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    10AUG2006 Search Results

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    Catalog Datasheet MFG & Type Document Tags PDF

    STTH

    Abstract: AV900
    Text: STTH8L06 Turbo 2 ultrafast high voltage rectifier Features K • Ultrafast switching ■ Low reverse recovery current ■ Low thermal resistance ■ Reduces switching and conduction losses ■ Package insulation voltage: – TO-220AC Ins: 2500 V rms – TO-220FPAC: 2000 V DC


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    STTH8L06 O-220AC O-220FPAC: STTH8L06D O-220FPAC STTH8L06FP STTH8L06, STTH8L06G STTH AV900 PDF

    STTH30

    Abstract: No abstract text available
    Text: STTH30L06 Turbo 2 ultrafast high voltage rectifier Features • Ultrafast switching ■ Low reverse current ■ Low thermal resistance ■ K A Reduces switching and conduction losses D2PAK STTH30L06G Description The STTH30L06, which is using ST Turbo 2 600 V


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    STTH30L06 STTH30L06, STTH30L06G DO-247 STTH30L06W STTH30 PDF

    block code error management, verilog source code

    Abstract: NAND01GW3A2B-KGD NAND01GW4A2B-KGD NAND01GWxA2B-KGD
    Text: NAND01GW3A2B-KGD NAND01GW4A2B-KGD Known Good Die, 1Gbit x8/x16 , 528 Byte/264 Word Page, 3V, NAND Flash Memory Features • High density NAND Flash memory – 1 Gbit memory array – 32 Mbit spare area – Cost effective solutions for mass storage applications


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    NAND01GW3A2B-KGD NAND01GW4A2B-KGD x8/x16) Byte/264 block code error management, verilog source code NAND01GW3A2B-KGD NAND01GW4A2B-KGD NAND01GWxA2B-KGD PDF

    STTH12R06G

    Abstract: STTH12R06G-TR STTH12R06 STTH12R066G-TR STTH12R06D STTH12R06DI STTH12R06DIRG STTH12R06FP T125
    Text: STTH12R06 Turbo 2 ultrafast high voltage rectifier Main product characteristics IF AV 12 A VRRM 600 V IRM (typ) 7A Tj 175° C VF (typ) 1.4 V trr (max) 25 ns K K A TO-220AC STTH12R06D A K TO-220FPAC STTH12R06FP Features and benefits K • Ultrafast switching


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    STTH12R06 O-220AC STTH12R06D O-220FPAC STTH12R06FP O220AC O-220FPAC: STTH12R06, STTH12R06G STTH12R06G-TR STTH12R06 STTH12R066G-TR STTH12R06D STTH12R06DI STTH12R06DIRG STTH12R06FP T125 PDF

    p50ne1

    Abstract: No abstract text available
    Text: STP50NE10 N-channel 100V - 0.021Ω - 50A TO-220 STripFET Power MOSFET General features Type VDSS RDS on ID STP50NE10 100V <0.027Ω 50A ) s ( t c u d o ) r s ( P Description t c e t u e d l o o r s Internal schematic diagram P b e O t e l ) o s ( s t


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    STP50NE10 O-220 p50ne1 PDF

    Untitled

    Abstract: No abstract text available
    Text: STTH12R06 Turbo 2 ultrafast high voltage rectifier Features • Ultrafast switching ■ Low reverse recovery current ■ Low thermal resistance ■ Reduces switching losses ■ Package insulation voltage: TO220AC ins: 2500 VRMS TO-220FPAC: 2000 VDC K K A A


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    STTH12R06 O220AC O-220FPAC: O-220AC STTH12R06D O-220FPAC STTH12R06FP STTH12R06 STTH12R06G O-220AC PDF

