capacitor 226 35K
Abstract: R 226 35k 226 35K capacitor
Text: MOTOROLA Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF21120 N–Channel Enhancement–Mode Lateral MOSFET Designed for W–CDMA base station applications with frequencies from 2110
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MRF21120/D
MRF21120
MRF21120/D
capacitor 226 35K
R 226 35k
226 35K capacitor
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capacitor 226 35K
Abstract: 226 35K capacitor
Text: MOTOROLA Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21120 MRF21120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to
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MRF21120/D
MRF21120
MRF21120S
capacitor 226 35K
226 35K capacitor
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226 35K capacitor
Abstract: MRF21120 z40 mosfet 226 35K capacitor 226 35K
Text: MOTOROLA Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF21120 N–Channel Enhancement–Mode Lateral MOSFET Designed for W–CDMA base station applications with frequencies from 2110
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MRF21120/D
MRF21120
226 35K capacitor
MRF21120
z40 mosfet
226 35K
capacitor 226 35K
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capacitor 106 35K
Abstract: capacitor 226 35K 022 electrolytic 226 35K capacitor 226 35K capacitor 106 35K tantalum 105 35K capacitor capacitor 106 35K electrolytic 226 35K capacitor 106 35K 045 226 35K capacitor datasheet
Text: MOTOROLA Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21120 MRF21120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to
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MRF21120/D
MRF21120
MRF21120S
MRF21120
capacitor 106 35K
capacitor 226 35K 022 electrolytic
226 35K
capacitor 226 35K
capacitor 106 35K tantalum
105 35K capacitor
capacitor 106 35K electrolytic
226 35K capacitor
106 35K 045
226 35K capacitor datasheet
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226 35k 051
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21120 MRF21120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110
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MRF21120/D
MRF21120
MRF21120S
MRF21120/D
226 35k 051
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226 35K capacitor
Abstract: 226 35K R 226 35k 029 capacitor 226 35K capacitor 105 35K 102 capacitor 104 35k R 226 35k 029 R variable capacitor 105 35K capacitor fm variable capacitor
Text: MOTOROLA Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21120 MRF21120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to
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MRF21120/D
MRF21120
MRF21120S
MRF21120
226 35K capacitor
226 35K
R 226 35k 029
capacitor 226 35K
capacitor 105 35K 102
capacitor 104 35k
R 226 35k 029 R
variable capacitor
105 35K capacitor
fm variable capacitor
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21120 MRF21120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110
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MRF21120/D
MRF21120
MRF21120S
MRF21120
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Untitled
Abstract: No abstract text available
Text: INFRARED DETECTOR Infrared detector module with preamp Thermoelectrically cooled type Easy-to-use detector module with built-in preamp Infrared detector modules operate just by connecting to a DC power supply. The detector element is selectable from among InGaAs, PbS, PbSe,
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P4631-10
SE-171
KIRD1036E07
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Untitled
Abstract: No abstract text available
Text: INFRARED DETECTOR Infrared detector module with preamp Thermoelectrically cooled type Easy-to-use detector module with built-in preamp Infrared detector modules operate just by connecting to a DC power supply. The detector element is selectable from among InGaAs, PbS, PbSe,
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P4631-10
SE-171
KIRD1036E08
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PDF
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Untitled
Abstract: No abstract text available
Text: INFRARED DETECTOR Infrared detector module with preamp Thermoelectrically cooled type Easy-to-use detector module with built-in preamp Infrared detector modules operate just by connecting to a DC power supply. The detector element is selectable from among InGaAs, PbS, PbSe,
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P4631-10
SE-171
KIRD1036E09
