RURG30100
Abstract: RURG3070 RURG3080 RURG3090
Text: S E M I C O N D U C T O R RURG3070, RURG3080, RURG3090, RURG30100 30A, 700V - 1000V Ultrafast Diodes April 1995 Features Package • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . . . <110ns JEDEC STYLE 2 LEAD TO-247 ANODE o • Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . .+175 C
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RURG3070,
RURG3080,
RURG3090,
RURG30100
110ns
O-247
RURG3090
RURG30100
RURG3070
RURG3080
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40N90C3D1
Abstract: No abstract text available
Text: Advance Technical Information IXYH40N90C3 900V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 900V 40A 2.5V 110ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ
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IXYH40N90C3
IC110
110ns
O-247
062in.
40N90C3D1
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SL32
Abstract: No abstract text available
Text: SL32 S/T 4B8M2A-Axx 8M X 32 DRAM FPM SIMM Memory Module FEATURES • • • • • • • • • GENERAL DESCRIPTION Performance range: tRAC tCAC tRC SL32(S/T)4B8M2A-A60 60ns 15ns 110ns SL32(S/T)4B8M2A-A70 70ns 20ns 130ns SL32(S/T)4B8M2A-A80 80ns 20ns
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4B8M2A-A60
110ns
4B8M2A-A70
130ns
4B8M2A-A80
150ns
cycles/32ms
24-pin
A0-A10
SL32
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M29KW032E
Abstract: TFBGA48
Text: M29KW032E 32 Mbit 2Mb x16, Uniform Block 3V Supply LightFlash Memory PRODUCT PREVIEW FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Read – VPP = 11.4V to 12.6V for Program and Erase ■ ACCESS TIME: 90, 110ns ■ PROGRAMMING TIME
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M29KW032E
110ns
TSOP48
TFBGA48
0020h
88ACh
M29KW032E
TFBGA48
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STI324000-60
Abstract: STI324000-70 STI324000-80
Text: STI324000 4M X 32 DRAM SIMM Memory Module FEATURES • • • • • • • • • GENERAL DESCRIPTION Performance range: tRAC tCAC tRC STI324000-60 60ns 15ns 110ns STI324000-70 70ns 20ns 130ns STI324000-80 80ns 20ns 150ns SiliconTech’s STI324000 is a 4M bits x 32 Dynamic RAM high
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STI324000
110ns
STI324000-70
130ns
STI324000-80
STI324000
24-pin
72-pin
STI324000-60
STI324000-60
STI324000-70
STI324000-80
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SL32
Abstract: SL32S4A1M1A-A60 SL32T4A1M1A-A60 4A1M1A-A70
Text: SL32 S/T 4A1M1A-A60 1M X 32 DRAM SIMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: tCAC tRC SL32(S/T)4A1M1A-A60 60ns 15ns 110ns SL32(S/T)4A1M1A-A70 70ns 20ns 130ns SL32(S/T)4A1M1A-A80 80ns 20ns 150ns tRAC • • • • • • • •
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4A1M1A-A60
4A1M1A-A60
110ns
4A1M1A-A70
130ns
4A1M1A-A80
20-pin
72-pin
150ns
SL32
SL32S4A1M1A-A60
SL32T4A1M1A-A60
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Untitled
Abstract: No abstract text available
Text: Memory Module Specifications KHX1600C9D3K6/12GX 12GB 2GB 256M x 64-Bit x 6 pcs. DDR3-1600MHz CL9 240-Pin DIMM Kit SPECIFICATIONS CL(IDD) 9 cycles Row Cycle Time (tRCmin) 49.5ns (min.) Refresh to Active/Refresh Command Time (tRFCmin) 110ns Row Active Time (tRASmin)
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KHX1600C9D3K6/12GX
64-Bit
DDR3-1600MHz
240-Pin
110ns
KHX1600C9D3K6/12GX
2048MB)
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Untitled
Abstract: No abstract text available
Text: Memory Module Specifications KHX1600C7D3K3/6GX 6GB 2GB 256M x 64-Bit x 3 pcs. DDR3-1600MHz CL7 240-Pin DIMM Kit SPECIFICATIONS CL(IDD) 9 cycles Row Cycle Time (tRCmin) 49.5ns (min.) Refresh to Active/Refresh Command Time (tRFCmin) 110ns Row Active Time (tRASmin)
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KHX1600C7D3K3/6GX
64-Bit
DDR3-1600MHz
240-Pin
110ns
KHX1600C7D3K3/6GX
2048MB)
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Untitled
Abstract: No abstract text available
Text: SL72B4B4M4F-A60V 4M X 72 Bit DRAM 168-Pin DIMM with EDO, ECC, and Buffers FEATURES • Performance range: tCAC tRC tRAC 60ns • • • • • • • • • GENERAL DESCRIPTION 20ns 110ns The SiliconTech SL72B4B4M4F-A60V is a 4M x 72 bits Dynamic RAM DRAM Dual In-line Memory Module (DIMM). The module
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SL72B4B4M4F-A60V
168-Pin
110ns
SL72B4B4M4F-A60V
24-pin
300-mil
168-pin
A1-A11
DQ40-43
DQ8-11
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SL64B6A2M1E-A60
