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Kyocera AVX Components 100B470JW500XT1K CAP CER 47PF 500V P90 1111
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	100B470JW500XT1K	Digi-Reel	1,203		1	1 $7.09 10 $4.873 100 $3.6943 1000 $3.6943 10000 $3.6943	Buy Now
	100B470JW500XT1K	Cut Tape	1,203		1	1 $7.09 10 $4.873 100 $3.6943 1000 $3.6943 10000 $3.6943	Buy Now
	100B470JW500XT1K	Reel	500		500	1 - 10 - 100 - 1000 $3.06923 10000 $2.90871	Buy Now
Avnet Americas	100B470JW500XT1K	Tape w/Leader		16 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B470JW500XT1K					1 - 10 - 100 - 1000 $2.82 10000 $2.75	Get Quote
Richardson RFPD	100B470JW500XT1K				1,000	1 - 10 - 100 - 1000 $2.42 10000 $2.14	Buy Now
Kyocera AVX Components 100B470JW500XT MLC A/B/R - Custom Tape W/Leader (Alt: 100B470JW500XT)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	100B470JW500XT	Tape w/Leader		16 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B470JW500XT		1,560			1 $4.94 10 $4.25 100 $3.19 1000 $2.57 10000 $2.52	Buy Now
TTI	100B470JW500XT	Reel			500	1 - 10 - 100 - 1000 $2.54 10000 $2.49	Buy Now
Richardson RFPD	100B470JW500XT				500	1 - 10 - 100 - 1000 $2.42 10000 $2.14	Buy Now
Kyocera AVX Components 100B470JW500XC100 MLC A/B/R - Waffle Pack (Alt: 100B470JW500XC100)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	100B470JW500XC100	Waffle Pack		16 Weeks	100	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B470JW500XC100					1 $5.38 10 $4.64 100 $3.05 1000 $3.05 10000 $3.05	Get Quote
TTI	100B470JW500XC100	WAFL			100	1 - 10 - 100 $3.02 1000 $3.02 10000 $3.02	Buy Now
Richardson RFPD	100B470JW500XC100		500		200	1 - 10 - 100 - 1000 $2.42 10000 $2.14	Buy Now
Kyocera AVX Components 100B470JW500XTV MLC A/B/R - Bulk (Alt: 100B470JW500XTV)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	100B470JW500XTV	Bulk		16 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B470JW500XTV					1 - 10 - 100 - 1000 $2.81 10000 $2.81	Get Quote
Kyocera AVX Components 100B470JW500XTV1K Silicon RF Capacitors / Thin Film MLC A/B/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	100B470JW500XTV1K					1 - 10 - 100 - 1000 $2.3 10000 $2.3	Get Quote

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100B470JW500X Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
100B470JW500XT		American Technical Ceramics	Capacitors - Ceramic Capacitors - CAP CER 47PF 500V P90 1111		Original	PDF
100B470JW500XT1K		American Technical Ceramics	Ceramic Capacitor 47PF 500V P90 1111		Original	PDF