    SOT23-5 MARKING V4

    Abstract: opa 275
    Text: OPA643 OP OPA 643 A64 OPA 3 658 Wideband Low Distortion, High Gain OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● LOW DISTORTION: –90dBc at 5MHz ● LOW NOISE: 2.3nV/√Hz ● GAIN-BANDWIDTH PRODUCT: 800MHz ● BASE STATION ADC PREAMP ● ADC/DAC BUFFER AMPLIFIER


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    OPA643 90dBc 800MHz OT23-5 OPA643 SOT23-5 MARKING V4 opa 275 PDF

    LVDS to MIPI DSI

    Abstract: MIPI DSI to lvds mipi DSI LCD controller MDDI to MIPI datasheet ci 666 MIPI Specification MIPI DSI MIPI DSI lvds MIPI DSI Device Controller 4F2 diode
    Text: DSILC6-4xx ESD Protection for high speed interface Main applications I/O3 VCC Where transient over-voltage protection in ESD sensitive equipment is required, such as: • ■ ■ ■ ■ I/O4 I/O2 GND I/O1 Computers Printers Communication systems Cell phone handsets and accessories


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    OT-666 OT-666 LVDS to MIPI DSI MIPI DSI to lvds mipi DSI LCD controller MDDI to MIPI datasheet ci 666 MIPI Specification MIPI DSI MIPI DSI lvds MIPI DSI Device Controller 4F2 diode PDF

    STW4N150

    Abstract: STP4N150 TO-247 st 0560 L30 diode part marking st 393 STMicroelectronics DIODE marking code JESD97 W4N150
    Text: STP4N150 STW4N150 N-channel 1500V - 5Ω - 4A - TO-220/TO-247 Very high PowerMESH Power MOSFET General features Type VDSS @Tjmax RDS(on) ID STP4N150 1500 V <7Ω 4A STW4N150 1500 V <7Ω 4A • Avalanche ruggedness ■ Gate charge minimized ■ Very low intrinsic capacitances


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    STP4N150 STW4N150 O-220/TO-247 O-220 O-247 STW4N150 STP4N150 TO-247 st 0560 L30 diode part marking st 393 STMicroelectronics DIODE marking code JESD97 W4N150 PDF

    STP4N150

    Abstract: 4N150 STFW4N150 STW4N150 W4N150
    Text: STFW4N150 STP4N150, STW4N150 N-channel 1500 V, 5 Ω, 4 A, PowerMESH Power MOSFET TO-220, TO-247, TO-3PF Features Type VDSS RDS on max ID 1500 V <7Ω 4A STP4N150 1500 V <7Ω 4A STW4N150 1500 V <7Ω 4A STFW4N150 (1) 3 1 2 2 TO-220 TO-247 1. All data which refers solely to the TO-3PF package is


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    STFW4N150 STP4N150, STW4N150 O-220, O-247, STP4N150 O-220 O-247 STP4N150 4N150 STFW4N150 STW4N150 W4N150 PDF

    F3HNK90Z

    Abstract: P3HNK90Z STP3HNK90Z JESD97 STF3HNK90Z
    Text: STP3HNK90Z STF3HNK90Z N-channel 900V - 0.35Ω - 3A - TO-220 - TO-220FP Zener-protected SuperMESH Power MOSFET General features Type VDSS @Tjmax RDS(on) ID STP3HNK90Z 900 V < 0.42 Ω 3A STP3HNK90Z 900 V < 0.42 Ω 3A 3 • Extremely high dv/dt capability


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    STP3HNK90Z STF3HNK90Z O-220 O-220FP O-220 F3HNK90Z P3HNK90Z STP3HNK90Z JESD97 STF3HNK90Z PDF

    STLC2590

    Abstract: E-STLC2590 fm radio control interface BT-12
    Text: STLC2590 Bluetooth EDR and RDS FM radio tuner Data Brief Bluetooth features • The lowest power consumption by design and technology see Table 1 ■ World best EDR throughput (see Table 1) ■ World most performing BT-WLAN coexistence support for several BT-WLAN coexistence


