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    12 V 100W POWER AMP Search Results

    12 V 100W POWER AMP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation

    12 V 100W POWER AMP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TGF2819-FS 100W Peak Power, 20W Average Power, 32V, DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers


    Original     		PDF TGF2819-FS TGF2819-FS

    Untitled

    Abstract: No abstract text available
    Text: TGF2819-FL 100W Peak Power, 20W Average Power, 32V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers


    Original     		PDF TGF2819-FL TGF2819-FL

    MSCQ01

    Abstract: module rf amplifier 100w rf power amplifier 100w AMPLIFIER 2 MHZ 100W 150M 100W POWER AMPLIFIER RF power amplifier MHz
    Text: polyfet rf devices MSCQ01 Power RF Amplifiers Power = 100.0 Watts Bandwidth = 30 to 512 Mhz Gain = 8.0 dB Vdd = 26.0 Volts 50 ohms Input/Output Impedance Description The MSCQ01 is a 100 Watt, single stage amplifier module covering a bandwidth of 30-512 Mhz. This compact module design is


    Original     		PDF MSCQ01 MSCQ01 00YFET 24Vdc, 100KHz 24Vdc 30-512MHz, module rf amplifier 100w rf power amplifier 100w AMPLIFIER 2 MHZ 100W 150M 100W POWER AMPLIFIER RF power amplifier MHz

    RD100HHF1

    Abstract: TRANSISTOR D 1765 304 fet transistor TRANSISTOR D 1765 720 100w RD100HHF1 hf amplifier 100w hf power transistor mosfet mosfet HF amplifier 68 0154 rf amplifier 100w
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD100HHF1 Silicon MOSFET Power Transistor 30MHz,100W OUTLINE DRAWING DESCRIPTION 25.0+/-0.3 RD100HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications.


    Original     		PDF RD100HHF1 30MHz RD100HHF1 30MHz TRANSISTOR D 1765 304 fet transistor TRANSISTOR D 1765 720 100w RD100HHF1 hf amplifier 100w hf power transistor mosfet mosfet HF amplifier 68 0154 rf amplifier 100w

    GaN amplifier 100W

    Abstract: No abstract text available
    Text: TGA2813-CP 3.1 to 3.6 GHz, 100W GaN Power Amplifier Applications • Radar Product Features     Functional Block Diagram Frequency Range: 3.1 – 3.6 GHz Pout: 50 dBm at PIN = 27 dBm Power Gain: 23 dB (at PIN = 27 dBm) PAE: 51 % CW 1 2 3 4 5


    Original     		PDF TGA2813-CP TGA2813-CP TQGaN25 GaN amplifier 100W

    MGFC50G

    Abstract: No abstract text available
    Text: < C band internally matched power GaN HEMT > MGFC50G5867 5.8 – 6.7 GHz BAND / 100W OUTLINE DRAWING Unit : m illim eters FEATURES 24.0±0.3 • Amplifier for C-band SATCOM ② φ2.2 0.6±0.2 QUALITY 4.4+0/-0.3 2MIN ② 2.4 APPLICATION ① 8.0±0.2 17.4±0.2


    Original     		PDF MGFC50G5867 MGFC50G5867, CSTG-14855 MGFC50G

    Untitled

    Abstract: No abstract text available
    Text: THS6204 TH S6 204 TH S6 ® 20 4 www.ti.com . SBOS416B – OCTOBER 2007 – REVISED JULY 2008 Dual-Port, Differential VDSL2 Line Driver Amplifiers


    Original     		PDF THS6204 SBOS416B THS6204

    OPA2674

    Abstract: No abstract text available
    Text: OPA2673 OP A2 67 3 www.ti.com SBOS382F – JUNE 2008 – REVISED MAY 2010 Dual, Wideband, High Output Current Operational Amplifier with Active Off-Line Control Check for Samples: OPA2673 FEATURES DESCRIPTION • The OPA2673 provides the high output current and


    Original     		PDF OPA2673 SBOS382F 340MHz 600MHz 700mA 000V/ms 16mA/ch 800mA) OPA2673 OPA2674

    G993

    Abstract: 12v 100w amplifier QFN-24 THS6204 THS6204IPWP THS6204IRHFR THS6204IRHFT
    Text: THS6204 TH S6 204 TH S6 ® 20 4 www.ti.com . SBOS416C – OCTOBER 2007 – REVISED APRIL 2009 Dual-Port, Differential VDSL2 Line Driver Amplifiers


    Original     		PDF THS6204 SBOS416C 21mA/Port 17pA/Hz 89dBc G993 12v 100w amplifier QFN-24 THS6204 THS6204IPWP THS6204IRHFR THS6204IRHFT

