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    Kyocera AVX Components 100A100JT150XT1K

    CAP CER 10PF 150V P90 0505
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    DigiKey 100A100JT150XT1K Reel 6,000 1,000
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    Mouser Electronics 100A100JT150XT1K 622
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    Kyocera AVX Components 100A100FW150XT1K

    CAP CER 10PF 150V P90 0505
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    DigiKey 100A100FW150XT1K Cut Tape 2,774 1
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    100A100FW150XT1K Digi-Reel 2,774 1
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    Mouser Electronics 100A100FW150XT1K 1,328
    • 1 $9.97
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    Richardson RFPD 100A100FW150XT1K 36,000 1,000
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    Kyocera AVX Components 100A100FT150XT1K

    CAP CER 10PF 150V P90 0505
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    DigiKey 100A100FT150XT1K Reel 1,000 1,000
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    Richardson RFPD 100A100FT150XT1K 1,000
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    Aim Dynamics 4LSF-100A:100MA-0.75X0.75(1-)

    0.75" SPLIT-CORE 100A:100mA 1%
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    DigiKey 4LSF-100A:100MA-0.75X0.75(1-) 8 1
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    GeneSic Semiconductor Inc M3P100A-100

    BRIDGE RECT 3P 1KV 100A MODULE
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    100A100 Datasheets (12)

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    100A100FT150XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 10PF 150V P90 0505 Original PDF
    100A100FT150XT1K American Technical Ceramics Ceramic Capacitor 10PF 150V P90 0505 Original PDF
    100A100FW150XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 10PF 150V P90 0505 Original PDF
    100A100FW150XT1K American Technical Ceramics Ceramic Capacitor 10PF 150V P90 0505 Original PDF
    100A100GT150XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 10PF 150V P90 0505 Original PDF
    100A100GT150XT1K American Technical Ceramics Ceramic Capacitor 10PF 150V P90 0505 Original PDF
    100A100GW150XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 10PF 150V P90 0505 Original PDF
    100A100GW150XT1K American Technical Ceramics Ceramic Capacitor 10PF 150V P90 0505 Original PDF
    100A100JT150XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 10PF 150V P90 0505 Original PDF
    100A100JT150XT1K American Technical Ceramics Ceramic Capacitor 10PF 150V P90 0505 Original PDF
    100A100JW150XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 10PF 150V P90 0505 Original PDF
    100A100JW150XT1K American Technical Ceramics Ceramic Capacitor 10PF 150V P90 0505 Original PDF

    100A100 Datasheets Context Search

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    Continental RSDA

    Abstract: AUTOMATIC PHASE SELECTOR 13VAC 200 Amp Fuse copper bus bar RSDA 100-280VAC
    Text: RS Series Single Phase DIN Rail Mount Relays FEATURES/BENEFITS • Automatic shutdown on • • • • • overtemperature Built-in, replaceable, semiconductor fuse Integrated heat sink Mounts on DIN rail or panel Optically isolated Touch safe • LED indicator


    Original     		28Vdc/9mA 280Vac 5-15mA 20Vac, amp-B00 Continental RSDA AUTOMATIC PHASE SELECTOR 13VAC 200 Amp Fuse copper bus bar RSDA 100-280VAC PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35005N Rev. 5, 1/2008 MRFG35005NT1 replaced by MRFG35005ANT1. MRFG35005NT1 Gallium Arsenide PHEMT Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB


    Original     		MRFG35005N MRFG35005NT1 MRFG35005ANT1. MRFG35005NT1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35005MT1 Rev. 3, 1/2006 Replaced by MRFG35005NT1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original     		MRFG35005MT1 MRFG35005NT1. PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRFG35010MT1 Rev. 4, 7/2005 Gallium Arsenide PHEMT RF Power Field Effect Transistors MRFG35010NT1 MRFG35010MT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Devices are unmatched and are suitable for use in Class


    Original     		MRFG35010MT1 MRFG35010NT1 MRFG35010MT1 PDF

    transistor GT 1081

    Abstract: MRFG35010AR5
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35010A Rev. 0, 5/2006 Gallium Arsenide PHEMT MRFG35010AR1 MRFG35010AR5 RF Power Field Effect Transistor Designed for WiMAX, WLL/MMDS or UMTS driver and final applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for


    Original     		MRFG35010A MRFG35010AR1 MRFG35010AR5 MRFG35010A transistor GT 1081 MRFG35010AR5 PDF

