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    11N40 Search Results

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    11N40 Price and Stock

    Mallory Sonalert Products Inc PK-11N40PQ

    BUZZER PIEZO 5V 12MM TH
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    DigiKey PK-11N40PQ Bulk 4,278 1
    • 1 $3.27
    • 10 $2.663
    • 100 $2.1703
    • 1000 $1.81591
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    RS PK-11N40PQ Bulk 1
    • 1 $4.69
    • 10 $3.99
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    Master Electronics PK-11N40PQ 668
    • 1 -
    • 10 $3.77
    • 100 $2.98
    • 1000 $2.06
    • 10000 $1.89
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    Sager PK-11N40PQ 500 1
    • 1 $2.64
    • 10 $2.64
    • 100 $2.64
    • 1000 $2.34
    • 10000 $2.2
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    onsemi FQP11N40C

    MOSFET N-CH 400V 10.5A TO220-3
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    DigiKey FQP11N40C Tube 284 1
    • 1 $2.36
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    • 1000 $0.90075
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    Mouser Electronics FQP11N40C 1,748
    • 1 $1.14
    • 10 $0.913
    • 100 $0.865
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    Newark FQP11N40C Bulk 196 1
    • 1 $1.4
    • 10 $1.3
    • 100 $1.21
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    Rochester Electronics FQP11N40C 7,354 1
    • 1 $1
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    TME FQP11N40C 59 1
    • 1 $2
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    Richardson RFPD FQP11N40C 1,000
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    Avnet Asia FQP11N40C 17 Weeks 2,000
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    Avnet Silica FQP11N40C 18 Weeks 50
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    Chip-Germany GmbH FQP11N40C 98
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    EBV Elektronik FQP11N40C 19 Weeks 50
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    Nisshinbo Micro Devices R3111N401A-TR-FE

    IC SUPERVISOR 1 CHANNEL SOT23-5
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    DigiKey R3111N401A-TR-FE Cut Tape 91 1
    • 1 $0.52
    • 10 $0.367
    • 100 $0.285
    • 1000 $0.24222
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    R3111N401A-TR-FE Digi-Reel 91 1
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    R3111N401A-TR-FE Reel 3,000
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    Nisshinbo Micro Devices R3111N401C-TR-FE

    IC SUPERVISOR 1 CHANNEL SOT23-5
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    DigiKey R3111N401C-TR-FE Cut Tape 79 1
    • 1 $0.52
    • 10 $0.367
    • 100 $0.285
    • 1000 $0.24222
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    R3111N401C-TR-FE Digi-Reel 79 1
    • 1 $0.52
    • 10 $0.367
    • 100 $0.285
    • 1000 $0.24222
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    onsemi FQI11N40TU

    MOSFET N-CH 400V 11.4A I2PAK
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    DigiKey FQI11N40TU Tube
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    11N40 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    11N4

    Abstract: 11N40
    Text: UNISONIC TECHNOLOGIES CO., LTD 11N40 Power MOSFET 11.4A, 400V N-CHANNEL POWER MOSFET „ DESCRIPTION The 11N40 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for


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    PDF 11N40 11N40 QW-R502-219 11N4

    11n40

    Abstract: 200v 3A ultra fast recovery diode aa 118 diode 11n40l 219aa 11N40T
    Text: UNISONIC TECHNOLOGIES CO., LTD 11N40 Power MOSFET 400 V N-CHANNEL MOSFET „ DESCRIPTION The 11N40 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for


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    PDF 11N40 11N40 11N40L 11N40G 11N40-TF3-T QW-R502-219 200v 3A ultra fast recovery diode aa 118 diode 11n40l 219aa 11N40T

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 11N40 Power MOSFET 11.4A, 400V N-CHANNEL POWER MOSFET „ DESCRIPTION The 11N40 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for


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    PDF 11N40 11N40 11N40L-TA3-T 11N40G-TA3-T O-220 QW-R502-219

    9n90c

    Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
    Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W


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    PDF 2N7000 2N7000A 2N7000K 70Max 45Max 55Max 80Max 9n90c 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS

    marking code dh fairchild

    Abstract: g995 11n40 595D 11N40T FQPF11N40T
    Text:   QFET                                             !     "


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    PDF FQPF11N40 FQPF11N40T marking code dh fairchild g995 11n40 595D 11N40T

    triac zd 607

    Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
    Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.


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    PDF SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845

    11N400

    Abstract: D202E
    Text: E RECTROIU SEMICONDUCTOR THRU TECHNICAL SPECIFICATION 1M4W7G GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER VOLTAGE RANGE-50 to 1000 Volts CURRENT-1.0 Ampere FEATURES: * High reliability * Low cost * Low leakage * Low forward voltage drop * High current capability


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    PDF RANGE-50 DO-41 UL94V-0 D-202E 1N4001G 1N4007G) 11N400 D202E

    11N400

    Abstract: No abstract text available
    Text: Q RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER VOLTAGE RANGE-50 to 1000 Volts CURRENT-1.0 Ampere FEATURES: * High reliability * Low cost * Low leakage * Low forward voltage drop * High current capability * G lass passivated junction


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    PDF RANGE-50 11N400

    1C501

    Abstract: L5002 MIC5010AJ 4N35 applications
    Text: MIC5010 Full-Featured High- or Low-Side MOSFET Driver General Description Features The M IC5010 is the full-featured member of the Micrel MIC501X driver family. These ICs are designed to drive the gate of an N-channel power MOSFET above the supply rail in high-side power switch applications. The M IC5010 is


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    PDF MIC5010 MIC5010 MIC501X IC5010 1C501 L5002 MIC5010AJ 4N35 applications

    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


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