100B470JW500X Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
mosfet 1412 Abstract: No abstract text available Text: Draft Copy Only Preliminary Data Sheet September 2003 AGR09090EF 90 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced	Original	AGR09090EF Hz--960 DS03-202RFPP mosfet 1412	PDF
Untitled Abstract: No abstract text available Text: Preliminary Data Sheet October 2003 AGR09070EF 70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09070EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced	Original	AGR09070EF Hz--960 AGR09070EF DS04-007RFPP DS03-059RFPP)	PDF
100B100JW500X Abstract: AGR09090EF JESD22-C101A Text: Preliminary Data Sheet November 2003 AGR09090EF 90 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced	Original	AGR09090EF Hz--960 AGR09090EF DS04-058RFPP DS04-029RFPP) 100B100JW500X JESD22-C101A	PDF
C20 CT Abstract: 100B220 sprague CT series Text: AGR09070EF 70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09070EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced	Original	AGR09070EF Hz--960 AGR09070EF DS04-057RFPP DS04-027RFPP) C20 CT 100B220 sprague CT series	PDF
Untitled Abstract: No abstract text available Text: Preliminary Data Sheet April 2004 AGR09090EF 90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution	Original	AGR09090EF Hz--960 DS04-134RFPP DS04-068RFPP)	PDF
Johanson Technology Abstract: No abstract text available Text: Preliminary Data Sheet November 2003 AGR09090EF 90 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced	Original	AGR09090EF Hz--960 DS04-029RFPP DS04-005RFPP) Johanson Technology	PDF
926 sprague Abstract: No abstract text available Text: Preliminary Data Sheet November 2003 AGR09070EF 70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09070EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced	Original	AGR09070EF Hz--960 AGR09070EF DS04-057RFPP DS04-027RFPP) 926 sprague	PDF
Untitled Abstract: No abstract text available Text: Preliminary Data Sheet November 2003 AGR09070EF 70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09070EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced	Original	AGR09070EF Hz--960 AGR09070EF DS04-027RFPP DS04-007RFPP)	PDF
Untitled Abstract: No abstract text available Text: Preliminary Data Sheet July 2003 AGR09070EF 70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09070EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced	Original	AGR09070EF Hz--960 AGR09070EF DS03-059RFPP DS03-011RFPP)	PDF
J083 Abstract: No abstract text available Text: Preliminary Data Sheet January 2003 AGR09070EF 70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09070EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced	Original	AGR09070EF Hz--960 AGR09070EF DS03-011RFPP DS02-221RFPP) J083	PDF
TB185 Abstract: No abstract text available Text: February 1, 2012 TB185 Frequency=290-320MHz Pout=200W Gain=16dB Vds=28Vdc Idq=1.2A LR301 PH : 805 484-4210 FAX :( 805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com February 1, 2012 TB185 Gain/Efficiency vs Frequency: Vds=28Vdc, Idq=1.2A, Pout=250W	Original	TB185 290-320MHz 28Vdc LR301 TB185 28Vdc, 300Mhz 100B130JW500X	PDF
100B100JW500X Abstract: AGR09070EF JESD22-C101A 100B100JW500 Text: Preliminary Data Sheet April 2004 AGR09070EF 70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09070EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced	Original	AGR09070EF Hz--960 AGR09070EF DS04-151RFPP DS04-057RFPP) 100B100JW500X JESD22-C101A 100B100JW500	PDF
AGR09090EF Abstract: JESD22-C101A ZX18 grm40x7r103k100al Text: Preliminary Data Sheet April 2004 AGR09090EF 90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution	Original	AGR09090EF Hz--960 AGR09090EF DS04-153RFPP DS04-134RFPP) JESD22-C101A ZX18 grm40x7r103k100al	PDF
100B100JW500X Abstract: No abstract text available Text: AGR09090EF 90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution	Original	AGR09090EF Hz--960 Hz--895 DS04-134RFPP DS04-068RFPP) 100B100JW500X	PDF

Untitled Abstract: No abstract text available Text: Preliminary Data Sheet December 2003 AGR09090EF 90 W, 921 MHz—960 MHz, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution	Original	AGR09090EF Hz--960 Hz--895 Therma10-12, DS04-064RFPP DS04-058RFPP)	PDF
j0947 Abstract: AGR09090EF JESD22-C101A ZX18 ZO 109 wa 100B100JW500X Text: AGR09090EF 90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution	Original	AGR09090EF Hz--960 AGR09090EF Typic14 Hz--895 j0947 JESD22-C101A ZX18 ZO 109 wa 100B100JW500X	PDF
100B100JW500X Abstract: AGR09070EF JESD22-C101A grm40x7r103k100al Text: AGR09070EF 70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09070EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced	Original	AGR09070EF Hz--960 AGR09070EF perform26 100B100JW500X JESD22-C101A grm40x7r103k100al	PDF
Untitled Abstract: No abstract text available Text: Preliminary Data Sheet October 2003 AGR09090EF 90 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced	Original	AGR09090EF Hz--960 T210-12, DS04-005RFPP DS03-202RFPP)	PDF

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100B470JW500X Price and Stock

Kyocera AVX Components 100B470JW500XT1K

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Kyocera AVX Components 100B470JW500XTV1K

100B470JW500X Datasheets (2)

100B470JW500X Datasheets Context Search

mosfet 1412

Untitled

100B100JW500X

C20 CT

Untitled

Johanson Technology

926 sprague

Untitled

Untitled

J083

TB185

100B100JW500X

AGR09090EF

100B100JW500X

Untitled

j0947

100B100JW500X

Untitled