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    100V TRANSISTOR Search Results

    100V TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    100V TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    NTE74

    Abstract: 10-32 UNF NPN transistor collector base and emitter
    Text: NTE74 Silicon NPN Transistor General Purpose Switch Absolute Maximum Ratings: Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V


    Original     		NTE74 10-32-UNF-2A NTE74 10-32 UNF NPN transistor collector base and emitter PDF

    NPN transistor collector base and emitter

    Abstract: NTE96 10-32 UNF 2A
    Text: NTE96 Silicon NPN Transistor Power Switching Absolute Maximum Ratings: Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V


    Original     		NTE96 10-32-UNF-2A NPN transistor collector base and emitter NTE96 10-32 UNF 2A PDF

    K1X01

    Abstract: K1X04 K1X08 TMC262 600r/100MHz FDD8424H K2X10 fdd8424 USBUF02W6 27r0
    Text: TMC262 EvalBoard 1v00 TP1 VS TP2 +3V3 LM2594HVM-3.3 GND PWR L1 1K D3 LED Gruen R1 C7 + C6 100nF 120µF/25V D2 IC1 SS16 C5 100nF/100V + C4 100µF/100V SMBJ60A D1 + C3 + C2 100µF/100V + 100µF/100V C1 100µF/100V 150 µH K1 GND Firma TMC Maßstab 101,34% Änderung


    Original     		TMC262 LM2594HVM-3 100nF F/25V 100nF/100V F/100V SMBJ60A K1X01 K1X04 K1X08 600r/100MHz FDD8424H K2X10 fdd8424 USBUF02W6 27r0 PDF

    Zetex ZXTP19100CZ

    Abstract: TS16949 ZXTN19100CZ ZXTP19100CZ ZXTP19100CZTA
    Text: ZXTP19100CZ 100V PNP medium power transistor in SOT89 Summary BVCEO > -100V BVECO > -7V IC cont = 2A VCE(sat) < -130mV @ -1A RCE(sat) = 100m⍀ PD = 2.4W Complementary part number ZXTN19100CZ Description C Packaged in the SOT89 outline this new low saturation 100V PNP


    Original     		ZXTP19100CZ -100V -130mV ZXTN19100CZ ZXTP19100CZTA D-81541 Zetex ZXTP19100CZ TS16949 ZXTN19100CZ ZXTP19100CZ ZXTP19100CZTA PDF

    ZXTN19100CFF

    Abstract: TS16949 ZXTP19100CFF ZXTP19100CFFTA
    Text: ZXTP19100CFF 100V, SOT23F, PNP medium power transistor Summary BVCEO > -100V BVECO > -7V IC cont = -2A VCE(sat) < 120mV @ 1A RCE(sat) = 95m⍀ PD = 1.5W Complementary part number: ZXTN19100CFF Description C Packaged in the SOT23 outline this new low saturation 100V PNP


    Original     		ZXTP19100CFF OT23F, -100V 120mV ZXTN19100CFF D-81541 ZXTN19100CFF TS16949 ZXTP19100CFF ZXTP19100CFFTA PDF

    Bv 42 transistor

    Abstract: zxtP sot223 device Marking ZXTP2013G ZXTP2013GTA ZXTP2013GTC
    Text: ZXTP2013G 100V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -100V : RSAT = 60m ; IC = -5A DESCRIPTION Packaged in the SOT223 outline this new low saturation 100V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


    Original     		ZXTP2013G OT223 -100V OT223 ZXTP2013GTA ZXTP2013GTC DEV26100 Bv 42 transistor zxtP sot223 device Marking ZXTP2013G ZXTP2013GTA ZXTP2013GTC PDF

    SOT89 transistor marking 5A

    Abstract: ZXTN2011Z ZXTN2011ZTA
    Text: ZXTN2011Z 100V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 100V : RSAT = 31m ; IC = 4.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 100V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


    Original     		ZXTN2011Z ZXTN2011ZTA SOT89 transistor marking 5A ZXTN2011Z ZXTN2011ZTA PDF

