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    100MHZ NPN TRANSISTORS Search Results

    100MHZ NPN TRANSISTORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    100MHZ NPN TRANSISTORS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F 3DA4793 Plastic-Encapsulate Transistors TO-220F TRANSISTOR NPN FEATURES . High Transition Frequency : fT=100MHZ(Typ) . Complementary to 3CA1837 . Collector Power Dissipation PCM : 2W (Tamb=25℃)


    Original     		PDF O-220F 3DA4793 100MHZ 3CA1837 100mA 500mA,

    100MHZ

    Abstract: 2SC2714 Marking qy
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC2714 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES z Small reverse Transfer Capacitance:Cre=0.7pF(typ.) z Low Noise Figure:NF=2.5dB(typ.) (f=100MHz) 3. COLLECTOR


    Original     		PDF OT-23 OT-23 2SC2714 100MHz) 100MHZ 100MHZ 2SC2714 Marking qy

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC2714 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES z Small reverse Transfer Capacitance:Cre=0.7pF(typ.) z Low Noise Figure:NF=2.5dB(typ.) (f=100MHz) 3. COLLECTOR


    Original     		PDF OT-23 OT-23 2SC2714 100MHz) 100MHZ

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENN3020 NPN Epitaxial Planar Silicon Transistors 2SC4399 High-Frequency General-Purpose Amplifier Applications Features Package Dimensions • High power gain : PG=25dB typ f=100MHz . · Ultrasmall-sized package permitting the 2SC4399applied sets to be made small and slim.


    Original     		PDF ENN3020 2SC4399 100MHz) 2SC4399applied 2059B 2SC4399] 2SC4399/D

    ZTX320

    Abstract: ZTX321 ZTX322 ZTX323 DSA003764
    Text: NPN SILICON PLANAR HIGH SPEED SWITCHING TRANSISTORS ZTX320 ZTX321 ZTX322 ZTX323 ISSUE 3 – APRIL 94 FEATURES * 15 Volt VCEO * fT=600 MHz APPLICATIONS * VHF/UHF operation TYPICAL CHARACTERISTICS 0.4 PD - Power Dissipation Watts 1000 fT - MHz 800 VCE=10V f=100MHz


    Original     		PDF ZTX320 ZTX321 ZTX322 ZTX323 100MHz ZTX320, ZTX321 ZTX323 DSA003764

    SMD 6v Transistor

    Abstract: 100MHZ NPN TRANSISTORS TRANSISTOR pc 135 2SC4399 100MHZ NPN TRANSISTORS smd
    Text: Transistors IC SMD Type NPN Epitaxial Planar Silicon Transistor 2SC4399 Features High power gain : PG=25dB typ f=100MHz . applied sets to be made small and slim. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage


    Original     		PDF 2SC4399 100MHz) 100MHz SMD 6v Transistor 100MHZ NPN TRANSISTORS TRANSISTOR pc 135 2SC4399 100MHZ NPN TRANSISTORS smd

    Untitled

    Abstract: No abstract text available
    Text: LS301 LS302 LS303 HIGH VOLTAGE SUPER-BETA MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES hFE ≥ 2000 @ 1.0µA TYP. VERY HIGH GAIN LOW OUTPUT CAPACITANCE COBO ≤2.0pF TIGHT VBE MATCHING |VBE1-VBE2| = 0.2mV TYP. HIGH fT 100MHz C1 ABSOLUTE MAXIMUM RATINGS NOTE 1


    Original     		PDF LS301 LS302 LS303 100MHz 250mW 500mW LS301ithic

    ic 4042

    Abstract: LS301 LS302 LS303
    Text: LS301 LS302 LS303 HIGH VOLTAGE SUPER-BETA MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES hFE ≥ 2000 @ 1.0µA TYP. VERY HIGH GAIN LOW OUTPUT CAPACITANCE COBO ≤2.0pF TIGHT VBE MATCHING |VBE1-VBE2| = 0.2mV TYP. HIGH fT 100MHz C1 ABSOLUTE MAXIMUM RATINGS NOTE 1


    Original     		PDF LS301 LS302 LS303 100MHz 250mW 500mW LS302: LS303: ic 4042 LS301 LS302 LS303

    2SC4793

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC4793 Features • • • NPN Silicon Transistors High Voltage: V BR CEO=230V High Transition Frequency: fT=100MHz(Typ.) Complementary to 2SA1837