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20e221
Abstract: WP1J 10V471K varistor 472 ns b 10v 471k tnr 47p3 10n 471k TRANSISTOR F10 10N metal oxide varistor 471k 20k tnr g 471k
Text: METAL OXIDE VARISTORS TNR METAL OXIDE VARISTORS TNR CAT. No. E1006S INDEX PRODUCT SEARCH SERIES TABLE PRECAUTIONS AND GUIDELINES GROUP CHART PART NUMBERING SYSTEM TECHNICAL TERMS ON VARISTORS PRODUCTION GUIDE SAFETY STANDARDS TAPING SPECIFICATION PACKAGING
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E1006S
AC110V
TND14V-271K
AC220V
TND14V-471K
20e221
WP1J
10V471K
varistor 472 ns b
10v 471k tnr
47p3
10n 471k
TRANSISTOR F10 10N
metal oxide varistor 471k 20k
tnr g 471k
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uA 741 NC
Abstract: MS-026 TSSOP-16 VSC7959 VSC7961
Text: VITESSE SEMICONDUCTOR CORPORATION Advance Product Information VSC7961 3.125Gb/s PECL Limiting Amplifier with LOS Detect Features Applications • SONET/SDH at 622Mb/s, 1.244Gb/s, 2.488Gb/s, and 3.125Gb/s • Full-Speed Fibre Channel 1.062Gb/s • Small Form Factor (SFF) Receivers
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VSC7961
125Gb/s
622Mb/s,
244Gb/s,
488Gb/s,
125Gb/s
062Gb/s)
100ps
TSSOP-16,
VSC7961
uA 741 NC
MS-026
TSSOP-16
VSC7959
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transzorb marking code GEM
Abstract: general semiconductor marking code GFX ghg 712 marking code GDD gde 103 ghg 122 307 GDE
Text: SMCJ5.0 thru 188CA Surface Mount TRANSZORB Transient Voltage Suppressors Stand-off Voltage 5.0 to 188V Peak Pulse Power 1500W DO-214AB SMC J-Bend Cathode Band d e d n nge e t x E e Ra g a t l Vo Mounting Pad Layout 0.245 (6.22) 0.220 (5.59) 0.126 (3.20)
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188CA
DO-214AB
50mVp-p
transzorb marking code GEM
general semiconductor marking code GFX
ghg 712
marking code GDD
gde 103
ghg 122
307 GDE
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bel 188 transistor
Abstract: GHR TVS diode marking GDE on semiconductor transzorb marking code GEM marking code GGt transistor BEL 188 BDW 65 C transistor BFD 162 BFM General Semiconductor TRANSZORB gem
Text: SMCJ5.0 thru 188CA Vishay Semiconductors formerly General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors DO-214AB SMC J-Bend Cathode Band 0.245 (6.22) 0.220 (5.59) 0.126 (3.20) 0.114 (2.90) d e d n nge e t x E e Ra ag t l o V Stand-off Voltage 5.0 to 188V
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188CA
DO-214AB
DO-214AB
50mVp-p
1-May-02
bel 188 transistor
GHR TVS
diode marking GDE on semiconductor
transzorb marking code GEM
marking code GGt
transistor BEL 188
BDW 65 C
transistor BFD 162
BFM General Semiconductor
TRANSZORB gem
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bel 188 transistor
Abstract: GDE 85 ghk 92 tvs SMC MARKING BEM 45 GFX 6 ggr 86 GHL 88 GHR TVS marking ghm
Text: SMCJ5.0 thru 188CA Vishay Semiconductors formerly General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors DO-214AB SMC J-Bend Cathode Band 0.245 (6.22) 0.220 (5.59) 0.126 (3.20) 0.114 (2.90) d e d n nge e t x E e Ra ag t l o V Stand-off Voltage 5.0 to 188V
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188CA
DO-214AB
50mVp-p
26-Sep-02
bel 188 transistor
GDE 85
ghk 92
tvs SMC MARKING
BEM 45
GFX 6
ggr 86
GHL 88
GHR TVS
marking ghm
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GENERAL SEMICONDUCTOR MARKING bfm
Abstract: transzorb marking code GEM GFM 57, TVS bel 188 transistor marking ghm SMCG10 SMCJ10C SMCJ10CA marking BFP marking code GGt
Text: SMCG5.0 thru 188CA Vishay Semiconductors formerly General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors d e d n nge e t x E e Ra g a t l Vo DO-215AB SMCG Cathode Band 0.050 (1.27) Dimensions in inches and (millimeters) 0.280 (7.11)
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188CA
DO-215AB
50mVp-p
24-Jul-03
GENERAL SEMICONDUCTOR MARKING bfm
transzorb marking code GEM
GFM 57, TVS
bel 188 transistor
marking ghm
SMCG10
SMCJ10C
SMCJ10CA
marking BFP
marking code GGt
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GFM, TVS
Abstract: transzorb marking code GEM marking code bdu marking code BFK 94 tr/gfx 77
Text: SMCJ5.0 thru 188CA Surface Mount TRANSZORB Transient Voltage Suppressors Stand-off Voltage 5.0 to 188V Peak Pulse Power 1500W DO-214AB SMC J-Bend Cathode Band d e d n nge e t x E e Ra g a t l Vo Mounting Pad Layout 0.245 (6.22) 0.220 (5.59) 0.126 (3.20)
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188CA
DO-214AB
50mVp-p
GFM, TVS
transzorb marking code GEM