    ZX5T853Z

    Abstract: ZX5T853ZTA
    Text: ZX5T853Z 100V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 100V : RSAT = 31m ; IC = 4.5A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 100V NPN transistor offers extremely low on state losses making it ideal for use in


    Original     		ZX5T853Z ZX5T853ZTA ZX5T853Z ZX5T853ZTA PDF

    SOT89 transistor marking 4A high frequency

    Abstract: ZX5T953ZTA ZX5T953Z
    Text: ZX5T953Z 100V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -100V : RSAT = 57m ; IC = -3.5A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 100V PNP transistor offers low on state losses making it ideal for use in DC-DC


    Original     		ZX5T953Z -100V ZX5T953ZTA SOT89 transistor marking 4A high frequency ZX5T953ZTA ZX5T953Z PDF

    NTE46

    Abstract: No abstract text available
    Text: NTE46 Silicon NPN Transistor Darlington, General Purpose Amplifier, Preamp, Driver Absolute Maximum Ratings: Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V


    Original     		NTE46 500mA 100mA, 100MHz, 100kHz NTE46 PDF

    p30nf10

    Abstract: B30NF10 P30NF10FP
    Text: STB30NF10 STP30NF10 - STP30NF10FP N-channel 100V - 0.038Ω - 35A - D2PAK/TO-220/TO-220FP Low gate charge STripFET II Power MOSFET General features Type VDSS RDS on ID STB30NF10 100V <0.045Ω 35A STP30NF10 100V <0.045Ω 35A STP30NF10FP 100V <0.045Ω


    Original     		STB30NF10 STP30NF10 STP30NF10FP D2PAK/TO-220/TO-220FP STP30NF10 O-220 O-220FP p30nf10 B30NF10 P30NF10FP PDF

    ZXTP2013Z

    Abstract: ZXTP2013ZTA
    Text: ZXTP2013Z 100V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -100V : RSAT = 57m ; IC = -3.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 100V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line


    Original     		ZXTP2013Z -100V ZXTP2013ZTA ZXTP2013Z ZXTP2013ZTA PDF

    ZXTN2011G

    Abstract: ZXTN2011GTA ZXTN2011GTC
    Text: ZXTN2011G 100V NPN LOW SATURATION MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 100V : RSAT = 36m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new low saturation 100V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


    Original     		ZXTN2011G OT223 OT223 ZXTN2011GTA ZXTN2011GTC ZXTN2011G ZXTN2011GTA ZXTN2011GTC PDF

    ZXTN

    Abstract: ZXTN2011GTC sot223 device Marking ZXTN2011G ZXTN2011GTA Bv 42 transistor
    Text: ZXTN2011G 100V NPN LOW SATURATION MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 100V : RSAT = 36m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new low saturation 100V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


    Original     		ZXTN2011G OT223 OT223 ZXTN2011GTA ZXTN2011GTC ZXTN ZXTN2011GTC sot223 device Marking ZXTN2011G ZXTN2011GTA Bv 42 transistor PDF

    ZX5T953GTA

    Abstract: ZX5T953G ZX5T953GTC x5t953
    Text: ZX5T953G 100V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -100V : RSAT = 60m ; IC = -5A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 100V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC


    Original     		ZX5T953G OT223 -100V OT223 ZX5T953GTA ZX5T953GTC ZX5T953GTA ZX5T953G ZX5T953GTC x5t953 PDF

    ZX5T853G

    Abstract: ZX5T853GTA ZX5T853GTC
    Text: ZX5T853G 100V NPN LOW SAT MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 100V : RSAT = 36m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 100V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC


    Original     		ZX5T853G OT223 OT223 ZX5T853GTA ZX5T853GTC ZX5T853G ZX5T853GTA ZX5T853GTC PDF

    CEB1710

    Abstract: CEP1710 CEF1710
    Text: CEP1710/CEB1710 CEF1710 N-Channel Enhancement Mode Field Effect Transistor FEATURES VDSS RDS ON ID @VGS CEP1710 Type 100V 85mΩ 19A 10V CEB1710 100V 85mΩ 19A 10V CEF1710 100V 85mΩ 19A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability.


