capacitor 30 pf
Abstract: capacitor variable capacitor zener 1206 5.1 v capacitor 180 nF capacitor variable GRM42-6C0G102J50 resistor 1k 142-0701-801 variable capacitors
Text: DB-54003L-880 BOM Component ID Description Value Case size Manufacturer C1, C9 Capacitor 30 pF 100B ATC Part Code 3R0 C2, C8 Variable Capacitor 0.8 -:- 8 pF Johnson 27293 4R3 C3 Capacitor 4.3 pF 100B ATC C4, C5 Capacitor 18 pF 100B ATC 180 C6 Capacitor 9.1 pF
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DB-54003L-880
GRM42-6C0G121J50
GRM42-6C0G102J50
GRM42-6X7R104K50
EXCELDRC35C
214W-1-103E
OD110
BZX284C5V1
capacitor 30 pf
capacitor
variable capacitor
zener 1206 5.1 v
capacitor 180 nF
capacitor variable
GRM42-6C0G102J50
resistor 1k
142-0701-801
variable capacitors
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PDF
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variable capacitor
Abstract: capacitor 30 pf variable capacitors capacitor variable 142-0701-801 VARIABLE capacitor DATA SHEET capacitor 27293 GRM42-6C0G121J50 EXCELDRC35C
Text: DB-55008L-880 BOM Component ID Description Value Case size Manufacturer C1, C9 Capacitor 30 pF 100B ATC Part Code 3R0 C2, C8 Variable Capacitor 0.8 -:- 8 pF Johnson 27293 4R3 C3 Capacitor 4.3 pF 100B ATC C4, C5 Capacitor 18 pF 100B ATC 180 C6 Capacitor 9.1 pF
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Original
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DB-55008L-880
GRM42-6C0G121J50
GRM42-6C0G102J50
GRM42-6X7R104K50
EXCELDRC35C
214W-1-103E
OD110
BZX284C5V1
variable capacitor
capacitor 30 pf
variable capacitors
capacitor variable
142-0701-801
VARIABLE capacitor DATA SHEET
capacitor
27293
GRM42-6C0G121J50
EXCELDRC35C
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PDF
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PSMN015-100B
Abstract: PSMN015-100P
Text: DISCRETE SEMICONDUCTORS DATA SHEET PSMN015-100B; PSMN015-100P N-channel TrenchMOS TM transistor Product specification August 1999 Philips Semiconductors Product specification N-channel TrenchMOS(TM) transistor FEATURES PSMN015-100B; PSMN015-100P SYMBOL QUICK REFERENCE DATA
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PSMN015-100B;
PSMN015-100P
PSMN015-100P
603502/300/03/pp12
PSMN015-100B
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PDF
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PSMN015-100P,127
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET PSMN015-100B; PSMN015-100P N-channel TrenchMOS TM transistor Product specification August 1999 Philips Semiconductors Product specification N-channel TrenchMOS(TM) transistor FEATURES PSMN015-100B; PSMN015-100P SYMBOL QUICK REFERENCE DATA
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Original
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PSMN015-100B;
PSMN015-100P
PSMN015-100P
O220AB)
PSMN015-100P,127
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PDF
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PULSED LASER DIODE DRIVER
Abstract: DLD-100B Directed Energy laser diode driver 200 mhz 6E7S
Text: • Output Current <5A To 40A • Repetition Frequency To 1 MHz • Variable Pulse Width From 12ns to 1µs • Economical OEM Module DLD-100B PULSED LASER DIODE DRIVER The DLD-100B is a high speed, high current pulsed laser diode driver designed to operate at 5A to 40A
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DLD-100B
DLD-100B
ou30A
DLD-100B.
600ns
PULSED LASER DIODE DRIVER
Directed Energy
laser diode driver 200 mhz
6E7S
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PDF
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buk638-500b
Abstract: No abstract text available
Text: Pow er Devices Power M O SFET Transistors Logic Level FET's in order of Voltage/RDS on (cont.) VDS MAX (V) Type No. Package Outline Iq max (A) Ptot max (W) RDs ON max (fl) 100 100 100 100 100 100 100 100 100 100 100 100 100 BUK541-100A BUK552-100B BUK542-100B
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OCR Scan
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BUK541-100A
BUK552-100B
BUK542-100B
BUK542-100A
BUK552-100A
BUK553-100B
BUK543-100B
BUK553-100A
BUK543-100A
BUK555-100B
buk638-500b
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PDF
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buk453
Abstract: BUK453-100B TE2024 NDS 40-30 BUK453-100A T0220AB M89 transistor
Text: BUK453-100A BUK453-100B Philips Components PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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OCR Scan
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BUK453-100A
BUK453-100B
BUK453
-100A
-100B
M89-1139/RST
BUK453-100B
TE2024
NDS 40-30
BUK453-100A
T0220AB
M89 transistor
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PDF
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Ha 100b
Abstract: BUK452-100A BUK452-100B T0220AB buk452
Text: Philips Components BUK452-100A BUK452-100B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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OCR Scan
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BUK452-100A
BUK452-100B
BUK452
-100A
-100B
T0220AB;
M89-1140/RST
Ha 100b
BUK452-100A
BUK452-100B
T0220AB
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PDF
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7610
Abstract: 7610-100B
Text: BUK75/7610-100B TrenchMOS standard level FET Rev. 02 — 19 September 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology.