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    STLC2590 STLC2590 E-STLC2590 fm radio control interface BT-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: ADS5444 www.ti.com SLWS162A – AUGUST 2005 – REVISED FEBRUARY 2006 13-BIT 250 MSPS ANALOG-TO-DIGITAL CONVERTER FEATURES APPLICATIONS • • • • • • • • • • • • • • • • • • • • 13-Bit Resolution 250 MSPS Sample Rate SNR = 69 dBc at 100-MHz IF and 250 MSPS


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    ADS5444 SLWS162A 13-BIT 100-MHz 230-MHz TQFP-80 ADS5440 PDF

    F3NK80Z

    Abstract: 9565 p3nk80z D3NK8 D3NK80Z STD3NK80Z STD3NK80Z-1 STD3NK80ZT4 STF3NK80Z STP3NK80Z
    Text: STD3NK80Z, STD3NK80Z-1 STF3NK80Z, STP3NK80Z N-channel 800 V, 3.8 Ω, 2.5 A, TO-220, TO-220FP, DPAK, IPAK Zener-protected SuperMESH Power MOSFET Features VDSS @Tjmax Type RDS(on) ID STP3NK80Z 800 V < 4.5 Ω 2.5 A STF3NK80Z 800 V < 4.5 Ω 2.5 A STD3NK80Z


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    STD3NK80Z, STD3NK80Z-1 STF3NK80Z, STP3NK80Z O-220, O-220FP, STF3NK80Z STD3NK80Z F3NK80Z 9565 p3nk80z D3NK8 D3NK80Z STD3NK80Z STD3NK80Z-1 STD3NK80ZT4 STF3NK80Z STP3NK80Z PDF

    Untitled

    Abstract: No abstract text available
    Text: DSILC6-4xx ESD Protection for high speed interface Main applications I/O3 VCC Where transient over-voltage protection in ESD sensitive equipment is required, such as: • ■ ■ ■ ■ I/O4 I/O2 GND I/O1 Computers Printers Communication systems Cell phone handsets and accessories


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    OT-666 PDF

    Untitled

    Abstract: No abstract text available
    Text: STG3699B Low voltage 0.5 Ω max, quad SPDT switch with break-before-make feature Features • High speed: – tPD = 1.5 ns typ. at VCC = 3.0 V – tPD = 1.5 ns (typ.) at VCC = 2.3 V ■ Ultra low power dissipation: – ICC = 0.2 µA (max.) at TA = 85°C


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    STG3699B QFN16L PDF

    p50ne1

    Abstract: P50NE10 p50ne STP50NE10
    Text: STP50NE10 N-channel 100V - 0.021Ω - 50A TO-220 STripFET Power MOSFET General features Type VDSS RDS on ID STP50NE10 100V <0.027Ω 50A • Exceptional high dv/dt capability ■ 100% avalanche tested ■ Low gate charge at 100 oC ■ Application oriented characterization


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    STP50NE10 O-220 O-220 STP50NE10 P50Nerein p50ne1 P50NE10 p50ne PDF

    4n150

    Abstract: P4N150 STP4N150 STW4N150 W4N150 jedec package TO-220 JESD97 STFV4N150 STFW4N150
    Text: STFV4N150 - STFW4N150 STP4N150 - STW4N150 N-channel 1500 V - 5 Ω - 4 A - PowerMESH Power MOSFET TO-220 - TO-220FH - TO-247 - TO-3PF Features Type VDSS RDS on max ID STFV4N150 STFW4N150 (1) STP4N150 STW4N150 1500 V 1500 V 1500 V 1500 V <7Ω <7Ω <7Ω


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    STFV4N150 STFW4N150 STP4N150 STW4N150 O-220 O-220FH O-247 STFV4N150 STP4N150 4n150 P4N150 STW4N150 W4N150 jedec package TO-220 JESD97 STFW4N150 PDF