    Original     		PDF 2SC4793 100MHz 2SA1837 O-220F 10mAdc, 10Vdc, 2SC4793

    2907A

    Abstract: 2222a npn 2907A 2222a NPN tr 2222a npn-pnp dual NPN, PNP for 500ma, 30v 2222A transistors 22222a transistor 2222a data sheet
    Text: MMDT2227DW NPN+PNP Dual General Purpose Transistors P b Lead Pb -Free 6 5 1 Features: * Complementary Pair * Epitaxial Planar Die Construction * Ultra-Small Surface Mount Package * One 2222A Type (NPN),One 2907A Type (PNP) * Ideal for Low Power Amplification and Switching


    Original     		PDF MMDT2227DW OT-363 SC-88) J-STD-020C MIL-STD-202, 06-Dec-07 OT-363 2907A 2222a npn 2907A 2222a NPN tr 2222a npn-pnp dual NPN, PNP for 500ma, 30v 2222A transistors 22222a transistor 2222a data sheet

    T6718

    Abstract: ZDT6718 FMMT618 FMMT718 DSA003725
    Text: SM-8 COMPLEMENTARY MEDIUM POWER HIGH GAIN TRANSISTORS ZDT6718 ISSUE 1 - NOVEMBER 1995 C1 B1 C1 E1 C2 B2 C2 E2 NPN PNP SM-8 8 LEAD SOT223 PARTMARKING DETAIL – T6718 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL NPN PNP UNIT Collector-Base Voltage VCBO 20 -20


    Original     		PDF ZDT6718 OT223) T6718 200mA, 100MHz FMMT618 -10mA, -100mA, -50mA, T6718 ZDT6718 FMMT718 DSA003725

    pnp and npn

    Abstract: BC847PN
    Text: BC847PN Complementary Transistor PNP and NPN SOT-363 Features — Epitaxial Die Construction — Two internal isolated NPN/PNP Transistors in one package MAKING: 7P MAXIMUM RATINGS TR1 (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage


    Original     		PDF BC847PN OT-363 -10mA -100mA 100MHz pnp and npn BC847PN

    Untitled

    Abstract: No abstract text available
    Text: BC847BVN Dual NPN+PNP Transistors Elektronische Bauelemente Plastic-Encapsulate Transistors SOT-563 RoHS Compliant Product FEATURES .002 0.05 .000(0.00) .051(1.30) .043(1.10) .012(0.30) .004(0.10) * Epitaxial Die Construction * Ultra-Small Surface Mount Package


    Original     		PDF BC847BVN OT-563 -100mA -10mA 100MHz -10mA 04-Apr-2007

    t6753

    Abstract: transistor ic1A FZT653 ic1a ZDT6753 FZT753 DSA003725
    Text: SM-8 COMPLEMENTARY MEDIUM POWER TRANSISTORS ZDT6753 ISSUE 1 – JANUARY 1996 C1 B1 C1 E1 C2 B2 C2 E2 NPN PNP SM-8 8 LEAD SOT223 PARTMARKING DETAIL – T6753 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL NPN PNP UNIT Collector-Base Voltage VCBO 120 -120 V Collector-Emitter Voltage


    Original     		PDF ZDT6753 OT223) T6753 100MHz 500mA, FZT653 -50mA, -500mA, -100mA, t6753 transistor ic1A ic1a ZDT6753 FZT753 DSA003725

    bc237

    Abstract: BC237B bc238 bc237a bc237c bc239 238B 238c
    Text: BC237/238/239 NPN TO-92 Bipolar Transistors 1. COLLECTOR TO-92 2. BASE 3. EMITTER Features Amplifier dissipation NPN Silicon MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCEO VEBO Parameter Value BC237 45 BC238/239 25 Collector-Emitter Voltage


    Original     		PDF BC237/238/239 BC237 BC238/239 BC238 BC239 100MHz BC237B bc237a bc237c 238B 238c

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors MMDT5451 SOT-363 DUAL TRANSISTOR NPN+PNP FEATURES C1 B2 z Epitaxial Planar Die Construction z Ideal for low Power Amplification and Switching z One 5551(NPN), one 5401(PNP)


    Original     		PDF OT-363 MMDT5451 OT-363 -120V -10mA -50mA -10mA, -50mA,

    BC847PN

    Abstract: pnp transister symbol transister NPN TRANSISTER Tr2 transister 1A TRANSISTER chip transister marking B2 NPN/PNP transistor Silicon Transister
    Text: BC847PN NPN - PNP Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 FEATURE       Epitaxial Die Construction Two internal isolated NPN/PNP transistors in one package Power Dissipation PCM : 0.2 W Temp. = 25˚C


    Original     		PDF BC847PN OT-363 -10mA, 100MHz 200Hz 20-Oct-2009 BC847PN pnp transister symbol transister NPN TRANSISTER Tr2 transister 1A TRANSISTER chip transister marking B2 NPN/PNP transistor Silicon Transister

