STTH
Abstract: AV900
Text: STTH8L06 Turbo 2 ultrafast high voltage rectifier Features K • Ultrafast switching ■ Low reverse recovery current ■ Low thermal resistance ■ Reduces switching and conduction losses ■ Package insulation voltage: – TO-220AC Ins: 2500 V rms – TO-220FPAC: 2000 V DC
|
Original
|
STTH8L06
O-220AC
O-220FPAC:
STTH8L06D
O-220FPAC
STTH8L06FP
STTH8L06,
STTH8L06G
STTH
AV900
|
PDF
|
STTH30
Abstract: No abstract text available
Text: STTH30L06 Turbo 2 ultrafast high voltage rectifier Features • Ultrafast switching ■ Low reverse current ■ Low thermal resistance ■ K A Reduces switching and conduction losses D2PAK STTH30L06G Description The STTH30L06, which is using ST Turbo 2 600 V
|
Original
|
STTH30L06
STTH30L06,
STTH30L06G
DO-247
STTH30L06W
STTH30
|
PDF
|
block code error management, verilog source code
Abstract: NAND01GW3A2B-KGD NAND01GW4A2B-KGD NAND01GWxA2B-KGD
Text: NAND01GW3A2B-KGD NAND01GW4A2B-KGD Known Good Die, 1Gbit x8/x16 , 528 Byte/264 Word Page, 3V, NAND Flash Memory Features • High density NAND Flash memory – 1 Gbit memory array – 32 Mbit spare area – Cost effective solutions for mass storage applications
|
Original
|
NAND01GW3A2B-KGD
NAND01GW4A2B-KGD
x8/x16)
Byte/264
block code error management, verilog source code
NAND01GW3A2B-KGD
NAND01GW4A2B-KGD
NAND01GWxA2B-KGD
|
PDF
|
STTH12R06G
Abstract: STTH12R06G-TR STTH12R06 STTH12R066G-TR STTH12R06D STTH12R06DI STTH12R06DIRG STTH12R06FP T125
Text: STTH12R06 Turbo 2 ultrafast high voltage rectifier Main product characteristics IF AV 12 A VRRM 600 V IRM (typ) 7A Tj 175° C VF (typ) 1.4 V trr (max) 25 ns K K A TO-220AC STTH12R06D A K TO-220FPAC STTH12R06FP Features and benefits K • Ultrafast switching
|
Original
|
STTH12R06
O-220AC
STTH12R06D
O-220FPAC
STTH12R06FP
O220AC
O-220FPAC:
STTH12R06,
STTH12R06G
STTH12R06G-TR
STTH12R06
STTH12R066G-TR
STTH12R06D
STTH12R06DI
STTH12R06DIRG
STTH12R06FP
T125
|
PDF
|
p50ne1
Abstract: No abstract text available
Text: STP50NE10 N-channel 100V - 0.021Ω - 50A TO-220 STripFET Power MOSFET General features Type VDSS RDS on ID STP50NE10 100V <0.027Ω 50A ) s ( t c u d o ) r s ( P Description t c e t u e d l o o r s Internal schematic diagram P b e O t e l ) o s ( s t
|
Original
|
STP50NE10
O-220
p50ne1
|
PDF
|
Untitled
Abstract: No abstract text available
Text: STTH12R06 Turbo 2 ultrafast high voltage rectifier Features • Ultrafast switching ■ Low reverse recovery current ■ Low thermal resistance ■ Reduces switching losses ■ Package insulation voltage: TO220AC ins: 2500 VRMS TO-220FPAC: 2000 VDC K K A A
|
Original
|
STTH12R06
O220AC
O-220FPAC:
O-220AC
STTH12R06D
O-220FPAC
STTH12R06FP
STTH12R06
STTH12R06G
O-220AC
|
PDF
|
SOT23-5 MARKING V4
Abstract: opa 275
