AR5 MRFG35010A transistor GT 1081 MRFG35010AR5	PDF
GL 7812 Abstract: ATC 2603 LDMOS NEC Text: N PRELIMINARY DATA SHEET IO 3W, L/S-BAND MEDIUM POWER NE552R479A SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE • SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX • CLASS AB OPERATION Linear Gain1 IN • ANALOG CELLULAR PHONES:	Original	NE552R479A 24-Hour GL 7812 ATC 2603 LDMOS NEC	PDF
tl249 Abstract: tl2472 TL244 TRANSISTOR tl131 TL251 tl239 PTFB182503 PTFB182503FL tl250 TL242 Text: PTFB182503EL PTFB182503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier	Original	PTFB182503EL PTFB182503FL PTFB182503EL PTFB182503FL 240-watt H-33288-6, H-34288-6, tl249 tl2472 TL244 TRANSISTOR tl131 TL251 tl239 PTFB182503 tl250 TL242	PDF
13009 TRANSISTOR equivalent Abstract: D 13009 K transistor M 9718 4221 motorola transistor transistor E 13009 MRFG35030 transistor d 13009 MRFG35030R5 transistor 9718 transistor E 13009 equivalent Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRFG35030R5/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line Gallium Arsenide PHEMT Freescale Semiconductor, Inc. RF Power Field Effect Transistor MRFG35030R5 Designed for WLL base station applications with frequencies from 3400 to	Original	MRFG35030R5/D MRFG35030R5 13009 TRANSISTOR equivalent D 13009 K transistor M 9718 4221 motorola transistor transistor E 13009 MRFG35030 transistor d 13009 MRFG35030R5 transistor 9718 transistor E 13009 equivalent	PDF
marking 0619 Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRFG35005MT1 Rev. 1, 1/2005 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35005MT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB	Original	MRFG35005MT1 MRFG35005MT1 marking 0619	PDF
8772 P Abstract: motorola 10116 transistor 17556 A113 MRFG35003MT1 motorola 6809 PLD15 transistor 115 h 8772 p 17556 transistor Text: Freescale Semiconductor, Inc. MOTOROLA Order this document by MRFG35003MT1/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line MRFG35003MT1 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies	Original	MRFG35003MT1/D MRFG35003MT1 8772 P motorola 10116 transistor 17556 A113 MRFG35003MT1 motorola 6809 PLD15 transistor 115 h 8772 p 17556 transistor	PDF
RF FET TRANSISTOR 3 GHZ Abstract: A113 MRFG35003NT1 Text: Freescale Semiconductor Technical Data Document Number: MRFG35003N Rev. 4, 1/2006 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35003NT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB	Original	MRFG35003N MRFG35003NT1 RF FET TRANSISTOR 3 GHZ A113 MRFG35003NT1	PDF

