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Kyocera AVX Components 100B510JCA500XC100 MLC A/B/R - Waffle Pack (Alt: 100B510JCA500XC100)
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Avnet Americas	100B510JCA500XC100	Waffle Pack		16 Weeks	100	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B510JCA500XC100					1 $7.28 10 $6.31 100 $5.02 1000 $4.58 10000 $4.58	Get Quote
Richardson RFPD	100B510JCA500XC100				100	1 - 10 - 100 $4.03 1000 $3.62 10000 $3.22	Buy Now
Kyocera AVX Components 100B510JCA500XT MLC A/B/R - Custom Tape W/Leader (Alt: 100B510JCA500XT)
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Avnet Americas	100B510JCA500XT	Tape w/Leader		16 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B510JCA500XT					1 - 10 - 100 - 1000 $4.55 10000 $4.55	Get Quote
Kyocera AVX Components 100B510JCA500XT1K Silicon RF Capacitors / Thin Film MLC A/B/R
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Mouser Electronics	100B510JCA500XT1K					1 - 10 - 100 - 1000 $3.42 10000 $3.42	Get Quote

100B510JC Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF284 Rev. 15, 12/2004 RF Power Field Effect Transistors MRF284LR1 MRF284LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier	Original	MRF284 MRF284LR1 MRF284LSR1	PDF
MRF19085 Abstract: CDR33BX104AKWS GX-0300-55-22 MRF19085LSR3 MRF19085R3 MRF19085SR3 100B5R1 Text: MOTOROLA Order this document by MRF19085/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF19085 MRF19085R3 MRF19085SR3 MRF19085LSR3 N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from	Original	MRF19085/D MRF19085 MRF19085R3 MRF19085SR3 MRF19085LSR3 MRF19085 MRF19085R3 MRF19085SR3 CDR33BX104AKWS GX-0300-55-22 MRF19085LSR3 100B5R1	PDF
465B Abstract: CDR33BX104AKWS MRF19125 MRF19125S MRF19125SR3 Text: MOTOROLA Order this document by MRF19125/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF19125 MRF19125S MRF19125SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from	Original	MRF19125/D MRF19125 MRF19125S MRF19125SR3 MRF19125 MRF19125S 465B CDR33BX104AKWS MRF19125SR3	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF284 Rev. 16, 5/2005 RF Power Field Effect Transistors MRF284LR1 MRF284LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier	Original	MRF284 MRF284LR1 MRF284LSR1 MRF284	PDF
ferroxcube for ferrite beads Abstract: MRF282 Text: Freescale Semiconductor Technical Data Document Number: MRF282 Rev. 14, 5/2005 RF Power Field Effect Transistors MRF282SR1 MRF282ZR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and	Original	MRF282 MRF282SR1 MRF282ZR1 MRF282 ferroxcube for ferrite beads	PDF
GX03005522 Abstract: 200S CDR33BX104AKWS MRF282SR1 MRF282ZR1 GX0300-55-22 MRF282 Text: Freescale Semiconductor, Inc. MOTOROLA Order this document by MRF282/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF282SR1 MRF282ZR1 RF Power Field Effect Transistors Freescale Semiconductor, Inc. N–Channel Enhancement–Mode Lateral MOSFETs	Original	MRF282/D MRF282SR1 MRF282ZR1 MRF282SR1 GX03005522 200S CDR33BX104AKWS MRF282ZR1 GX0300-55-22 MRF282	PDF
ATC 100C Abstract: CDR33BX104AKWS MRF284R1 MRF284SR1 C10 PH mallory 150 series Text: MOTOROLA Order this document by MRF284/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF284R1 MRF284SR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from	Original	MRF284/D MRF284R1 MRF284SR1 MRF284R1 ATC 100C CDR33BX104AKWS MRF284SR1 C10 PH mallory 150 series	PDF
ferroxcube ferrite beads Abstract: C18 ph MJD320 ferroxcube for ferrite beads Semiconductor 1346 transistor MALLORY VARIABLE CAPACITORS MRF282 100b*500x MRF282ZR1 RESISTOR AXIAL 0414 Text: Freescale Semiconductor Technical Data Document Number: MRF282 Rev. 15, 5/2006 RF Power Field Effect Transistors MRF282SR1 MRF282ZR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and	Original	MRF282 MRF282SR1 MRF282ZR1 MRF282SR1 ferroxcube ferrite beads C18 ph MJD320 ferroxcube for ferrite beads Semiconductor 1346 transistor MALLORY VARIABLE CAPACITORS MRF282 100b*500x MRF282ZR1 RESISTOR AXIAL 0414	PDF
MRF284 Abstract: wirewound resistor j10 CDR33BX104AKWS MRF284SR1 mrf284 power C10 PH Text: MOTOROLA Order this document by MRF284/D SEMICONDUCTOR TECHNICAL DATA MRF284 MRF284SR1 The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from	Original	MRF284/D MRF284 MRF284SR1 MRF284 wirewound resistor j10 CDR33BX104AKWS MRF284SR1 mrf284 power C10 PH	PDF
imd 5210 Abstract: MJD310 RE65G1R00 MJD320 MALLORY VARIABLE CAPACITORS GX-0300-55-22 Arlon transistor z9 GX0300 27291SL Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF282SR1 MRF282ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and	Original	MRF282SR1 MRF282ZR1 imd 5210 MJD310 RE65G1R00 MJD320 MALLORY VARIABLE CAPACITORS GX-0300-55-22 Arlon transistor z9 GX0300 27291SL	PDF
100B270JCA500X Abstract: 100B390JCA500X 100B201JCA500X GX03005522 MRF282 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF282SR1 MRF282ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and	Original	MRF282SR1 MRF282ZR1 100B270JCA500X 100B390JCA500X 100B201JCA500X GX03005522 MRF282	PDF
C10 PH Abstract: 56-590-65-3B 369A-10 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF284 MRF284SR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier	Original	MRF284 MRF284SR1 C10 PH 56-590-65-3B 369A-10	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF19125 Rev. 6, 4/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF19125R3 MRF19125SR3 Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier	Original	MRF19125 MRF19125R3 MRF19125SR3	PDF
MRF19085 Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF19085 Rev. 7, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF19085LR3 MRF19085LSR3 Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier	Original	MRF19085 MRF19085LR3 MRF19085LSR3	PDF

