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tme 126 Abstract: MGW12N120 IC9012 Bipolar WPC Text: MOTOROLA SEMICONDUCTOR = TECHNICAL DATA Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate MGW12N120 This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high voltage-blocking capability.	Original	MGW12N120 O-247 10USminimum tme 126 MGW12N120 IC9012 Bipolar WPC	PDF

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tme 126

Abstract: MGW12N120 IC9012 Bipolar WPC
Text: MOTOROLA SEMICONDUCTOR = TECHNICAL DATA Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate MGW12N120 This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high voltage-blocking capability.

Original

MGW12N120 O-247 10USminimum tme 126 MGW12N120 IC9012 Bipolar WPC

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