54AC153
Abstract: No abstract text available
Text: 54AC153 • 54ACT153 Dual 4-Input Multiplexer General Description Features The ’AC/’ACT153 is a high-speed dual 4-input multiplexer with common select inputs and individual enable inputs for each section. It can select two lines of data from four sources. The two buffered outputs present data in the true
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54AC153
54ACT153
ACT153
AC153:
ACT153:
DS100271-1
54AC153
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ON769
Abstract: CLC432AJP
Text: CLC431/432 Dual Wideband Monolithic Op Amp with Disable General Description Features The CLC431 and CLC432 current-feedback amplifiers provide wide bandwidths and high slew rates for applications where board density and power are key considerations. These amplifiers provide DC-coupled small signal bandwidths exceeding 92MHz while consuming only 7mA per
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CLC431/432
CLC431
CLC432
92MHz
28Vpp.
OA-30:
ON769
CLC432AJP
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voltage reference IC LM129
Abstract: home electronic projects schematic zener LM329 lm329 LM329d PIN DIAGRAM LM129 National Discrete Products
Text: LM129/LM329 Precision Reference General Description The LM129 and LM329 family are precision multi-current temperature-compensated 6.9V zener references with dynamic impedances a factor of 10 to 100 less than discrete diodes. Constructed in a single silicon chip, the LM129 uses
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LM129/LM329
LM129
LM329
pdf\recode\LM129
voltage reference IC LM129
home electronic projects schematic
zener LM329
LM329d PIN DIAGRAM
National Discrete Products
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Untitled
Abstract: No abstract text available
Text: FORWARD INTERNATIONAL ELECTRONICS L ID . KTC3198L SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR LOW NOISE AMPLIFIER APPLICATION Package: TO-92 FEATURES * Excellent Hfe Linearity :Hfe 2 =100(Typ) atVce=6V, Ic= 150mA. :HFE(Ic=0.1mA)/Hfe(Ic=2mAH). 95(Typ).
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KTC3198L
150mA.
toKTA1266L
100uA
100uA
150mA
100mA
10VIeF
10VJe
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Untitled
Abstract: No abstract text available
Text: 2SB834 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS L ID . TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER *Compkmntaryto 2SD880 ABSOLUTE MAXIMUM RATINGS a t T airfW fV Characteristic Symbol Rating Vcbo Collector-Base Voltaae
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2SB834
2SD880
-50mA
-500mA
-300mA
-10VIe
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Untitled
Abstract: No abstract text available
Text: BC237S SEM ICONDUCTOR FORWARD INTERNATIONAL ELECTE0NICS LTD. TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR Package: SOT-23 ABSOLUTE MAXIMUM RATINGS a t Tan*=25*C Symbol Rating Characteristic Collector-Emitter Voltage Colfector-Eoatter Voltage
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BC237S
OT-23
100uA
125gC
100mA
10inA
Ic-100mA
100mA
100uA
10VIe
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Untitled
Abstract: No abstract text available
Text: 2SA1048 SEM ICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS L ID . PNP EPITAXIAL SILICON TRANSISTOR TECHNICAL DATA AUDIO FREQUENCY AMPLIFIER APPLICATION * * * * Complement To2SC2458 Collector-Emitter Voltage: Vce=-50V. High Hfe And Good Linearity Low Noise: NF=1 dB TYR , 10dB(Max*)
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2SA1048
To2SC2458
-100mA
-10mA
-10VIeN)
10kohtn
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Untitled
Abstract: No abstract text available
Text: KTA1266 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS ltd , TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION FEATURES *ExceUent Hfe Linearity :Hfe 2 =80(Typ) at Vce=-6V, Ic=-150mA. :HFE(Ic=0.1mA)/Hfe(Ic=2mA>0.95(Typ).
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KTA1266
-150mA.
