1200 - 1400 MHZ L-BAND APPLICATIONS Search Results

1200 - 1400 MHZ L-BAND APPLICATIONS Result Highlights (5)

Part	Manufacturer	Description
XPN12006NC	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 60 V, 20 A, 0.0120 Ω@10V, TSON Advance(WF)
TPN12008QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 26 A, 0.0123 Ohm@10V, TSON Advance
CLC425AJE	Rochester Electronics LLC	OP-AMP, 800uV OFFSET-MAX, 1900MHz BAND WIDTH, PDSO8, PLASTIC, SOIC-8
MAX4352EUK-T	Rochester Electronics LLC	OP-AMP, 12000uV OFFSET-MAX, 30MHz BAND WIDTH, PDSO5, MO-178AA, SOT-23, 5 PIN
CA3046	Rochester Electronics LLC	RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN

1200 - 1400 MHZ L-BAND APPLICATIONS Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
L-Band 1200-1400 MHz Abstract: diode gp 429 Radar x band radar HV400 Text: DESCRIPTION DESCRIPTION HVV1214-075 HVV1214-075 L-Band Radar Pulsed Power Transistor L-Band Radar Pulsed Power Transistor HVV1214-075 1200-1400 MHz, 200µs Pulse, 10% DutyDuty 1200-1400 MHz, 200µs Pulse, 10% The innovative Semiconductor Company! L-Band Radar Pulsed Power Transistor	Original	PDF	HVV1214-075 HVV1214-075MHz, HVV1214-075 429-HVVi EG-01-PO08X4 L-Band 1200-1400 MHz diode gp 429 Radar x band radar HV400
transistor s 1014 Abstract: L-Band 1200-1400 MHz Radar radar circuit component x band radar HV400 SM200 Text: HVV1214-025 HVV1214-025 L-BandRadar RadarPulsed PulsedPower PowerTransistor Transistor L-Band HVV1214-075 1200-1400 MHz,200!s 200!sPulse, Pulse,10% 10%Duty Duty HVV1214-025 The innovative Semiconductor Company! 1200-1400 MHz, L-Band Radar Pulsed Power Transistor	Original	PDF	HVV1214-025 HVV1214-075 HVV1214-025 EG-01-PO05X5 429-HVVi EG-01-PO05X1 transistor s 1014 L-Band 1200-1400 MHz Radar radar circuit component x band radar HV400 SM200
ALR006 Abstract: ASI10510 Text: ALR006 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ALR006 is Designed for 1200 – 1400 MHz, L-Band Applications. FEATURES: • Internal Input/Output Matching Network • PG = 9.5 dB at 6.0 W/ 1400 MHz • Omnigold Metalization System MAXIMUM RATINGS	Original	PDF	ALR006 ALR006 ASI10510 ASI10510
"RF Power Transistor" Abstract: 1200 - 1400 MHz L-Band Applications RZ1214B35Y Text: RZ1214B35Y NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2L FLG DESCRIPTION: The ASI RZ1214B35Y is Designed for 1200 – 1400 MHz, L-Band Applications. FEATURES: • Internal Input/Output Matching Network • PG = 7.0 dB at 35 W/ 1400 MHz • Omnigold Metalization System	Original	PDF	RZ1214B35Y RZ1214B35Y "RF Power Transistor" 1200 - 1400 MHz L-Band Applications
RZ1214B65Y Abstract: "RF Power Transistor" RF NPN POWER TRANSISTOR 2.5 GHZ Text: RZ1214B65Y NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2L FLG DESCRIPTION: The ASI RZ1214B65Y is Designed for 1200 – 1400 MHz, L-Band Applications. FEATURES: • Internal Input/Output Matching Network • PG = 7.0 dB at 80 W/1400 MHz • Omnigold Metalization System	Original	PDF	RZ1214B65Y RZ1214B65Y "RF Power Transistor" RF NPN POWER TRANSISTOR 2.5 GHZ
ALR100 Abstract: ASI10514 Text: ALR100 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2L FLG L DESCRIPTION: N J O A 1 B The ASI ALR100 is Designed for 1200 – 1400 MHz, L-Band Applications. D 2 3 M FEATURES: F • Internal Input/Output Matching Network • PG = 6.0 dB at 100 W/1400 MHz	Original	PDF	ALR100 ALR100 ASI10514 ASI10514