K 3569 7.G equivalent Abstract: 369A-10 CDR33BX104AKWS MRF284R1 567 tone MJD32 MOTOROLA MRF284LSR1 RE60G1R00 T495X106K035AS4394 5659065-3B Text: MOTOROLA Order this document by MRF284/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF284R1 MRF284LSR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from	Original	MRF284/D MRF284R1 MRF284LSR1 MRF284R1 K 3569 7.G equivalent 369A-10 CDR33BX104AKWS 567 tone MJD32 MOTOROLA MRF284LSR1 RE60G1R00 T495X106K035AS4394 5659065-3B	PDF
2a258 transistor Abstract: Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index Text: Device Data Book WIRELESS RF PRODUCT DEVICE DATA ireless DL110/D Rev. 13 3/2002 2.5G 3G Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii	Original	DL110/D 2a258 transistor Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF19125 Rev. 7, 10/2008 RF Power Field Effect Transistor MRF19125SR3 Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier	Original	MRF19125 MRF19125SR3 MRF19125	PDF
369A-10 Abstract: C10 PH dale 2000 2x12 mallory capacitor 1500 mf Text: MOTOROLA Order this document by MRF284/D SEMICONDUCTOR TECHNICAL DATA MRF284 MRF284SR1 The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from	Original	MRF284/D MRF284 MRF284SR1 DEVICEMRF284/D 369A-10 C10 PH dale 2000 2x12 mallory capacitor 1500 mf	PDF
mrf284 Abstract: C10 PH Text: MOTOROLA Order this document by MRF284/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF284 MRF284SR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from	Original	MRF284/D MRF284 MRF284SR1 MRF284/D C10 PH	PDF
MRF19085 Abstract: AN1955 CDR33BX104AKWS GX-0300-55-22 MRF19085LR3 MRF19085LSR3 Text: Freescale Semiconductor Technical Data Document Number: MRF19085 Rev. 8, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF19085LR3 MRF19085LSR3 Designed for PCN and PCS base station applications with frequencies from	Original	MRF19085 MRF19085LR3 MRF19085LSR3 MRF19085LR3 MRF19085 AN1955 CDR33BX104AKWS GX-0300-55-22 MRF19085LSR3	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Rev. 5, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF19125R3 MRF19125LR3 Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier	Original	MRF19125R3 MRF19125LR3	PDF
RE65G1R00 Abstract: 56-590-65/3B ferroxcube ferrite beads CDR33BX104AKWS MRF282SR1 MRF282ZR1 Arlon mjd310 MRF282 Text: MOTOROLA Order this document by MRF282/D SEMICONDUCTOR TECHNICAL DATA MRF282SR1 MRF282ZR1 The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at	Original	MRF282/D MRF282SR1 MRF282ZR1 MRF282SR1 RE65G1R00 56-590-65/3B ferroxcube ferrite beads CDR33BX104AKWS MRF282ZR1 Arlon mjd310 MRF282	PDF
Motorola transistors MRF 947 Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that	OCR Scan	2PHX11136Q-17 Motorola transistors MRF 947 trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN S ilico n RF Pow er lY a n sisto rs . . . d e s ig n e d fo r 12.5 V olt U HF la rg e -s ig n a l, c o m m o n -e m itte r a m p lifie r applications in industrial and com mercial FM equipm ent operating in the range	OCR Scan	56-590-65/3B MA20470B) 100B510JC500) MRF839F	PDF

100B510JC Search Results

100B510JC Price and Stock

Kyocera AVX Components 100B510JCA500XC100

Kyocera AVX Components 100B510JCA500XT

Kyocera AVX Components 100B510JCA500XT1K

100B510JC Datasheets Context Search

Untitled

MRF19085

465B

Untitled

ferroxcube for ferrite beads

GX03005522

ATC 100C

ferroxcube ferrite beads

MRF284

imd 5210

100B270JCA500X

C10 PH

Untitled

MRF19085

K 3569 7.G equivalent

2a258 transistor

Untitled

369A-10

mrf284

MRF19085

Untitled

RE65G1R00

Motorola transistors MRF 947

Untitled