GF1G
Abstract: DO-214BA JESD22-B102D J-STD-002B
Text: GF1A thru GF1M Vishay General Semiconductor Surface Mount Glass Passivated Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 50 V to 1000 V IFSM 30 A VF 1.1 V, 1.2 V IR 5.0 µA Tj max. 175 °C ed* t n e Pat * Glass-plastic encapsulation technique is covered by patent
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Original
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DO-214BA
MIL-S-19ed
08-Apr-05
GF1G
DO-214BA
JESD22-B102D
J-STD-002B
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PDF
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Untitled
Abstract: No abstract text available
Text: BAV70-V Vishay Semiconductors Small Signal Switching Diode, Dual Features • Silicon Epitaxial Planar Diode • Fast switching dual diode with common e3 cathode • This diode is also available in other configurations including:a dual common anode to cathode with type designation BAV99-V, a dual
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Original
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BAV70-V
BAV99-V,
BAW56-V,
BAL99-V.
2002/95/EC
2002-96/EC
OT-23
BAV70-V
BAV70-V-GS18s
08-Apr-05
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PDF
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Untitled
Abstract: No abstract text available
Text: BYV26DGP & BYV26EGP Vishay General Semiconductor Glass Passivated Ultrafast Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 800 V, 1000 V IFSM 30 A trr 75 ns VF 1.3 V Tj max. 175 °C ed* t n e Pat DO-204AC (DO-15) * Glass Encapsulation technique is covered by
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Original
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BYV26DGP
BYV26EGP
DO-204AC
DO-15)
MIL-S-19500
DO-204AC,
UL-94V-0
10-Aug-05
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PDF
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EGP20A
Abstract: EGP20D EGP20B EGP20C
Text: EGP20A thru EGP20G Vishay General Semiconductor Glass Passivated Ultrafast Rectifier Major Ratings and Characteristics IF AV 2.0 A VRRM 50 V to 400 V IFSM 75 A trr 50 ns VF 0.95 V, 1.25 V Tj max. 150 °C d* e t n Pate DO-204AC (DO-15) * Glass Encapsulation
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Original
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EGP20A
EGP20G
DO-204AC
DO-15)
DO-204AC,
UL-94V-0
10-Aug-05
50mVp-p
EGP20D
EGP20B
EGP20C
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PDF
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BAV99V
Abstract: JE MARKING BAV99-V BAV99-V-GS08
Text: BAV99-V Vishay Semiconductors Small Signal Switching Diode, Dual Features • Fast switching speed • High conductance e3 • Surface mount package ideally suited for automatic insertion • Connected in series • Lead Pb -free component • Component in accordance to RoHS 2002/95/EC
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Original
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BAV99-V
2002/95/EC
2002/96/EC
OT-23
BAV99-V
BAV99-V-GS18
BAV99-V-GS08
D-74025
10-Aug-05
BAV99V
JE MARKING
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PDF
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Untitled
Abstract: No abstract text available
Text: FGP50B thru FGP50D Vishay Semiconductors Glass Passivated Ultrafast Rectifier Major Ratings and Characteristics 5.0 A 100 V to 200 V IFSM 135 A trr 35 ns VF 0.95 V IR 5.0 µA Tj max. 175 °C Features • • • • • • • • ted* n e t Pa GP20 *Glass Encapsulation
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Original
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FGP50B
FGP50D
MIL-S-19500
10-Aug-05
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PDF
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EGP10B
Abstract: EGP10G
Text: EGP10A thru EGP10G Vishay Semiconductors Glass Passivated Ultrafast Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 50 V to 200 V IFSM 30 A trr 50 ns VF 0.95 V, 1.25 V Tj max. 150 °C ed* t n e Pat *Glass Encapsulation technique is covered by
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Original
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EGP10A
EGP10G
DO-204AL
DO-41)
DO-204AL,
UL-94V-0
10-Aug-05
EGP10B
EGP10G
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PDF
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FGP10B
Abstract: FGP10D
Text: FGP10B thru FGP10D Vishay Semiconductors Glass Passivated Ultrafast Rectifier Major Ratings and Characteristics 1.0 A VRRM 100 V to 200 V IFSM 30 A trr 35 ns VF 0.95 V IR 2.0 µA Tj max. 175 °C Features • • • • • • • ed* t n e Pat *Glass Encapsulation
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Original
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FGP10B
FGP10D
DO-204AL
DO-41)
MIL-S-19500
10-Aug-05
FGP10D
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PDF
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GP20