marking code bdu
marking code BFK 94
tr/gfx 77
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transzorb marking code GEM
Abstract: gfx 77 TRANSZORB gem 307 GDE gde 103 106 35K 528 156 35K 943 bdw 51 52 GDE TVS gdm 57
Text: SMCJ5.0 thru 188CA Surface Mount TRANSZORB Transient Voltage Suppressors Stand-off Voltage 5.0 to 188V Peak Pulse Power 1500W DO-214AB SMC J-Bend Cathode Band d e d n nge e t x E e Ra g a t l Vo Mounting Pad Layout 0.245 (6.22) 0.220 (5.59) 0.126 (3.20)
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188CA
DO-214AB
DO-214AB
MIL-STD-750,
Metho000
50mVp-p
transzorb marking code GEM
gfx 77
TRANSZORB gem
307 GDE
gde 103
106 35K 528
156 35K 943
bdw 51 52
GDE TVS
gdm 57
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do215
Abstract: ghg junction box SMCJ10C SMCJ10CA gfx 77 BFK 35 GENERAL SEMICONDUCTOR MARKING bfm marking code smc
Text: SMCJ5.0 thru 188CA Vishay Semiconductors formerly General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors DO-214AB SMC J-Bend Cathode Band 0.245 (6.22) 0.220 (5.59) 0.126 (3.20) 0.114 (2.90) d e d n nge e t x E e Ra ag t l o V Stand-off Voltage 5.0 to 188V
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188CA
DO-214AB
DO-214AB
50mVp-p
1-May-02
do215
ghg junction box
SMCJ10C
SMCJ10CA
gfx 77
BFK 35
GENERAL SEMICONDUCTOR MARKING bfm
marking code smc
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Untitled
Abstract: No abstract text available
Text: Advance Product Information VSC7961 Data Sheet FEATURES APPLICATIONS ● +3.3V or +5V Power Supply ● Typical Supply Current of 31mA ● ● SONET/SDH at 155Mb/s, 622Mb/s, 1.244Gb/s, 2.488Gb/s, and 3.125Gb/s Positive Emitter-Coupled Logic Outputs ● Full-Speed Fibre Channel 1.062Gb/s/2.124Gb/s
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VSC7961
100ps
TSSOP-16
155Mb/s,
622Mb/s,
244Gb/s,
488Gb/s,
125Gb/s
062Gb/s/2
124Gb/s)
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MS-026
Abstract: TSSOP-16 VSC7959 VSC7961 VSC7961-W VSC7961YD 10 gb laser diode
Text: Advance Product Information Subject to Change VSC7961 Data Sheet 3.125Gb/s PECL Limiting Amplifier with LOS Detect FEATURES APPLICATIONS ● +3.3V or +5V Power Supply ● Typical Supply Current of 31mA ● ● SONET/SDH at 155Mb/s, 622Mb/s, 1.244Gb/s, 2.488Gb/s, and 3.125Gb/s
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VSC7961
125Gb/s
155Mb/s,
622Mb/s,
244Gb/s,
488Gb/s,
125Gb/s
062Gb/s/2
124Gb/s)
100ps
MS-026
TSSOP-16
VSC7959
VSC7961
VSC7961-W
VSC7961YD
10 gb laser diode
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106 35k. 241
Abstract: marking codes 543 gdt 106 35K Bel 188 bel 188 transistor GGZ 47 ghr 11 SMCG10 SMCJ10C SMCJ10CA
Text: SMCG5.0 thru 188CA Vishay Semiconductors formerly General Semiconductor Surface Mount TRANSZORB Transient Voltage Suppressors d e d n nge e t x E e Ra g a t l Vo DO-215AB SMCG Cathode Band 0.050 (1.27) Dimensions in inches and (millimeters) 0.280 (7.11)
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188CA
DO-215AB
08-Apr-05
106 35k. 241
marking codes 543 gdt
106 35K
Bel 188
bel 188 transistor
GGZ 47
ghr 11
SMCG10
SMCJ10C
SMCJ10CA
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capacitor 391k
Abstract: GSP 2e ASY 22 SERVO flowchart 10K22 S1L9226 capacitor 106 35K LD 8105 S1L9226X01 S1L9226X
Text: PRELIMINARY RF AMP & SERVO SIGNAL PROCESSOR S1L9226X INTRODUCTION 48-LQFP-0707 As a pre-signal & servo signal processor for the DISC-MAN, S1L9226X is a low voltage, low consumption current IC that can read CD-RW, and CD-R discs and can be applied to various products, such as the CDP/VCD/CDMP3 for the DISC-MAN. It is a hard-wired free-adjustment servo, which
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S1L9226X
48-LQFP-0707
S1L9226X
capacitor 391k
GSP 2e
ASY 22
SERVO flowchart
10K22
S1L9226
capacitor 106 35K
LD 8105
S1L9226X01
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R 156 35K 111
Abstract: BDP 283 GHR TVS lt 328 GFz 108 a GEK 56 GFM 57, TVS
Text: G en era l S e m ic o n d u c t o r SMCJ5.0 thru 188CA Surface Mount T r a n s Z o r b ® Transient Voltage Suppressors Stand-off Voltage 5.0to188V Peak Pulse Power 1500W DO-214AB SMC J-Bend ^ C a th o d e Band T Mounting Pad Layout 0.126 (3.20) 0.114(2.90)
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OCR Scan
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188CA
0to188V
DO-214AB
10/1000nsec.
I44UI
R 156 35K 111
BDP 283
GHR TVS
lt 328
GFz 108 a
GEK 56
GFM 57, TVS
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