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    1020 MOSFET Search Results

    1020 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    1020 MOSFET Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    circuit diagram T5 Ballast

    Abstract: capacitor 0.33uf ballast circuit diagram for T5 schematic lamp ballast SNUBBER CAPACITOR IN BALLAST 28W ELECTRONIC BALLAST 2 LAMP SCHEMATIC T5 LAMP SCHEMATIC resistor* 10k ohm resonant rectifier schematic el. ballast
    Text: Application Note AN-1020 IR21571: T5 Lamp Ballast Using Voltage-Mode Filament Heating By T. Ribarich, E. Thompson Table of Contents Page Introduction .1 Functional


    Original     		AN-1020 IR21571: T5/35W) T5/35W T5/28W T5/14W circuit diagram T5 Ballast capacitor 0.33uf ballast circuit diagram for T5 schematic lamp ballast SNUBBER CAPACITOR IN BALLAST 28W ELECTRONIC BALLAST 2 LAMP SCHEMATIC T5 LAMP SCHEMATIC resistor* 10k ohm resonant rectifier schematic el. ballast PDF

    capacitor 0.33uf

    Abstract: RESISTOR 10K OHM electronic ballast ELECTRONIC BALLAST 1 T5 LAMP SCHEMATIC resistor* 10k ohm 28W ELECTRONIC BALLAST 2 LAMP SCHEMATIC 1206 resistor 10k resistor 2 watt datasheet DIODE c18 t5 resistor 820k
    Text: APPLICATION NOTE AN-1020 International Rectifier • 233 Kansas Street El Segundo CA 90245 USA IR21571: T5 Lamp Ballast Using Voltage-Mode Filament Heating By T. Ribarich, E. Thompson TOPICS COVERED Introduction Functional Description Schematic Diagrams Bill of Materials


    Original     		AN-1020 IR21571: T5/35W) T5/35W T5/28W T5/14W capacitor 0.33uf RESISTOR 10K OHM electronic ballast ELECTRONIC BALLAST 1 T5 LAMP SCHEMATIC resistor* 10k ohm 28W ELECTRONIC BALLAST 2 LAMP SCHEMATIC 1206 resistor 10k resistor 2 watt datasheet DIODE c18 t5 resistor 820k PDF

    P521 optocoupler

    Abstract: P521 OPTO P521* opto-coupler optocoupler p521 P521 opto coupler P521 opto-coupler opto p521 opto coupler P521 mosfet 7n60 circuit diagram p521
    Text: Application Note 1020 Green Mode PWM Controller AP3101 - Function Description and Design Consideration Prepared by Wu Quanqing System Engineering Dept. Introduction Owing to low start-up current of 30µA and low operating current of 3mA, the AP3101 can reduce standby


    Original     		AP3101 AP3101 AZ431 P521 optocoupler P521 OPTO P521* opto-coupler optocoupler p521 P521 opto coupler P521 opto-coupler opto p521 opto coupler P521 mosfet 7n60 circuit diagram p521 PDF

    Untitled

    Abstract: No abstract text available
    Text: HIP 1020 Semiconductor November 1998 Data Sheet File Number 4601 Features Single, Double or Triple-Output Hot Plug Controller • Rise Time Controlled to Device-Bay Specifications The HIP1020 applies a linear voltage ramp to the gates of any combination of 3.3V, 5V, and 12V MOSFETs. The


    OCR Scan     		HIP1020 1-800-4-HARRIS PDF

    Untitled

    Abstract: No abstract text available
    Text: CDP 1020 Semiconductor April 1999 Data Sheet The CDP1020 is an ACPI com pliant Device Bay Controller DBC that can control two device bays. The controller Interfaces to the host system through the Industry standard l2C or System Management Bus (SMBus) and Is fully


    OCR Scan     		CDP1020 CDP1020 PDF

    Untitled

    Abstract: No abstract text available
    Text: HIP 1020 interrii D a ta S h e e t A u g u s t 1999 Single, Double or Triple-Output Hot Plug Controller F ile N u m b e r 4 6 0 1 .1 Features • Rise Time Controlled to Device-Bay Specifications The HIP1020 applies a linear voltage ramp to the gates of


    OCR Scan     		HIP1020 PDF

    10-FZ06NIA075SA-P926F33

    Abstract: No abstract text available
    Text: 10-FZ06NIA075SA-P926F33 preliminary datasheet NPC Application flowNPC0 600V/75A General conditions BUCK = = = = VGEon VGEoff Rgon Rgoff 15 V -15 V 8Ω 8Ω VGEon VGEoff Rgon Rgoff Vout= 230 VAC Figure 1. Buck MOSFET BOOST = = = = 15 V -15 V 8Ω 8Ω Figure 2.


