Untitled
Abstract: No abstract text available
Text: Precision Digital Power Monitor ISL28022 Features The ISL28022 is a bi-directional high-side and low-side digital current sense and voltage monitor with serial interface. The device monitors current and voltage and provides the results digitally along with calculated power. The ISL28022 provides
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ISL28022
ISL28022
16-bit
5m-1994.
FN8386
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000-3FF
Abstract: MD1060
Text: MD1060 1. General Description This ROM-Based 8-bit micro-controller uses a fully static CMOS technology process to achieve higher speed and smaller size with the low u power 4 types of oscillator can be selected by programming option: consump-tion and high noise immunity. On chip
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MD1060
000-3FF
MD1060
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200H
Abstract: MDT10C22 PSC 10 289-M
Text: MDT10C22 XTAL－Standard crystal oscillator 1. General Description HFXT－High frequency crystal oscillator This ROM-Based 8-bit micro-controller uses a fully u 4 oscillator start-up time can be selected by static CMOS design technology to achieve high programming option:
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MDT10C22
and80
200H
MDT10C22
PSC 10 289-M
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MDT10P72
Abstract: No abstract text available
Text: MDT10P72 1. General Description -PortB<7:4> interrupt on change -CCP,SCM This EPROM-Based 8-bit micro-controller uses a fully static u CMOS technology process to achieve higher speed and -5 analog inputs multiplexed into one A/D smaller size with the low power consumption and high noise
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MDT10P72
16-bit
MDT10P72
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910U
Abstract: ldr 6k MDT10P651
Text: MDT10P651 1. General Description -CCP1, CCP2, SCM, USAR, USAT, PCM u TMR0 : 8-bit real time clock/counter This EPROM-Based 8-bit micro-controller uses a fully static TMR1 : 16-bit real time clock/count CMOS technology process to achieve higher speed and TMR2 : 8-bit clock/counter internal
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MDT10P651
16-bit
910U
ldr 6k
MDT10P651
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k/833 pin
Abstract: 200H 400H MDT1020
Text: MDT1020 u 4 oscillator start-up time : 150 µs, 20 ms, 40 ms, 80 ms 1. General Description This ROM-Based 8-bit micro-controller uses a fully static CMOS design technology combines higher speed and smaller size with the low power and high noise immunity of CMOS.
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MDT1020
14-bit
k/833 pin
200H
400H
MDT1020
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MDT10F630
Abstract: MDT10F630P11 MDT10F630P13 MDT10F630S11
Text: MDT10F630 automotive 1. General Description to low transmitters/receivers, power pointing remote devices, and This 8-bit Micro-controller uses a fully static telecommunications processors, such as Remote CMOS technology to achieve high speed, small controller,
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MDT10F630
MDT10F630P11
MDT10F630S11
MDT10F630
Temperature25
MDT10F630P11
MDT10F630P13
MDT10F630S11
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mdt10p621
Abstract: No abstract text available
Text: MDT10P621N AB 1. General Description -CCP,SCM This EPROM-Based 8-bit micro-controller uses a fully static TMR0 : 8-bit real time clock/counter CMOS technology process to achieve higher speed and TMR1 : 16-bit real time clock/count smaller size with the low power consumption and high
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MDT10P621N
16-bit
oMDT10P621N
4Kx14
MDT10P621N)
192X8
mdt10p621
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MDT10P621
Abstract: 20MHZ pa 4010 12OSC1
Text: MDT10P621 1. 概述 －TMR0，TMR1，TMR2 时钟 这个 8 位基于 EPROM 微控制器是由完全静 态 CMOS 技术设计，集高速体积小、低功耗和 抗高噪声一体的芯片。内存包括 4K 字节 EPROM 和 192 字节静态 RAM。 －PORTB＜7：4＞电平变化中断
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MDT10P621
PORTB74
20MHZ
200ns
MDT10P
192X8
MDT10P621
20MHZ
pa 4010
12OSC1
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Untitled
Abstract: No abstract text available
Text: MDT10P72N AB 1. General Description -PortB<7:4> interrupt on change -CCP,SCM This EPROM-Based 8-bit micro-controller uses a fully static A/D converter module: CMOS technology process to achieve higher speed and -5 analog inputs multiplexed into one A/D smaller size with the low power consumption and high
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MDT10P72N
16-bit
2Kx14
MDT10P72N)
128X8
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12OSC1
Abstract: MDT10P72 XT 4MHZ 20MHZ
Text: MDT10P72 1. 概述 －TMR0，TMR1，TMR2 时钟 这个 8 位基于 EPROM 微控制器是由完全静 态 CMOS 技术设计，集高速体积小、低功耗和 抗高噪声一体的芯片。内存包括 2K 字节 EPROM 和 128 字节静态 RAM。 －A／D 转换完成
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MDT10P72
PORTB74
20MHZ
200ns
128X8
12OSC1
MDT10P72
XT 4MHZ
20MHZ
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cf 455
Abstract: MDT10P23
Text: MDT10P23 CF 1. General Description This EPROM-Based 8-bit micro-controller uses a fully static CMOS design technology to achieve high speed, small size, low power and high noise immunity. On chip memory includes 2K words EPROM and80 bytes static RAM. Four comparator inputs with external Vref
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MDT10P23
and80
14-bit
MDT10P23
cf 455
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MDT10P62
Abstract: MDT10P
Text: MDT10P62 BB 1. General Description -PortB<7:4> interrupt on change -CCP,SCM This EPROM-Based 8-bit micro-controller uses a fully static CMOS technology process to achieve higher speed TMR0 : 8-bit real time clock/counter and smaller size with the low power consumption and
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MDT10P62
16-bit
MDT10P
128X8
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MDT10P65
Abstract: MDT10P65A1Q MDT10P65A2Q MDT10P65SD42 RT 8284 N pd711
Text: MDT10P65 1. General Description This OTP-Based 8-bit micro-controller uses a fully static CMOS technology process to achieve higher speed and smaller size with the low power consumption and high noise immunity. On chip memory includes 4K words of EPROM, and 192 bytes of static RAM.
