byv32
Abstract: 10A, 100v fast recovery diode power Diode 200V 10A anode common fast recovery diode dual BYV32-200TMF 2A Fast Recovery Diodes DUAL DIODES COMMON ANODE TO220 to-276ab common anode fast to220 fast rectifier common anode
Text: BYV32–50M0 BYV32–100M BYV32–150M BYV32–200M MECHANICAL DATA Dimensions in mm 4.6 0.8 0 .7 6 0 .0 3 0 m in . 1 0 .6 1 3 .5 16.5 3.6 Dia. 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 1 1 3 .7 0 3 .6 0 (0 .1 4 2 ) M a x . 3 1 0 .6 9 (0 .4 2 1 )
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BYV32
BYV32-200SMDCECC
O276AB)
BYV32-200TM
BYV32-200TMF
BYV32-200XM
BYV32-50ASMD
10A, 100v fast recovery diode
power Diode 200V 10A
anode common fast recovery diode dual
2A Fast Recovery Diodes
DUAL DIODES COMMON ANODE TO220
to-276ab
common anode fast to220
fast rectifier common anode
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HUR1630CT
Abstract: No abstract text available
Text: HUR1630CT High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode A C A Dimensions TO-220AB A C A C TAB A=Anode, C=Cathode, TAB=Cathode VRSM V 300 HUR1630CT Symbol VRRM V 300 Test Conditions IFRMS IFAVM TC=130oC; rectangular, d=0.5 IFSM
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HUR1630CT
O-220AB
130oC;
180uH
10kHz;
HUR1630CT
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HUR830
Abstract: No abstract text available
Text: HUR830 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions TO-220AC A C A C C TAB A=Anode, C=Cathode, TAB=Cathode VRSM V 300 HUR830 Symbol VRRM V 300 Test Conditions Dim. A B C D E F G H J K L M N Q Inches Min. Max. 0.500 0.580
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HUR830
O-220AC
130oC;
HUR830
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600v 10A ultra fast recovery diode
Abstract: HUR20100CT fast recovery diode 600v 12A HUR20120CT fast recovery diode 600v 5A
Text: HUR20100CT, HUR20120CT High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode A C A Dimensions TO-220AB A C A C TAB A=Anode, C=Cathode, TAB=Cathode VRSM V 1000 1200 HUR20100CT HUR20120CT Symbol VRRM V 1000 1200 Test Conditions IFRMS IFAVM
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HUR20100CT,
HUR20120CT
O-220AB
HUR20100CT
115oC;
180uH
10kHz;
25oCg.
600v 10A ultra fast recovery diode
HUR20100CT
fast recovery diode 600v 12A
HUR20120CT
fast recovery diode 600v 5A
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HUR1060
Abstract: 100v 20a fast recovery power diode 30v 10a smps
Text: HUR1060 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions TO-220AC A C A C C TAB A=Anode, C=Cathode, TAB=Cathode VRSM V 600 HUR1060 Symbol VRRM V 600 Test Conditions Dim. A B C D E F G H J K L M N Q Inches Min. Max. 0.500 0.580
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HUR1060
O-220AC
135oC;
HUR1060
100v 20a fast recovery power diode
30v 10a smps
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600v 10A ultra fast recovery diode
Abstract: HUR10100 HUR10120
Text: HUR10100, HUR10120 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions TO-220AC A C A C C TAB A=Anode, C=Cathode, TAB=Cathode VRSM V 1000 1200 HUR10100 HUR10120 Symbol VRRM V 1000 1200 Test Conditions Dim. A B C D E F G
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HUR10100,
HUR10120
O-220AC
HUR10100
600v 10A ultra fast recovery diode
HUR10100
HUR10120
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HUR830
Abstract: 10A, 100v fast recovery diode
Text: HUR830 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions TO-220AC A C A C C TAB A=Anode, C=Cathode, TAB=Cathode VRSM V 300 HUR830 Symbol VRRM V 300 Test Conditions Dim. A B C D E F G H J K L M N Q Inches Min. Max. 0.500 0.580
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HUR830
O-220AC
130oC;
HUR830
10A, 100v fast recovery diode
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HUR2060CT
Abstract: No abstract text available
Text: HUR2060CT High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode A C A Dimensions TO-220AB A C A C TAB A=Anode, C=Cathode, TAB=Cathode VRSM V 600 HUR2060CT Symbol VRRM V 600 Test Conditions IFRMS IFAVM TC=135oC; rectangular, d=0.5 IFSM
