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    1200 IGNITER Search Results

    1200 IGNITER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    XPN12006NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 20 A, 0.0120 Ω@10V, TSON Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPN12008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 26 A, 0.0123 Ohm@10V, TSON Advance Visit Toshiba Electronic Devices & Storage Corporation
    CS1200 Coilcraft Inc Current Sense Transformer, 35A, 1:200 Visit Coilcraft Inc Buy
    CS1200L Coilcraft Inc Current Sense Transformer, 35A, 1:200, ROHS COMPLIANT Visit Coilcraft Inc Buy
    HPH5-1200LD Coilcraft Inc General Purpose Inductor, 173uH, 25%, 1 Element, Ferrite-Core, SMD, ROHS COMPLIANT Visit Coilcraft Inc

    1200 IGNITER Datasheets Context Search

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    20N120P

    Abstract: IXFN20N120P
    Text: IXFN20N120P PolarTM Power MOSFET HiPerFETTM VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1200 V VGSS Continuous


    Original     		PDF IXFN20N120P 300ns OT-227 E153432 20N120P 04-03-08-B IXFN20N120P

    Untitled

    Abstract: No abstract text available
    Text: PolarTM Power MOSFET HiPerFETTM VDSS ID25 IXFR20N120P RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1200 V VGSS Continuous


    Original     		PDF IXFR20N120P 300ns ISOPLUS247 E153432 20N120P 04-03-08-B

    ISOPLUS247

    Abstract: IXFR16N120P 16N120P N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A
    Text: IXFR16N120P PolarTM Power MOSFET HiPerFETTM VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1200 V VGSS Continuous


    Original     		PDF IXFR16N120P ISOPLUS247 E153432 300ns 16N120P 4-03-08-A ISOPLUS247 IXFR16N120P N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A

    Untitled

    Abstract: No abstract text available
    Text: VDSS ID25 IXFR16N120P PolarTM Power MOSFET HiPerFETTM RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1200 V VGSS Continuous


    Original     		PDF IXFR16N120P 300ns ISOPLUS247 E153432 16N120P 4-03-08-A

    IXFR20N120P

    Abstract: ISOPLUS247
    Text: PolarTM Power MOSFET HiPerFETTM IXFR20N120P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1200 V VGSS Continuous


    Original     		PDF IXFR20N120P 300ns ISOPLUS247 E153432 20N120P 04-03-08-B IXFR20N120P ISOPLUS247

    Untitled

    Abstract: No abstract text available
    Text: PolarTM Power MOSFET HiPerFETTM IXFK20N120P IXFX20N120P VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode trr TO-264 (IXFK) Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 1200 1200 V V


    Original     		PDF IXFK20N120P IXFX20N120P 300ns O-264 20N120P 04-03-08-B

    IXFR26N120P

    Abstract: 26N120P ISOPLUS247 nf725
    Text: PolarTM Power MOSFET HiPerFETTM IXFR26N120P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1200 V VGSS Continuous


    Original     		PDF IXFR26N120P 300ns ISOPLUS247 E153432 26N120P 3-28-08-B IXFR26N120P ISOPLUS247 nf725

    20N120P

    Abstract: No abstract text available
    Text: VDSS ID25 IXFN20N120P PolarTM Power MOSFET HiPerFETTM RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1200 V VGSS Continuous


    Original     		PDF IXFN20N120P 300ns OT-227 E153432 20N120P 04-03-08-B

    2a245

    Abstract: IXTP1N120P IXTA1N120P
    Text: PolarTM Power MOSFET IXTA1N120P IXTP1N120P VDSS ID25 RDS on = 1200V = 1A ≤ 20Ω Ω N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1200


    Original     		PDF IXTA1N120P IXTP1N120P O-263 500mA 1N120P A-245) 4-01-08-A 2a245 IXTP1N120P IXTA1N120P

    OSRAM hmi 1200

    Abstract: schiederwerk EVG 12 sachtler netronic 575 BC-1200 schiederwerk EVG 12-12 Osram HMI schiederwerk SA-1200-i3 schiederwerk evg schiederwerk EVG-1200
    Text: Technical Information Metal Halide Lamp No. FO 4642 Edition: 11/04 - subject to change HMI 1200 W/S Supersedes: 02/03 Status: valid „ Product description The OSRAM HMI 1200 W/S is a double-ended metal halide lamp with daylight-like color temperature in compact design. The