Text: OPA643 OP OPA 643 A64 OPA 3 658 Wideband Low Distortion, High Gain OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● LOW DISTORTION: –90dBc at 5MHz ● LOW NOISE: 2.3nV/√Hz ● GAIN-BANDWIDTH PRODUCT: 800MHz ● BASE STATION ADC PREAMP ● ADC/DAC BUFFER AMPLIFIER
|
Original
|
OPA643
90dBc
800MHz
OT23-5
OPA643
SOT23-5 MARKING V4
opa 275
|
PDF
|
LVDS to MIPI DSI
Abstract: MIPI DSI to lvds mipi DSI LCD controller MDDI to MIPI datasheet ci 666 MIPI Specification MIPI DSI MIPI DSI lvds MIPI DSI Device Controller 4F2 diode
Text: DSILC6-4xx ESD Protection for high speed interface Main applications I/O3 VCC Where transient over-voltage protection in ESD sensitive equipment is required, such as: • ■ ■ ■ ■ I/O4 I/O2 GND I/O1 Computers Printers Communication systems Cell phone handsets and accessories
|
Original
|
OT-666
OT-666
LVDS to MIPI DSI
MIPI DSI to lvds
mipi DSI LCD controller
MDDI to MIPI datasheet
ci 666
MIPI Specification
MIPI DSI
MIPI DSI lvds
MIPI DSI Device Controller
4F2 diode
|
PDF
|
STW4N150
Abstract: STP4N150 TO-247 st 0560 L30 diode part marking st 393 STMicroelectronics DIODE marking code JESD97 W4N150
Text: STP4N150 STW4N150 N-channel 1500V - 5Ω - 4A - TO-220/TO-247 Very high PowerMESH Power MOSFET General features Type VDSS @Tjmax RDS(on) ID STP4N150 1500 V <7Ω 4A STW4N150 1500 V <7Ω 4A • Avalanche ruggedness ■ Gate charge minimized ■ Very low intrinsic capacitances
|
Original
|
STP4N150
STW4N150
O-220/TO-247
O-220
O-247
STW4N150
STP4N150
TO-247
st 0560
L30 diode part marking
st 393
STMicroelectronics DIODE marking code
JESD97
W4N150
|
PDF
|
STP4N150
Abstract: 4N150 STFW4N150 STW4N150 W4N150
Text: STFW4N150 STP4N150, STW4N150 N-channel 1500 V, 5 Ω, 4 A, PowerMESH Power MOSFET TO-220, TO-247, TO-3PF Features Type VDSS RDS on max ID 1500 V <7Ω 4A STP4N150 1500 V <7Ω 4A STW4N150 1500 V <7Ω 4A STFW4N150 (1) 3 1 2 2 TO-220 TO-247 1. All data which refers solely to the TO-3PF package is
|
Original
|
STFW4N150
STP4N150,
STW4N150
O-220,
O-247,
STP4N150
O-220
O-247
STP4N150
4N150
STFW4N150
STW4N150
W4N150
|
PDF
|
F3HNK90Z
Abstract: P3HNK90Z STP3HNK90Z JESD97 STF3HNK90Z
Text: STP3HNK90Z STF3HNK90Z N-channel 900V - 0.35Ω - 3A - TO-220 - TO-220FP Zener-protected SuperMESH Power MOSFET General features Type VDSS @Tjmax RDS(on) ID STP3HNK90Z 900 V < 0.42 Ω 3A STP3HNK90Z 900 V < 0.42 Ω 3A 3 • Extremely high dv/dt capability
|
Original
|
STP3HNK90Z
STF3HNK90Z
O-220
O-220FP
O-220
F3HNK90Z
P3HNK90Z
STP3HNK90Z
JESD97
STF3HNK90Z
|
PDF
|
STLC2590
Abstract: E-STLC2590 fm radio control interface BT-12
Text: STLC2590 Bluetooth EDR and RDS FM radio tuner Data Brief Bluetooth features • The lowest power consumption by design and technology see Table 1 ■ World best EDR throughput (see Table 1) ■ World most performing BT-WLAN coexistence support for several BT-WLAN coexistence