Untitled Abstract: No abstract text available Text: TOKEN 電流感測電阻器分流合金電阻器採樣取樣電阻器微歐姆低值電阻器德鍵電子工業股份有限公司台灣 : 台灣省台北縣五股鄉中興路一段 137 號電話 : +886-2-29810109 ；傳真 : +886-2-29887487 大陸 : 广东省深圳市南山区创业路中兴工业城综合楼十二楼	Original	NE1/10, NE1/10 50ppm/Â 25ppm/Â 15ppm/Â 10ppm/Â	PDF
6 017 03 61 Abstract: A113 MRFG35010MT1 MRFG35010NT1 D55342M07 Text: Freescale Semiconductor Technical Data Document Number: MRFG35010MT1 Rev. 5, 2/2006 Replaced by MRFG35010NT1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.	Original	MRFG35010MT1 MRFG35010NT1. 6 017 03 61 A113 MRFG35010MT1 MRFG35010NT1 D55342M07	PDF
Marking Z7 Gate Driver Abstract: MRFG35005MT1 A113 MRFG35005NT1 Text: Freescale Semiconductor Technical Data Document Number: MRFG35005MT1 Rev. 3, 1/2006 Replaced by MRFG35005NT1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.	Original	MRFG35005MT1 MRFG35005NT1. Marking Z7 Gate Driver MRFG35005MT1 A113 MRFG35005NT1	PDF
MX0912B250Y Abstract: 33-AS IEC134 015 capacitor philips Text: Data shaat •tatua data of Issu* HILXPS MX0912B250Y Preliminary specification NPN silicon planar epitaxial microwave power transistor June 1992 SbE D INTERNATIONAL • 7110fl2b Ü04b34fc, 7Q3 H P H I N FEATURES APPLICATION DESCRIPTION • Interdigitated structure; high	OCR Scan	33-AS" MX0912B250Y G04b34b T-33-Ã 711Dfl2b 004b352 0QMb43? MX0912B250Y 33-AS IEC134 015 capacitor philips	PDF
Untitled Abstract: No abstract text available Text: S G S - T H O S I M S O N S D 1 89 5 -0 3 m . RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS 1.65 GHz 28 VOLTS OVERLAY DIE GEOMETRY ALL GOLD METALLIZED SYSTEM HIGH RELIABILITY AND RUGGEDNESS COOMON BASE P o u t = 15 W MIN. WITH 9.2 dB GAIN PIN CONNECTION	OCR Scan	SD1895-03 D07D75h	PDF
Untitled Abstract: No abstract text available Text: Philips Components MZ0912B100Y D ISC R ETE SEM ICO N D U CTO R S D a ta s h a e t • t a lu s P re fim in a iy s p e c ific a tio n d a le o f le s u e J u ly 1 9 9 0 NPN silicon planar epitaxial microwave power transistor FEATU RES APPLICATIO N D ESCRIPTIO N	OCR Scan	MZ0912B100Y	PDF
Untitled Abstract: No abstract text available Text: Whnl mL'nM HP Ea Wc kL aE rTdT Surface Mount Zero Bias Schottky Detector Diodes Technical Data Features • Surface M ount SOT-23/ SOT-143 Package • H igh D etection Sensitivity: Package Lead Code Identification Top V iew 40 mV/\|iW at 915 MHz 30 mV/jiW at 2.45 GHz	OCR Scan	OT-23/ OT-143 HSMS-285X HSMS-285X OT-23 OT143 DD127Ã 5963-2333E 5963-5030E	PDF
MF1011B900Y Abstract: SC15 Text: Philips Semiconductors Product specification Microwave power transistor MF1011B900Y FEATURES QUICK REFERENCE DATA • Suitable for short and medium pulse applications up to 100 \|as pulse width, duty factor 10% Microwave performance up to T mb = 25 °C in a common-base class C	OCR Scan	MF1011B900Y MLC725 OT448A. MF1011B900Y SC15	PDF
NPN Silicon Epitaxial Planar Transistor Abstract: MZ0912B50Y TACAN Text: Data sheet statut Preliminary apedfrcatfon date ol Issue July 1990 MZ0912B50Y NPN silicon planar epitaxial microwave power transistor F EATU RES APPLICATION d e s c r ip t io n • Interdigitated structure; high emitter efficiency. • O iffused emitter ballasting	OCR Scan	MZ0912B50Y NPN Silicon Epitaxial Planar Transistor MZ0912B50Y TACAN	PDF
30374 Abstract: Esan Text: E-SAN ELECTRONIC CO LTD Active Delay Line TTL Interface • Industry Standard 24 E D • 10 Tap Output Specifications: • Delay tolerance BD374Q2 DOODQSfi Ö • /^3 100A Series • 30 Pin Dip Package Features: • Schottky TTL interface • Low power schottky available named " 1 00AL-1 Oxxx'	OCR Scan	30374Q2 20/TAP 10/TAP 100B-10xxx" 100AM-10xxx 00A-10500 00A-10101 00A-10151 00A-10201 00A-10251 30374 Esan	PDF

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100A10 Search Results

100A10 Price and Stock

Kyocera AVX Components 100A101JT150XT1K

TTM Technologies XC2100A-10S

Kyocera AVX Components 100A100JW150XT1K

Kyocera AVX Components 100A101FW150XT1K

Kyocera AVX Components 100A100GT150XT1K

100A10 Datasheets (25)

100A10 Datasheets Context Search

Continental RSDA

915 MHz RFID

epsilam 10

philips ferrite 4330-030

Untitled

Untitled

Untitled

transistor GT 1081

GL 7812

tl249

13009 TRANSISTOR equivalent

marking 0619

8772 P

RF FET TRANSISTOR 3 GHZ

Untitled

6 017 03 61

Marking Z7 Gate Driver

MX0912B250Y

Untitled

Untitled

Untitled

MF1011B900Y

NPN Silicon Epitaxial Planar Transistor

30374