ALR100 Abstract: ASI10514 Text: ALR100 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2L FLG DESCRIPTION: L J N The ASI ALR100 is Designed for 1200 – 1400 MHz, L-Band Applications. O A B E K D FEATURES: C G • Internal Input/Output Matching Network • PG = 6.0 dB at 100 W/1400 MHz	Original	PDF	ALR100 ALR100 ASI10514 ASI10514
AM81214-060 Abstract: No abstract text available Text: AM81214-060 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2L FLG DESCRIPTION: The ASI AM81214-060 is Designed for 1200 – 1400 MHz, L-Band Applications. FEATURES: • Internal Input/Output Matching Network • PG = 6.6 dB at 55 W/1400 MHz • Omnigold Metalization System	Original	PDF	AM81214-060 AM81214-060
GROUND BASED RADAR Abstract: transistor SMD R1D Text: REV. A 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 818 982-1200 Specifications are subject to change without notice. WWW.ADSEMI.COM HVV1214-140 (Preliminary Datasheet) L-Band Pulsed Power Transistor 1200-1400 MHz, 200µs Pulse, 10% Duty Cycle ! For Ground Based Radar Applications	Original	PDF	HVV1214-140 21DD1E) GROUND BASED RADAR transistor SMD R1D
MIL-STD-750D Abstract: L-Band 1200-1400 MHz 8 HJC Radar F-1200 HVV1214-25 HVVi Semiconductors Text: HVV1214-025 L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200µs Pulse, 10% Duty DESCRIPTION PACKAGE The high power HVV1214-25 device is a high voltage silicon enhancement mode RF transistor designed for L-Band pulsed radar applications operating over the frequency range from	Original	PDF	HVV1214-025 HVV1214-25 MIL-STD-750D, MIL-STD-750D L-Band 1200-1400 MHz 8 HJC Radar F-1200 HVVi Semiconductors
ALR006 Abstract: ASI10510 transistor 306 x Text: ALR006 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .310 2L FLG DESCRIPTION: A 4x .062 x 45° The ASI ALR006 is Designed for 1200 – 1400 MHz, L-Band Applications. .040 x 45° C 2xB ØE D F G H FEATURES: I • Internal Input/Output Matching Network • PG = 9.5 dB at 6.0 W/ 1400 MHz	Original	PDF	ALR006 ALR006 ASI10510 transistor 306 x
ALR060 Abstract: ASI10513 Text: ALR060 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .310 2L FLG DESCRIPTION: A 4x .062 x 45° The ASI ALR060 is Designed for 1200 – 1400 MHz, L-Band Applications. .040 x 45° C 2xB ØE D F G H FEATURES: I • Internal Input/Output Matching Network • PG = 6.5 dB at 60 W/1400 MHz	Original	PDF	ALR060 ALR060 10CODE: ASI10513 ASI10513
ALR015 Abstract: ASI10511 Text: ALR015 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .310 2L FLG DESCRIPTION: A 4x .062 x 45° The ASI ALR015 is Designed for 1200 – 1400 MHz, L-Band Applications. .040 x 45° C 2xB ØE D F G H FEATURES: I • Internal Input/Output Matching Network • PG = 8.5 dB at 15 W/1400 MHz	Original	PDF	ALR015 ALR015 ASI10511
ALR060 Abstract: ASI10513 1402 Transistor Text: ALR060 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .310 2L FLG DESCRIPTION: A 4x .062 x 45° The ASI ALR060 is Designed for 1200 – 1400 MHz, L-Band Applications. .040 x 45° C 2xB ØE D F G H FEATURES: I • Internal Input/Output Matching Network • PG = 6.5 dB at 60 W/1400 MHz	Original	PDF	ALR060 ALR060 ASI10513 1402 Transistor