|
Original
|
STLC2590
STLC2590
E-STLC2590
fm radio control interface
BT-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ADS5444 www.ti.com SLWS162A – AUGUST 2005 – REVISED FEBRUARY 2006 13-BIT 250 MSPS ANALOG-TO-DIGITAL CONVERTER FEATURES APPLICATIONS • • • • • • • • • • • • • • • • • • • • 13-Bit Resolution 250 MSPS Sample Rate SNR = 69 dBc at 100-MHz IF and 250 MSPS
|
Original
|
ADS5444
SLWS162A
13-BIT
100-MHz
230-MHz
TQFP-80
ADS5440
|
PDF
|
F3NK80Z
Abstract: 9565 p3nk80z D3NK8 D3NK80Z STD3NK80Z STD3NK80Z-1 STD3NK80ZT4 STF3NK80Z STP3NK80Z
Text: STD3NK80Z, STD3NK80Z-1 STF3NK80Z, STP3NK80Z N-channel 800 V, 3.8 Ω, 2.5 A, TO-220, TO-220FP, DPAK, IPAK Zener-protected SuperMESH Power MOSFET Features VDSS @Tjmax Type RDS(on) ID STP3NK80Z 800 V < 4.5 Ω 2.5 A STF3NK80Z 800 V < 4.5 Ω 2.5 A STD3NK80Z
|
Original
|
STD3NK80Z,
STD3NK80Z-1
STF3NK80Z,
STP3NK80Z
O-220,
O-220FP,
STF3NK80Z
STD3NK80Z
F3NK80Z
9565
p3nk80z
D3NK8
D3NK80Z
STD3NK80Z
STD3NK80Z-1
STD3NK80ZT4
STF3NK80Z
STP3NK80Z
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: DSILC6-4xx ESD Protection for high speed interface Main applications I/O3 VCC Where transient over-voltage protection in ESD sensitive equipment is required, such as: • ■ ■ ■ ■ I/O4 I/O2 GND I/O1 Computers Printers Communication systems Cell phone handsets and accessories
|
Original
|
OT-666
|
PDF
|
Untitled
Abstract: No abstract text available
Text: STG3699B Low voltage 0.5 Ω max, quad SPDT switch with break-before-make feature Features • High speed: – tPD = 1.5 ns typ. at VCC = 3.0 V – tPD = 1.5 ns (typ.) at VCC = 2.3 V ■ Ultra low power dissipation: – ICC = 0.2 µA (max.) at TA = 85°C
|
Original
|
STG3699B
QFN16L
|
PDF
|
p50ne1
Abstract: P50NE10 p50ne STP50NE10
Text: STP50NE10 N-channel 100V - 0.021Ω - 50A TO-220 STripFET Power MOSFET General features Type VDSS RDS on ID STP50NE10 100V <0.027Ω 50A • Exceptional high dv/dt capability ■ 100% avalanche tested ■ Low gate charge at 100 oC ■ Application oriented characterization
|
Original
|
STP50NE10
O-220
O-220
STP50NE10
P50Nerein
p50ne1
P50NE10
p50ne
|
PDF
|
4n150
Abstract: P4N150 STP4N150 STW4N150 W4N150 jedec package TO-220 JESD97 STFV4N150 STFW4N150
Text: STFV4N150 - STFW4N150 STP4N150 - STW4N150 N-channel 1500 V - 5 Ω - 4 A - PowerMESH Power MOSFET TO-220 - TO-220FH - TO-247 - TO-3PF Features Type VDSS RDS on max ID STFV4N150 STFW4N150 (1) STP4N150 STW4N150 1500 V 1500 V 1500 V 1500 V <7Ω <7Ω <7Ω
|
Original
|
STFV4N150
STFW4N150
STP4N150
STW4N150
O-220
O-220FH
O-247
STFV4N150
STP4N150
4n150
P4N150
STW4N150
W4N150
jedec package TO-220
JESD97