Abstract: JESD22-B102D J-STD-002B
Text: FGP50B thru FGP50D New Product Vishay General Semiconductor Glass Passivated Ultrafast Rectifier Major Ratings and Characteristics IF AV 5.0 A VRRM 100 V to 200 V IFSM 135 A trr 35 ns VF 0.95 V IR 5.0 µA Tj max. 175 °C ted* n e t Pa GP20 *Glass Encapsulation
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Original
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FGP50B
FGP50D
UL-94V-0
J-STD-002B
JESD22-B102D
08-Apr-05
GP20
JESD22-B102D
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PDF
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FGP20B
Abstract: No abstract text available
Text: FGP20B thru FGP20D New Product Vishay General Semiconductor Glass Passivated Ultrafast Rectifier Major Ratings and Characteristics IF AV 2.0 A VRRM 100 V to 200 V IFSM 50 A trr 35 ns VF 0.95 V IR 2.0 µA Tj max. 175 °C ted* n e t Pa DO-204AC (DO-15) * Glass Encapsulation
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Original
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FGP20B
FGP20D
DO-204AC
DO-15)
MIL-S-19500
DO-204AC,
UL-94V-s
08-Apr-05
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PDF
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BAV99-V
Abstract: No abstract text available
Text: BAV99-V Vishay Semiconductors Small Signal Switching Diode, Dual Features • Fast switching speed • High conductance e3 • Surface mount package ideally suited for automatic insertion • Connected in series • Lead Pb -free component • Component in accordance to RoHS 2002/95/EC
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Original
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BAV99-V
2002/95/EC
2002/96/EC
OT-23
BAV99-V
BAV99-V-GS18
BAV99-V-GS08
08-Apr-05
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PDF
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ES2F
Abstract: No abstract text available
Text: ES2F & ES2G Vishay General Semiconductor Surface Mount Ultrafast Plastic Rectifier Major Ratings and Characteristics IF AV 2.0 A VRRM 300 V, 400 V IFSM 50 A trr 35 ns VF 1.1 V Tj max. 150 °C DO-214AA (SMB) Features Mechanical Data • • • • • •
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Original
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DO-214AA
J-STD-020C
J-STD-002B
JESD22-B102D
08-Apr-05
ES2F
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PDF
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BAS16-V-GS08
Abstract: A6 MARKING
Text: BAS16-V Vishay Semiconductors Small Signal Fast Switching Diode Features • Silicon Epitaxial Planar Diode • Ultra fast switching speed e3 • Surface mount package ideally suited for automatic insertion • High conductance • Lead Pb -free component
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Original
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BAS16-V
2002/95/EC
2002/96/EC
OT-23
BAS16-V
BAS16-V-GS18
D-74025
10-Aug-05
BAS16-V-GS08
A6 MARKING
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PDF
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Untitled
Abstract: No abstract text available
Text: BYM12-50 thru BYM12-400, EGL41A thru EGL41G Vishay General Semiconductor Surface Mount Glass Passivated Ultrafast Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 50 V to 400 V IFSM 30 A trr 50 ns VF 1.0 V, 1.25 V Tj max. 175 °C ed* t n e
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Original
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BYM12-50
BYM12-400,
EGL41A
EGL41G
DO-213AB
MIL-S-19500
J-STD-020C
DO-213AB,
10-Aug-05
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PDF
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DO-214BA
Abstract: JESD22-B102D J-STD-002B VISHAY MARKING RJ
Text: RGF1A thru RGF1M Vishay General Semiconductor Surface Mount Glass Passivated Junction Fast Switching Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 50 V to 1000 V IFSM 30 A VF 1.3 V trr 150 ns, 250 ns, 500 ns Tj max. 175 °C ed* t n e Pat
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Original
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DO-214BA
08-Apr-05
DO-214BA
JESD22-B102D
J-STD-002B
VISHAY MARKING RJ
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PDF
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EGP30A
Abstract: No abstract text available
Text: EGP30A thru EGP30G Vishay General Semiconductor Glass Passivated Ultrafast Rectifier Major Ratings and Characteristics IF AV 3.0 A VRRM 50 V to 400 V IFSM 125 A trr 50 ns VF 0.95 V, 1.25 V Tj max. 150 °C d* e t n Pate GP20 *Glass Encapsulation technique is covered by
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Original
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EGP30A
EGP30G
UL-94V-0
J-STD-002B
JESD22-B102D
08-Apr-05
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PDF
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Vishay nobel