Untitled Abstract: No abstract text available Text: CGHV14500 500 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems Cree’s CGHV14500 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14500 ideal for 1.2 - 1.4 GHz L-Band radar	Original	PDF	CGHV14500 CGHV14500 CGHV14
Untitled Abstract: No abstract text available Text: CGHV14250 250 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems Cree’s CGHV14250 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14250 ideal for 1.2 - 1.4 GHz L-Band radar	Original	PDF	CGHV14250 CGHV14250 CGHV14
Untitled Abstract: No abstract text available Text: CGHV14500 500 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems Cree’s CGHV14500 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14500 ideal for 1.2 - 1.4 GHz L-Band radar	Original	PDF	CGHV14500 CGHV14500 CGHV14
Untitled Abstract: No abstract text available Text: CGHV14250 250 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems Cree’s CGHV14250 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14250 ideal for 1.2 - 1.4 GHz L-Band radar	Original	PDF	CGHV14250 CGHV14250 CGHV14 350anning,
Untitled Abstract: No abstract text available Text: CGHV14500 500 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems Cree’s CGHV14500 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14500 ideal for 1.2 - 1.4 GHz L-Band radar	Original	PDF	CGHV14500 CGHV14500 CGHV14
HVV1214-140 Abstract: L-Band 1200-1400 MHz SMD TRANSISTOR PD4 radar circuit ERJ8GEYJ100V L-band RF MOSFET 1030mhz "RF MOSFET CLASS AB Text: HVV1214-140 Preliminary Datasheet L-Band Pulsed Power Transistor 1200-1400 MHz, 200µs Pulse, 10% Duty Cycle For Ground Based Radar Applications The innovative Semiconductor Company! FEATURES Silicon MOSFET Technology Operation from 24V to 50V High Power Gain	Original	PDF	HVV1214-140 429-HVVi EG-01-PO22X1 HVV1214-140 L-Band 1200-1400 MHz SMD TRANSISTOR PD4 radar circuit ERJ8GEYJ100V L-band RF MOSFET 1030mhz "RF MOSFET CLASS AB
L-Band 1200-1400 MHz Abstract: 4884 MOSFET HVV1214-100 radar circuit L-band RF MOSFET SEMICONDUCTORS INC 1200-1400 429 transistor 4884+MOSFET Text: The innovative Semiconductor Company! HVV1214-100 High Voltage, High Ruggedness L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200 s Pulse, 10% Duty For Ground Based Radar Applications TM Features • Silicon MOSFET Technology • Operation from 24V to 50V	Original	PDF	HVV1214-100 EG-01-DS06A 429-HVVi L-Band 1200-1400 MHz 4884 MOSFET radar circuit L-band RF MOSFET SEMICONDUCTORS INC 1200-1400 429 transistor 4884+MOSFET
j152 Abstract: RF MOSFET CLASS AB L-Band 1200-1400 MHz 1030mhz HVV1214-100 5919CC-TB-7 Text: The innovative Semiconductor Company! HVV1214-100 HIGH VOLTAGE, HIGH RUGGEDNESS L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200 s Pulse, 10% Duty Cycle For Ground Based Radar Applications TM FEATURES • Silicon MOSFET Technology • Operation from 24V to 50V	Original	PDF	HVV1214-100 429-HVVi EG-01-DS06B j152 RF MOSFET CLASS AB L-Band 1200-1400 MHz 1030mhz 5919CC-TB-7
L-Band 1200-1400 MHz Abstract: ATC100B390 CR1206-8W ATC100B101 ATC100B910 Text: STAC1214-250 LDMOS L-band radar transistor Datasheet — preliminary data Features • Excellent thermal stability ■ Common source configuration push-pull ■ POUT = 250 W with 14 dB gain over 1200 1400 MHz ■ ST air cavity / STAC package Description	Original	PDF	STAC1214-250 STAC1214-250 STAC265B L-Band 1200-1400 MHz ATC100B390 CR1206-8W ATC100B101 ATC100B910
ATC100B390 Abstract: No abstract text available Text: STAC1214-250 LDMOS L-band radar transistor Datasheet - preliminary data Features • Excellent thermal stability • Common source configuration push-pull • POUT = 250 W with 14 dB gain over 1200 1400 MHz • ST air cavity / STAC package Description STAC265B	Original	PDF	STAC1214-250 STAC265B STAC1214-250 DocID022749 ATC100B390

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1200 - 1400 MHZ L-BAND APPLICATIONS Search Results

1200 - 1400 MHZ L-BAND APPLICATIONS Result Highlights (5)

1200 - 1400 MHZ L-BAND APPLICATIONS Datasheets Context Search

L-Band 1200-1400 MHz

transistor s 1014

ALR006

"RF Power Transistor"

RZ1214B65Y

ALR100

ALR100

AM81214-060

GROUND BASED RADAR

MIL-STD-750D

ALR006

ALR060

ALR015

ALR060

Untitled

Untitled

Untitled

Untitled

Untitled

HVV1214-140

L-Band 1200-1400 MHz

j152

L-Band 1200-1400 MHz

ATC100B390