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HUR2060CT
O-220AB
135oC;
180uH
10kHz;
HUR2060CT
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PDF
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600v 10A ultra fast recovery diode
Abstract: fast recovery diode 600v 12A HUR20100CT 10A, 100v fast recovery diode 10a ultra fast diode HUR20120CT fast recovery diode 600v 5A ultra fast recovery time diode
Text: HUR20100CT, HUR20120CT High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode A C A Dimensions TO-220AB A C A C TAB A=Anode, C=Cathode, TAB=Cathode VRSM V 1000 1200 HUR20100CT HUR20120CT Symbol VRRM V 1000 1200 Test Conditions IFRMS IFAVM
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HUR20100CT,
HUR20120CT
O-220AB
HUR20100CT
180uH
10kHz;
54Dynamic
600v 10A ultra fast recovery diode
fast recovery diode 600v 12A
HUR20100CT
10A, 100v fast recovery diode
10a ultra fast diode
HUR20120CT
fast recovery diode 600v 5A
ultra fast recovery time diode
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sonic cleaner
Abstract: HUR2060CT
Text: HUR2060CT High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode A C A Dimensions TO-220AB A C A C TAB A=Anode, C=Cathode, TAB=Cathode VRSM V 600 HUR2060CT Symbol VRRM V 600 Test Conditions IFRMS IFAVM TC=135oC; rectangular, d=0.5 IFSM
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HUR2060CT
O-220AB
180uH
10kHz;
sonic cleaner
HUR2060CT
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PDF
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HUR1630CT
Abstract: No abstract text available
Text: HUR1630CT High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode A C A Dimensions TO-220AB A C A C TAB A=Anode, C=Cathode, TAB=Cathode VRSM V 300 HUR1630CT Symbol VRRM V 300 Test Conditions IFRMS IFAVM TC=130oC; rectangular, d=0.5 IFSM
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HUR1630CT
O-220AB
180uH
10kHz;
HUR1630CT
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PDF
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smps high power
Abstract: HUR1060
Text: HUR1060 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions TO-220AC A C A C C TAB A=Anode, C=Cathode, TAB=Cathode VRSM V 600 HUR1060 Symbol VRRM V 600 Test Conditions Dim. A B C D E F G H J K L M N Q Inches Min. Max. 0.500 0.580
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HUR1060
O-220AC
135oC;
smps high power
HUR1060
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HUR830S
Abstract: 10a ultra fast diode 5a ultra fast diode
Text: HUR830S High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions TO-263 D2PAK C(TAB) A C A NC A=Anode, NC= No connection, TAB=Cathode VRSM V 300 HUR830S Symbol VRRM V 300 Test Conditions 1. 2. 3. 4. Gate Collector Emitter Collector
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HUR830S
O-263
HUR830S
10a ultra fast diode
5a ultra fast diode
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600v 10A ultra fast recovery diode
Abstract: sonic cleaner HUR10100 HUR10120 fast recovery diode 600v 5A 600v 10A ultra fast recovery diode to-220ac ultra fast recovery time diode
Text: HUR10100, HUR10120 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions TO-220AC A C A C C TAB A=Anode, C=Cathode, TAB=Cathode VRSM V 1000 1200 HUR10100 HUR10120 Symbol VRRM V 1000 1200 Test Conditions Dim. A B C D E F G
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Original
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HUR10100,
HUR10120
O-220AC
HUR10100
600v 10A ultra fast recovery diode
sonic cleaner
HUR10100
HUR10120
fast recovery diode 600v 5A
600v 10A ultra fast recovery diode to-220ac
ultra fast recovery time diode
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PDF
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10a ultra fast diode
Abstract: HUR830S
Text: HUR830S High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions TO-263 D2PAK C(TAB) A C A NC A=Anode, NC= No connection, TAB=Cathode VRSM V 300 HUR830S Symbol VRRM V 300 Test Conditions 1. 2. 3. 4. Gate Collector Emitter Collector
