eeprom 25080
Abstract: 25080 948AL CAT25080 CAT25160 Q100 25080 eeprom 1024x8
Text: CAT25080, CAT25160 8-Kb and 16-Kb SPI Serial CMOS EEPROM Description The CAT25080/25160 are 8−Kb/16−Kb Serial CMOS EEPROM devices internally organized as 1024x8/2048x8 bits. They feature a 32−byte page write buffer and support the Serial Peripheral Interface
|
Original
|
PDF
|
CAT25080,
CAT25160
16-Kb
CAT25080/25160
8-Kb/16-Kb
1024x8/2048x8
32-byte
CAT25080/25160
751BD
517AW
eeprom 25080
25080
948AL
CAT25080
CAT25160
Q100
25080 eeprom
1024x8
|
25c08v
Abstract: 25C16LI CAT25160 25C16VI 25C08 25C16 AEC-Q100 CAT25C08 CAT25C16 25C08L
Text: Not Recommended for New Design, Replace with CAT25080/CAT25160 CAT25C08, CAT25C16 8K/16K SPI Serial CMOS EEPROM FEATURES DESCRIPTION • 10 MHz SPI compatible The CAT25C08/16 is a 8K/16K Bit SPI Serial CMOS EEPROM internally organized as 1024x8/2048x8 bits.
|
Original
|
PDF
|
CAT25080/CAT25160
CAT25C08,
CAT25C16
8K/16K
CAT25C08/16
1024x8/2048x8
CAT25C08/
32-byte
CAT25C08/or
25c08v
25C16LI
CAT25160
25C16VI
25C08
25C16
AEC-Q100
CAT25C08
CAT25C16
25C08L
|
25c08v
Abstract: 25C16VI 25C16V cat25c08 25Y08 24C168
Text: CAT25C08, CAT25C16 8K/16K SPI Serial CMOS EEPROM FEATURES DESCRIPTION • 10 MHz SPI compatible The CAT25C08/16 is a 8K/16K Bit SPI Serial CMOS EEPROM internally organized as 1024x8/2048x8 bits. Catalyst’s advanced CMOS Technology substantially reduces device power requirements. The CAT25C08/
|
Original
|
PDF
|
CAT25C08,
CAT25C16
8K/16K
32-byte
CAT25C08/16
1024x8/2048x8
CAT25C08/
25c08v
25C16VI
25C16V
cat25c08
25Y08
24C168
|
82S181/BJA
Abstract: 82S181 1024x8 PROM
Text: Philips Semiconductors Military Bipolar Memory Products Product specification 8K-bit TTL bipolar PROM 1024x8 82S181 FEATURES DESCRIPTION • Address access time: 90ns max • Input loading: -150µA max • On-chip address decoding • Four chip enable inputs
|
Original
|
PDF
|
1024x8)
82S181
82S181
500ns
82S181/BJA
1024x8 PROM
|
25160D
Abstract: eeprom 25080 25080 eeprom
Text: CAV25080, CAV25160 8-Kb and 16-Kb SPI Serial CMOS EEPROM Description The CAV25080/25160 are 8−Kb/16−Kb Serial CMOS EEPROM devices internally organized as 1024x8/2048x8 bits. They feature a 32−byte page write buffer and support the Serial Peripheral Interface
|
Original
|
PDF
|
CAV25080,
CAV25160
16-Kb
CAV25080/25160
8-Kb/16-Kb
1024x8/2048x8
32-byte
751BD
948AL
25160D
eeprom 25080
25080 eeprom
|
1024X8
Abstract: tws 1000
Text: d210002 1024X8, Mux 16, Drive 3, Non-Pipelined High-Speed Single-Port Synchronous SRAM Features Memory Description • Precise Optimization for Infineon’s C9DD1 0.20µm The 1024X8 SRAM is a high-performance, synchronous single-port, 1024-word by 8-bit memory designed to
|
Original
|
PDF
|
d210002
1024X8,
1024X8
1024-word
61mm2
HS300-SS
99Q3P0
tws 1000
|
25160D
Abstract: s08d 25080D CAT25080YE-G eeprom 25080 UDFN8 254
Text: CAT25080, CAT25160 8-Kb and 16-Kb SPI Serial CMOS EEPROM Description The CAT25080/25160 are 8−Kb/16−Kb Serial CMOS EEPROM devices internally organized as 1024x8/2048x8 bits. They feature a 32−byte page write buffer and support the Serial Peripheral Interface
|
Original
|
PDF
|
CAT25080,
CAT25160
16-Kb
CAT25080/25160
8-Kb/16-Kb
1024x8/2048x8
32-byte
751BD
517AW
25160D
s08d
25080D
CAT25080YE-G
eeprom 25080
UDFN8 254
|
63S081
Abstract: No abstract text available
