Untitled
Abstract: No abstract text available
Text: CS8311 CS8311 Micropower 10V, 100mA Low Dropout Linear Regulator with RESET and ENABLE Features Description The CS8311 is a precision 10V micropower voltage regulator with very low quiescent current 100µA typ. at 100µA load . The 10V output is accurate within ±4% and supplies
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CS8311
100mA
CS8311
400mV.
MS-012
CS8311YD8
CS8311YDR8
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step down Voltage Regulator 230 volt to 150 volt
Abstract: No abstract text available
Text: CS8311 CS8311 Micropower 10V, 100mA Low Dropout Linear Regulator with RESET and ENABLE Features Description The CS8311 is a precision 10V micropower voltage regulator with very low quiescent current 100µA typ. at 100µA load . The 10V output is accurate within ±4% and supplies
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CS8311
100mA
CS8311
400mV.
MS-012
CS8311YD8
CS8311YDR8
step down Voltage Regulator 230 volt to 150 volt
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COBRA5272
Abstract: sentec HALO TG110-S050N2 TG110-S050N2 smd diode a9 sub-d9F LM2596 SMD DIODE A13 BLM41PG600SN1L TG110S050N2
Text: 5 4 3 2 1 D D +3.3V Switcher L2 U4 100nF SMD0805 + + C4 Power D14 LED Low Current + 220µF/10V SMD 1812 R1 1k C3 LM2596-3.3/TO263 Ringkern 35µH 220µF/10V SMD 1812 FB ON/OFF 2 220µF/10V SMD 1812 100nF SMD0805 4 5 OUT D13 B + VIN C12 C1 CON 1 C2 1000µF/35V radial
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100nF
SMD0805
F/10V
LM2596-3
3/TO263
SCHOTTKY31
SMD1812
COBRA5272
sentec
HALO TG110-S050N2
TG110-S050N2
smd diode a9
sub-d9F
LM2596
SMD DIODE A13
BLM41PG600SN1L
TG110S050N2
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Untitled
Abstract: No abstract text available
Text: IC IC MOSFET SMD Type Product specification KDS2572 Features RDS ON = 0.040 (Typ.), VGS = 10V Qg(TOT) = 29nC (Typ.), VGS = 10V Low QRR Body Diode Maximized efficiency at high frequencies UIS Rated Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit
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KDS2572
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ja smd
Abstract: IC MOSFET QG smd diode fr
Text: IC IC SMD Type N-Channel UltraFET Trench MOSFET KDS2572 Features RDS ON = 0.040 (Typ.), VGS = 10V Qg(TOT) = 29nC (Typ.), VGS = 10V Low QRR Body Diode Maximized efficiency at high frequencies UIS Rated Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating
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KDS2572
ja smd
IC MOSFET QG
smd diode fr
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Untitled
Abstract: No abstract text available
Text: IC IC SMD Type HEXFET Power MOSFET KRF7460 Features Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Continuous Drain Current, VGS @ 10V,Ta = 25 ID 12 Continuous Drain Current, VGS @ 10V,TA = 70 ID 10 Pulsed Drain Current*1 IDM 100 Power Dissipation Ta = 25
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KRF7460
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KRF7805Z
Abstract: No abstract text available
Text: IC IC SMD Type HEXFET Power MOSFET KRF7805Z Features Absolute Maximum Ratings Ta = 25 Symbol Rating Continuous Drain Current, VGS @ 10V,TA = 25 Parameter ID 16 Continuous Drain Current, VGS @ 10V,TA = 70 ID 12 Pulsed Drain Current*1 Unit A IDM 120 Power Dissipation Ta = 25
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KRF7805Z
KRF7805Z
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smd diode 44a
Abstract: isd 1710 smd 44A FDB3672 KDB3672 PF247
Text: MOSFET SMD Type N-Channel PowerTrench MOSFET KDB3672 FDB3672 TO-263 Features (Typ.), VGS = 10V, ID =44A +0.1 1.27-0.1 rDS(ON) =24m Qg(tot) = 24nC (Typ.), VGS = 10V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 +0.2 2.54-0.2 +0.2 15.25-0.2 0.1max +0.1 1.27-0.1 +0.2
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KDB3672
FDB3672)
O-263
smd diode 44a
isd 1710
smd 44A
FDB3672
KDB3672
PF247
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Untitled
Abstract: No abstract text available