Abstract: No abstract text available
Text: SL64B6A2M1E-A60 2M X 64 Bit DRAM DIMM with Extended Data Out EDO FEATURES • Performance range: tCAC tRC tRAC 60ns • • • • • • • • GENERAL DESCRIPTION 17ns 110ns The SiliconTech SL64B6A2M1E-A60 is a 2M x 64 bit Dynamic RAM (DRAM) Dual In-line Memory Module (DIMM). This
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SL64B6A2M1E-A60
110ns
SL64B6A2M1E-A60
42-pin
168-pin
DQ36-43
DQ45-52
DQ54-61
DQ63-70
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ta25 du14
Abstract: No abstract text available
Text: ST1641OOOAG1 -xxLVG 144-PIN SO-DIMMS 1M X 64 Bits DRAM SO-DIMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: *R A C *C A C ‘ rc STI. •-60LVG 60ns 15ns 110ns STI. •-70LVG 70ns 20ns 130ns STI. •-80LVG 80ns 20ns 150ns The Simple Technology STI641000AG1 is a 1M x 64 bits
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ST1641OOOAG1
144-PIN
STI641000AG1
44-pin
-60LVG
ta25 du14
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jeida+dram+88+pin
Abstract: jeida 88 pin jeida dram 88 pin
Text: STI321000C1 -xxVx 88-PIN CARDS 1M X 32 DRAM Card FEATURES • Performance range: ^RAC ^CAC *RC STI321000C1-60Vx 60ns 15ns 110ns STI32100OC1-7OVx 70ns 18ns 130ns STI321000C1-80Vx 80ns 20ns 150ns The Simple Technology STI321000C1 is a 1M bit x 32 Dynamic RAM high density memory card. The Simple Technology
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STI321000C1
STI321000C1-60Vx
STI32100OC1-7OVx
STI321000C1-80Vx
110ns
130ns
150ns
88-PIN
jeida+dram+88+pin
jeida 88 pin
jeida dram 88 pin
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jeida dram 88 pin
Abstract: STI324000C1
Text: STI324000C1 -X X V 88-PIN CARDS 4M X 32 DRAM Card FEATURES • GENERAL DESCRIPTION Performance range: ^RAC Wc *RC STI324000C1 -60V 60ns 15ns 110ns STI324000C1-70V 70ns 20ns 130ns The Simple Technology STI324000C1 is a 4M bil x 32 Dynamic RAM high density memory card. The Simple Technology
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STI324000C1
88-PIN
110ns
130ns
STI324000C1-70V
24pin
jeida dram 88 pin
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Untitled
Abstract: No abstract text available
Text: STI368003 72-PIN SIMMS 8M X 36 BITS DRAM SIMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: ^RAC ^CAC ^RC STI368003-60 60ns 15ns 110ns STI368003-70 70ns 20ns 130ns • Fast Page Mode operation • CAS-before-RAS refresh capability • RAS-only and Hidden refresh capability
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STI368003
STI368003-60
STI368003-70
110ns
130ns
72-PIN
STI368003
24pin
28-pin
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Untitled
Abstract: No abstract text available
Text: STI338000 72-PIN SIMMS 8M X 33 Bits DRAM SIMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: *RAC ^CAC I rc STI338000-60 60ns 15ns 110ns STI338000-70 70ns 20ns 130ns STI338000-80 80ns 20ns 150ns The Simple Technology STI338000 is a 8M x 33 bits Dynamic
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STI338000
STI338000-60
STI338000-70
STI338000-80
110ns
130ns
150ns
72-PIN
STI338000
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Untitled
Abstract: No abstract text available
Text: STI641004D1-60G 168-PIN DIMMS 1M X 64 Bit DRAM DIMM with Extended Data Out EDO FEATURES • GENERAL DESCRIPTION Performance range: ^RAC ^CAC *RC *HPC 60ns 17ns 110ns 25ns • • EDO (Hyper) Mode operation CAS-before-RAS refresh capability • RAS-only refresh capability
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STI641004D1-60G
168-PIN
110ns
STI641004D1-60G
42-pin
168pin
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Untitled
Abstract: No abstract text available
Text: STI32256 72-PIN SIMMS 256K X 32 DRAM SIMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: ^RAC ^CAC ^RC STI32256-60 60ns 15ns 110ns STI32 2 56-70 70ns 20ns 130ns STI32256-80 80ns 20ns 150ns The Simple Technology STI32256 is a 256K bit x 32 Dynamic
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STI32256
STI32256-60
STI32
STI32256-80
110ns
130ns
150ns
72-PIN
STI32256
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25S557
Abstract: AM25S557 Am25S05
Text: Am25S557/Am25S558 Am25S557/Am25S558 Eight-Bit by Eight-Bit Combinatorial Multiplier DISTINCTIVE CHARACTERISTICS Multiplies two 8 -bit numbers - 16-bit output Combinatorial - no clocks required Full 8 x 8 multiply in 45ns typ. Cascades to 1 6 x 1 6 in 110ns typ.
