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Text: DF2S6.2SC 東芝ＥＳＤ保護用ダイオード DF2S6.2SC 単位: mm ○ ESD 保護用 ※本製品はＥＳＤ保護用ダイオードでありＥＳＤ保護用以外の用途 0.19±0.02 定電圧ダイオード用途を含むがこれに限らない には使用はできません。
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JDV2S38SC
Abstract: No abstract text available
Text: JDV2S38SC TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type JDV2S38SC VCO for UHF Band Radio Low Series Resistance : rs = 0.48 Ω typ. • A two-terminal ultra-small package supports high-density mounting and the downsizing of end products
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JDV2S38SC
JDV2S38SC
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JDV2S31SC
Abstract: No abstract text available
Text: JDV2S31SC TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S31SC VCO for UHF Band Radio Low series resistance : rs = 0.23 Ω typ. • A two-terminal ultra-small package supports high-density mounting and the downsizing of end products. Lead (Pb)-free. 0.62±0.03
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JDV2S31SC
470MHz
JDV2S31SC
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Untitled
Abstract: No abstract text available
Text: JDP2S08SC TOSHIBA Diode Silicon Epitaxial PIN Type JDP2S08SC Unit:mm • Suitable for reducing set’s size as a result from enabling high-density mounting due to 2-pin small packages. • Low series resistance: rs = 1.0 Ω typ. • Low capacitance: CT = 0.21 pF (typ.)
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JDP2S08SC
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Abstract: No abstract text available
Text: JDV2S28SC TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S28SC VCO for UHF Band Radio Unit: mm High Capacitance Ratio : C1V/C3V = 2.17 typ. • A two-terminal ultra-small package supports high-density mounting and the downsizing of end products. • Lead (Pb)-free.
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JDV2S28SC
470MHz
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Untitled
Abstract: No abstract text available
Text: DF2S6.8SC TOSHIBA Diodes for Protecting against ESD DF2S6.8SC Product for Use Only as Protection against Electrostatic Discharge ESD . 0.19±0.02 0.025±0.015 Absolute Maximum Ratings (Ta = 25°C) 0.38 ２ 0.62±0.03 * This product is for protection against electrostatic discharge (ESD) only
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Abstract: No abstract text available
Text: DSF01S30SC TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type DSF01S30SC High-Speed Switching Application 0.1 9±0.02 Unit: mm Reverse voltage VR 30 V Average forward current IO 100* mA Surge current 10ms IFSM 2 A Junction temperature Tj 125 °C Tstg
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DSF01S30SC
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Untitled
Abstract: No abstract text available
Text: JDH2S02SC 東芝ダイオード シリコンエピタキシャルショットキバリア形 JDH2S02SC ○ UHF バンド検波回路用 0.19±0.02 外形が小さい。 1 0.025±0.015 0.38 ２ 0.62±0.03 • 単位: mm 2 絶対最大定格 Ta = 25°C 0.19±0.02
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JDH2S02SC
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Untitled
Abstract: No abstract text available
Text: JDH2S02SC TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type JDH2S02SC UHF Band Mixer 0.19±0.02 Suitable for reducing set size through the use of a two-pin small package supporting high-density mounting 1 0.025±0.015 0.38 ２ 0.62±0.03 • Unit: mm 2
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JDH2S02SC
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Abstract: No abstract text available
Text: JDV2S25SC TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S25SC VCO for UHF Band Radio A two-terminal ultra-small package supports high-density mounting and the downsizing of end products. ２ 0.025±0.015 Low series resistance : rs = 0.47 ohm typ. • 0.38
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JDV2S25SC
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Untitled
Abstract: No abstract text available
Text: DSF01S30SC TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type DSF01S30SC High-Speed Switching Application 0.1 9±0.02 Unit: mm Abusolute Maximum Ratings Ta = 25°C Reverse voltage VR 30 V Average forward current IO 100* mA Surge current (10ms) IFSM 2
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DSF01S30SC
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JDP2S08SC
Abstract: No abstract text available
Text: JDP2S08SC TOSHIBA Diode Silicon Epitaxial PIN Type JDP2S08SC Unit:mm • Suitable for reducing set’s size as a result from enabling high-density mounting due to 2-pin small packages. • Low series resistance: rs = 1.0 Ω typ. • Low capacitance: CT = 0.21 pF (typ.)
