Untitled
Abstract: No abstract text available
Text: & 28C04A M icro ch ip 4K 512 x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • Fast Read Access Time— 150ns • CMOS Technology for Low Power Dissipation —30mA Active — 10OgA Standby • Fast Byte Write Time— 200ns or 1ms • Data Retention >10 years
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28C04A
150ns
10OgA
200ns
512x8
24-pin
32-pin
DS11126C-page
28C04A
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Untitled
Abstract: No abstract text available
Text: TYPE 6 1 5C C eram ic Disc C apacitors Cera-mite , High Voltage SPRAGUE APPLICATIONS Cera-Mite® high voltage capacitors have become the choice of discriminating designers throughout the world. This reputation for product quality and reliability is a result of
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100kHz
N4700
N4700
150GAST10
150GAT25
150GATT25
150GAST25
150GATT39
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Untitled
Abstract: No abstract text available
Text: A COMPANY TYPE 6 1 5C Ceram ic Disc C apacitors Cera-mite , High Voltage OF SPRAGUE APPLICATIONS Cera-Mite® high voltage capacitors have become the choice of discriminating designers throughout the world. This reputation for product quality and reliability is a result of
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100kHz
N4700
d0GATT10
N4700
150GAST10
150GAT25
150GATT25
150GAST25
150GATT39
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transistor tic 2260
Abstract: tic 2260
Text: SOT89 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR FCX458 ISSUE 3 - OCTOBER 1995_ FEATURES * * 400 V o lt V CE0 Pt0,= 1 W a tt CO M PLEM ENTARY TYPE - FCX558 PARTM AR KIN G DETAIL - N58 #• B ABSOLUTE MAXIMUM RATINGS. SYM BOL PARAMETER VALUE
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FCX458
FCX558
300jis.
FMMT458
transistor tic 2260
tic 2260
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