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Microchip Technology Inc APA150-TQG100I-B1 APA150-TQG100I-B1, LQFP, Projected EOL: 2049-11-09
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Microchip Technology Inc	APA150-TQG100I-B1	Tray		28 Weeks		1 - 10 - 100 - 1000 - 10000 -	Buy Now
Microchip Technology Inc A3PN250-VQ100I-B1 A3PN250-VQ100I-B1, TQFP, Projected EOL: 2049-11-09
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Microchip Technology Inc	A3PN250-VQ100I-B1	Tray		28 Weeks		1 - 10 - 100 - 1000 - 10000 -	Buy Now
Microchip Technology Inc APA075-TQG100I-B1 APA075-TQG100I-B1, LQFP, Projected EOL: 2049-11-09
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Microchip Technology Inc	APA075-TQG100I-B1	Tray		28 Weeks		1 - 10 - 100 - 1000 - 10000 -	Buy Now
Microchip Technology Inc A3PN060-VQ100I-B1 A3PN060-VQ100I-B1, TQFP, Projected EOL: 2049-11-09
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Microchip Technology Inc	A3PN060-VQ100I-B1	Tray		28 Weeks		1 - 10 - 100 - 1000 - 10000 -	Buy Now
Microchip Technology Inc A3PN125-VQG100I-B1 A3PN125-VQG100I-B1, TQFP, Projected EOL: 2049-11-09
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Microchip Technology Inc	A3PN125-VQG100I-B1	Tray		28 Weeks		1 - 10 - 100 - 1000 - 10000 -	Buy Now

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100IB1 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2SC4390 Abstract: ITR06668 ITR06669 VEBO-15V Text: 2SC4390 Ordering number : EN2958B SANYO Semiconductors DATA SHEET 2SC4390 NPN Epitaxial Planar Silicon Transistor High hFE, AF Amplifier Applications Features • • • • • Adoption of MBIT process. High DC current gain hFE=800 to 3200 . Large current capacity (IC=2A).	Original	PDF	2SC4390 EN2958B VEBO15V) 2SC4390 ITR06668 ITR06669 VEBO-15V
Untitled Abstract: No abstract text available Text: NTE2505 Silicon NPN Transistor Low Frequency, General Purpose Amp Features: D High Current Capacity D High DC Current Gain D Low Collector Emitter Saturation Voltage D High Emitter Base Breakdown Voltage Absolute Maximum Ratings: TA = +25°C unless otherwise specified	Original	PDF	NTE2505 100IB1 100IB2 700mA,
2SC4204 Abstract: ITR06479 ITR06480 ITR06481 Text: Ordering number:ENN2531A NPN Epitaxial Planar Silicon Transistor 2SC4204 High-hFE, AF Amplifier Applications Applications Package Dimensions • AF amplifier, various drivers. unit:mm 2003B Features [2SC4204] 5.0 4.0 4.0 5.0 · Adoption of MBIT process. · High DC current gain hFE=800 to 3200 .	Original	PDF	ENN2531A 2SC4204 2003B 2SC4204] VEBO15V) 2SC4204 ITR06479 ITR06480 ITR06481
VEBO-15V Abstract: 2SC4736 ITR07504 ITR07505 Text: 2SC4736 Ordering number : EN3975A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC4736 High hFE, Low-Frequency General-Purpose Amplifier Applications Features • • • • • • • • Large current IC=2A . Adoption of MBIT process.	Original	PDF	2SC4736 EN3975A VEBO15V) VEBO-15V 2SC4736 ITR07504 ITR07505
2SC5069 Abstract: ITR07888 ITR07889 ITR07890 Text: Ordering number:ENN4509 NPN Epitaxial Planar Silicon Transistor 2SC5069 Low-Frequency General-Purpose Amplifier, Driver Applications Features Package Dimensions unit:mm 2038A [2SC5069] 4.5 1.6 1.5 0.4 1.0 2.5 4.25max • High current capacity. · Adoption of MBIT process.	Original	PDF	ENN4509 2SC5069 2SC5069] 25max 2SC5069 ITR07888 ITR07889 ITR07890
2SC5060 Abstract: 2SC5060 equivalent Text: 2SC5060 Transistors Power transistor 90±10V, 3A 2SC5060 zExternal dimensions (Unit : mm) zFeatures 1) Built-in zener diode between collector and base. 2) Zener diode has low voltage dispersion. 3) Strong protection against reverse power surges due to “L”	Original	PDF	2SC5060 65Max. 2SC5060 2SC5060 equivalent
Untitled Abstract: No abstract text available Text: Ordering number:ENN3975 NPN Epitaxial Planar Silicon Transistor 2SC4736 High hFE, Low-Frequency General-Purpose Amplifier Applications Package Dimensions unit:mm 2084B [2SC4736] 4.5 1.9 10.5 2.6 1.4 8.5 1.2 1.0 • Large current IC=2A . · Adoption of MBIT process.	Original	PDF	ENN3975 2SC4736 VEBO15V) 2084B 2SC4736]
22505TN Abstract: 1A marking 2SC5069 ITR07888 Text: 2SC5069 Ordering number : EN4509A SANYO Semiconductors DATA SHEET 2SC5069 NPN Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amplifier, Driver Applications Features • • • • • High current capacity. Adoption of MBIT process. High DC current gain.	Original	PDF	2SC5069 EN4509A 22505TN 1A marking 2SC5069 ITR07888
2SC4480 Abstract: ITR07096 ITR07097 ITR07098 ITR07099 Text: Ordering number:ENN3234 NPN Epitaxial Planar Silicon Transistor 2SC4480 Low-Frequency General-Purpose Amplifier, General Driver Applications Features Package Dimensions • Large current capacity. · Adoption of MBIT process. · High DC current gain. · Low collector-to-emitter saturation voltage.	Original	PDF	ENN3234 2SC4480 2SC4480] 2SC4480 ITR07096 ITR07097 ITR07098 ITR07099
2SC4390 Abstract: ITR06668 ITR06669 ITR06670 ITR06671 Text: Ordering number:ENN2958A NPN Epitaxial Planar Silicon Transistor 2SC4390 High-hFE, AF Amplifier Applications Features Package Dimensions unit:mm 2038A [2SC4390] 4.5 1.6 1.5 0.4 1.0 2.5 4.25max • Adoption of MBIT process. · High DC current gain hFE=800 to 3200 .	Original	PDF	ENN2958A 2SC4390 2SC4390] 25max VEBO15V) 2SC4390 ITR06668 ITR06669 ITR06670 ITR06671
2SC5060 Abstract: 9010V Text: Power transistor 9010V, 3A 2SC5060 Dimensions (Unit : mm) Features 1) Built-in zener diode between collector and base. 2) Zener diode has low voltage dispersion. 3) Strong protection against reverse power surges due to “L” loads. 4) Darlington connection for high DC current gain.	Original	PDF	2SC5060 65Max. R0039A 2SC5060 9010V