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Kyocera AVX Components 100B0R8BW1500XT MLC A/B/R - Custom Tape W/Leader (Alt: 100B0R8BW1500XT)
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Avnet Americas	100B0R8BW1500XT	Tape w/Leader		16 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
TTI	100B0R8BW1500XT	Reel	500		500	1 - 10 - 100 - 1000 $2.81 10000 $2.75	Buy Now
Kyocera AVX Components 100B0R8BW500XT1K MLC A/B/R - Custom Tape W/Leader (Alt: 100B0R8BW500XT1K)
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Avnet Americas	100B0R8BW500XT1K	Tape w/Leader		16 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B0R8BW500XT1K					1 - 10 - 100 - 1000 $2.04 10000 $2.04	Get Quote
Richardson RFPD	100B0R8BW500XT1K				1,000	1 - 10 - 100 - 1000 $2.14 10000 $1.55	Buy Now
Kyocera AVX Components 100B0R8BW500XT MLC A/B/R - Custom Tape W/Leader (Alt: 100B0R8BW500XT)
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Avnet Americas	100B0R8BW500XT	Tape w/Leader		16 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B0R8BW500XT					1 - 10 - 100 - 1000 $2.77 10000 $2.77	Get Quote
Richardson RFPD	100B0R8BW500XT				500	1 - 10 - 100 - 1000 $2.14 10000 $1.55	Buy Now
Kyocera AVX Components 100B0R8BW1500XTV MLC A/B/R - Custom Tape W/Leader (Alt: 100B0R8BW1500XTV)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	100B0R8BW1500XTV	Tape w/Leader		16 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B0R8BW1500XTV					1 - 10 - 100 - 1000 $2.85 10000 $2.85	Get Quote
Newark	100B0R8BW1500XTV	Bulk			500	1 - 10 - 100 - 1000 $5.42 10000 $5.42	Buy Now
TTI	100B0R8BW1500XTV	Reel			500	1 - 10 - 100 - 1000 $2.85 10000 $2.85	Buy Now
Kyocera AVX Components 100B0R8BW500XC100 MLC A/B/R - Waffle Pack (Alt: 100B0R8BW500XC100)
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Avnet Americas	100B0R8BW500XC100	Waffle Pack		16 Weeks	100	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B0R8BW500XC100					1 $6.44 10 $5.59 100 $3.55 1000 $3.55 10000 $3.55	Get Quote
TTI	100B0R8BW500XC100	WAFL			100	1 - 10 - 100 $3.26 1000 $3.26 10000 $3.26	Buy Now
Richardson RFPD	100B0R8BW500XC100				100	1 - 10 - 100 $3.46 1000 $2.1 10000 $1.52	Buy Now

