Untitled
Abstract: No abstract text available
Text: 100V,20A Low RDS ON Nch Trench Power MOS FET FKG1020 Dec. 2012 Features Package VDS-100V ID-20A RDS(ON) -33m typ (VGS=10V ,ID=10A ) Built-in gate protection diode TO220F
|
Original
|
FKG1020
VDS-------------------------100V
ID----------------------------20A
--------------------33m
O220F
|
PDF
|
100V 100A mos fet
Abstract: No abstract text available
Text: 100V,20A Low RDS ON Nch Trench Power MOS FET FKG1020 Dec. 2012 Features Package VDS-100V ID-20A RDS(ON) -33mΩ typ (VGS=10V ,ID=10A ) Built-in gate protection diode TO220F
|
Original
|
FKG1020
VDS-------------------------100V
ID----------------------------20A
--------------------33m
O220F
100V 100A mos fet
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 100V,20A Low RDS ON Nch Trench Power MOS FET EKG1020 Dec. 2012 Features Package VDS-100V ID-20A RDS(ON) -33m typ (VGS=10V ,ID=10A ) Built-in gate protection diode TO220
|
Original
|
EKG1020
VDS-------------------------100V
ID----------------------------20A
--------------------33m
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 100V,20A Low RDS ON Nch Trench Power MOS FET EKG1020 Dec. 2012 Features Package VDS-100V ID-20A RDS(ON) -33mΩ typ (VGS=10V ,ID=10A ) Built-in gate protection diode TO220
|
Original
|
EKG1020
VDS-------------------------100V
ID----------------------------20A
--------------------33m
|
PDF
|
RDN050N20
Abstract: No abstract text available
Text: RDN050N20 Transistors 10V Drive Nch MOS FET RDN050N20 zExternal dimensions Unit : mm zStructure Silicon N-channel MOS FET TO-220FN 4.5 φ3.2 2.8 1.2 1.3 14.0 5.0 8.0 15.0 zFeatures 1) Low on-resistance. 2) Low input capacitance. 3) Exellent resistance to damage from static electricity.
|
Original
|
RDN050N20
O-220FN
RDN050N20
|
PDF
|
RDN100N20
Abstract: No abstract text available
Text: RDN100N20 Transistors 10V Drive Nch MOS FET RDN100N20 zExternal dimensions Unit : mm zStructure Silicon N-channel MOS FET TO-220FN 4.5 φ3.2 2.8 1.2 1.3 14.0 5.0 8.0 15.0 zFeatures 1) Low on-resistance. 2) Low input capacitance. 3) Excellent resistance to damage from static electricity.
|
Original
|
RDN100N20
O-220FN
RDN100N20
|
PDF
|
RDN150N20
Abstract: 100V 100A mos fet
Text: RDN150N20 Transistors 10V Drive Nch MOS FET RDN150N20 zExternal dimensions Unit : mm zStructure Silicon N-channel MOS FET TO-220FN 4.5 φ3.2 2.8 1.2 1.3 14.0 5.0 8.0 15.0 zFeatures 1) Low on-resistance. 2) Low input capacitance. 3) Exellent resistance to damage from static electricity.
