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Glenair Inc 100-041-02N12A
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Interstate Connecting Components	100-041-02N12A					1 - 10 - 100 - 1000 - 10000 -	Buy Now

102N12A Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
102N12 Abstract: Directed Energy Directed 400P DE375-102N12A Text: Directed Energy, Inc. An ♦ ♦ ♦ ♦ ♦ DE375-102N12A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 50MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	DE375-102N12A 50MHz 102N12 Directed Energy Directed 400P DE375-102N12A	PDF
13.56MHZ 3KW GENERATOR Abstract: 3KW GENERATOR mosfet 5kw high power rf 5kw switching power supply design HIGH FREQUENCY 5kw power Transformer circuit diagram of 13.56MHz RF Generator mosfet 3kw 3kW AND 5kW HALF-BRIDGE CLASS-D RF GENERATORS 3kw mosfet equivalent circuit of power transformer 11kv Text: DIRECTED ENERGY, INC. TECHNICAL NOTE 3kW AND 5kW HALF-BRIDGE CLASS-D RF GENERATORS AT 13.56MHz WITH 89% EFFICENCY AND LIMITED FREQUENCY AGILITY Abstract DEI / IXYS has developed an RF generator design for very high power at a ISM frequency. of 13.56MHz, using a pair of DE375-102N12A	Original	56MHz 56MHz, DE375-102N12A DEIC420 DE375-102N12A 0-471-03018-X 13.56MHZ 3KW GENERATOR 3KW GENERATOR mosfet 5kw high power rf 5kw switching power supply design HIGH FREQUENCY 5kw power Transformer circuit diagram of 13.56MHz RF Generator mosfet 3kw 3kW AND 5kW HALF-BRIDGE CLASS-D RF GENERATORS 3kw mosfet equivalent circuit of power transformer 11kv	PDF
DE375-102N12A Abstract: 400P Text: DE375-102N12A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 50MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	DE375-102N12A 50MHz DE375-102N12A 400P	PDF
DE375-102N12A Abstract: PIN diode SPICE model 400P 102N12A Text: DE375-102N12A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 50MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous	Original	DE375-102N12A 50MHz 2N12A DE375-102N12A PIN diode SPICE model 400P 102N12A	PDF
IXZ4DF12N100 Abstract: DEIC515 500w mosfet power amplifier circuit diagram POWER MOSFET Rise Time 1 ns circuit diagram of smps 500w RF POWER MOSFET deic 515 rf mosfet power amplifier DEIC-515 RF Amplifier 500w 175 mhz Text: IXZ4DF12N100 RF Power MOSFET & DRIVER Driver / MOSFET Combination DEIC-515 Driver combined with a DE375-102N12A MOSFET Gate driver matched to MOSFET Features • Isolated Substrate − high isolation voltage >2500V − excellent thermal transfer − Increased temperature and power cycling capability	Original	IXZ4DF12N100 DEIC-515 DE375-102N12A 1000lvin IXZ4DF12N100 DEIC515 500w mosfet power amplifier circuit diagram POWER MOSFET Rise Time 1 ns circuit diagram of smps 500w RF POWER MOSFET deic 515 rf mosfet power amplifier RF Amplifier 500w 175 mhz	PDF