CBC2518T2R2M
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS Wire-wound Chip Power Inductors CB series CBC2518T2R2M Features Item Summary 2.2 H(±20%), 890mA, 1100mA, 1007 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table External Dimensions
|
Original
|
CBC2518T2R2M
890mA,
1100mA,
2000pcs
96MHz
890mA
1100mA
68MHz
CBC2518T2R2M
|
PDF
|
UR18650s
Abstract: No abstract text available
Text: Lithium Ion UR18650S Features & Benefits Specifications • High drain model high power density • Long, stable power with a flat discharge voltage • Ideal for power tools, Ebikes, and robotics. Rated capacity(1) Min. 1100mAh Capacity(2) Min. 1100mAh
|
Original
|
UR18650S
1100mAh
1200mAh
770mA,
UR18650s
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS Wire-wound Chip Power Inductors BR series BRC2012T2R2MD Features Item Summary 2.2 H(±20%), 1100mA, 1000mA, 0805 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table External Dimensions
|
Original
|
BRC2012T2R2MD
1100mA,
1000mA,
2000pcs
1100mA
1000mA
350MHz
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS Wire-wound Chip Power Inductors BR series BRC2012T2R2MD Features Item Summary 2.2 H(±20%), 1100mA, 1000mA, 0805 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table External Dimensions
|
Original
|
BRC2012T2R2MD
1100mA,
1000mA,
2000pcs
1100mA
1000mA
350MHz
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS Wire-wound Chip Power Inductors BR series BRC2012T1R5MD Features Item Summary 1.5 H(±20%), 1200mA, 1100mA, 0805 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table External Dimensions
|
Original
|
BRC2012T1R5MD
1200mA,
1100mA,
2000pcs
1200mA
1100mA
390MHz
|
PDF
|
KSC1730
Abstract: No abstract text available
Text: KSC1730 KSC1730 TV VHF, UHF Tuner Oscillator • High Current Gain Bandwidth Product : fT=1100MHz • Output Capacitance : COB=1.5pF MAX. TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
|
Original
|
KSC1730
1100MHz
KSC1730
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS SMD Power Inductors NR series S type NRS8040T101MJGK Features Item Summary 100 H(±20%), 1100mA, 1000mA Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 1000pcs Products characteristics table External Dimensions
|
Original
|
NRS8040T101MJGK
1100mA,
1000mA
1000pcs
100kHz
1100mA
00kHz
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS SMD Power Inductors NR series S type NRS4010T3R3MDGG Features Item Summary 3.3 H(±20%), 1100mA, 1400mA Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 5000pcs Products characteristics table External Dimensions
|
Original
|
NRS4010T3R3MDGG
1100mA,
1400mA
5000pcs
100kHz
1100mA
58MHz
|
PDF
|
1025MHz filter
Abstract: No abstract text available
Text: JXWBLB-T-BP-1100-100-9CS 1100MHz Cavity Band Pass Filter TEST REPORT For JXWBLB-T-BP-1100-100-9CS 1 JXWBLB-T-BP-1100-100-9CS 1100MHz Cavity Band Pass Filter Technical Specification 1.05~1.15 Frequency Range GHz Insertion Loss at Center Frequency(dB) 1 max
|
Original
|
JXWBLB-T-BP-1100-100-9CS
1100MHz
1025MHz
1175MHz
05GHz
15GHz
025GHz
1025MHz filter
|
PDF
|
100E131
Abstract: No abstract text available
Text: SY10E131 SY100E131 FINAL 4-BIT D FLIP-FLOP DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ 1100MHz min. toggle frequency Extended 100E VEE range of –4.2V to –5.5V Differential output Individual and common clocks Indivldual asynchronous reset Paired asynchronous sets
|
Original
|
SY10E131
SY100E131
1100MHz
MC10E/100E131
28-pin
SY10/100E131
J28-1
SY10E131JC
SY10E131JCTR
100E131
|
PDF
|
TDE0160
Abstract: TDE0160DP TDE01
Text: TDE0160 PROXIMITY DETECTOR . . . SUPPLY VOLTAGE : +4 TO +36V SUPPLY CURRENT : < 1.2mA OUTPUT TRANSISTORS : I = 20mA ; VCE sat ≤ 1100mV OSCILLATOR FREQUENCY : < 1MHz LOSS RESISTANCE : 5 TO 50kΩ. DIP14 DESCRIPTION The TDE0160 is designed to detect metal bodies
|
Original
|
TDE0160
1100mV
DIP14
TDE0160
TDE0160DP
DIP14)
0160FP
TDE0160DP
TDE01
|
PDF
|
GS9002
Abstract: GS9005A GS9008A GS9008ACKA GS9008ACKAE3 GS9015A GS9028
Text: GENLINX GS9008A Cable Driver with Two Adjustable Outputs DATA SHEET DESCRIPTION • two output pairs, adjustable from 0 to 1100mVp-p into 75 Ω loads The GENLINX™ GS9008A is a bipolar integrated circuit designed to drive two 75 Ω co-axial cables at data rates
|
Original
|
GS9008A
1100mVp-p
400Mb/s.