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Am25S557/Am25S558
16-bit
110ns
Am25S557
Am25S558
1C000380
25S557
Am25S05
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KMM5321000BV-7
Abstract: KMM5321000BV-6 1Mx4 dram simm caso Samsung Capacitor DO30 KMM5321000BV-8
Text: SAMSUNG ELECTRONICS INC b?E D • O O lS llb KMM5321000BV/BVG fi^b DRAM MODULES 1Mx32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: tftAC • • • • • • • tcAc I rc KMM5321000BV-6 60ns 15ns 110ns KMM5321000BV-7 70ns
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KMM5321000BV/BVG
1Mx32
KMM5321000BV-6
KMM5321000BV-7
110ns
130ns
150ns
KMM5321000BV-8
cycles/16ms
KMM5321000BV
1Mx4 dram simm
caso
Samsung Capacitor
DO30
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251C
Abstract: 2SK1214 H150
Text: P ow er F-MOS FET 2SK 1214 2SK1214 Silicon N-channel Power F-M O S FET Package Dimensions • Features • • • • Low ON resistan ce RDS on : RDs (on) l = 0 .0 6 il (typ.) High sw itching rate : tf= 110ns (typ.) No secondary breakdow n Low voltage drive is possible (VGs= 4 V ).
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2SK1214
110ns
251C
2SK1214
H150
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72-XM
Abstract: 7270m
Text: WHITE /MICROELECTRONICS W PD 8M 72-XM D C 8Mx72 DRAM DIM M FEATURES GENERAL DESCRIPTION Perform ance range: ^RAC ^C A C ^RC ^H P C W PD8M 72-60M DC 60ns 20ns 110ns 30ns W PD8M 72-70M DC 70ns 25ns 130ns 33ns The W P D8M 72-XM D C is a 8M x 72 bit Dynamic RAM high
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72-XM
8Mx72
24-pin
168-pin
7270m
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25S558
Abstract: Am25LS14 block diagram of 8*8 array multiplier CD003040 Am25S05
Text: 8SSSSZUIV/ZSSSSZUJV A m 25S 5 57 /A m 2 5S 55 8 Eight-Bit by Eight-Bit Combinatorial Multiplier DISTINCTIVE CHARACTERISTICS Multiplies tw o 8 -bit numbers - 16-bit output Com binatorial - no clocks required Full 8 x 8 m ultiply in 45ns typ. Cascades to 16 x 16 in 110ns typ.
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Am25S557/Am25S558
16-bit
110ns
Am25S557
Am25S558
IC000380
25S558
Am25LS14
block diagram of 8*8 array multiplier
CD003040
Am25S05
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Untitled
Abstract: No abstract text available
Text: w # S G S -T H O M S O N M27V160 V # « RitlD M li[Lli©inS lii!lD©i 16 Mb 2Mb x 8 or 1Mb x 16) LOW VOLTAGE UV EPROM and OTP EPROM NOT FOR NEW DESIGN • LOW VOLTAGE READ OPERATION: 3V to 5.5V ■ FAST ACCESS TIME: 110ns ■ BYTE-WIDE or WORD-WIDE CONFIGURABLE
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M27V160
110ns
FDIP42W
50sec.
M27C160
0020h
M27V160is
M27W160
M27V160
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON llllMJilLliMWIiei M27V800 LOW VOLTAGE 8 Megabit 1 Meg x 8 or 512K x 16 UV EPROM and OTP EPROM PRELIMINARY DATA LOW VOLTAGE READ OPERATION: 3V to 5.5V FAST ACCESS TIME: 110ns WORD-WIDE or BYTE-WIDE CONFIGURABLE 8 Megabit MASK ROM REPLACEMENT LOW POWER CONSUMPTION
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M27V800
110ns
FDIP42W
26sec.
M27V800
M27C800
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