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Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: Power Transistors 2SB1054 Silicon PNP triple diffusion planar type Unit: mm For high power amplification Complementary to 2SD1485 5.0±0.2 φ 3.2±0.1 15.0±0.2 • Excellent current IC characteristics of forward current transfer ratio hFE vs. collector • Wide area of safe operation ASO	Original	PDF	2SB1054 2SD1485
2SB1054 Abstract: 2SD1485 Text: Power Transistors 2SB1054 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1485 Unit: mm 5.0±0.2 0.7 15.0±0.3 (3.2) 11.0±0.2 15.0±0.2 φ 3.2±0.1 (3.5) Solder Dip 16.2±0.5 • Excellent collector current IC characteristics of forward current	Original	PDF	2SB1054 2SD1485 2SB1054 2SD1485
2SB1054 Abstract: 2SD1485 Text: Power Transistors 2SB1054 Silicon PNP triple diffusion planar type Unit: mm For high power amplification Complementary to 2SD1485 5.0±0.2 φ 3.2±0.1 15.0±0.2 • Excellent current IC characteristics of forward current transfer ratio hFE vs. collector • Wide area of safe operation ASO	Original	PDF	2SB1054 2SD1485 2SB1054 2SD1485
2SB1054 Abstract: 2SD1485 Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1054 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1485 Unit: mm 5.0±0.2 M Di ain sc te on na tin nc ue e/ d (0.7) 15.0±0.3 15.0±0.2	Original	PDF	2002/95/EC) 2SB1054 2SD1485 2SB1054 2SD1485
Untitled Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1054 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1485 Unit: mm 5.0±0.2 M Di ain sc te on na tin nc ue e/ d (0.7) 15.0±0.3 15.0±0.2	Original	PDF	2002/95/EC) 2SB1054 2SD1485
2SB1054 Abstract: 2SD1485 Text: Power Transistors 2SB1054 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1485 Unit: mm 5.0±0.2 0.7 15.0±0.3 (3.2) 11.0±0.2 15.0±0.2 (3.5) Solder Dip 16.2±0.5 φ 3.2±0.1 2.0±0.2 1.1±0.1 • Absolute Maximum Ratings TC = 25°C	Original	PDF	2SB1054 2SD1485 SC-92 2SB1054 2SD1485
2SB1156 Abstract: 2SD1707 Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1156 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1707 Unit: mm 5.0±0.2 M Di ain sc te on na tin nc ue e/ d (0.7) 15.0±0.3 (3.2) 11.0±0.2 • Features	Original	PDF	2002/95/EC) 2SB1156 2SD1707 SC-92 2SB1156 2SD1707
2SB1156 Abstract: 2SD1707 Text: Power Transistors 2SB1156 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1707 Unit: mm 5.0±0.2 0.7 15.0±0.3 (3.2) 11.0±0.2 • Features Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −130 V Collector-emitter voltage (Base open)	Original	PDF	2SB1156 2SD1707 SC-92 2SB1156 2SD1707
Vbe 8 V Abstract: ic shelf life low Vce sat PNP transistor 200ma pnp 2SB1156 2SD1707 Text: Power Transistors 2SB1156 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1707 Unit: mm 5.0±0.2 0.7 15.0±0.3 (3.2) 11.0±0.2 • Features ■ Absolute Maximum Ratings TC = 25°C Symbol Rating Unit Collector-base voltage (Emitter open)	Original	PDF	2SB1156 2SD1707 Vbe 8 V ic shelf life low Vce sat PNP transistor 200ma pnp 2SB1156 2SD1707
2SB1054 Abstract: 2SD1485 Text: Power Transistors 2SB1054 Silicon PNP triple diffusion planar type Unit: mm For high power amplification Complementary to 2SD1485 5.0±0.2 φ 3.2±0.1 15.0±0.2 • Excellent current IC characteristics of forward current transfer ratio hFE vs. collector • Wide area of safe operation ASO	Original	PDF	2SB1054 2SD1485 2SB1054 2SD1485
Untitled Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1156 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1707 Unit: mm 5.0±0.2 M Di ain sc te on na tin nc ue e/ d (0.7) 15.0±0.3 (3.2) 11.0±0.2 • Features	Original	PDF	2002/95/EC) 2SB1156 2SD1707 SC-92