|
Original
|
RDN150N20
O-220FN
RDN150N20
100V 100A mos fet
|
PDF
|
1rf510
Abstract: 1rf510 n-channel irf511 irf510 IRF512 IRF513 1RF511 20W Solenoid Driver transistor irf510 IRF510 complementary
Text: SUPERTEX □1 INC D E l f l 7 7 3 2 c]S □□□15ÛG t, IRF510 IRF511 IRF512 IRF513 T"~ i f * d 7 N-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering Information W n min) Order Number / Package (max) 100V 60V 0.6Q 0.6Q 4.0A 4.0A IRF510 IRF511
|
OCR Scan
|
IRF510
IRF511
IRF512
IRF513
O-220
IRF510
IRF511
IRF512
1rf510
1rf510 n-channel
IRF513
1RF511
20W Solenoid Driver
transistor irf510
IRF510 complementary
|
PDF
|
1RF520
Abstract: irf521 irf520 IRF523
Text: SUPERTEX INC 01 D e | fl773STS GOOlSflH 0 IR F520 IRF521 IR F522 IR F523 R520 R521 Prelim inary N-Channel Enhancement-Mode Vertical DMOS Power FETs T “ 3 f-t* Ordering Information Order Number / Package ^DSS ^ ^DS ON *D(ON) bvms (max) (min) TO-220 TO-92
|
OCR Scan
|
fl773STS
IRF521
O-220
IRF520
IRF522
IRF523
IRF520,
IRF522,
1RF520
IRF523
|
PDF
|
IRF510
Abstract: IRF511 irf513 irf512 IRF-510
Text: □1 SUPERTEX INC D E £ 07732^5 □□□15ÛG t, IRF510 IRF511 IRF512 IRF513 T"~ i f * d 7 N-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering Inform ation b v dss/ ^DS ON (max) W n) (min) Order Number / Package ^D G S 100V 60V 0.6Q 0.6Q 4.0A
|
OCR Scan
|
IRF510
IRF511
IRF512
IRF513
O-220
IRF510
IRF512
IRF510.
irf513
IRF-510
|
PDF
|
IRF521
Abstract: IRF522 irf520 IRF523 RP523 R520 R521 irf520 power G-D-S TO-92 TO-220 3 lead bend
Text: SUPERTEX INC 01 ÇhSupertex inc. D e | fl773STS GOOlSflH 0 IRF520 IRF521 IRF522 IRF523 R520 R521 Preliminary N-Channel Enhancement-Mode Vertical DMOS Power FETs T “ 3 f-t* Ordering Information ^DSS ^ Order Number / Package bvms ^DS ON (max) *D(ON) (min)
|
OCR Scan
|
773STS
IRF520
IRF521
IRF522
IRF523
O-220
IRF522
IRF523
RP523
R520
R521
irf520 power
G-D-S TO-92
TO-220 3 lead bend
|
PDF
|
PDM1405HA
Abstract: No abstract text available
Text: MOSFET MODULE PDM1405HA Dual 140A /500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Cascaded Circuit * Prevented Body Diodes of MOSFETs by SBDs, and Ultra Fast Recovery Diodes Connected in Parallel Circuit * 300KHz High Speed Switching Possible
|
Original
|
PDM1405HA
/500V
300KHz
142i/W
PDM1405HA
|
PDF
|
NTE2382
Abstract: NTE2383
Text: NTE2382 MOSFET N–Channel Enhancement Mode, High Speed Switch Compl to NTE2383 Description: The NTE2382 is a MOS power N–Channel FET in a TO220 type package designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid, and relay
|
Original
|
NTE2382
NTE2383)
NTE2382
NTE2383
|
PDF
|
NTE2383
Abstract: NTE2382
Text: NTE2383 MOSFET P–Channel Enhancement Mode, High Speed Switch Compl to NTE2382 Description: The NTE2383 is a MOS power P–Channel FET in a TO220 type package designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid, and relay
|
Original
|
NTE2383
NTE2382)
NTE2383
NTE2382
|
PDF
|
|
|
RDN120N25
Abstract: No abstract text available
Text: RDN120N25 Transistors 10V Drive Nch MOS FET RDN120N25 zExternal dimensions Unit : mm zStructure Silicon N-channel MOS FET TO-220FN 4.5 φ3.2 2.8 1.2 1.3 14.0 5.0 8.0 15.0 zFeatures 1) Low on-resistance. 2) Low input capacitance. 3) Exellent resistance to damage from static electricity.