    Original     		PDF AD-1550, sAD-1550; BC-1200; BC-1200 SA-1200-i3; 1200C; EB-1200; SG-1200; 123T01E. OSRAM hmi 1200 schiederwerk EVG 12 sachtler netronic 575 schiederwerk EVG 12-12 Osram HMI schiederwerk SA-1200-i3 schiederwerk evg schiederwerk EVG-1200

    HMI ballast* 575

    Abstract: sachtler netronic 575 schiederwerk EVG 12 Schiederwerk EVG 12-12 1200w ballast EVG 12 HMI 575 igniter transistor BC 575 bc 575 netronic
    Text: Technical Information Metal Halide Short Arc Lamp No. FO 5166 - subject to change without notice Edition: 02/2005 SharXS HTI 1200 W/D7/60 Supersedes: 11/2004 Status: valid „ Product description The OSRAM SharXS HTI 1200 W/D7/60 is a compact double-ended 'D'


    Original     		PDF /D7/60 /D7/60 200W/D7/60 AD-1550, sAD-1550; SA-1200-i3; BC-1200; BC-1200 1200C; HMI ballast* 575 sachtler netronic 575 schiederwerk EVG 12 Schiederwerk EVG 12-12 1200w ballast EVG 12 HMI 575 igniter transistor BC 575 bc 575 netronic

    IXTA06N120P

    Abstract: No abstract text available
    Text: PolarTM Power MOSFET VDSS ID25 IXTA06N120P IXTP06N120P RDS on N-Channel Enhancement Mode Avalanche Rated = 1200V = 0.6A Ω ≤ 34Ω TO-263 (IXTA) G Symbol Test Conditions VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1200 V VGSS Continuous


    Original     		PDF IXTA06N120P IXTP06N120P O-263 06N120P 04-02-08-B IXTA06N120P

    MITRONIC

    Abstract: hmi 1200 1200 igniter sachtler may christe zg 10 PE1K2 HMI 575 schiederwerk EVG 12 sachtler netronic 575 netronic
    Text: Technical Information Metal Halide Lamp No. FO 4761 Edition: 11/04 - subject to change HMI 1200 W/GS Supersedes: Edition 08/04 Status: valid „ Product description The OSRAM HMI 1200 W/GS is a double-ended metal halide lamp with shortened electrode gap in pinch seal technology. The


    Original     		PDF AD-1550, sAD-1550; SA-1200-i3; 1200C; PFPE12 EB-1200; SG-1200; 123T01E. MITRONIC hmi 1200 1200 igniter sachtler may christe zg 10 PE1K2 HMI 575 schiederwerk EVG 12 sachtler netronic 575 netronic

    EVG 12

    Abstract: HMI ballast* 575 BC-1200 schiederwerk EVG 12-12 Control Gear and Ignitors for Metal Halide Lamp HMI 575 igniter sachtler netronic 575 schiederwerk EVG 12 schiederwerk EVG-1200 hmi 1200
    Text: Technical Information Metal Halide Short Arc Lamp No. FO 5242 - subject to change without notice Edition: 02/2005 SharXS HTI 1200 W/D7/75 Supersedes: 11/2004 Status: valid „ Product description The OSRAM SharXS HTI 1200 W/D7/75 is a compact double-ended 'D'


    Original     		PDF /D7/75 /D7/75 200W/D7/75 AD-1550, sAD-1550; SA-1200-i3; BC-1200; BC-1200 1200C; EVG 12 HMI ballast* 575 schiederwerk EVG 12-12 Control Gear and Ignitors for Metal Halide Lamp HMI 575 igniter sachtler netronic 575 schiederwerk EVG 12 schiederwerk EVG-1200 hmi 1200

    IXTA06N120P

    Abstract: IXTP06N120P 06N120P ixtp06n120 06N120
    Text: IXTA06N120P IXTP06N120P PolarTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 1200V = 0.6A ≤ 34Ω Ω TO-263 (IXTA) G Symbol Test Conditions VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1200 V VGSS Continuous


    Original     		PDF IXTA06N120P IXTP06N120P O-263 06N120P 04-02-08-B IXTA06N120P IXTP06N120P 06N120P ixtp06n120 06N120