    MDDI 1.2

    Abstract: MDDI 1.5 MSM MDDI MDDI SOT-666 JESD97 MDDI host
    Text: DSILC6-4P6 ESD Protection for high speed interface Main applications Where transient over-voltage protection in ESD sensitive equipment is required, such as: • ■ ■ ■ ■ I/O3 VCC Computers Printers Communication systems Cell phone handsets and accessories


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    OT-666 MDDI 1.2 MDDI 1.5 MSM MDDI MDDI SOT-666 JESD97 MDDI host PDF

    D3NK8

    Abstract: P3NK80Z D3NK f3nk80z f3nk80 p3nk80 F3NK8 d3nk80 D3NK80Z STF3NK80Z
    Text: STP3NK80Z - STF3NK80Z STD3NK80Z - STD3NK80Z-1 N-channel 800V - 3.8Ω - 2.5A - TO-220/TO-220FP/DPAK/IPAK Zener-protected SuperMESH Power MOSFET General features • Type VDSS @Tjmax RDS(on) ID STP3NK80Z 800 V < 4.5 Ω 2.5 A STF3NK80Z 800 V < 4.5 Ω


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    STP3NK80Z STF3NK80Z STD3NK80Z STD3NK80Z-1 O-220/TO-220FP/DPAK/IPAK STP3NK80Z STD3NK80Z O-220 D3NK8 P3NK80Z D3NK f3nk80z f3nk80 p3nk80 F3NK8 d3nk80 D3NK80Z STF3NK80Z PDF

    SIP7 package

    Abstract: DCH01 DCH010505D DCH010505S DCH010512D DCH010512S DCH010515D DCH010515S SR-332
    Text: DCH01 Series www.ti.com SBVS073C – MAY 2006 – REVISED AUGUST 2006 MINIATURE, 1W, 3kV ISOLATED UNREGULATED DC/DC CONVERTERS FEATURES DESCRIPTION • • • • • The DCH01 series is a family of miniature, 1W, 3kV isolated DC/DC converters. Featured in an industry


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    DCH01 SBVS073C UL60950 SIP7 package DCH010505D DCH010505S DCH010512D DCH010512S DCH010515D DCH010515S SR-332 PDF

    Untitled

    Abstract: No abstract text available
    Text: ADS5440 www.ti.com SLAS467A – JULY 2005 – REVISED DECEMBER 2005 13-BIT 210 MSPS ANALOG-TO-DIGITAL CONVERTER FEATURES APPLICATIONS • • • • • • • • • • • • • • • • • • • • 13-Bit Resolution 210 MSPS Sample Rate SNR = 69 dBc at 100-MHz IF and 210 MSPS


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    ADS5440 SLAS467A 13-BIT 100-MHz 230-MHz TQFP-80 ADS5444 PDF

    M58LT128HB

    Abstract: M58LT128HT CR10 VFBGA56 026h
    Text: M58LT128HT M58LT128HB 128 Mbit 8 Mb x 16, multiple bank, multilevel interface, burst 1.8 V supply Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 2.7 V to 3.6 V for I/O buffers – VPP = 9 V for fast program


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    M58LT128HT M58LT128HB VFBGA56 M58LT128HB M58LT128HT CR10 VFBGA56 026h PDF

    STTH806DIRG

    Abstract: Turbo2 600 V st 393 STTH806 STTH806D STTH806DI STTH806G STTH806G-TR
    Text: STTH806 Turbo 2 ultrafast - high voltage rectifier Main product characteristics A K K IF AV 8A VRRM 600 V Tj 175° C VF (typ) 1.1 V trr (max) 35 ns A NC D2PAK STTH806G Features and benefits A • Ultrafast switching ■ Low reverse current ■ Low thermal resistance


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    STTH806 STTH806G O-220AC O-220AC STTH806D STTH806DIRG STTH806G-TR STTH806DIRG Turbo2 600 V st 393 STTH806 STTH806D STTH806DI STTH806G STTH806G-TR PDF