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JDP2S08SC
JDP2S08SC
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JDV2S31SC
Abstract: No abstract text available
Text: JDV2S31SC TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S31SC VCO for UHF Band Radio A two-terminal ultra-small package supports high-density mounting and the downsizing of end products. ２ Absolute Maximum Ratings Ta = 25°C 0.19±0.02 １ 0.32±0.03
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JDV2S31SC
JDV2S31SC
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Untitled
Abstract: No abstract text available
Text: JDH2S02SC TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type JDH2S02SC UHF Band Mixer 0.19±0.02 Suitable for reducing set size through the use of a two-pin small package supporting high-density mounting 1 0.19±0.02 １ 0.32±0.03 Rating Unit Maximum peak reverse voltage
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JDH2S02SC
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JDV2S27SC
Abstract: No abstract text available
Text: JDV2S27SC TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S27SC VCO for UHF Band Radio 0.19±0.02 High Capacitance Ratio : C1V/C4V = 2.9 typ. A two-terminal ultra-small package supports high-density mounting and the downsizing of end products. • Lead (Pb)-free.
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JDV2S27SC
470MHz
JDV2S27SC
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Untitled
Abstract: No abstract text available
Text: JDH2S02SC TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type JDH2S02SC UHF Band Mixer • Unit: mm Suitable for reducing set size through the use of a two-pin small package supporting high-density mounting 1 2 Absolute Maximum Ratings Ta = 25°C Characteristic
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JDH2S02SC
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Text: JDV2S31SC TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S31SC VCO for UHF Band Radio A two-terminal ultra-small package supports high-density mounting and the downsizing of end products. ２ Absolute Maximum Ratings Ta = 25°C 0.19±0.02 １ 0.32±0.03
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JDV2S31SC
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transistor 2sc 18
Abstract: No abstract text available
Text: DF2S8.2SC TOSHIBA Diodes for Protecting against ESD DF2S8.2SC Product for Use Only as Protection against Electrostatic Discharge ESD . 0.19±0.02 0.025±0.015 Absolute Maximum Ratings (Ta = 25°C) 0.38 ２ 0.62±0.03 *This product is for protection against electrostatic discharge (ESD) only
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JDV2S25SC
Abstract: No abstract text available
Text: JDV2S25SC 東芝可変容量ダイオード シリコンエピタキシャルプレーナ形 JDV2S25SC ○ UHF 帯無線 VCO 用 容量比が大きい。 : C1V/C4V = 2.9 標準 • 直列抵抗が小さい : rs = 0.47 Ω (標準) • 2 端子超小型外囲器なので､セットの小型化に適しています。
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JDV2S25SC
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JDV2S25SC
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Untitled
Abstract: No abstract text available
Text: JDV2S28SC TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S28SC VCO for UHF Band Radio High Capacitance Ratio : C1V/C3V = 2.17 typ. • A two-terminal ultra-small package supports high-density mounting and the downsizing of end products. Low Series Resistance : rs = 0.38 ohm (typ.)
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JDV2S28SC
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Untitled
Abstract: No abstract text available
Text: JDV2S29SC TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S29SC VCO for UHF Band Radio 0.32±0.03 Symbol Rating Unit Reverse voltage VR 10 V Junction temperature Tj 150 °C Tstg -55~150 °C Storage temperature range 0.025±0.015 0.19±0.02 １ Absolute Maximum Ratings Ta = 25°C
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JDV2S29SC
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Untitled
Abstract: No abstract text available
Text: DSR01S30SC TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type DSR01S30SC ○ High-Speed Switching Application 0.19±0.02 Unit: mm Absolute Maximum Ratings Ta = 25°C VR 30 V Average forward current IO 100 * mA Surge current (10ms) IFSM 2 A Junction temperature
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DSR01S30SC
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JDV2S29SC
Abstract: No abstract text available
Text: JDV2S29SC TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S29SC VCO for UHF Band Radio 0.19±0.02 High Capacitance Ratio : C1V/C4V = 2.8 typ. 0.32±0.03 Symbol Rating Unit Reverse voltage VR 10 V Junction temperature Tj 150 °C Tstg -55~150 °C Storage temperature range
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JDV2S29SC
JDV2S29SC
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JDV2S38SC
Abstract: No abstract text available
Text: JDV2S38SC 東芝可変容量ダイオード シリコンエピタキシャルプレーナ形 JDV2S38SC ○ UHF 帯無線 VCO 用 単位: mm • 容量比が大きい。 • 直列抵抗が小さい。 : rs = 0.48 Ω 標準 2 端子超小型外囲器な ので高密度実装が可能でありセットの
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JDV2S38SC
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JDV2S38SC
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