170mW
GS9002
GS9005A
GS9008ACKA
GS9008ACKAE3
GS9015A
GS9028
|
PDF
|
29782
Abstract: TYPICAL APPLICATION DATA 5501 GS9002 GS9005A GS9007A GS9009A GS9009ACKB GS9009ACKBE3 GS9015A 14 PIN GENNUM
Text: GENLINX GS9009A Cable Driver with Four Adjustable Outputs DATA SHEET DESCRIPTION • two output pairs, adjustable from 0 to 1100mVp-p into 75 Ω loads The GENLINX™ GS9009A is a bipolar integrated circuit designed to drive four 75 Ω co-axial cables at data rates
|
Original
|
GS9009A
1100mVp-p
400Mb/s.
GS9002,
GS9004A,
GS9005A
GS9015A
29782
TYPICAL APPLICATION DATA 5501
GS9002
GS9007A
GS9009ACKB
GS9009ACKBE3
GS9015A
14 PIN GENNUM
|
PDF
|
Untitled
Abstract: No abstract text available
Text: UMZ-533-D16-G UMZ-533-D16G MICROSTRIP Voltage controlled oscillator MICROSTRIP VOLTAGE CONTROLLED OSCILLATOR Package: D16, 12.7mm x 12.7mm x 5.59mm VCC Features Ultra-Linear Tuning/Low Phase Noise Frequency: 1000MHz to 1100MHz Resonator: Microstrip
|
Original
|
UMZ-533-D16-G
UMZ-533-D16G
1000MHz
1100MHz
100kHz
1000kHz
10000kHz
12dBr,
DS120109
|
PDF
|
|
|
LT5571
Abstract: LT5568
Text: LT5571 620MHz – 1100MHz High Linearity Direct Quadrature Modulator DESCRIPTION FEATURES Direct Conversion from Baseband to RF High Output: –4.2dB Conversion Gain High OIP3: 21.7dBm at 900MHz Low Output Noise Floor at 20MHz Offset:
|
Original
|
LT5571
620MHz
1100MHz
900MHz
20MHz
159dBm/Hz
42dBm
53dBc
LT5571
LT5568
|
PDF
|
SY100E151
Abstract: SY10E151 SY10E151JI
Text: SY10E151 SY100E151 6-BIT D REGISTER Micrel, Inc. SY10E151 SY100E151 DESCRIPTION FEATURES • 1100MHz toggle frequency ■ Extended 100E VEE range of –4.2V to –5.46V The SY10/100E151 offer 6 edge-triggered, high-speed, master-slave D-type flip-flops with differential outputs,
|
Original
|
SY10E151
SY100E151
1100MHz
SY10/100E151
M9999-032006
SY100E151
SY10E151
SY10E151JI
|
PDF
|
transistor t9018
Abstract: 9018 T9018F
Text: T9018 9018 NPN EPITAXIAL SILICON TRANSISTOR AM/FM IF AMPLIFIER,LOCAL OSCILIATOR OF FM/VHF TUNER * High Current Gain Bandwidth Product fT=1100MHz 1. 1.BASE 2.EMITTER 3.COLLECTOR ABSOLUTE MAXIMUM RATINGS at Ta=25 Rating 2.4 1.3 Unit Vcbo 30 V Collector-Emitter Voltage
|
Original
|
T9018
1100MHz
100uA
062in
T9018F
300uS
transistor t9018
9018
|
PDF
|
KSC2757
Abstract: No abstract text available
Text: KSC2757 NPN EPITAXIAL SILICON TRANSISTOR MIXER OSCILLATOR FOR VHF TUNER SOT-23 HIGH fT fT=1100MHz TYP. ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation
|
Original
|
KSC2757
OT-23