    Original     		10-FZ06NIA075SA-P926F33 00V/75A 10-FZ06NIA075SA-P926F33 PDF

    Untitled

    Abstract: No abstract text available
    Text: 10-FZ06NRA075FU-P969F08 preliminary datasheet NPC Application flowNPC 0 600V/ 75A General conditions BUCK = = = = VGEon VGEoff Rgon Rgoff + 15 V - 15 V 8Ω 8Ω Vout= 230 VAC Figure 1. Buck MOSFET BOOST = = = = VGEon VGEoff Rgon Rgoff + 15 V - 15 V 4Ω 4Ω


    Original     		10-FZ06NRA075FU-P969F08 PDF

    Untitled

    Abstract: No abstract text available
    Text: 10-PY06NRA021FS-M410FY datasheet NPC Application flowNPC1 1200V/22mΩ General conditions BUCK = = = = VGEon VGEoff Rgon Rgoff 10V 0V 2Ω 2Ω Vout= 230 VAC Figure 1. BUCK MOSFET BOOST = = = = VGEon VGEoff Rgon Rgoff 10V 0V 2Ω 2Ω Figure 2. Typical average static loss as a function of


    Original     		10-PY06NRA021FS-M410FY 200V/22m PDF

    Untitled

    Abstract: No abstract text available
    Text: FZ06NPA070FP01 preliminary datasheet NPC Application flowNPC 0 600V/75A & 70A PS* General conditions BUCK = = = = VGEon VGEoff Rgon Rgoff 15 V -15 V 8Ω 8Ω Vout= 230 VAC Figure 1. Buck MOSFET BOOST = = = = VGEon VGEoff Rgon Rgoff 15 V 0V 8Ω 8Ω Figure 2.


    Original     		FZ06NPA070FP01 00V/75A PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMTECH CORP 34E ]> • 0G02323 014 « S E T SINGLE MOSFETS PART# BVdss V Ros (on) (Q) lo CONTINUOUS (A@TC = 25°C) r -„ , I - 3> °1 - \ Idm CURRENT (A) pu lse PD MAX (W) CASE STYLE DUAL MOSFETS IN 6 PIN PACKAGE (RATINGS PER MOSFET) PART# BV d s s (V)


    OCR Scan     		0G02323 T0254AA PDF

    Untitled

    Abstract: No abstract text available
    Text: PD -96097 AUTOMOTIVE MOSFET Features l l l l l l IRF2903ZPbF HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 30V RDS on = 2.4mΩ


    Original     		IRF2903ZPbF O-220AB PDF

    PQMD12

    Abstract: No abstract text available
    Text: Small & Powerful NXP MOSFETs and bipolar transistors in DFN1010 First 3 A transistors in a 1.1 mm² leadless plastic package This new product series, housed in tiny leadless packages and ideal for use in tightfootprint power management and load switches, includes small yet powerful high-Ptot


    Original     		DFN1010 OT963 DFN1010B-6 DFN0806 PQMD12 PDF

    IXTH6N100D2

    Abstract: IXTA6N100D2 IXTP3N50D2 IXTA3N50D2 IXTY1R6N50D2 MOSFET 400V TO-220 dz1 ZENER DIODE depletion mode mosfet n-channel 1000V IXTP08N100D2
    Text: POWER N E W Efficiency Through Technology P RO D U CT BR I E F 500V-1000V Depletion-Mode D2TM Power MOSFETs ‘Normally-on’ power mosfet solutions for dynamic load and zero power load switching applications october 2009 OVERVIEW As green energy trends continue to grow in popularity, today’s Design Engineers are now


    Original     		00V-1000V PBN50100D2 IXTH6N100D2 IXTA6N100D2 IXTP3N50D2 IXTA3N50D2 IXTY1R6N50D2 MOSFET 400V TO-220 dz1 ZENER DIODE depletion mode mosfet n-channel 1000V IXTP08N100D2 PDF

    VMO1200-01F

    Abstract: ZY180L MJ10006 VMO1200
    Text: VMO 1200-01F PolarHT Module VDSS = 100 V ID25 = 1220 A RDS on = 1.25 mΩ max. N-Channel Enhancement Mode D S D G KS KS G S Features MOSFET Symbol Conditions VDSS TVJ = 25°C to 150°C VGS Maximum Ratings 75 ± 20 V V ID25 ID80 TC = 25°C TC = 80°C 1220


    Original     		1200-01F 20100614b VMO1200-01F ZY180L MJ10006 VMO1200 PDF

    VMO1200-01F

    Abstract: VMO 1200-01F ZY180L MOSFET "MARKING CODE 7V"
    Text: VMO 1200-01F PolarHT Module VDSS = 100 V ID25 = 1220 A RDS on = 1.25 mΩ max. N-Channel Enhancement Mode D S D G KS KS G S Features MOSFET Symbol Conditions VDSS TVJ = 25°C to 150°C VGS Maximum Ratings 100 ± 20 V V ID25 ID80 TC = 25°C TC = 80°C 1220


    Original     		1200-01F 20100614b VMO1200-01F VMO 1200-01F ZY180L MOSFET "MARKING CODE 7V" PDF

    Untitled

    Abstract: No abstract text available
    Text: VMO 1200-01F VDSS = 100 V ID25 = 1220 A RDS on = 1.25 mΩ max. PolarHT Module N-Channel Enhancement Mode D S D G KS KS G S Features MOSFET Symbol Conditions VDSS TVJ = 25°C to 150°C VGS Maximum Ratings 100 ± 20 V V ID25 ID80 TC = 25°C TC = 80°C 1220


    Original     		1200-01F 20100614b PDF

    mosfet 600V 50A

    Abstract: No abstract text available
    Text: F206NIA200SG-M105F25 preliminary datasheet NPC Application flowNPC2 600V/200A General conditions BUCK = = = = VGEon VGEoff Rgon Rgoff 15 V -15 V 4Ω 4Ω Vout= 230 VAC Figure 1. Buck MOSFET BOOST = = = = VGEon VGEoff Rgon Rgoff 15 V -15 V 4Ω 4,015 Ω Figure 2.