Text: SMD Type Product specification KDB3632 FDB3632 TO-263 Features (Typ.), VGS = 10V, ID = 80A +0.1 1.27-0.1 rDS(ON) = 7.5m Qg(tot) = 84nC (Typ.), VGS = 10V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 UIS Capability (Single Pulse and Repetitive Pulse)
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KDB3632
FDB3632)
O-263
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Untitled
Abstract: No abstract text available
Text: SMD Type Product specification KDB3652 FDB3652 TO-263 Features (Typ.), VGS = 10V, ID = 61A +0.1 1.27-0.1 rDS(ON) = 14m Qg(tot) = 41nC (Typ.), VGS = 10V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 UIS Capability (Single Pulse and Repetitive Pulse)
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KDB3652
FDB3652)
O-263
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Untitled
Abstract: No abstract text available
Text: SMD Type Product specification KDB2572 FDB2572 Features TO-263 Unit: mm (Typ.), VGS = 10V, ID = 9A +0.1 1.27-0.1 rDS(ON) = 45m Qg(tot) = 26nC (Typ.), VGS = 10V +0.1 1.27-0.1 +0.2 4.57-0.2 Low Miller Charge 5.60 +0.2 2.54-0.2 +0.2 15.25-0.2 0.1max +0.1 1.27-0.1
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KDB2572
FDB2572)
O-263
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Untitled
Abstract: No abstract text available
Text: SMD Type Product specification KDB3682 FDB3682 TO-263 Features (Typ.), VGS = 10V, ID =32A +0.1 1.27-0.1 rDS(ON) =32m Qg(tot) = 18.5nC (Typ.), VGS = 10V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 UIS Capability (Single Pulse and Repetitive Pulse)
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KDB3682
FDB3682)
O-263
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FDB2572
Abstract: diode 9A KDB2572
Text: MOSFET SMD Type N-Channel PowerTrench MOSFET KDB2572 FDB2572 Features TO-263 Unit: mm (Typ.), VGS = 10V, ID = 9A +0.1 1.27-0.1 rDS(ON) = 45m Qg(tot) = 26nC (Typ.), VGS = 10V +0.1 1.27-0.1 +0.2 4.57-0.2 Low Miller Charge 5.60 +0.2 2.54-0.2 +0.2 15.25-0.2 0.1max
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KDB2572
FDB2572)
O-263
FDB2572
diode 9A
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31A36
Abstract: KRF7494 IC 31A
Text: IC IC SMD Type HEXFET Power MOSFET KRF7494 Features High frequency DC-DC converters Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating ID 5.2 Continuous Drain Current, VGS @ 10V,TA = 100 ID 3.7 Pulsed Drain Current*1 IDM 42 PD 3 Continuous Drain Current, VGS @ 10V,Ta = 25
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KRF7494
31A36
KRF7494
IC 31A
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kds9
Abstract: TRANSISTOR SMD 13W SMD 13W Transistor Mosfet N-Ch 30V KDS9952A 1c smd transistor SMD Transistor nc Dual N & P-Channel MOSFET
Text: Transistors IC SMD Type Dual N & P-Channel Enhancement Mode Field Effect Transistor KDS9952A Features N-Channel 3.7A, 30V, RDS ON =0.08W @ VGS=10V. P-Channel -2.9A, -30V, RDS(ON)=0.13W @ VGS=-10V. High density cell design or extremely low RDS(ON). High power and current handling capability in a widely used
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KDS9952A
kds9
TRANSISTOR SMD 13W
SMD 13W
Transistor Mosfet N-Ch 30V
KDS9952A
1c smd transistor
SMD Transistor nc
Dual N & P-Channel MOSFET
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equivalent smd mosfet
Abstract: FDB3682 KDB3682
Text: MOSFET SMD Type N-Channel PowerTrench MOSFET KDB3682 FDB3682 TO-263 Features (Typ.), VGS = 10V, ID =32A +0.1 1.27-0.1 rDS(ON) =32m Qg(tot) = 18.5nC (Typ.), VGS = 10V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 UIS Capability (Single Pulse and Repetitive Pulse)
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KDB3682
FDB3682)
O-263
equivalent smd mosfet
FDB3682
KDB3682
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FDB3632
Abstract: KDB3632 84NC mosfet smd
Text: MOSFET SMD Type N-Channel PowerTrench MOSFET KDB3632 FDB3632 TO-263 Features (Typ.), VGS = 10V, ID = 80A +0.1 1.27-0.1 rDS(ON) = 7.5m Qg(tot) = 84nC (Typ.), VGS = 10V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 UIS Capability (Single Pulse and Repetitive Pulse)