    Untitled

    Abstract: No abstract text available
    Text: PJ2N2222A NPN Epitaxial Silicon Transistors GENERAL PURPO SE TRANSISTO R TO-92 • Collector-Emitter Voltage: VCEO = 40V • • Collector Dissipation: P D max = 625 mW - TO-92 SOT-23 300 mW - SOT-23 ABSOLUTE MAXIMUM RATINGS (T a = 25℃) Characteristics


    Original     		PDF PJ2N2222A OT-23 OT-23 PJ2N2222ACT PJ2N2222ACX 150mA 150mA,

    bf494

    Abstract: bf 494 BF495 Transistors BF 494 BF 494 C bf494 emitter common BP495
    Text: BF 494 BF 495 NPN SILICON RF SMALL SIGNAL TRANSISTORS $ | j V - iììp f j S y CASE T0-92E THE BF494, BF495 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR RF SMALL SIGNAL APPLICATIONS UP TO 100MHz. CBE BF494 ABSOLUTE MAXIMUM RATINGS BF495 Collector-Base Voltage


    OCR Scan     		PDF BF494, BF495 100MHz. T0-92E BF494 300mW 10jiA bf 494 Transistors BF 494 BF 494 C bf494 emitter common BP495

    circuit diagram for je 182 npn power transistor

    Abstract: fj06
    Text: rz 7 ^ 7 # S G S -T H O M S O N 5 H J O T is M Ü S T S F J S E R I E S MIXED ANALOG - DIGITAL BIPOLAR ARRAYS • ADVANCED BIPOLAR TECHNO LO GY : . NPN, F t = 3GHz . 2 M ETAL LAVER . 100MHz, ECL FUNCTIONS ■ FULL ESD PROTECTION ■ POWER SUPPLY : MAXIMUM RATINGS = UP TO 15V


    OCR Scan     		PDF 100MHz, LM139 100mV circuit diagram for je 182 npn power transistor fj06

    Untitled

    Abstract: No abstract text available
    Text: Transistors SOT23 B SOT23 Case NPN miniReel a » miniBag Order Order Number Number l ^ 7 } Type 500 pcs. ^ 100 pcs. 0 NPN General Purpose MMBT2369 73-2369 53-2369 BC818-16 73-8181 53-8181 BC818-25 73-8182 53-8182 BC818-40 73-8183 53-8183 BC848A 73-8481 53-8481


    OCR Scan     		PDF MMBT2369 BC818-16 BC818-25 BC818-40 BC848A BC848B BC848C BCW31 BCW32 BCW33

    NPN CBO 40V CEO 25V EBO 5V

    Abstract: MMST8598
    Text: Transistors SST U. S. /European SOT-23 • SMT (SC-59/Japanese SOT-23) #NPN Transistors General purpose small signal amplifiers SST SMT SST1130 MMST1130 BV cbo BVceo Min. Min. 30V 25V Vce (sat) BV ebo '“ ° @VCB . hff. @lc & Vce Min. Max. Min. Max. Max.


    OCR Scan     		PDF OT-23) 200mA SC-59/Japanese SST1130 MMST1130 SST5088 MMST5088 100nA 50MHz NPN CBO 40V CEO 25V EBO 5V MMST8598

    sot23 marking code 8pf

    Abstract: marking r2k R2Z SOT23 SSTA29 G1F G1K G3F MARKING CODE B25 SOT23-5
    Text: Transistors SST U. S. /European SOT-23 • SMT (SC-59/Japanese SOT-23) #NPN Transistors General purpose small signal amplifiers SST SST1130 SMT MMST1130 BVcbo BVceo BV ebo @VC8 ui Min. Min. Min. Max. Min. Max. 30V 25V 5V 50nA 20V 120 360 60 ^ ^ce 2mA 1V


    OCR Scan     		PDF OT-23) SC-59/Japanese SST1130 MMST1130 200mA SST5088 MMST5088 100nA SST5089 sot23 marking code 8pf marking r2k R2Z SOT23 SSTA29 G1F G1K G3F MARKING CODE B25 SOT23-5

    marking r2k

    Abstract: marking r1c GAJ SOT23 R1P SOT-223
    Text: Transistors SST U. S. /European SOT-23 • SMT (SC-59/Japanese SOT-23) •N P N Transistors General purpose small signal amplifiers SST SMT BV qbo Min. BV ceo Min. b v EB0 Min. SSTH30 MMST1130 30V 25V 5V SST5088 MMST5088 35V 30V 4.6V 'f° Max. @VCB . hF.E.


    OCR Scan     		PDF OT-23) SSTH30 MMST1130 SC-59/Japanese BCX70K BCX71G BCX71H BCX71J BFS17 marking r2k marking r1c GAJ SOT23 R1P SOT-223