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100B0R8BW Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF9080 Rev. 5, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large−signal, common−	Original	PDF	MRF9080 MRF9080LR3 MRF9080LSR3
100B0R1BW Abstract: 100A1R5BW A113 A114 A115 AN1955 C101 JESD22 MW6IC2015GNBR1 MW6IC2015NBR1 Text: Freescale Semiconductor Technical Data Document Number: MW6IC2015N Rev. 0, 2/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC2015N wideband integrated circuit is designed for base station applications. It uses Freescale’s newest High Voltage 26 to 32 Volts LDMOS	Original	PDF	MW6IC2015N MW6IC2015N MW6IC2015NBR1 MW6IC2015GNBR1 100B0R1BW 100A1R5BW A113 A114 A115 AN1955 C101 JESD22 MW6IC2015GNBR1
100B101JW Abstract: 232272461009 465B A114 A115 AN1955 JESD22 MRF7S18170H MRF7S18170HR3 MRF7S18170HSR3 Text: Freescale Semiconductor Technical Data Document Number: MRF7S18170H Rev. 0, 10/2006 RF Power Field Effect Transistors MRF7S18170HR3 MRF7S18170HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1805 to	Original	PDF	MRF7S18170H MRF7S18170HR3 MRF7S18170HSR3 MRF7S18170HR3 DataMRF7S18170H 100B101JW 232272461009 465B A114 A115 AN1955 JESD22 MRF7S18170H MRF7S18170HSR3
J294 Abstract: 200B104MW 465B A114 A115 AN1955 JESD22 MRF7S19170HR3 MRF7S19170HSR3 MRF7S19170HS Text: Freescale Semiconductor Technical Data Document Number: MRF7S19170H Rev. 0, 10/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S19170HR3 MRF7S19170HSR3 Designed for CDMA base station applications with frequencies from 1930 to	Original	PDF	MRF7S19170H MRF7S19170HR3 MRF7S19170HSR3 MRF7S19170HR3 DataMRF7S19170H J294 200B104MW 465B A114 A115 AN1955 JESD22 MRF7S19170HSR3 MRF7S19170HS
tl249 Abstract: tl2472 TL244 TRANSISTOR tl131 TL251 tl239 PTFB182503 PTFB182503FL tl250 TL242 Text: PTFB182503EL PTFB182503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier	Original	PDF	PTFB182503EL PTFB182503FL PTFB182503EL PTFB182503FL 240-watt H-33288-6, H-34288-6, tl249 tl2472 TL244 TRANSISTOR tl131 TL251 tl239 PTFB182503 tl250 TL242
marking WB1 sot-23 Abstract: marking WB2 sot-23 transistor WB1 Text: Document Number: MRF9080 Rev. 7, 10/2008 Freescale Semiconductor Technical Data RF Power Field Effect Transistor MRF9080LSR3 Designed for GSM 900 MHz frequency band, the high gain and broadband performance of this device make it ideal for large-signal, common-source	Original	PDF	MRF9080 MRF9080LSR3 marking WB1 sot-23 marking WB2 sot-23 transistor WB1
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF5S19060N Rev. 4, 8/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S19060NR1 MRF5S19060NBR1 MRF5S19060MR1 MRF5S19060MBR1 Designed for broadband commercial and industrial applications with	Original	PDF	MRF5S19060N MRF5S19060NR1 MRF5S19060NBR1 MRF5S19060MR1 MRF5S19060MBR1 MRF5S19060N
MRF6S21140HSR3 Abstract: J932 Text: Freescale Semiconductor Technical Data Rev. 2, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L	Original	PDF	MRF6S21140HR3 MRF6S21140HSR3 J932
0805 capacitor 10 pf Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Rev. 5, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large - signal, common source amplifier applications in 26 volt base station equipment.	Original	PDF	MRF9080LR3 MRF9080LSR3 0805 capacitor 10 pf
MRF9080LSR3 Abstract: 293D106X9035D2T MRF9080LR3 100B0R8BW Micron Semiconductor C1522 Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF9080/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line MRF9080LR3 MRF9080LSR3 RF Power Field Effect Transistors Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs	Original	PDF	MRF9080/D MRF9080LR3 MRF9080LSR3 MRF9080LR3 MRF9080LSR3 293D106X9035D2T 100B0R8BW Micron Semiconductor C1522
A113 Abstract: AN1955 MRF5S19060MBR1 MRF5S19060MR1 MRF5S19060NBR1 MRF5S19060NR1 Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S19060N/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S19060NR1 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs MRF5S19060NBR1	Original	PDF	MRF5S19060N/D MRF5S19060NR1 MRF5S19060NBR1 MRF5S19060NR1 MRF5S19060NBR1 MRF5S19060MR1 MRF5S19060MBR1 A113 AN1955 MRF5S19060MBR1
gsm signal amplifier Abstract: 500 watts amplifier schematic diagram A113 A114 A115 AN1955 C101 JESD22 MW6IC2015GNBR1 MW6IC2015NBR1 Text: Freescale Semiconductor Technical Data Document Number: MW6IC2015N Rev. 1, 5/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC2015N wideband integrated circuit is designed for base station applications. It uses Freescale’s newest High Voltage 26 to 32 Volts LDMOS	Original	PDF	MW6IC2015N MW6IC2015N MW6IC2015NBR1 MW6IC2015GNBR1 gsm signal amplifier 500 watts amplifier schematic diagram A113 A114 A115 AN1955 C101 JESD22 MW6IC2015GNBR1
IM324 Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF5S19060N Rev. 4, 8/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S19060NR1 MRF5S19060NBR1 MRF5S19060MR1 MRF5S19060MBR1 Designed for broadband commercial and industrial applications with	Original	PDF	MRF5S19060N MRF5S19060NR1 MRF5S19060NBR1 MRF5S19060MR1 MRF5S19060MBR1 MRF5S19060N IM324
2a258 transistor Abstract: Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index Text: Device Data Book WIRELESS RF PRODUCT DEVICE DATA ireless DL110/D Rev. 13 3/2002 2.5G 3G Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii	Original	PDF	DL110/D 2a258 transistor Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index

