Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 10N90 Preliminary Power MOSFET 10A, 900V N-CHANNEL POWER MOSFET DESCRIPTION The 10N90 is a N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology allows a minimum on-state
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10N90
UTC10N90
10N90
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utc 3580
Abstract: 10N90
Text: UNISONIC TECHNOLOGIES CO., LTD 10N90 Preliminary 10A, 900V N-CHANNEL POWER MOSFET 1 TO-220 DESCRIPTION The 10N90 is a N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology allows a minimum on-state
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10N90
O-220
UTC10N90
10N90
O-220F1
O-247
QW-R502-502
utc 3580
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utc 3580
Abstract: 10n90 502a
Text: UNISONIC TECHNOLOGIES CO., LTD 10N90 Preliminary 10 Amps, 900 Volts N-CHANNEL POWER MOSFET Power MOSFET 1 TO-220 DESCRIPTION The 10N90 is a N-channel mode Power FET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology allows a minimum on-state
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10N90
O-220
UTC10N90
10N90
O-220F1
O-220
O-220F1
QW-R502-502
utc 3580
502a
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12n90
Abstract: 10N90 4048-A
Text: HiPerFETTM Power MOSFETs IXFH/IXFM 10 N90 IXFH/IXFM 12 N90 Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 900 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 900 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 T C = 25°C 10N90 12N90 10 12
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10N90
12N90
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10N90
4048-A
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utc10n90
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 10N90 Power MOSFET 10A, 900V N-CHANNEL POWER MOSFET DESCRIPTION The 10N90 is a N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology allows a minimum on-state
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10N90
O-247
UTC10N90
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utc 3580
Abstract: 10N90
Text: UNISONIC TECHNOLOGIES CO., LTD 10N90 Power MOSFET 10A, 900V N-CHANNEL POWER MOSFET DESCRIPTION The 10N90 is a N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology allows a minimum on-state
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10N90
UTC10N90
10N90
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10N90
Abstract: No abstract text available
Text: MegaMOSTMFET IXTH 12N90 IXTM 12N90 VDSS = 900 V = 12 A ID25 RDS on = 0.90 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 900 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 900 V VGS Continuous ±20 V VGSM Transient
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Untitled
Abstract: No abstract text available
Text: MegaMOSTMFET IXTH 12N90 IXTM 12N90 VDSS = 900 V ID25 = 12 A RDS on = 0.90 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 900 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 900 V VGS Continuous ±20 V VGSM Transient
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12N90
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O-247
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs IXFH/IXFM 10 N90 IXFH/IXFM 12 N90 IXFH/IXFT 13 N90 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS ID25 RDS on 900 V 900 V 900 V 10 A 12 A 13 A 1.1 Ω 0.9 Ω 0.8 Ω trr ≤ 250 ns TO-247 AD (IXFH) Symbol Test Conditions
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O-247
10N90
12N90
13N90
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C1162
Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158
Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)
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O-247
PLUS247
ISOPLUS247TM
O-204
O-268
O-264
76N06-11
76N06-12
80N06
180N06
C1162
C1280
26n60
60N25
C1328
120N20
C1146
C1104
C1158
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH/IXFM 10 N90 IXFH/IXFM 12 N90 IXFH13 N90 Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 900 900 V V VGS VGSM Continuous
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IXFH13
10N90
12N90
13N90
13N90
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Abstract: No abstract text available
Text: 10N70 UNISONIC TECHNOLOGIES CO., LTD Preliminary Power MOSFET 10A, 700V N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-220F The UTC 10N70 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a
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10N70
O-220F
10N70
O-220F1
QW-R502-572
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sd 20n60
Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
Text: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06
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O-247
PLUS247
ISOPLUS247TM
O-268
O-264
80N06-11
76N07-11
76N07-12
100N10
170N10
sd 20n60
IXFX 44N80
20n80
60n60
9n80
C2625
power mosfet 100n20
IXFH32N50
230N10
8N80
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7n60b
Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3
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AXC-051
AXC-053
AXC-101
AXC-102
AXL-001
AXL-051
AXV-102
142-12io8
142-16io8
19-08ho1
7n60b
35N120u1
ixys dsei 45-12a
DSDI 35-12A
20N80
80n06
80n60
VVY 40-16IO1