Abstract: KISD-6 Vishay nobel kisd load cell kis- 1-50 KN KISD load cell load cell kis- 1 KN load cell kis- 3
Text: Model KISD-6 Vishay Nobel Load Cell FEATURES • Capacity range: 50, 100, 200, 400, and 1000kN 11.2K, 22.5K, 45K, 90K, and 225K lb • Cylindrical shape for easy installation • High accuracy • ATEX approved for hazardous areas • High overload capacity
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Original
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1000kN
08-Apr-05
Vishay nobel
KISD-6
Vishay nobel kisd
load cell kis- 1-50 KN
KISD
load cell
load cell kis- 1 KN
load cell kis- 3
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PDF
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MARKING V32 SOT23
Abstract: BZT52C-V marking v6 zener diode zener diode Marking code v3 sod-123 single zener diode marking V14
Text: DZ23-V-Series Vishay Semiconductors Small Signal Zener Diodes, Dual Features • These diodes are available in other case styles and configurations including: the dual diode common anode configuration e3 with type designation AZ23, the single diode SOT-23 case with the type designation
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Original
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DZ23-V-Series
OT-23
BZX84C-V,
OD-123
BZT52C-V.
08-Apr-05
MARKING V32 SOT23
BZT52C-V
marking v6 zener diode
zener diode Marking code v3 sod-123
single zener diode marking V14
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PDF
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Untitled
Abstract: No abstract text available
Text: 7 THIS DRAWING IS UN PUBLISHED. COPYRIGHT 200 6 5 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. A L L RIGHTS LOC RESERVED. R E V IS IO N S DIST GP 00 LTR DESCRIPTIO N REL. AS PER EC 0 S 1 3 - 0 1 3 1 - 0 5 DATE DWN APVD 10AUG05 BL JG D D
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OCR Scan
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10AUG05
31MAR2000
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PDF
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Untitled
Abstract: No abstract text available
Text: 4 8 THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED BY TYCO ELECTRONICS CORPORATION. FOR PUBLICATION - - A LL RIGHTS RESERVED. GP REVISIO NS 00 DESCRIPTION [. -20 + 0 . 2 787 0 0 8 +. REL. AS PER EC 0 S 1 3 - 0 1 3 1 - 0 5 BL 10AUG05 JG MATERIAL: HOUSING - NYLON MOLDING COMPOUND,
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OCR Scan
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10AUG05
31MAR2000
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PDF
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bt 2328
Abstract: 4-40 UNC-2B
Text: r 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 4 5 6 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. DIST LOC R E VIS IO N S GP 00 ALL RIGHTS RESERVED. LTR B L 7 .8 0 - 8 .0 5 [.3 1 2 + . 0 0 5 ] D . TERMINAL 1 IS LOCATED 5 5 5 2 7 2 6 - 1 ONLY.
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OCR Scan
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ECO-08-007327
08APR08
76/xm
05/xm
10AUG05
31MAR2000
bt 2328
4-40 UNC-2B
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PDF
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Untitled
Abstract: No abstract text available
Text: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 6 4 ALL RIGHTS RESERVED. D i— LOC DIST AD 00 [3] L 1 [3] [3] 1 [3] [3] [3] [3] 1 [3] [3] 1 [3] [3] 1 [3] [3] 1 [3] [3] 1 [3] [3] L 1 [3] [3] 1 [3] [3] -1“ [3] [3] [3] [3] L L c^i -CJ-
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OCR Scan
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07APR06
31MAR2000
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PDF
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AS11D
Abstract: No abstract text available
Text: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 6 5 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. REVISIONS LOC DIST CM 54 LTR H M A T E R IA L: H O U S IN G : T H E R M O P L A S T IC POST: C O P P E R ALLO Y PO LYESTER, G LASS
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OCR Scan
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10AUG05
210CT96
TA-156
31MAR2000
AS11D
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PDF
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Untitled
Abstract: No abstract text available
Text: 6 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. REVISIONS D IS T GP 00 LTR B TYPICAL GROUNDING PAD 0 .0 3 2 + .003 -.001 2X SHIELD DWN BM WM 09A P R 08 REVISED PER E C O -08- 007327
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OCR Scan
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ECO-08-007327
09APR08
10AUG05
31MAR2000
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PDF
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