    Original     		F206NIA200SG-M105F25 00V/200A mosfet 600V 50A PDF

    uPD16879

    Abstract: VP15-00-3
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD16879 MONOLITHIC QUAD H BRIDGE DRIVER CIRCUIT The µPD16879 is a monolithic quad H bridge driver IC that employs a CMOS control circuit and a MOSFET output circuit. Because it uses MOSFETs in its output stage, this driver IC consumes less power than conventional driver


    Original     		PD16879 PD16879 64-step 38-pin uPD16879 VP15-00-3 PDF

    2281 led driver

    Abstract: transistor buz mosfet BUZ 326 relay rd3 relay auto 600R 680R MH89625C MH89625C-5 MH89625C-6
    Text: MH89625C  OPS/DID PCM SLIC Preliminary Information Features • • • • • • • • • • • • • ISSUE 4 Input impedance variants: - 600Ω - 200Ω + 680Ω // 0.1µF - 200Ω + 560Ω // 0.1µF Operates with a wide range of battery voltages


    Original     		MH89625C MH80625C. 2281 led driver transistor buz mosfet BUZ 326 relay rd3 relay auto 600R 680R MH89625C MH89625C-5 MH89625C-6 PDF

    2281 led driver

    Abstract: LM LED driver high voltage 250V mosfet BUZ 326 BUZ MOSFET VOLTAGE LEVEL RELAY SM 125 220
    Text: MH89625C OPS/DID PCM SLIC Preliminary Information Features • ISSUE 4 Input impedance variants: - 600« - 200i2 + 680i2//0.1nF - 200Q + 560C2 II 0.1 |iF Operates with a wide range of battery voltages Constant current battery feed with constant voltage fallback for long loop drive capabilities


    OCR Scan     		MH89625C 200i2 680i2//0 560C2 MH896-281 MH80625C MH80625C. 2281 led driver LM LED driver high voltage 250V mosfet BUZ 326 BUZ MOSFET VOLTAGE LEVEL RELAY SM 125 220 PDF

    2281 led driver

    Abstract: mosfet BUZ 326 tip 147 TRANSISTOR equivalent PTC 2272 IN4004 BUZ 72 A equivalent relay rd3 IN4004 diode BUZ MOSFET IN4004 datasheet
    Text: MH89625C  OPS/DID PCM SLIC Preliminary Information Features • • • • • • • • • • • • • ISSUE 4 Input impedance variants: - 600Ω - 200Ω + 680Ω // 0.1µF - 200Ω + 560Ω // 0.1µF Operates with a wide range of battery voltages


    Original     		MH89625C 2281 led driver mosfet BUZ 326 tip 147 TRANSISTOR equivalent PTC 2272 IN4004 BUZ 72 A equivalent relay rd3 IN4004 diode BUZ MOSFET IN4004 datasheet PDF

    IN4004 diode

    Abstract: 2281 led driver BUZ 72 A equivalent mosfet BUZ 326 PTC 2272 IN4004 IN4004 datasheet CIRCUIT FOR constant current AT 0.2 MA diode in4004 tip 147 TRANSISTOR equivalent
    Text: MH89625C  OPS/DID PCM SLIC Preliminary Information Features • • • • • • • • • • • • • ISSUE 4 Input impedance variants: - 600Ω - 200Ω + 680Ω // 0.1µF - 200Ω + 560Ω // 0.1µF Operates with a wide range of battery voltages


    Original     		MH89625C IN4004 diode 2281 led driver BUZ 72 A equivalent mosfet BUZ 326 PTC 2272 IN4004 IN4004 datasheet CIRCUIT FOR constant current AT 0.2 MA diode in4004 tip 147 TRANSISTOR equivalent PDF

    MOSFET Modules

    Abstract: No abstract text available
    Text: SENSITRON_ SEMICONDUCTOR MODXX-XX STANDARD HERMETIC MOSFET MODULES FEATURES: • High Power Density • Low Saturation Voltage V C e (s a t • Low Thermal Resistance (R e jc) INDUSTRIAL IGBT PRODUCT MAP lD(Amps) 20 30 CONFIGURATION Voss (V) Half-Bridge


    OCR Scan     		MCID2022 M002001 M002004 MOD2011 MOD2015 MOD2018 MOD2007 MOD2014 MOD2023 MOD2002 MOSFET Modules PDF