IXYS CS 2-12
IXFX 44N80
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs IXFH/IXFM 10 N90 IXFH/IXFM 12 N90 IXFH13 N90 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 900 900 V V VGS VGSM Continuous
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IXFH13
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640 hc v3
Abstract: 12N90
Text: lOIXYS HiPerFET Power MOSFETs IXFH /IXFM 10N90 IXFH /IXFM 12N90 IXFH 13N90 p V DSS ^D25 900 V 900 V 900 V 10 A 12 A 13 A DS on 1.1 Q 0.9 £2 0.8 Q t„rr <250 ns High dv/dt, Low trr, HDMOS™ Family OS Symbol Test Conditions V vDGR Tj =25°Cto150°C Tj =25°Cto150°C;RGS= 1 Mi2
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10N90
12N90
13N90
Cto150
640 hc v3
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mosfet 4400
Abstract: MOSFET 11N80 mosfet 20n60 7n80 20N60 mosfet 4800 mosfet mosfet 4800 circuit 4500 MOS
Text: Power MOSFETs and MOSFET Modules N-Channel Enhancement-Mode HiPerFET Power MOSFETs Standard and MegaMO£ ™FETs HDMOS II Eliminates Tradeoffs The High Performance MOSFET family of Power MOSFETs is designed to provide superior dv/dt performance while eliminating the need for discrete,
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100N10
90N20
73N30
44N50
48N50
36N60
67N10
75N10
42N20
50N20
mosfet 4400
MOSFET 11N80
mosfet 20n60
7n80
20N60 mosfet
4800 mosfet
mosfet 4800 circuit
4500 MOS
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Untitled
Abstract: No abstract text available
Text: □ VDSS MegaMOS FET IXTH/IXTM 10 N90 IXTH/IXTM 12 N90 900 V 900 V ^D25 DS on 10 A 1.10 ß 12 A 0.90 Q N-Channel Enhancement Mode Symbol Test Conditions V DSS T j = 25"C to 150°C 900 VoOB Tj = 25°C to 150°C; RGg = 1 M il 900 V Vos Continuous ±20 V VGSM
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10N90
12N90
12N90
O-247
O-204
O-204
O-247
IXTH10N90
IXTM12N90
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75N1
Abstract: 6n80 IXTM20N60 IRFP 260 M ixfh K 15N60 42N20 ixtn 44N50 KS 4400 204 3B
Text: HiPerF ET Power MOSFETs ?D g UE D f N-Channel Enhancement-Mode with Fast Intrinsic Diode Type V DSS max. ► New ► IXFH 76N07-11 ► IXFH 76N07-12 IXFH IXFH IXFH IXFH IXFH 67N10 75N10 42N20 50N20 58N20 V 70 100 200 IXFH 35N30 IXFH 40N30 300 IXFH IXFH
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76N07-11
76N07-12
67N10
75N10
42N20
50N20
58N20
O-247
O-204
75N1
6n80
IXTM20N60
IRFP 260 M
ixfh
K 15N60
ixtn 44N50
KS 4400
204 3B
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40n80
Abstract: 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI
Text: Alphanumerical Index c CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 io8 23-08 ¡02 23-12 ¡02 23-16 ¡02 300-12 io3 300-16 io3 35-08 ¡04 35-12 ¡04 35-14 ¡04 72-12 ¡08 72-16 ¡08 8-08 ¡02 8-12 ¡02 18 18 18 18 18 18 18 18 18 18 18 18 18
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5-10A
52-14N01
52-16N01
55-12N
55-14N07
55-18N
60-08N
60-16N
62-08N
62-12N
40n80
13NB0
60N60
dsei 20-12
33N120
VUO 35-12 N 0 7
DS117-12A
DS117-12
26n60
4410PI
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ixys ixfn 55n50
Abstract: 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60
Text: i , i - •*.*• - f _ _ , ; . ' x' r < r • Z* i't- y V ' -_ « i W^ | Contents V DSS max ^Otfcont Tc = 2 5 “C □ DS<ön) Tc = 25 °C V A il 60 76 0.011 0.012 200 0.006 76 0.011 0.012 200 0.006 67 75 0.025 0.02 150 0.012 170 0.01
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O-247
O-247
T0-204
O-264
O-264
76N06-11
75N06-12
110N06
76N07-11
76N07-12
ixys ixfn 55n50
170n10
C1106
IXFH26N50
c1124
IXFN170N10
c1120
15N100
76N06
IXFN36n60
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IRFP 260 M
Abstract: 5n100 6n80 42n20 12N50A IRFP IXTN 36N50 C 67N10 irfp 240
Text: Standard Power MOSFETs and MegaMOS FETs N-Channel Enhancement-Mode Tjh = ► New IXTH IXTH IRFP IXTH IXTH IRFP IXTH IXTH IXTH IRFP IXTH IRFP IXTH ► IXTH IXTH IXTH ► IXTH ► IXTU ►IXTU IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH
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67N10
75N10
42N20
50N20
35N30
40N30
12N50A
21N50
24N50
30N50
IRFP 260 M
5n100
6n80
IRFP
IXTN 36N50 C
irfp 240
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IXfk 75 N 50
Abstract: 15N80 50N-2 110N06 n 100N10 110N06 10n90 IXFH40N30 ixfk73n30
Text: HiPerFET Power MOSFETs N-Channel Enhancement-Mode with Fast Intrinsic Diode Type DSS 0 25 DS(on) max. C lss typ. Tc = 25°C New Tc = 25°C n C rss typ. max. qb max. thJC max. D max. pF PF ns nC K/W W IXFH 76N06-11 IXFH 76N06-12 60 76 0.011 0.012 4400
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76N06-11
76N06-12
76N07-11
76N07-12
67N10
75N10
42N20
50N20
50N20S
58N20
IXfk 75 N 50
15N80
50N-2
110N06 n
100N10
110N06
10n90
IXFH40N30
ixfk73n30
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Untitled
Abstract: No abstract text available
Text: HiPerFET Power MOSFETs IXFH/IXFM10 N90 IXFH/IXFM12 N90 IXFH13N90 N-Channel Enhancement Mode High dv/dt, Low t^, HDMOS™ Family Test Conditions Voss Tj = 25°C to 150°C ^ = 25°C to 150°C; RGS = 1 M£2 900 900 V V Continuous Transient ±20 ±30 V V 10
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IXFH/IXFM10
IXFH/IXFM12
IXFH13N90
10N90
12N90
13N90
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