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HUR830S
O-263
10a ultra fast diode
HUR830S
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Untitled
Abstract: No abstract text available
Text: AOTF10N50FD 500V, 10A N-Channel MOSFET with Fast Recovery Diode General Description Product Summary The AOTF10N50FD has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS on , Ciss
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AOTF10N50FD
AOTF10N50FD
AOTF10N50FDL
O-220F
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Diode 400V 5A
Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM
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2C415
2C425
2C444
2C746
2N1131L
2N1132
2N1132CSM
2N1132DCSM
2N1208
2N1209
Diode 400V 5A
lm1083
BZY55C
transistor 2n1208
bc109 spice
IRF9024
CV7404
mnt6337j
sml1258
SML1004RGN
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jrc 5532
Abstract: jrc 5534 as4558 audio amplifier 4558 12v electronic transformer RECTIFIER 5532 JRC 4558 JRC JRC4558 bridge rectifier 12V 1A jrc 4558
Text: NIEC’s SBD and FRED for Audio Nihon Inter Electronics Corporation NIEC is a major manufacturer of Schottky Barrier Diode (SBD) and Fast Recovery Epitaxial Diode (FRED). Thanks to low dissipation, fast switching, and low noise characteristics, these fast switching diodes are widely used in Switching Mode Power Supply (SMPS) all over the
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FSQ05A04
jrc 5532
jrc 5534
as4558
audio amplifier 4558
12v electronic transformer RECTIFIER
5532 JRC
4558 JRC
JRC4558
bridge rectifier 12V 1A
jrc 4558
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k07n120
Abstract: Q67040-S4280 PG-TO-247-3 SKW07N120
Text: SKW07N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • Lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers:
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SKW07N120
SKW07N120
k07n120
Q67040-S4280
PG-TO-247-3
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RF2001T2D
Abstract: No abstract text available
Text: RF2001T2D Data Sheet Fast recovery diode RF2001T2D Applications General rectification Dimensions Unit : mm Structure 4.5±0.3 0.1 2.8±0.2 0.1 10.0±0.3 0.1 5.0±0.2 ① 13.5MIN 1.2 Construction Silicon epitaxial planar
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RF2001T2D
O-220)
O220FN
60Hz/1cyc)
200pF
100pF
R1120A
RF2001T2D
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Untitled
Abstract: No abstract text available
Text: Data Sheet Fast recovery diode RF2001T2D Applications General rectification Dimensions Unit : mm Structure 4.5±0.3 0.1 2.8±0.2 0.1 10.0±0.3 0.1 Features 1) Cathode common type. (TO-220) 2) Ultra Low V F 3) Very fast recovery
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RF2001T2D
O-220)
O220FN
current25
200pF
100pF
R1120A
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET F S 1 O A S J -2 HIGH-SPEED SWITCHING USE FS1 OASJ-2 ' 4V DRIVE ' V d s s . ' rDS ON (MAX) . ' Id . ' Integrated Fast Recovery Diode (TYP.) . 100V . 0.190 .10A 95ns APPLICATION
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10A, 100v fast recovery diode
Abstract: No abstract text available
Text: -Jülitron ra@ y Tr ©¿aim©« Devices. Inc. MEDIUM VOLTAGE, FAST RECOVERY CHIP NUMBER PN EPITAXIAL FAST RECOVERY PLANAR POWER DIODE CONTACT METALLIZATION Anode: > 50,000 Â Aluminum Cathode: Gold Polished silicon or “Chrome Nickel Silver" also available
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305mm)
18moe
C-126
10A, 100v fast recovery diode
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75 ns 75
Abstract: SOLITRON DEVICES
Text: 8368602 SOLITRON DEVICES INC _ 9 5D ÌS Ä¥Ä L@(i 02917 D E|fl3bflt:D 2 D 7"- □ □ □ 2 CU 7 àJ - / ? □ | MEDIUM VOLTAGE, FAST RECOVERY Devices, Inc CHIP NUMBER PN EPITAXIAL FAST RECOVERY PLANAR POWER DIODE CONTACT METALLIZATION Anode: > 50,000  Aluminum
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OCR Scan
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305mm)
C-126
75 ns 75
SOLITRON DEVICES
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