1100MHz
KSC2757
|
PDF
|
HR-AAC
Abstract: CELL 1100MAH
Text: Cell Type HR-AAC Specifications Type : Nickel-Metal Hydride Battery Size : AA Typical 1100mAh Minimum 950mAh Capacity 1 14.2 mm Nominal Voltage 1.2V Charging Current x Time 50.0 mm Fast Charge 2) 1100 mA x about 1.1h Charge Fast Charge 2) Condition 0°C - 40°C
|
Original
|
1100mAh
950mAh
30days
90days
1000Hz)
110mA
220mA
1100mA
220mA,
HR-AAC
CELL
1100MAH
|
PDF
|
Untitled
Abstract: No abstract text available
Text: GEC PLE S S EY < U N I PRELIM IN ARY INFORMATION l.J c 0S3934 - 2.7 SP8713 1100MHz VERY LOW CURRENT THREE MODULUS DIVIDER The S P 8713 is a sw itchab le divide by 64/65/72 programmable divider which is guaranteed to operate up to 1100MHz. It will operate ram a supply of 2.7V to 5.5V and
|
OCR Scan
|
0S3934
SP8713
1100MHz
1100MHz.
NJ88C51.
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Si GEC PLESSEY PRELIM IN ARY INFORMATION S E M I C O N D U C T O R S SP8715 1100MHz VERY LOW CURRENT MULTI-MODULUS DIVIDER The SP8715 is a switchable divide by 64/65, 128/129 programmable divider which is guaranteed to operate up to 1100MHz. It will operate from a supply of 2.7V to 5.5V and
|
OCR Scan
|
SP8715
1100MHz
SP8715
1100MHz.
37bfl522
37bflS22
GD22323
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET ASSP Dual Serial Input PLL Frequency Synthesizer MB15F07SL • DESCRIPTION The Fujitsu MB15F07SL is a dual, serial input Phase Locked Loop PLL frequency synthesizer with two 1100MHz prescalers. Both prescalers have a dual modulus division ratio of 64/65 or 128/129 enabling pulse swallow operation.
|
OCR Scan
|
MB15F07SL
MB15F07SL
1100MHz
|
PDF
|
Untitled
Abstract: No abstract text available
Text: &1H > 1 !W i w GEC P L ES S E Y JULY 1993 S E M I C O N D U C T O R S PRELIMINARY INFORMATION DS3830-1.2 SP8715 1100MHz VERY LOW CURRENT MULTI-MODULUS DIVIDER The SP8715 is a switchable divide by 64/65, 128/129 programmable divider which is guaranteed to operate up to
|
OCR Scan
|
DS3830-1
SP8715
1100MHz
SP8715
1100MHz.
|
PDF
|
SLM-090A1
Abstract: SLM-090A
Text: HITACHI “ METALS 800 / 900 MHz Band Chip Multilayer D.B.MIXER Model No. SLM-090A1 Equivalent Circuits Shape & Size Specifications Lo Level +7dBm Typ. Conversion Loss Frequency RF:700-1000MHz L0:700-1100MHZ IF :DC - 400MHz Impedance Isolation LO-RF:18dB Min. 30dB Typ.
|
OCR Scan
|
SLM-090A1
700-1000MHz
700-1100MHZ
400MHz
15dBTyp.
15dBmTyp.
-10dBm
45MHz
LM-SLM-090A1-9804A
SLM-090A1
SLM-090A
|
PDF
|