STFW4N150
|
PDF
|
MDDI 1.2
Abstract: MDDI 1.5 MSM MDDI MDDI SOT-666 JESD97 MDDI host
Text: DSILC6-4P6 ESD Protection for high speed interface Main applications Where transient over-voltage protection in ESD sensitive equipment is required, such as: • ■ ■ ■ ■ I/O3 VCC Computers Printers Communication systems Cell phone handsets and accessories
|
Original
|
OT-666
MDDI 1.2
MDDI 1.5
MSM MDDI
MDDI
SOT-666
JESD97
MDDI host
|
PDF
|
D3NK8
Abstract: P3NK80Z D3NK f3nk80z f3nk80 p3nk80 F3NK8 d3nk80 D3NK80Z STF3NK80Z
Text: STP3NK80Z - STF3NK80Z STD3NK80Z - STD3NK80Z-1 N-channel 800V - 3.8Ω - 2.5A - TO-220/TO-220FP/DPAK/IPAK Zener-protected SuperMESH Power MOSFET General features • Type VDSS @Tjmax RDS(on) ID STP3NK80Z 800 V < 4.5 Ω 2.5 A STF3NK80Z 800 V < 4.5 Ω
|
Original
|
STP3NK80Z
STF3NK80Z
STD3NK80Z
STD3NK80Z-1
O-220/TO-220FP/DPAK/IPAK
STP3NK80Z
STD3NK80Z
O-220
D3NK8
P3NK80Z
D3NK
f3nk80z
f3nk80
p3nk80
F3NK8
d3nk80
D3NK80Z
STF3NK80Z
|
PDF
|
SIP7 package
Abstract: DCH01 DCH010505D DCH010505S DCH010512D DCH010512S DCH010515D DCH010515S SR-332
Text: DCH01 Series www.ti.com SBVS073C – MAY 2006 – REVISED AUGUST 2006 MINIATURE, 1W, 3kV ISOLATED UNREGULATED DC/DC CONVERTERS FEATURES DESCRIPTION • • • • • The DCH01 series is a family of miniature, 1W, 3kV isolated DC/DC converters. Featured in an industry
|
Original
|
DCH01
SBVS073C
UL60950
SIP7 package
DCH010505D
DCH010505S
DCH010512D
DCH010512S
DCH010515D
DCH010515S
SR-332
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ADS5440 www.ti.com SLAS467A – JULY 2005 – REVISED DECEMBER 2005 13-BIT 210 MSPS ANALOG-TO-DIGITAL CONVERTER FEATURES APPLICATIONS • • • • • • • • • • • • • • • • • • • • 13-Bit Resolution 210 MSPS Sample Rate SNR = 69 dBc at 100-MHz IF and 210 MSPS
|
Original
|
ADS5440
SLAS467A
13-BIT
100-MHz
230-MHz
TQFP-80
ADS5444
|
PDF
|
M58LT128HB
Abstract: M58LT128HT CR10 VFBGA56 026h
Text: M58LT128HT M58LT128HB 128 Mbit 8 Mb x 16, multiple bank, multilevel interface, burst 1.8 V supply Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 2.7 V to 3.6 V for I/O buffers – VPP = 9 V for fast program
|
Original
|
M58LT128HT
M58LT128HB
VFBGA56
M58LT128HB
M58LT128HT
CR10
VFBGA56
026h
|
PDF
|
STTH806DIRG
Abstract: Turbo2 600 V st 393 STTH806 STTH806D STTH806DI STTH806G STTH806G-TR
Text: STTH806 Turbo 2 ultrafast - high voltage rectifier Main product characteristics A K K IF AV 8A VRRM 600 V Tj 175° C VF (typ) 1.1 V trr (max) 35 ns A NC D2PAK STTH806G Features and benefits A • Ultrafast switching ■ Low reverse current ■ Low thermal resistance
|
Original
|
STTH806
STTH806G
O-220AC
O-220AC
STTH806D
STTH806DIRG
STTH806G-TR
STTH806DIRG
Turbo2 600 V
st 393
STTH806
STTH806D
STTH806DI
STTH806G
STTH806G-TR
|
PDF
|