    Original     		CEP1710/CEB1710 CEF1710 CEP1710 CEB1710 O-263 O-220 O-220F O-220/263 CEB1710 CEP1710 CEF1710 PDF

    1E14

    Abstract: 2E12 FRF150R4 JANSR2N7292 Rad Hard in Fairchild for MOSFET
    Text: JANSR2N7292 Formerly FRF150R4 25A, 100V, 0.070 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 [ /Title JANS R2N72 92 /Subject (25A, 100V, 0.070 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 25A, 100V,


    Original     		JANSR2N7292 FRF150R4 R2N72 1000K 1E14 2E12 FRF150R4 JANSR2N7292 Rad Hard in Fairchild for MOSFET PDF

    Rad Hard in Fairchild for MOSFET

    Abstract: 2E12 FSL110R4 JANSR2N7410
    Text: JANSR2N7410 Formerly FSL110R4 3.5A, 100V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFET March 1998 [ /Title JANS R2N74 10 /Subject (3.5A, 100V, 0.600 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 3.5A, 100V,


    Original     		JANSR2N7410 FSL110R4 R2N74 Rad Hard in Fairchild for MOSFET 2E12 FSL110R4 JANSR2N7410 PDF

    irf52 0

    Abstract: No abstract text available
    Text: IRF520 Data Sheet November 1999 9.2A, 100V, 0.270 Ohm, N-Channel Power MOSFET [ /Title IRF52 0 /Subject (9.2A, 100V, 0.270 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (9.2A, 100V, 0.270 Ohm, NChannel Power MOSFET, TO220AB , Intersil Corporation) /Creator ()


    Original     		IRF520 IRF52 O220AB IRF520 irf52 0 PDF

    FSF9150R4

    Abstract: p-chan 10a 2E12 JANSR2N7403 Rad Hard in Fairchild for MOSFET
    Text: JANSR2N7403 Formerly FSF9150R4 22A, -100V, 0.140 Ohm, Rad Hard, P-Channel Power MOSFET June 1998 [ /Title JANS R2N74 03 /Subject (22A, 100V, 0.140 Ohm, Rad Hard, PChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 22A, 100V,


    Original     		JANSR2N7403 FSF9150R4 -100V, R2N74 FSF9150R4 p-chan 10a 2E12 JANSR2N7403 Rad Hard in Fairchild for MOSFET PDF

    IRFR120

    Abstract: IRFU120 TB334
    Text: [ /Title IRFR 120, IRFU1 20 /Subject (8.4A, 100V, 0.270 Ohm, NChannel Power MOSFETs) /Autho r () /Keywords (8.4A, 100V, 0.270 Ohm, NChannel Power MOSFETs, Intersil Corporation, TO251AA , TO252AA IRFR120, IRFU120 Data Sheet 8.4A, 100V, 0.270 Ohm, N-Channel


    Original     		O251AA O252AA IRFR120, IRFU120 IRFR120 IRFU120 TB334 PDF

    2E12

    Abstract: FSL9110R4 JANSR2N7411 Rad Hard in Fairchild for MOSFET
    Text: JANSR2N7411 Formerly FSL9110R4 2.5A, -100V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFET June 1998 [ /Title JANS R2N74 11 /Subject (2.5A, -100V, 1.30 Ohm, Rad Hard, PChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 2.5A, 100V,


    Original     		JANSR2N7411 FSL9110R4 -100V, R2N74 2E12 FSL9110R4 JANSR2N7411 Rad Hard in Fairchild for MOSFET PDF

    RF1S540

    Abstract: No abstract text available
    Text: RF1S530SM Data Sheet [ /Title RF1S 530SM /Subject (14A, 100V, 0.160 Ohm, NChannel Power MOSFETs) /Autho r () /Keywords (14A, 100V, 0.160 Ohm, NChannel Power MOSFETs, Intersil Corporation, TO263AB ) /Creator () February 2001 14A, 100V, 0.160 Ohm, N-Channel Power


    Original     		RF1S530SM 530SM O263AB RF1S540 PDF