733W Abstract: No abstract text available Text: MOTOROLA Order this document by MRF5S19060N/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S19060NR1 Designed for broadband commercial and industrial applications with	Original	PDF	MRF5S19060N/D MRF5S19060NR1 MRF5S19060NBR1 733W
465B Abstract: A114 AN1955 JESD22 MRF6S21140H MRF6S21140HR3 MRF6S21140HSR3 Text: Freescale Semiconductor Technical Data MRF6S21140H Rev. 2, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L	Original	PDF	MRF6S21140H MRF6S21140HR3 MRF6S21140HSR3 465B A114 AN1955 JESD22 MRF6S21140H MRF6S21140HSR3
100B1R0BW Abstract: A113 A114 A115 AN1955 C101 JESD22 MRF5S19060MBR1 MRF5S19060MR1 Text: Freescale Semiconductor Technical Data Document Number: MRF5S19060M Rev. 5, 5/2006 Replaced by MRF5S19060NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.	Original	PDF	MRF5S19060M MRF5S19060NR1/NBR1. MRF5S19060MR1 MRF5S19060MBR1 MRF5S19060MR1 100B1R0BW A113 A114 A115 AN1955 C101 JESD22 MRF5S19060MBR1
marking WB1 sot-23 Abstract: marking WB2 sot-23 293D106X9035D2T MRF9080 MRF9080LR3 MRF9080LSR3 Text: Freescale Semiconductor Technical Data Document Number: MRF9080 Rev. 6, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9080LR3 MRF9080LSR3 Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large - signal, common source amplifier applications in 26 volt base station equipment.	Original	PDF	MRF9080 MRF9080LR3 MRF9080LSR3 MRF9080LR3 marking WB1 sot-23 marking WB2 sot-23 293D106X9035D2T MRF9080 MRF9080LSR3
733W Abstract: A113 A114 A115 AN1955 C101 JESD22 MRF5S19060N MRF5S19060NBR1 MRF5S19060NR1 Text: Freescale Semiconductor Technical Data Document Number: MRF5S19060N Rev. 6, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S19060NR1 MRF5S19060NBR1 Designed for broadband commercial and industrial applications with	Original	PDF	MRF5S19060N MRF5S19060NR1 MRF5S19060NBR1 MRF5S19060NR1 733W A113 A114 A115 AN1955 C101 JESD22 MRF5S19060N MRF5S19060NBR1
WB1 SOT23 Abstract: transistor WB1 100B100JW TLX8-0300 capacitor 30 mf WB2 SOT23 08053G105ZATEA 100B4R7BW Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband	Original	PDF	MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3 WB1 SOT23 transistor WB1 100B100JW TLX8-0300 capacitor 30 mf WB2 SOT23 08053G105ZATEA 100B4R7BW
u1 voltage regulator Abstract: MRF9080 MRF9080LSR3 MRF9080R3 MRF9080SR3 Text: MOTOROLA Order this document by MRF9080/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband	Original	PDF	MRF9080/D MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3 MRF9080 MRF9080R3 MRF9080SR3MRF9080LSR3 u1 voltage regulator MRF9080LSR3 MRF9080SR3
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF5S19060M Rev. 5, 5/2006 Replaced by MRF5S19060NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.	Original	PDF	MRF5S19060M MRF5S19060NR1/NBR1. MRF5S19060MR1 MRF5S19060MBR1 MRF5S19060MR1
marking WB1 sot-23 Abstract: marking WB2 sot-23 WB1 SOT23 R125510 WB1 MARKING SOT-23 sot-23 wb2 Text: Freescale Semiconductor Technical Data MRF9080 Rev. 5, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large−signal, common−	Original	PDF	MRF9080 MRF9080LR3 MRF9080LSR3 marking WB1 sot-23 marking WB2 sot-23 WB1 SOT23 R125510 WB1 MARKING SOT-23 sot-23 wb2
marking WB1 sot-23 Abstract: WB1 SOT23 WB1 MARKING SOT-23 marking WB2 sot-23 Text: Freescale Semiconductor Technical Data MRF9080 Rev. 5, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large−signal, common−	Original	PDF	MRF9080 MRF9080LR3 MRF9080LSR3 marking WB1 sot-23 WB1 SOT23 WB1 MARKING SOT-23 marking WB2 sot-23

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Kyocera AVX Components 100B0R8BW1500XT

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Kyocera AVX Components 100B0R8BW500XT

Kyocera AVX Components 100B0R8BW1500XTV

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100B0R8BW Datasheets Context Search

Untitled

100B0R1BW

100B101JW

J294

tl249

marking WB1 sot-23

Untitled

MRF6S21140HSR3

0805 capacitor 10 pf

MRF9080LSR3

A113

gsm signal amplifier

IM324

2a258 transistor

733W

465B

100B1R0BW

marking WB1 sot-23

733W

WB1 SOT23

u1 voltage regulator

Untitled

marking WB1 sot-23

marking WB1 sot-23