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KDB3632
FDB3632)
O-263
FDB3632
84NC
mosfet smd
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elna 100uF
Abstract: RVJ-50V101MH10-R elna 100uF 16v elna 100uf 10v RVJ-35V101MH10-R RVJ-35V221MH10-R elna 50v, 100uF ELNA 25v 47uf RVJ-10V221MG10-R RVJ-10V471MH10-R
Text: 2002-01-15 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 67-315-25 Ellytkond SMD 330uF/6V 67-316-16 Ellytkond SMD 100uF/10V 67-316-24 Ellytkond SMD 220uF/10V 67-317-49 Ellytkond SMD 470uF/16V
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330uF/6V
100uF/10V
220uF/10V
470uF/16V
100uF/25V
330uF/25V
220uF/35V
47uF/50V
100uF/50V
RVJ-63V470MH10-R
elna 100uF
RVJ-50V101MH10-R
elna 100uF 16v
elna 100uf 10v
RVJ-35V101MH10-R
RVJ-35V221MH10-R
elna 50v, 100uF
ELNA 25v 47uf
RVJ-10V221MG10-R
RVJ-10V471MH10-R
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Untitled
Abstract: No abstract text available
Text: MOSFET SMD Type N-Channel PowerTrench MOSFET KDB3652 FDB3652 TO-263 Features (Typ.), VGS = 10V, ID = 61A +0.1 1.27-0.1 rDS(ON) = 14m Qg(tot) = 41nC (Typ.), VGS = 10V Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 UIS Capability (Single Pulse and Repetitive Pulse)
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KDB3652
FDB3652)
O-263
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smd transistor g1
Abstract: g1 smd transistor smd transistor S1 mosfet vgs 5v smd diode S2 g1 smd diode MOSFET TSSOP-8 dual n-channel smd transistor 7a G1 C smd MOSFET TSSOP-8
Text: IC MOSFET SMD Type Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor KO8822 TSSOP-8 • Features Unit: mm ● VDS V = 20V ● ID = 7A (VGS=10V) ● RDS(ON) ＜ 21mΩ (VGS = 10V) ● RDS(ON) ＜ 24mΩ (VGS = 4.5V) ● RDS(ON) ＜ 32mΩ (VGS = 2.5V)
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KO8822
00A/s
smd transistor g1
g1 smd transistor
smd transistor S1
mosfet vgs 5v
smd diode S2
g1 smd diode
MOSFET TSSOP-8 dual n-channel
smd transistor 7a
G1 C smd
MOSFET TSSOP-8
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Untitled
Abstract: No abstract text available
Text: SMD Type Product specification KDB2552 FDB2552 Features Unit: mm (Typ.), VGS = 10V, ID = 16A +0.1 1.27-0.1 rDS(ON) = 32m TO-263 Qg(tot) = 39nC (Typ.), VGS = 10V +0.1 1.27-0.1 +0.2 4.57-0.2 +0.2 2.54-0.2 +0.2 15.25-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 UIS Capability (Single Pulse and Repetitive Pulse)
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KDB2552
FDB2552)
O-263
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Untitled
Abstract: No abstract text available
Text: MOSFET SMD Type N-Channel MOSFET KX7N10L SOT-223 ● V DS V = 100V Unit: mm +0.2 3.50-0.2 +0.2 -0.2 0.1max +0.05 0.90-0.05 6.50 ● ID = 1.7 A (V GS = 10V) ● RDS(ON) ＜ 350mΩ (VG S = 10V), ID=0.85A +0.1 3.00-0.1 +0.15 1.65-0.15 • Features +0.2 0.90-0.2
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KX7N10L
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A5E capacitor
Abstract: No abstract text available
Text: CS8311 Micropower 10V, 100mA Low Dropout Linear Regulator with RESET and ENABLE Features Description The CS8311 is a precision 10V micropower voltage regulator with very low quiescent current 100|iA typ at IOOji A load . The 10V output is accurate within ±2% and supplies
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OCR Scan
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CS8311
100mA
CS8311
400mV.
200mV
CS8311YD8
CS8311YDR8
A5E capacitor
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Untitled
Abstract: No abstract text available
Text: Micropower 10V, 100mA Low Dropout Linear Regulator with RESET and ENABLE D escription The CS8311 is a precision 10V m icropow er voltage regulator w ith very low quiescent current 100//A typ. at 100/iA load . The 10V o u tp u t is accurate w ith in +4% an d supplies
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100mA
CS8311
100//A
100/iA
400mV.
MS-012
CS8311YD8
CS8311YDR8
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