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    10A 600A DC DIODE Search Results

    10A 600A DC DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MGN1S1208MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-8V GAN Visit Murata Manufacturing Co Ltd
    MGN1D120603MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-6/-3V GAN Visit Murata Manufacturing Co Ltd
    MGN1S1212MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-12V GAN Visit Murata Manufacturing Co Ltd
    MGN1S0508MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 5-8V GAN Visit Murata Manufacturing Co Ltd
    MGN1S0512MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 5-12V GAN Visit Murata Manufacturing Co Ltd

    10A 600A DC DIODE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    k08T120

    Abstract: No abstract text available
    Text: IKW08T120 TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • Approx. 1.0V reduced VCE sat and 0.5V reduced VF compared to BUP305D


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    IKW08T120 BUP305D k08T120 PDF

    Untitled

    Abstract: No abstract text available
    Text: IKP10N60T p TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C


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    IKP10N60T PDF

    k08T120

    Abstract: IKW08T120 BUP305D PG-TO-247-3 diode of 5a 5v 10kHz RG81 mj04
    Text: IKW08T120 TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • Approx. 1.0V reduced VCE sat and 0.5V reduced VF compared to BUP305D


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    IKW08T120 BUP305D k08T120 IKW08T120 BUP305D PG-TO-247-3 diode of 5a 5v 10kHz RG81 mj04 PDF

    Untitled

    Abstract: No abstract text available
    Text: TRENCHSTOP Series IKP10N60T p Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Features: • Very low VCE sat 1.5V (typ.)  Maximum Junction Temperature 175°C  Short circuit withstand time 5s


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    IKP10N60T PDF

    K10T60

    Abstract: IKP10N60T PG-TO-220-3-1 fast recovery diode 1000v 10A
    Text: IKP10N60T p TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C


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    IKP10N60T K10T60 IKP10N60T PG-TO-220-3-1 fast recovery diode 1000v 10A PDF

    Untitled

    Abstract: No abstract text available
    Text: TRENCHSTOP Series IKB10N60T p Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Features: • Very low VCE sat 1.5V (typ.)  Maximum Junction Temperature 175°C  Short circuit withstand time 5s


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    IKB10N60T PDF

    Untitled

    Abstract: No abstract text available
    Text: IKB10N60T p TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled 3 diode C •           Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C


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    IKB10N60T PDF

    Untitled

    Abstract: No abstract text available
    Text: IKA10N60T TRENCHSTOP Series Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Features: • Very low VCE sat 1.5V (typ.)  Maximum Junction Temperature 175°C  Short circuit withstand time 5s


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    IKA10N60T PDF

    Untitled

    Abstract: No abstract text available
    Text: IKW15T120 TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • Approx. 1.0V reduced VCE sat and 0.5V reduced VF compared to BUP313D


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    IKW15T120 BUP313D PDF

    k10t60

    Abstract: diode 10a 400v fast recovery diode 600v 12A IKA10N60T fast recovery diode 1a trr 200ns 10A 600A DC diode IGBT DRIVE 50V 300A diode 400V 4A 600v 75a fast recovery diode 1000v 10A
    Text: IKA10N60T TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode Features • Very low VCE sat 1.5 V (typ.) • Maximum Junction Temperature 175°C • Short circuit withstand time – 5µs


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    IKA10N60T PG-TO-220-3-31 O-220 k10t60 diode 10a 400v fast recovery diode 600v 12A IKA10N60T fast recovery diode 1a trr 200ns 10A 600A DC diode IGBT DRIVE 50V 300A diode 400V 4A 600v 75a fast recovery diode 1000v 10A PDF

    k10t60

    Abstract: No abstract text available
    Text: IKA10N60T TrenchStop Series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode Features • Very low VCE sat 1.5 V (typ.) • Maximum Junction Temperature 175°C • Short circuit withstand time – 5µs


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    IKA10N60T k10t60 PDF

    Untitled

    Abstract: No abstract text available
    Text: IKA10N60T TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode Features • Very low VCE sat 1.5 V (typ.) • Maximum Junction Temperature 175°C • Short circuit withstand time – 5µs


    Original
    IKA10N60T PDF

    Untitled

    Abstract: No abstract text available
    Text: IKA10N60T TrenchStop Series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode • • • • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175°C


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    IKA10N60T PDF

    k10t60

    Abstract: Q67040S4681 Q67040S4682 30A20V fast recovery diode 1000v 10A IKP10N60T K10T60 IKB10N60T IKP10N60T SWITCHING DIODE 600V 2A Q67040-S4681
    Text: IKP10N60T IKB10N60T TrenchStop Series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C


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    IKP10N60T IKB10N60T P-TO-220-3-1 O-220AB) Oct-04 k10t60 Q67040S4681 Q67040S4682 30A20V fast recovery diode 1000v 10A IKP10N60T K10T60 IKB10N60T IKP10N60T SWITCHING DIODE 600V 2A Q67040-S4681 PDF

    MJ-06

    Abstract: Q67040-S4681
    Text: IKB10N60T p TrenchStop Series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C


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    IKB10N60T MJ-06 Q67040-S4681 PDF

    K15T120

    Abstract: K15T120 igbt IKW15T120 BUP313D PG-TO-247-3
    Text: IKW15T120 TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • Approx. 1.0V reduced VCE sat and 0.5V reduced VF compared to BUP313D


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    IKW15T120 BUP313D K15T120 K15T120 igbt IKW15T120 BUP313D PG-TO-247-3 PDF

    K08T120

    Abstract: PG-TO-247-3-21 k08t12 5M MARKING CODE DIODE 5A 100V IKW08T120
    Text: IKW08T120 TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • Short circuit withstand time – 10µs Designed for : - Frequency Converters


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    IKW08T120 K08T120 PG-TO-247-3-21 k08t12 5M MARKING CODE DIODE 5A 100V IKW08T120 PDF

    IKP10N60T

    Abstract: IKP10N60T IGBT k10t60
    Text: IKP10N60T p TrenchStop Series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C


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    IKP10N60T PG-TO-220-3-1 O-220AB) IKP10N60T IGBT k10t60 PDF

    Untitled

    Abstract: No abstract text available
    Text: IKB10N60T p TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon 3 diode C • • • • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C


    Original
    IKB10N60T PDF

    k10t60

    Abstract: No abstract text available
    Text: IKP10N60T p TrenchStop Series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C


    Original
    IKP10N60T PG-TO-220-3-1 k10t60 PDF

    Untitled

    Abstract: No abstract text available
    Text: IKP20N60T TRENCHSTOP Series Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C Features: • Very low VCE sat 1.5V (typ.)  Maximum Junction Temperature 175°C  Short circuit withstand time 5s


    Original
    IKP20N60T PDF

    Untitled

    Abstract: No abstract text available
    Text: IKW20N60T TRENCHSTOP Series Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C Features: • Very low VCE sat 1.5V (typ.)  Maximum Junction Temperature 175°C  Short circuit withstand time 5s


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    IKW20N60T PDF

    H20T120

    Abstract: IHW20T120 2R210 rg-35
    Text: IHW20T120 Soft Switching Series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode • • • • • • • • C Short circuit withstand time – 10µs Designed for : - Soft Switching Applications


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    IHW20T120 H20T120 IHW20T120 2R210 rg-35 PDF

    k10t60

    Abstract: No abstract text available
    Text: IKP10N60T p TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C


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    IKP10N60T k10t60 PDF