    GL 7812

    Abstract: ATC 2603 LDMOS NEC
    Text: N PRELIMINARY DATA SHEET IO 3W, L/S-BAND MEDIUM POWER NE552R479A SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE • SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX • CLASS AB OPERATION Linear Gain1 IN • ANALOG CELLULAR PHONES:


    Original     		NE552R479A 24-Hour GL 7812 ATC 2603 LDMOS NEC PDF

    tl249

    Abstract: tl2472 TL244 TRANSISTOR tl131 TL251 tl239 PTFB182503 PTFB182503FL tl250 TL242
    Text: PTFB182503EL PTFB182503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier


    Original     		PTFB182503EL PTFB182503FL PTFB182503EL PTFB182503FL 240-watt H-33288-6, H-34288-6, tl249 tl2472 TL244 TRANSISTOR tl131 TL251 tl239 PTFB182503 tl250 TL242 PDF

    13009 TRANSISTOR equivalent

    Abstract: D 13009 K transistor M 9718 4221 motorola transistor transistor E 13009 MRFG35030 transistor d 13009 MRFG35030R5 transistor 9718 transistor E 13009 equivalent
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRFG35030R5/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line Gallium Arsenide PHEMT Freescale Semiconductor, Inc. RF Power Field Effect Transistor MRFG35030R5 Designed for WLL base station applications with frequencies from 3400 to


    Original     		MRFG35030R5/D MRFG35030R5 13009 TRANSISTOR equivalent D 13009 K transistor M 9718 4221 motorola transistor transistor E 13009 MRFG35030 transistor d 13009 MRFG35030R5 transistor 9718 transistor E 13009 equivalent PDF

    marking 0619

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRFG35005MT1 Rev. 1, 1/2005 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35005MT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB


    Original     		MRFG35005MT1 MRFG35005MT1 marking 0619 PDF

    8772 P

    Abstract: motorola 10116 transistor 17556 A113 MRFG35003MT1 motorola 6809 PLD15 transistor 115 h 8772 p 17556 transistor
    Text: Freescale Semiconductor, Inc. MOTOROLA Order this document by MRFG35003MT1/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line MRFG35003MT1 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies


    Original     		MRFG35003MT1/D MRFG35003MT1 8772 P motorola 10116 transistor 17556 A113 MRFG35003MT1 motorola 6809 PLD15 transistor 115 h 8772 p 17556 transistor PDF

    RF FET TRANSISTOR 3 GHZ

    Abstract: A113 MRFG35003NT1
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35003N Rev. 4, 1/2006 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35003NT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB


    Original     		MRFG35003N MRFG35003NT1 RF FET TRANSISTOR 3 GHZ A113 MRFG35003NT1 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOKEN FL Current Shunt Resistors Current Shunt Resistors Token’s Shunt Resistors FL for high-current applications aid precision measurement. Preview Current shunt resistors are low resistance precision resistors used to measure AC or DC electrical currents by the voltage drop those currents create


    Original     		70m/S2 FL-13, FL-13-A, FLQ54-A, FLQ54-B, FLQ54-C 100mV PDF

    Untitled

    Abstract: No abstract text available
    Text: TOKEN 電流感測電阻器 分流合金電阻器 採樣取樣電阻器 微歐姆低值電阻器 德鍵電子工業股份有限公司 台灣 : 台灣省台北縣五股鄉中興路一段 137 號 電話 : +886-2-29810109 ； 傳真 : +886-2-29887487 大陸 : 广东省深圳市南山区创业路中兴工业城综合楼十二楼


    Original     		NE1/10, NE1/10 50ppm/Â 25ppm/Â 15ppm/Â 10ppm/Â PDF

    6 017 03 61

    Abstract: A113 MRFG35010MT1 MRFG35010NT1 D55342M07
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35010MT1 Rev. 5, 2/2006 Replaced by MRFG35010NT1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original     		MRFG35010MT1 MRFG35010NT1. 6 017 03 61 A113 MRFG35010MT1 MRFG35010NT1 D55342M07 PDF

    100A5R1BW150X

    Abstract: LQG11A12NJ00 LQG11A39NJ00 LQG11A3N9S00 LQG11A5N6S00 LQG11AR10J00
    Text: 19-1524; Rev 2; 11/99 MAX2264/MAX2265/MAX2266 Evaluation Kits Each kit is assembled with either the MAX2264, MAX2265 or MAX2266 and incorporates input and output matching components optimized for the 824MHz to 849MHz RF frequency band. These EV kits are capable of operating at