|
Original
|
RDN120N25
O-220FN
RDN120N25
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KU390N10P TECHNICAL DATA N-ch Trench MOS FET General Description TENTATIVE This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter,
|
Original
|
KU390N10P
IS40A,
dI/dt200A/,
390N10P
|
PDF
|
RDN080N25
Abstract: No abstract text available
Text: RDN080N25 Transistors 10V Drive Nch MOS FET RDN080N25 zExternal dimensions Unit : mm zStructure Silicon N-channel MOS FET TO-220FN 4.5 φ3.2 2.8 1.2 1.3 14.0 5.0 8.0 15.0 zFeatures 1) Low on-resistance. 2) Low input capacitance. 3) Exellent resistance to damage from static electricity.
|
Original
|
RDN080N25
O-220FN
RDN080N25
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FU JI [MUMmeoe 2SK2446-L,S F-lll S e rie s > Features - N-channel MOS-FET 100V 0,055£2 30A 80 W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance > Applications - Motor Control - General Purpose Power Amplifier
|
OCR Scan
|
2SK2446-L
|
PDF
|
2N6904
Abstract: No abstract text available
Text: toaucti, Una* TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N6904 N-Channel Logic Level Power MOS Field-Effect Transistors (L2 FET) 8 A, 200 V ros(on): 0.6 0 Features: • Design optimized tor 5 volt gate drive
|
Original
|
2N6904
2N6904
00A//US
|
PDF
|
N mosfet 100v 200A
Abstract: Mosfet 100V 50A EE-CM mosfet 200A SDF200NA10 1D20A
Text: Æ lltro n PRQPUCT CÂTÂLQQ N-CHANNEL ENHANCEMENT MOS FET 200 A , 100V, o.onn SDF200NA10 HE • • • • • • • • RUGGED PACKAGE HI-REL CONSTRUCTION CERAMIC EYELETS LEAD BENDING OPTIONS COPPER CORED 52 ALLOY PINS LOW IR LOSSES LOW THERMAL RESISTANCE
|
OCR Scan
|
SDF200NA10
MIL-STD-883
300ns.
N mosfet 100v 200A
Mosfet 100V 50A
EE-CM
mosfet 200A
1D20A
|
PDF
|
R9522
Abstract: IRF9523 R9523 IRF9522 G-D-S TO-92
Text: SUPERTEX INC ÏÏl I>iF | a 7732TS GO OlhûS =5 IRF9522 IRF9523 R9522 R9523 Objective P-Channel Enhancement-Mode Vertical DMOS Power FETs T-37-Z? Ordering Information b v d ss/ O rd e r N u m b e r / P ackage ^DGS ^DS<ON m ax) *D(ON) (m in ) -100V 0.BC1
|
OCR Scan
|
S773ETS
IRF9522
IRF9523
R9522
R9523
T-37-Z5
O-220
-100V
R9522
R9523
G-D-S TO-92
|
PDF
|
2SJ456
Abstract: No abstract text available
Text: 2SJ456 P- Channel Silicon MOS FET Very High-Speed Switching Applications TENTATIVE Features and Applications •Low ON-state resistance. •High-speed switching. •Surface mount type device making the following possible. • Reduction in the number of manufacturing processes for 2SJ456-applied equipment.
|
Original
|
2SJ456
2SJ456-applied
--10V
--100V
--250V
2SJ456
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SOLITRON DEVICES INC 48E D • CATALOm PRODUCT fl3bflb02 00G353b SSO « S O D _ J fO lltr a n devices. inc. N-CHANNEL ENHANCEMENT MOS FET 100V, 25A, o. ion 5DF140 SDF140 SDF140 JAA JAB JDA FEATURES • • • • • • • • RUGGED PACKAGE
|
OCR Scan
|
fl3bflb02
00G353b
5DF140
SDF140
MIL-S-19500
IF-25A.
IF-25A
300nS.
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MOSFET MODULE P2H7M441L / P2H7M440L Dual 50A 450V/500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Separated Circuit * Low On-Resistance and Switching 108.0 Dissipation TYPICAL APPLICATIONS Circuit * Power Supply for the Communications and the Induction Heating
|
Original
|
50V/500V
P2H7M441L
P2H7M440L
P2H7M441L
150MAX
-441L
-440L
|
PDF
|