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MDT10P65
Temperature25
MDT10P65
MDT10P65A1Q
MDT10P65A2Q
MDT10P65SD42
RT 8284 N
pd711
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LCD09
Abstract: MDT11P0122LQ11 R107H r11ah LCD05 DL05 MDT11P0122 LCD02 R89H DL050
Text: MDT11P0122 1. 概述 这个 8 位 EPROM 微控制器是由完全静态 CMOS 技术设计，集高速体积小、低功 耗和高抗干扰性一体的芯片。内存包括 4K MDT11P0122 的应用范围从发动机控制器， 高速自动电机（电车）到低电源遥控发射、接
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PG6/SEG26
PG5/SEG25
LCD09
MDT11P0122LQ11
R107H
r11ah
LCD05
DL05
MDT11P0122
LCD02
R89H
DL050
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MDT10P72
Abstract: DC MOTOR SPEED CONTROLLER
Text: MDT10P72 BB 1. General Description -PortB<7:4> interrupt on change -CCP,SCM This EPROM-Based 8-bit micro-controller uses a fully static A/D converter module: CMOS technology process to achieve higher speed and -5 analog inputs multiplexed into one A/D smaller size with the low power consumption and high
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MDT10P72
16-bit
128X8
DC MOTOR SPEED CONTROLLER
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MDT10P721
Abstract: 20MHZ
Text: MDT10P721 BB 1. 概述 －A／D 转换完成 这个 8 位基于 EPROM 微控制器是由完全静 态 CMOS 技术设计，集高速体积小、低功耗和 抗高噪声一体的芯片。内存包括 4K 字节 EPROM 和 192 字节静态 RAM。 －PORTB＜7：4＞电平变化中断
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PORTB74
MDT10P721
20MHZ
200ns
192X8
20MHZ
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Untitled
Abstract: No abstract text available
Text: MDT10P62N AB 1. General Description -PortB<7:4> interrupt on change -CCP,SCM This EPROM-Based 8-bit micro-controller uses a fully static CMOS technology process to achieve higher speed TMR0 : 8-bit real time clock/counter and smaller size with the low power consumption and
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16-bit
2Kx14
MDT10P62N)
128X8
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20MHZ
Abstract: MDT10P62 12OSC1 MDT10P621
Text: MDT10P62 .1. 概述 －CCP，SCM 这个 8 位基于 EPROM 微控制器是由完全静 态 CMOS 技术设计，集高速体积小、低功耗和 抗高噪声一体的芯片。内存包括 2K 字节 EPROM 和 128 字节静态 RAM。 TMR0 : 8 位时钟／记数器
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20MHZ
200ns
PORTB74
1MDT10P
128X8
20MHZ
MDT10P62
12OSC1
MDT10P621
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20MHZ
Abstract: MDT10P721
Text: MDT10P721 1. 概述 －A／D 转换完成 这个 8 位基于 EPROM 微控制器是由完全静 态 CMOS 技术设计，集高速体积小、低功耗和 抗高噪声一体的芯片。内存包括 4K 字节 EPROM 和 192 字节静态 RAM。 －PORTB＜7：4＞电平变化中断
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PORTB74
20MHZ
200ns
192X8
20MHZ
MDT10P721
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MDT10P621
Abstract: MDT10P
Text: MDT10P621 BB -PortB<7:4> interrupt on change -CCP,SCM 1. General Description This EPROM-Based 8-bit micro-controller uses a fully static CMOS technology process to achieve higher speed and smaller size with the low power consumption and high noise immunity. On chip
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192X8
MDT10P
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20MHZ
Abstract: MDT10P62 MDT10P
Text: MDT10P62 BB .1. 概述 －CCP，SCM 这个 8 位基于 EPROM 微控制器是由完全静 态 CMOS 技术设计，集高速体积小、低功耗和 抗高噪声一体的芯片。内存包括 2K 字节 EPROM 和 128 字节静态 RAM。 TMR0 : 8 位时钟／记数器
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20MHZ
200ns
PORTB74
MDT10P
128X8
20MHZ
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LDR 03 datasheet
Abstract: mdt2020 200H 400H
Text: MDT2020 DF 1. General Description This EPROM-Based 8-bit micro-controller uses a fully static CMOS design technology combines higher speed and smaller size with the low power and high noise immunity of CMOS. On chip memory system includes 2.0 K bytes of ROM, and 80 bytes of static RAM.
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14-bit
MDT2020
LDR 03 datasheet
200H
400H
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ADI1290
Abstract: DSP56001 FFT DSC freescale EWS300-24 instruction manual
Text: Freescale Semiconductor, Inc. U U Address Register Update Operation: . . . . . ; ea➞Rn Assembler Syntax: ( . . . . . ) ea Freescale Semiconductor, Inc. where ( . . . . . ) refers to any arithmetic or logical instruction which allows parallel moves.
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DSP56000/DSP56001
ADI1290
DSP56001
FFT DSC freescale
EWS300-24 instruction manual
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