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BUK75/7610-100B
BUK7510-100B
O-220AB)
BUK7610-100B
OT404
7610
7610-100B
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PDF
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BUK455
Abstract: BUK455-100A BUK455-100B T0220AB
Text: Philips Components BUK455-100A BUK455-100B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic envelope. he device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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OCR Scan
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BUK455-100A
BUK455-100B
BUK455
-100A
-100B
M89-1156/RC
BUK455-100A
BUK455-100B
T0220AB
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PDF
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HA 100B
Abstract: BUK436-100A BUK436-100B BUK436
Text: BUK436-100A BUK436-100B Philips Components PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope, me device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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OCR Scan
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BUK436-100A
BUK436-100B
BUK436
-100A
-100B
OT-93;
s/v-29/
M89-1145/RST
HA 100B
BUK436-100A
BUK436-100B
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PDF
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BUK9529-100B
Abstract: BUK9629-100B
Text: BUK95/9629-100B TrenchMOS logic level FET Rev. 01 — 18 April 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.
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BUK95/9629-100B
BUK9529-100B
O-220AB)
BUK9629-100B
OT404
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PDF
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BUK555-100B
Abstract: BUK555-100A BUK555 BUK555 100a T0220AB
Text: Philips Components BUK555'100A BUK555-100B PowerMOS transistor Logic Level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effed power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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OCR Scan
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BUK555-100A
BUK555-100B
BUK555
-100A
-100B
/V-20
M89-1164/RC
BUK555-100B
BUK555-100A
BUK555 100a
T0220AB
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PDF
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PSMN015-100B
Abstract: PSMN015-100P SOT404
Text: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES PSMN015-100B, PSMN015-100P SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance d VDSS = 100 V
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Original
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PSMN015-100B,
PSMN015-100P
PSMN015-100P
O220AB)
PSMN015-100B
OT404
SOT404
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PDF
|
|
|
PSMN015-100B
Abstract: PSMN015-100P transistor 100p
Text: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES PSMN015-100B, PSMN015-100P SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance d VDSS = 100 V
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Original
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PSMN015-100B,
PSMN015-100P
PSMN015-100P
O220AB)
PSMN015-100B
OT404
transistor 100p
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PDF
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Untitled
Abstract: No abstract text available
Text: TO -22 AB BUK7526-100B N-channel TrenchMOS standard level FET 30 January 2014 Product data sheet 1. General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to
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Original
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BUK7526-100B
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PDF
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BUK7526-100B
Abstract: BUK7626-100B
Text: BUK75/7626-100B TrenchMOS standard level FET Rev. 01 — 11 April 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.
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Original
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BUK75/7626-100B
BUK7526-100B
O-220AB)
BUK7626-100B
OT404
|
PDF
|
03ng60
Abstract: No abstract text available
Text: BUK95/9610-100B TrenchMOS logic level FET Rev. 02 — 8 October 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology.
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Original
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BUK95/9610-100B
BUK9510-100B
O-220AB)
BUK9610-100B
OT404
03ng60
|
PDF
|
TOPFET high side switch
Abstract: No abstract text available
Text: BUK7Y53-100B N-channel TrenchMOS standard level FET Rev. 3 — 13 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This
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Original
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BUK7Y53-100B
TOPFET high side switch
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PDF
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Untitled
Abstract: No abstract text available
Text: BUK7Y53-100B N-channel TrenchMOS standard level FET Rev. 3 — 13 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This
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Original
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BUK7Y53-100B
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PDF
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NEC varistor
Abstract: varistor nec NEC DIODES
Text: NSAD500 SERIES The NSAD500 series is a super low capacitance device for ESD noise protection in 100 to 500 Mbps class data line USB2.0, IEEE1394, 100B, etc. . Based on the IEC 61000-4-2 test on electromagnetic interference (EMI), the NSAD500 series assures an
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NSAD500
IEEE1394,
D18006EJ2V1PF00
NEC varistor
varistor nec
NEC DIODES
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PDF
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Untitled
Abstract: No abstract text available
Text: BUK75/7610-100B TrenchMOS standard level FET Rev. 01 — 09 April 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using generation three TrenchMOS™ technology, featuring very low on-state resistance.
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Original
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BUK75/7610-100B
BUK7510-100B
O-220AB)
BUK7610-100B
OT404
|
PDF
|
BUK9230-100B
Abstract: No abstract text available
Text: BUK9230-100B TrenchMOS logic level FET Rev. 01 — 22 January 2004 M3D300 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.
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Original
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BUK9230-100B
M3D300
OT428
BUK9230-100B
|
PDF
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12232
Abstract: BUK7227-100B
Text: BUK7227-100B TrenchMOS standard level FET Rev. 01 — 26 January 2004 M3D300 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.
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Original
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BUK7227-100B
M3D300
OT428
12232
BUK7227-100B
|
PDF
|
