Untitled
Abstract: No abstract text available
Text: Power Transistors ^32052 2SD1535 001 b?sa 4 b0 2SD1535 Package Dim ensions Silicon NPN Triple Diffused Planar Darlington Type High Power A m plifier U nit 1 mm 4.4max. 10.2max. 5.7max. 2.9max = bF • Features \ • V e ry g o o d lin e a r ity o f D C c u r r e n t g a in I i f f
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2SD1535
100Xl00X2m
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m16jz47
Abstract: M16GZ47 m16gz 16jz47 16GZ47 M16G 16gz SM16JZ47 SM16GZ47 SM16GZ47A
Text: TO SH IBA SM 16GZ47,SM 16JZ47#SM 16GZ47A#SM 16JZ47A TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR S M 1 6 G Z 4 7 , S M 1 6 J Z 4 7 , AC POWER CONTROL APPLICATIONS S M 1 6 G Z 4 7 A , Repetitive Peak Off-State Voltage V D R M = 400, 600V • R.M.S On-State C urrent
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16GZ47
16JZ47
16GZ47A
16JZ47A
SM16GZ47,
SM16JZ47,
SM16GZ47A,
SM16JZ47A
SM16GZ47
SM16GZ47A
m16jz47
M16GZ47
m16gz
M16G
16gz
SM16JZ47
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y9w marking
Abstract: 2SB751 2SB759A 2SD837 2SB759 2sd837a 2SB751A ULN pnp vc2545 Si PNP Epitaxial Planar Darlington
Text: PANASONIC INDL/ELEK-CSENI} h ^ y V T S _ 7SC D | bT3 2 flS4 " 7 ^ 3 3 > T L e7 □ □□flat.D □ 2SB751, 2SB751A 2SB751, 2SB751A > ij =i v P N P x UV h Si P N P Epitaxial Planar Darlington JbZ fi'— i-J& jr— i&mi&WtlMtyi f f l / A F Power Amplifier
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bT32flS4
2SB751,
2SB751A
2SD837,
2SD837A
2SD837A
2SB751
y9w marking
2SB759A
2SD837
2SB759
2SB751A
ULN pnp
vc2545
Si PNP Epitaxial Planar Darlington
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SF10J41
Abstract: No abstract text available
Text: SF10G41 A,SF10J41A TO SHIBA SF10G41A, SF10J41A T O SH IB A TH YR ISTO R SILICON D IFFUSED TYPE Unit in mm M E D IU M P O W E R CO N TRO L A PPLIC A TIO N S. • Repetitive Peak Off-State Voltage Repetitive Peak Reverse Voltage Average On-State Current Gate Trigger Current
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SF10G41
SF10J41A
SF10G41A,
--15mA
SF10G41A
SF10J41A
SF10J41
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F25JZ51
Abstract: TOSHIBA Thyristor F25JZ51 F25GZ51
Text: T O SH IB A SF25GZ51,SF25JZ51 TOSHIBA THYRISTOR SILICON PLANAR TYPE SF25GZ51, SF25JZ51 Unit in mm M EDIUM PO W ER CONTROL APPLICATIONS. 15.8 ± 0.5 • Repetitive Peak Off-State Voltage V d rm \ =400> 600y Repetitive Peak Reverse Voltage V r r m J • Average On-State Current
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SF25GZ51
SF25JZ51
SF25GZ51,
SF25JZ51
F25JZ51
TOSHIBA Thyristor F25JZ51
F25GZ51
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Untitled
Abstract: No abstract text available
Text: T O SH IB A SF10GZ47,SF10JZ47 TOSHIBA THYRISTOR SILICON DIFFUSED TYPE SF10GZ47, SF10JZ47 M EDIUM PO W ER CONTROL APPLICATIONS • • • U nit in mm 1 0 .3 M A X Repetitive Peak Off-State Voltage Repetitive Peak Reverse Voltage Average On-State C urrent Isolation Voltage
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SF10GZ47
SF10JZ47
SF10GZ47,
SF10JZ47
SF10GZ47
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Untitled
Abstract: No abstract text available
Text: T O S H IB A SF5G41 A,SF5J41 A TOSHIBA THYRISTOR SILICON DIFFUSED TYPE SF5G41A, SF5J41A Unit in mm M EDIUM PO W ER CONTROL APPLICATIONS Repetitive Peak Off-State Voltage Repetitive Peak Reverse Voltage V d rm y V rrm J • Average On-State Current :T AV = 5A
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SF5G41
SF5J41
SF5G41A,
SF5J41A
SF5G41A
100Xl00X2mm
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Untitled
Abstract: No abstract text available
Text: T O SH IB A SM 16G45,SM 16J45,SM 16G45A,SM 16J45A TO SHIBA BI-DIRECTIO NAL TRIODE THYRISTOR SILICON PLANAR TYPE SM16G45, SM16J45, SM16G45A, SM16J45A Unit in mm AC POWER CONTROL APPLICATIONS • • • Repetitive Peak Off-State Voltage R.M.S On-State Current
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16G45
16J45
16G45A
16J45A
SM16G45,
SM16J45,
SM16G45A,
SM16J45A
SM16G45
SM16G45A
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SA1012 2 S A 1 012 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS HIGH CURRENT SWITCHING APPLICATIONS. • INDUSTRIAL APPLICATIONS Unit in mm Low Collector Saturation Voltage : v CE(sat)= -0.4V (Max.) at Ic = -3 A High Speed Switching Time : ts^ = 1 .0 (as(Typ.)