    Untitled

    Abstract: No abstract text available
    Text: THS6204 TH S6 204 TH S6 ® 20 4 www.ti.com . SBOS416C – OCTOBER 2007 – REVISED APRIL 2009 Dual-Port, Differential VDSL2 Line Driver Amplifiers


    Original     		PDF THS6204 SBOS416C THS6204

    Untitled

    Abstract: No abstract text available
    Text: THS6204 TH S6 204 TH S6 ® 20 4 www.ti.com . SBOS416C – OCTOBER 2007 – REVISED APRIL 2009 Dual-Port, Differential VDSL2 Line Driver Amplifiers


    Original     		PDF THS6204 SBOS416C THS6204

    OPA2674

    Abstract: No abstract text available
    Text: OPA2673 OP A2 67 3 www.ti.com SBOS382F – JUNE 2008 – REVISED MAY 2010 Dual, Wideband, High Output Current Operational Amplifier with Active Off-Line Control Check for Samples: OPA2673 FEATURES DESCRIPTION • The OPA2673 provides the high output current and


    Original     		PDF OPA2673 SBOS382F OPA2673 16mA/ch 700mA 460mA OPA2674

    OPA2674

    Abstract: opp film incoming procedure OPA2673 OPA2677 OPA2691 OPA3691 OPA691 THS6042
    Text: OPA2673 OP A2 67 3 www.ti.com SBOS382D – JUNE 2008 – REVISED JANUARY 2010 Dual, Wideband, High Output Current Operational Amplifier with Active Off-Line Control Check for Samples: OPA2673 FEATURES DESCRIPTION • The OPA2673 provides the high output current and


    Original     		PDF OPA2673 SBOS382D OPA2673 16mA/ch 700mA 460mA OPA2674 opp film incoming procedure OPA2677 OPA2691 OPA3691 OPA691 THS6042

    OPA2674

    Abstract: No abstract text available
    Text: OPA2673 OP A2 67 3 www.ti.com SBOS382F – JUNE 2008 – REVISED MAY 2010 Dual, Wideband, High Output Current Operational Amplifier with Active Off-Line Control Check for Samples: OPA2673 FEATURES DESCRIPTION • The OPA2673 provides the high output current and


    Original     		PDF OPA2673 SBOS382F 340MHz 600MHz 700mA 000V/ms 16mA/ch 800mA) OPA2673 OPA2674

    Untitled

    Abstract: No abstract text available
    Text: THS6204 TH S6 204 TH S6 ® 20 4 www.ti.com . SBOS416B – OCTOBER 2007 – REVISED JULY 2008 Dual-Port, Differential VDSL2 Line Driver Amplifiers


    Original     		PDF THS6204 SBOS416B THS6204

    QFN-24

    Abstract: THS6204 THS6204IPWP THS6204IRHFR THS6204IRHFT G993
    Text: THS6204 TH S6 204 TH S6 ® 20 4 www.ti.com . SBOS416C – OCTOBER 2007 – REVISED APRIL 2009 Dual-Port, Differential VDSL2 Line Driver Amplifiers


    Original     		PDF THS6204 SBOS416C 21mA/Port 17pA/Hz 89dBc QFN-24 THS6204 THS6204IPWP THS6204IRHFR THS6204IRHFT G993

    pO115

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD100HHF1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,100W OUTLINE DRAWING DESCRIPTION RD100HHF1 is a MOS FET type transistor specifically 25.0+/-0.3 designed for HF High power amplifiers applications. 7.0+/-0.5 11.0+/-0.3


    Original     		PDF RD100HHF1 30MHz RD100HHF1 30MHz RD100HHF1-101 pO115

    Untitled

    Abstract: No abstract text available
    Text: THS6204 TH S6 204 TH S6 ® 20 4 www.ti.com . SBOS416C – OCTOBER 2007 – REVISED APRIL 2009 Dual-Port, Differential VDSL2 Line Driver Amplifiers


    Original     		PDF THS6204 SBOS416C THS6204

    1431T

    Abstract: BU106 BUX18 2n2102 replacement 2N3440 2N5416 REPLACEMENT 2N6306 2N6307 2N6308 2N6510 BUX17
    Text: HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES 1C t o 3 0 A . . •c pm k - 12 A lc = 10A Py = 75 • 100W Switching Linear 130 x 130 130 x 1 3 0 1 3 0 x 130 BU 106 2N 5840 [N -P -N ] 2N 5240 [N -P -N ] BU 106 2N 5838 Va o sus =l40V VCER(sus) = 275 V hFE = 2 0 m in .