    Original     		MAX2264/MAX2265/MAX2266 MAX2264/MAX2265/ MAX2266 IS-98-based IS-136-based 900MHz MAX2264, MAX2265 100A5R1BW150X LQG11A12NJ00 LQG11A39NJ00 LQG11A3N9S00 LQG11A5N6S00 LQG11AR10J00 PDF

    A113

    Abstract: MRFG35005MT1 MRFG35005NT1
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35005MT1 Rev. 2, 5/2005 Gallium Arsenide PHEMT MRFG35005NT1 MRFG35005MT1 RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB


    Original     		MRFG35005MT1 MRFG35005NT1 MRFG35005NT1 A113 MRFG35005MT1 PDF

    ATC 1184

    Abstract: A113 MRFG35005MT1 C 4804 transistor "class AB Linear" z9 ma 814
    Text: MOTOROLA Order this document MRFG35005MT1/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line Gallium Arsenide PHEMT MRFG35005MT1 RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB


    Original     		MRFG35005MT1/D MRFG35005MT1 ATC 1184 A113 MRFG35005MT1 C 4804 transistor "class AB Linear" z9 ma 814 PDF

    Laser-Distanz-Sensor OADM 13I6564-S35A

    Abstract: baumer electric CH-8501 ohdk 101490 16P56 baumer electric CH-8500 frdk baumer+OSDK+10D9001+/+OEDK+10P5101
    Text: Präzis, messbar besser. Optoelektronische Sensoren. Lichtleiter und Lichtleitergeräte. Edition 2011 Keine Zeitung, keine Schokolade, kein Auto, kein Computer, kein Mobiltelefon könnte heute hergestellt werden, kein Brief oder Paket seinen Empfänger erreichen und kein Flasche Bier könnte abgefüllt werden, wenn nicht optische Sensoren Objekte erfassen, Distanzen messen, Farben erkennen,


    Original     		CN-201612 VE-1070 CH-8501 Laser-Distanz-Sensor OADM 13I6564-S35A baumer electric CH-8501 ohdk 101490 16P56 baumer electric CH-8500 frdk baumer+OSDK+10D9001+/+OEDK+10P5101 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Available at: Available at http://www.motorola.com/rf, Go to Tools SEMICONDUCTOR TECHNICAL DATA RF Reference Design Library The RF GaAs Line MRFG35003MT1 BWA Gallium Arsenide PHEMT RF Power Field Effect Transistor DEVICE CHARACTERISTICS From Device Data Sheet


    Original     		RDMRFG35003MT1BWA MRFG35003MT1 PDF

    transistor std 13007

    Abstract: ATC 601 IPC transistor E 13007 FET 4016 MRFG35010 A113 MRFG35010NT1 j 13007 TRANSISTOR 1309-2
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35010N Rev. 6, 2/2006 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35010NT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. This device is unmatched and is suitable for use in Class


    Original     		MRFG35010N MRFG35010NT1 transistor std 13007 ATC 601 IPC transistor E 13007 FET 4016 MRFG35010 A113 MRFG35010NT1 j 13007 TRANSISTOR 1309-2 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor, Inc. MOTOROLA Available at: Available at http://www.motorola.com/rf, Go to Tools SEMICONDUCTOR TECHNICAL DATA RF Reference Design Library The RF GaAs Line MRFG35003MT1 BWA Gallium Arsenide PHEMT RF Power Field Effect Transistor DEVICE CHARACTERISTICS From Device Data Sheet


    Original     		MRFG35003MT1 MRFG35003MT1 RDMRFG35003MT1BWA PDF

    MRFG35010ANT1

    Abstract: IRL 724 N A113 AN1955 arco 466 14584 atc 17-33 transistor d 4515 EQUIVALENT
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35010AN Rev. 0, 5/2006 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35010ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


    Original     		MRFG35010AN MRFG35010ANT1 MRFG35010ANT1 IRL 724 N A113 AN1955 arco 466 14584 atc 17-33 transistor d 4515 EQUIVALENT PDF

    transistor std 13007

    Abstract: 0944
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35010N Rev. 6, 2/2006 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35010NT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. This device is unmatched and is suitable for use in Class


    Original     		MRFG35010N MRFG35010NT1 MRFG35010N transistor std 13007 0944 PDF

    transistor on 4959

    Abstract: GT5040
    Text: Document Number: MRFG35002N6 Rev. 0, 2/2006 Freescale Semiconductor Technical Data Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35002N6T1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 0.5 to 5.0 GHz. Device is unmatched and is suitable for use in Class AB


    Original     		MRFG35002N6 MRFG35002N6T1 MRFG35002N6 transistor on 4959 GT5040 PDF