toKTC3198
-100uA
cb-50V
-150mA
-100mA
-10mA
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Untitled
Abstract: No abstract text available
Text: FORWARD INTCENAHONAl ELECTRONICS LTD, S9016 SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR AM CONVERTER, FM/RF AMPLIFIER OF LOW NOISE * High Total power dissipation. Pt=400mW ABSOLUTE MAXIMUM RATINGS a t Tamb=2$°C C haracteristic Symbol R ating
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S9016
400mW)
100uA
10VIeM)
100MHz
50ohm
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S9011* transistor
Abstract: S9011 BVCBO-50V
Text: FORWARD INTERNATIONAL ELECTRONICS LID. S9011S SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR AM CONVERTER, AM/FM IF AMPLIFIER GENERAL PURPOSE TRANSISTOR Package: SOT-23 ABSOLUTE MAXIMUM RATINGS at Tan*F=25#C Characteristic Symbol Rating Unit
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S9011S
OT-23
100uA
100uA
10VIe
300uS,
S9011* transistor
S9011
BVCBO-50V
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Untitled
Abstract: No abstract text available
Text: tgr P BC547 SEM ICO N D U CTO R FORWARD INTERNATIONAL ELECTRONICS LTD. TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AF AMPLIFIER * Complement to Package: TO-92 Bc557 a ABSOLUTE MAXIMUM RATINGS a t T iin*=25'C C haracteristic Symbol Rating
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BC547
Bc557
100uA
100mA
10VIe
100MHz
200uA
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Untitled
Abstract: No abstract text available
Text: FORWARD INTERNATIONAL ELECTRONICS LID . S9011S SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR AM CONVERTER, AM/FM IF AMPLIFIER GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS a t Tanft^25°C Symbol Rating Characteristic Vcbo Collector-Base Voltage
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S9011S
100uA
10VIe
300uS,
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Untitled
Abstract: No abstract text available
Text: KTC3203 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LID. ~~ TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR HIGH CURRENT APPLICATION. Package: TO-92 FEATURE ♦Complementary toKTA1271 ABSOLUTE MAXIMUM RATINGS a t Tan*=25°C Characteristic Symbol Rating
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KTC3203
toKTA1271
100mA
700mA
500mA
10VIe
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Untitled
Abstract: No abstract text available
Text: 2SB772 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LTD, _ TECHNICAL DATA PNP H>ITAXIAL SILICON TRANSISTOR HIGH CURRENT LOW VOLTAGE TRANSISTOR Package: TO-92 FEATURES ♦High current output up to 3A ♦Low satuatkm voltage ♦Complement to 2SD882 APPLICATIONS
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2SB772
2SD882
300uS
-100uA
-20mA
-10VIe
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Untitled
Abstract: No abstract text available
Text: fr | FORWARD INTERNATIONAL ELECTRONICS LTD, BC182 SEMICONDUCTOR NPN EPITAXIAL SILICON TRANSISTOR TECHNICAL DATA AMPLIFIER TRANSISTOR ABSOLUTE MAXIMUM RATINGS at Tairib=25‘c Symbol Vcbo R ating Unit 60 Vceo 50 V V Vebo 6 V Collector Diss^ation Ic Pc 100
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BC182
300uS
100uA
100mA
100mA
100uA
10VIe
100MHz
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Untitled
Abstract: No abstract text available
Text: S9014S SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LTD, _ TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER LOW LEVEL & LOW NOISE * * * * * Complement to S9015S Collector Current :Ic=10OmA Collector-Emitter Voltage: Vceo=45V. High Total Power Dissipation: pD=225mW
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S9014S
S9015S
10OmA
225mW
100uA
100mA
10VIe
300uS,
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Untitled
Abstract: No abstract text available
Text: | a B C 338 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS L ID . TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS Package: TO-92 * Suitable For AF-Driver Stages And Low Power Output Stages * Complement to Bc328 a ABSOLUTE MAXIMUM RATINGS at Tamb=25'C
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Bc328
100uA
100mA
300mA
10VIe
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Untitled
Abstract: No abstract text available
Text: 14055455 OODTIOT T 1 ”' T -2-S -27 IN TE RN AT IONAL RE CTIFIER IO R in t e r n a t io n a l -DE 1 4055455 Data Sheet No. PD-3.173 r e c t if ie r S52KF SERIES 1200-1000 VOLTS RANGE STANDARD TURN-OFF TIME 20 / j s 1590 AMP RMS, RING AMPLIFYING GATE INVERTER TYPE HOCKEY PUK SCRs
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S52KF
S52KF
S52KF12B.
SS455
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transistor S9011
Abstract: S9011 S9011 npn S9011* transistor FORWARd International Transistor S9011 characteristics
Text: I e FORWARD INTERNATIONAL ELECTRONICS LID . S9011 SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR AM CONVERTER , AM/FM IF AMPLIFIER GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS at T r a M ^ C Characteristic Symbol Rating Collector-Base Volage
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S9011
100uA
10VIE)
500ohm
transistor S9011
S9011
S9011 npn
S9011* transistor
FORWARd International
Transistor S9011 characteristics
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Untitled
Abstract: No abstract text available
Text: S9014 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS L ID . TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPUFIER*LOW LEVEL&LOW NOISE Package: TO-92 * * * * * Com plem ent To S9015 C ollector C urrent :Ic= 100mA C ollector-Em itter Voltage: V ce=45Y
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S9014
S9015
100mA
100uA
100mA
10VIe
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Untitled
Abstract: No abstract text available
Text: 2SB1237 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LTD. TECHNICAL DATA MEDIUM POWER TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR Features. * Low VCE,;^, , VCE^ggjj =-0.2V Typ.) (Ic/Ib=-500mA/-50mA) * Complement to 2SD1858 ABSOLUTE M AXIMUM RATINGS at Tinr*=25°C
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2SB1237
-500mA/-50mA)
2SD1858
10CtaoÂ
-50uA
100mA
-500mA
-50mA
-50mA,
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s9011
Abstract: S9011* transistor
Text: S9011 SEM ICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LTD. TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR AM CONVERTER , AM/FM IF AMPLIFIER GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS a t T an*=25'c Characteristic Symbol Raring Collector-Base Voltage
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S9011
100uA
10VIE
500ohm
s9011
S9011* transistor
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