    OCR Scan     		PDF lc-30A 130x130 180x180 210x210 bu106 2n5840 2n5240 2N6510 2N6308 2n5805 1431T BU106 BUX18 2n2102 replacement 2N3440 2N5416 REPLACEMENT 2N6306 2N6307 2N6308 2N6510 BUX17

    2N3440 2N5416 REPLACEMENT

    Abstract: TRANSISTOR REPLACEMENT FOR 2N3053 40620 transistor 2n6308 TRANSISTOR REPLACEMENT Replacement for 2N5322 transistor 2n2102 replacement 300W TRANSISTOR AUDIO AMPLIFIER 2N4036 replacement Transistor PJ 431 40872
    Text: HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES 1C t o 3 0 A . . •c pm k - 12 A lc = 10A Py = 75 • 100W Switching Linear 130 x 130 130 x 1 3 0 1 3 0 x 130 BU 106 2N 5840 [N -P -N ] 2N 5240 [N -P -N ] BU 106 2N 5838 Va o sus =l40V VCER(sus) = 275 V hFE = 2 0 m in .


    OCR Scan     		PDF lc-30A 130x130 180x180 210x210 bu106 2n5840 2n5240 2N6510 2N6308 2n5805 2N3440 2N5416 REPLACEMENT TRANSISTOR REPLACEMENT FOR 2N3053 40620 transistor 2n6308 TRANSISTOR REPLACEMENT Replacement for 2N5322 transistor 2n2102 replacement 300W TRANSISTOR AUDIO AMPLIFIER 2N4036 replacement Transistor PJ 431 40872

    2N6214

    Abstract: BU106 2N5239 2N5240 2N5805 2N5838 2N5840 2N6251 2N6308 2N6510
    Text: HIGH-VOLTAGE N-P-N & P-N-P POWER T Y PE S 1C t o 3 0 A . . •c pm k - 12 A lc = 10A Py = 7 5 • 100W Switching Linear 130 x 130 130 x 1 3 0 1 3 0 x 130 BU 106 2N 5840 [N -P -N ] 2N 5240 [N -P -N ] BU 106 2N 5838 Va o sus =l40V VCER(sus) = 275 V hFE = 2 0 m in .


    OCR Scan     		PDF lc-30A 130x130 180x180 210x210 BU106 2N5840 2N5240 2N6510 2N6308 2N5805 2N6214 BU106 2N5239 2N5240 2N5805 2N5838 2N5840 2N6251 2N6308 2N6510

    40362

    Abstract: 40410 40319 BU106 2N5239 2N5240 2N5805 2N5838 2N5840 2N6251
    Text: HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES 1C t o 3 0 A . . •c pm k - 12 A lc = 10A Py = 7 5 • 100W Switching Linear 130 x 130 130 x 1 3 0 1 3 0 x 130 BU 106 2N 5840 [N -P -N ] 2N 5240 [N -P -N ] BU 106 2N 5838 Va o sus =l40V VCER(sus) = 275 V hFE = 2 0 m in .


    OCR Scan     		PDF lc-30A 130x130 180x180 210x210 BU106 2N5840 2N5240 2N6510 2N6308 2N5805 40362 40410 40319 BU106 2N5239 2N5240 2N5805 2N5838 2N5840 2N6251

    1431T

    Abstract: BU106 2N6306 2N6307 2N6308 2N6510 BUX17 BUX17A BUX18 BUX18A
    Text: HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES 1C t o 3 0 A . . •c pm k - 12 A lc = 10A P y = 7 5 • 100W Switching Linear 130 x 130 130 x 1 3 0 1 3 0 x 130 BU 106 2N 5840 [N -P -N ] 2N 5240 [N -P -N ] BU 106 2N 5838 Va o sus =l40V VCER(sus) = 275 V hFE = 2 0 m in .


    OCR Scan     		PDF lc-30A 130x130 180x180 210x210 bu106 2n5840 2n5240 2N6510 2N6308 2n5805 1431T BU106 2N6306 2N6307 2N6308 2N6510 BUX17 BUX17A BUX18 BUX18A

    2N6179

    Abstract: POWER TRANSISTORS 10A 400v pnp BU106 2N3055 RCA 2N2102 BUX17 BUX18 RCA 2N3055 transistor transistor BDX 65 2N5240
    Text: HIGH-VOLTAGE N-P-N & P-N-P POWER T Y PE S 1C t o 3 0 A . . •c pm k - 12 A lc = 10A Py = 7 5 • 100W Switching Linear 130 x 130 130 x 1 3 0 1 3 0 x 130 BU 106 2N 5840 [N -P -N ] 2N 5240 [N -P -N ] BU 106 2N 5838 Va o sus =l40V VCER(sus) = 275 V hFE = 2 0 m in .


    OCR Scan     		PDF lc-30A 130x130 180x180 210x210 BU106 2N5840 2N5240 2N6510 2N6308 2N5805 2N6179 POWER TRANSISTORS 10A 400v pnp BU106 2N3055 RCA 2N2102 BUX17 BUX18 RCA 2N3055 transistor transistor BDX 65 2N5240