AM97C11CN
Abstract: AM9711CN LM378 equivalent SVI 3102 b LM1850 National Semiconductor LM2706 320l 78l05 lm1900 SVI 3105 B mc1458cp1 sgs
Text: Edge Index by Function 2 l e i . Voltage Regulators Voltage References Operational Amplifiers/Buffers Instrumentation Amplifiers Voltage Comparators Analog Switches Sample and Hold A to D, D to A 8 Industrial/Automotive/Functional Blocks 9 Audio, Radio and TV Circuits
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Untitled
Abstract: No abstract text available
Text: TOSHIBA {DI SC RE TE/ OPTO } T i D E ITGTTSSG 99D 16731 9 0 9 7 2 5 0 T O S H IB A Í D I S C R E T E / O P T O ¿Toihihn SEMICONDUCTOR TOSHIBA FIELD EFFECT TRANSISTOR 2 S K 6 4 4 TECHNICAL DATA SILICON N CHANNEL HOS TYPE 7T-M0S 1 ) INDUSTRIAL APPLICATIONS
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731 opto
Abstract: No abstract text available
Text: TOSHIBA -CDISCRETE/OPTO> 9097250 TOSHIBA ¿Toihilli TT DE I T C H 7 2 5 G 001t,731 fc, |~~ 99 0 <DI S C R E T E / O P T O SEMICONDUCTOR T O SH IB A F IE L D E F F E C T T R A N SIST O R 2 S TECHNICAL DATA S IL IC O N 16731 K 6 4 4 N CHANNEL HOS T Y PE I-M O S 1 )
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IT0T72SG
DT-37-1
100nA
250uA
10ViID
DFAIN-80URCE
EGA-2SK644-4
731 opto
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AIL 4
Abstract: 2SA1813
Text: Ordering number: EN3972 No.3972 SAXYO i 2SA1813 PNP Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amp, Driver, Muting Circuit Applications Features • Very small-sized package permitting 2SA1813-applied sets to be made smaller and slimmer.
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EN3972
2SA1813
2SAl813-applied
AIL 4
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2SK2058
Abstract: No abstract text available
Text: Ordering num ber: EN 4315 No.4315 2SK2058 N-Channel MOS Silicon FET Very High-Speed Switching Applications i Features - Low ON resistance. • Very high-speed switching. • Low-voltage drive. Absolute Maximum Ratings at Ta = 25°C Drain-to-Source Voltage
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2SK2058
100/iA
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Untitled
Abstract: No abstract text available
Text: A dvanced APT8065BVFR pow er Te c h n o lo g y 800V POWER MOS V 13A 0.650Q FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT8065BVFR
O-247
APT8065BVFR
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IRFSZ24A
Abstract: No abstract text available
Text: IRFSZ24A Advanced Power MOSFET FEATURES B V • ■ ■ ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area T 7 5 t Operating Temperature Lower Leakage Current : 10 MA Max. @ VOS = 60V
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IRFSZ24A
O-220F
IRFSZ24A
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2SK1641
Abstract: No abstract text available
Text: TO SHIBA 2SK1641 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt- M O SII 2 S K 1 641 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS 1 5.9 M A X.
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2SK1641
SC-65
2-16C1B
961001EAA2'
2SK1641
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2SC3820
Abstract: VEBO-15V Vebo 15V
Text: Ordering number: EN 2544B 1 N0.2544B _ 2SC3820 NPN Epitaxial Planar Type Silicon Transistor High hpE? AF Amp Applications Applications •Drivers, muting circuits Features • Adoption of FBET and MBIT processes • High DC current gain hpE = 800 to 3200
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2544B
2544B
2SC3820
25M-3/3
VEBO-15V
Vebo 15V
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2SK1731
Abstract: 32593TH EN3826
Text: Ordering n u m b e r:E N 3 8 2 6 _ 2SK1731 N-Channel MOS Silicon FET No.3826 Very High-Speed Switching Applications F eatu res •Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Its height onboard is 9.5mm. • Meets radial taping.
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EN3826
2SK1731
32593TH
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