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2SA1012
2SC2562.
50X50X2mm
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F10JZ47
Abstract: F10GZ47 Toshiba D-125 F10J SF10GZ47 SF10JZ47 K1012
Text: TOSHIBA S F 1 0 G Z 4 7 #SF10JZ 47 TOSHIBA THYRISTOR SILICON DIFFUSED TYPE SF10GZ47, SF10JZ47 MEDIUM POWER CONTROL APPLICATIONS • U nit in mm 10.3MAX Repetitive Peak Off-State Voltage Repetitive Peak Reverse Voltage Average On-State C urrent Isolation Voltage
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SF10GZ47
SF10JZ47
SF10GZ47,
100Xl00X2mm
F10JZ47
F10GZ47
Toshiba D-125
F10J
SF10JZ47
K1012
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Untitled
Abstract: No abstract text available
Text: SF10G41 A,SF10J41A TOSHIBA T O SHIBA THYRISTOR SILICON DIFFUSED TYPE SF10G41A, SF10J41A Unit in mm M E D IU M POWER CONTROL APPLICATIONS • Repetitive Peak Off-State Voltage Repetitive Peak Reverse Voltage Average On-State Current Gate Trigger Current •
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SF10G41
SF10J41A
SF10G41A,
SF10G41A
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2SD1774
Abstract: 2SD1774A LTO 100 F
Text: Power Transistors 2SD1774, 2SD1774A 2 S D 1 7 7 4 , 2SD1174A Silicon N P N Trip le-D iffu sed Planar Type High DC C urrent Gain Package D im ensions Power A m plifier Ii f e , U n it ! mm • Features 10-5 ± 0 ,5 • High DC current gain (hFE) s • Good linearity of DC current gain
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2SD1774,
2SD1774A
2SD1174A
2SD1774
2SD1774_
2SD1774A~
2SD1770/A)
2SD1774A
LTO 100 F
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1012 TOSHIBA
Abstract: 2sc2562 2SA1012 A101 AC75
Text: TO SH IBA 2SA1012 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 012 HIGH CURRENT SWITCHING APPLICATIONS. • INDUSTRIAL APPLICATIONS Unit in mm jZ>3.6±0.2 .1 0 .5 MAX Low Collector Saturation Voltage : v CE(sat)= - ° - 4V (Max.) at I q = - 3 A
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2SA1012
2SC2562.
1012 TOSHIBA
2sc2562
2SA1012
A101
AC75
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Untitled
Abstract: No abstract text available
Text: T O S H IB A SF5G41 A,SF5J41 A TOSHIBA THYRISTOR SILICON DIFFUSED TYPE SF5G41A, SF5J41A U nit in mm M EDIUM PO W ER CONTROL APPLICATIONS. • 10.3MAX. Repetitive Peak Off-State Voltage Repetitive Peak Reverse Voltage V d r m y =400> 600y V rrm J • Average On-State C urrent
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SF5G41
SF5J41
SF5G41A,
SF5J41A
--15mA
SF5G41A
SF5J41A
SF5G41A
SF5J60
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2sc2562
Abstract: 2SA1012 A101 AC75 2SC2562 Toshiba
Text: 2SA1012 TOSHIBA 2 S A 1 012 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS HIGH CURRENT SWITCHING APPLICATIONS. • • • INDUSTRIAL APPLICATIONS Unit in mm Low Collector Saturation Voltage : v CE(sat) = —0.4V (Max.) at I q = -3 A High Speed Switching Time : tgtg^l.O/^siTyp.)
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2SA1012
2SC2562.
O-220AB
SC-46
2-10A1A
100Xl00X2mm
2sc2562
2SA1012
A101
AC75
2SC2562 Toshiba
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