Text: £1 Advanced Micro Devices 53/63S881/A High Performance 1024x8 PROM TiW PROM Family FEATURES/BENEFITS APPLICATIONS • 30-ns maximum access time • Microprogram control store • Reliable iltanlum-tungsten fuses TIW guaran tee greater than 98% programming yields
|
OCR Scan
|
PDF
|
53/63S881/A
1024x8
30-ns
24-pin
600-mil
53/63S881
53/63S881A
63S081
|
Untitled
Abstract: No abstract text available
Text: Am27S35/Am27S37 8,192-Bit 1024x8 Bipolar Registered PROM with Programmable INITIALIZE Input Versatile programmable asynchronous or synchronous enable for simplified word expansion Buffered common INITIALIZE input either asynchronous (Am27S35) or synchronous (Am27S37)
|
OCR Scan
|
PDF
|
Am27S35/Am27S37
192-Bit
1024x8)
24-pin,
300-mil
Am27S35
Am27S37
|
27S181
Abstract: Am27S181/27S181
Text: A m a 2 7 S 1 8 1 /2 7 S 1 8 1 A A m 2 7 S 2 8 1 Advanced Micro Devices /2 7 S 2 8 1 A 8,192-Bit 1024x8 Bipolar PROM DISTINCTIVE CHARACTERISTICS • • Fast access time allows high system speed 50% power savings on deselected parts — enhances reliability through total system heat reduction
|
OCR Scan
|
PDF
|
192-Bit
1024x8)
Am27S101
Am27S181/27S181
27S281/27S281A
TC003452
Am27S181
/27S181A
Am27S281/27S281
27S181
|
Am2140s
Abstract: VC1039
Text: Am2130/Am2140 1024x8 Dual-Port Static Random-Access Memories DISTINCTIVE CHARACTERISTICS True dual port operation Access time as fast as 55 ns Master device Am2130 has on-chip arbitration Expandable data bus width in multiples of 8 bits using one master (Am2130) and required number of slave
|
OCR Scan
|
PDF
|
Am2130/Am2140
1024x8
Am2130)
Am2140)
48-pin
52-pin
Am2130
Am2140
Am2140s
VC1039
|
63S881
Abstract: 53S881 53S881A 63S881A 1024x8 PROM
Text: High Performance 1 0 2 4 x 8 PROM TiW PROM Family 5 3 /6 3 S 8 8 1 5 3 /6 3 S 8 8 1 A Features/Benefits Description • 30-ns maximum access time The 53/63S881 and 53/63S881A are 1024x8 bipolar PROMs featuring low inpu t current PNP inputs, full S chottky clam ping,
|
OCR Scan
|
PDF
|
1024x8
53/63S881
53/63S881A
30-ns
24-pin
600-mil
53/63S881
53/63S881A
63S881
53S881
53S881A
63S881A
1024x8 PROM
|
AM27S35
Abstract: AM27S35A CD3024 PD3024 1024x8 PROM
Text: Am27S35/S35A/Am27S37/S37A _ „ Advanced Micro Devices 8,192-Bit 1024x8 Bipolar Registered PROM with Programmable INITIALIZE Input DISTINCTIVE CHARACTERISTICS • • Slim, 24-pin, 300-mil lateral center package occupies approximately 1/3 the board space required by standard
|
OCR Scan
|
PDF
|
Am27S35/S35A/Am27S37/S37A
192-Bit
1024x8)
24-pin,
300-mil
Am27S35
Am27S37
WF021580
AM27S35A
CD3024
PD3024
1024x8 PROM
|
Untitled
Abstract: No abstract text available
Text: HOLTEK r r HT24L C08/16 8K/16K 2-Wire CMOS Serial EEPROM Features • • • • • • • • • • • • • • O perating voltage: 2.4V~5.5V Low power consumption - O peration: 5mA m ax. - Standby: 5|iA m ax. In tern al organization - 8 K H T24LC08 : 1024x8
|
OCR Scan
|
PDF
|
HT24L
C08/16
8K/16K
T24LC08)
1024x8
T24LC16)
2048x8
16-byte
40-year
|
|
|
27S181
Abstract: No abstract text available
Text: Am27Sl80/27S181/PS181 Am27S280/27S281/PS281 8,192-Bit 1024x8 Bipolar PROM > 3 DISTINCTIVE CHARACTERISTICS • • Fast access time allows high system speed 50% power savings on deselected parts — enhances reliability through total system heat reduction
|
OCR Scan
|
PDF
|
Am27Sl80/27S181/PS181
Am27S280/27S281/PS281
192-Bit
1024x8)
Am27S180/27S181
Am27S180
Am27S181
300-mil.
Am27S280/27S281
Am27PSl81/27PS281
27S181
|
Untitled
Abstract: No abstract text available
Text: High Performance 10 24x8 PROM TiW PROM Family 5 3 /6 3 S 8 8 1 5 3 /6 3 S 8 8 1 A Featu res/B en efits Description • 30-ns m aximum access time T h e 53/63S881 a nd 5 3/63S 881A are 1024x8 b ip o la r P R O M s fe a tu rin g lo w in p u t c u rre n t PNP in p u ts , fu ll S c h o ttk y c la m p in g ,
|
OCR Scan
|
PDF
|
30-ns
53/63S881
3/63S
1024x8
63S881
S3S881
|
AM27S181
Abstract: 27s181 27s181a AM27S181/BJA AM27S181A CERAMIC LEADLESS CHIP CARRIER LCC 24 AM27S181PC
Text: Am27S181/27S181A Am27S281/27S281A 8,192-Bit 1024x8 Bipolar PROM Devices DISTINCTIVE CHARACTERISTICS • Fast access time allows high system speed • 50% power savings on deselected parts — enhances reliability through total system heat reduction • Platinum-Silicide fuses guarantee high reliability, fast
|
OCR Scan
|
PDF
|
Am27S181
/27S181A
Am27S281
/27S281A
192-Bit
1024x8)
TC003441
TC003452
KS000010
27s181
27s181a
AM27S181/BJA
AM27S181A
CERAMIC LEADLESS CHIP CARRIER LCC 24
AM27S181PC
|
Binary to hexadecimal
Abstract: Signetics 2608 rom 1024 1024x8 TEN 8 Series 2608 rom 1024x8 1024X8
Text: sjgnotics 1024X8 STATIC READ ONLY MEMORY 12608 2608 1 N CHANNEL SILICON GATE MOS 2600 SERIES PIN C O N F IG U R A T IO N D ESCRIPTIO N The 2608 is a fu lly decoded, static, mask programmable read-only memory. It has a capacity of 8192 bits organized 1024 X 8. The 2608 is fabricated with low threshold
|
OCR Scan
|
PDF
|
1024X8
650ns.
Binary to hexadecimal
Signetics 2608
rom 1024 1024x8
TEN 8 Series
2608
rom 1024x8
|
1024x8 PROM
Abstract: No abstract text available
Text: c, MmoHMb m Memories High Performance 1024x8 PROM 5 3 /6 3 S 8 8 0 5 3 /6 3 S 8 8 1 5 3 /6 3 S 8 8 1 A / / / / / / / / / ////////////////////////////////////A DVA NCE INFORMATION Features/ Benefits Applications • 8192-blt memory • Microprogram control stores
|
OCR Scan
|
PDF
|
1024x8
8192-blt
128x64
1024x8 PROM
|
HB3108A
Abstract: Hughes Microelectronics HS 1106 BS H3108 cs 308
Text: H3108A 1024x8 CMOS EEPROM MICROELECTRONICS CENTER DESCRIPTION H ughes H3108A is a CM OS E lectrica lly Erasable P rogram m able ROM EEPROM organized 1024 x 8. It is an im proved version o f th e H3108, featuring both low er pow er d is s ip a tio n and latched data and addresses
|
OCR Scan
|
PDF
|
H3108A
1024x8
H3108A
H3108,
HB3108A
Hughes Microelectronics
HS 1106 BS
H3108
cs 308
|
64X128
Abstract: 53RS881 53RS881A 63RS881 63RS881A 1024X8
Text: 53/63RS881/A Advanced Micro Devices High Performance 1024x8 Registered PROM FEATURES/BENEFITS APPLICATIONS • Edge triggered “D" registers • Microprogram control store • Synchronous and asynchronous enables • State sequencers • Versatile 1:16 initialization words
|
OCR Scan
|
PDF
|
53/63RS881/A
1024x8
24-pln
53/63RS881
53/63RS881A
-30pF.
64X128
53RS881
53RS881A
63RS881
63RS881A
|
723CL
Abstract: AM27S281PC 27s181 AM27S181 27S181A AM27S181PC AM27S181A 27S281
Text: Am27S181 /27S181A Am27S281 /27S281A 8,192-Bit 1024x8 Bipolar PROM Devices DISTINCTIVE CHARACTERISTICS • Fast access time allows high system speed • 50% power savings on deselected parts — enhances reliability through total system heat reduction • Platinum-Silicide fuses guarantee high reliability, fast
|
OCR Scan
|
PDF
|
Am27S181
/27S181A
Am27S281
/27S281A
192-Bit
1024x8)
TC003441
TC003452
KS000010
723CL
AM27S281PC
27s181
27S181A
AM27S181PC
AM27S181A
27S281
|
Untitled
Abstract: No abstract text available
Text: a 53/63S881/A Advanced Micro Devices High Performance 1024x8 PROM TiW PROM Family FEATURES/BENEFITS APPLICATIONS • 30-ns maximum access time • Microprogram control store • Reliable titanium-tungsten fuses TIW guaran tee greater than 98% programming yields
|
OCR Scan
|
PDF
|
53/63S881/A
1024x8
30-ns
24-pln
600-mil
53/63S881
53/63S881A
|
M2130
Abstract: No abstract text available
Text: Am2130/Am2140 AdVM“ o 1024x8 Dual-Port Static Random-Access Memories Devices DISTINCTIVE CHARACTERISTICS True dual port operation Access time as fast as 55 ns Master device Am2130 has on-chip arbitration Expandable data bus width in multiples of 8 bits using
|
OCR Scan
|
PDF
|
Am2130/Am2140
1024x8
Am2130)
Am2140)
48-pin
52-pin
Am2130
Am2140
M2130
|