    HMI ballast

    Abstract: hansmann electronic ballast electronic ballast MITRONIC hansmann sachtler netronic 575 ballast hmi hmi 1200 hmi 1200 BALLAST HMI 575 igniter PE1K2
    Text: Technical Information No. FO 5280 Edition: 02/06 - Metal Halide Lamp subject to change without notice Supersedes: Edition 04/05 Status: valid HMI 1200 W/SEL Product description The OSRAM HMI 1200 W/SEL is a single ended metal halide lamp with outer jacket. Service life has been extended to 1,000


    Original     		PDF AD-1550, sAD-1550; SA-1200-i3; 1200C; PFPE12 EB-1200; SG-1200; 123T01E HMI ballast hansmann electronic ballast electronic ballast MITRONIC hansmann sachtler netronic 575 ballast hmi hmi 1200 hmi 1200 BALLAST HMI 575 igniter PE1K2

    SE 135

    Abstract: HMI 1200 SE 640032 bag turgi 1200 igniter bag turgi SE 15/7U OSRAM hmi 1200 ECG book PFPE12 Line 700-1200 igniter 1125
    Text: Technical Information No. FO 4317 Edition: 04/05 Metal Halide Short Arc Lamp - subject to change HTI 1200 W/SE Supersedes: Edition 02/02 Status: valid „ Product description The OSRAM HTI 1200 W/SE is a single-ended metal halide lamp without outer bulb. The OSRAM “eXtreme Seal” technology enables


    Original     		PDF 25rated 15/7U BC-1200; 1200-E; PFPE12 123T01E. SE 135 HMI 1200 SE 640032 bag turgi 1200 igniter bag turgi SE 15/7U OSRAM hmi 1200 ECG book PFPE12 Line 700-1200 igniter 1125

    xenon hid ballast

    Abstract: HMI igniter igniter 1200 igniter HMI 575 igniter HMI igniter 575 HMI ballast* 575 xenon arc lamp ignitor igniter hmi 575 xenon ballast
    Text: CS2800 SERIES HMI Igniter Modules FEATURES • • • • • Bi-polar High Voltage Output Models for 200 W, 575 W, and 1200 W HID lamps Light Weight Compact Size Made in USA HSR family excluding HSR 575/2 of lamps. Consult CSI for more information. TYPICAL APPLICATIONS


    Original     		PDF CS2800 xenon hid ballast HMI igniter igniter 1200 igniter HMI 575 igniter HMI igniter 575 HMI ballast* 575 xenon arc lamp ignitor igniter hmi 575 xenon ballast

    HMI 575 igniter

    Abstract: xenon lamp igniter xenon igniter HMI ballast HMI igniter HMI ballast* 575 xenon hid ballast igniter hmi 575 igniter igniter hmi
    Text: CS2800 SERIES HMI Igniter Modules FEATURES • • • • • Bi-polar High Voltage Output Models for 200 W, 575 W, and 1200 W HID lamps Light Weight Compact Size Made in USA HSR family excluding HSR 575/2 of lamps. Consult CSI for more information. TYPICAL APPLICATIONS


    Original     		PDF CS2800 HMI 575 igniter xenon lamp igniter xenon igniter HMI ballast HMI igniter HMI ballast* 575 xenon hid ballast igniter hmi 575 igniter igniter hmi

    2R4N120P

    Abstract: IXTA2R4N120P IXTH2R4N120P
    Text: Polar TM Power MOSFET IXTA2R4N120P IXTH2R4N120P IXTP2R4N120P VDSS ID25 = 1200V = 2.4A ≤ 7.5Ω Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G S (TAB) TO-220 (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200


    Original     		PDF IXTA2R4N120P IXTH2R4N120P IXTP2R4N120P O-263 O-220 2R4N120P 2-08-A IXTA2R4N120P IXTH2R4N120P

    26N120P

    Abstract: No abstract text available
    Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFR26N120P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXFR26N120P 300ns ISOPLUS247 E153432 26N120P 1-07-A

    IXFL30N120P

    Abstract: 1200v18a 30N120P
    Text: PolarTM Power MOSFET HiPerFETTM IXFL30N120P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1200V 18A Ω 380mΩ 300ns ISOPLUS i5-PakTM (HV) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200


    Original     		PDF IXFL30N120P 300ns 30N120P 4-01-08-C IXFL30N120P 1200v18a 30N120P

    Untitled

    Abstract: No abstract text available
    Text: Polar TM Power MOSFET IXTA2R4N120P IXTH2R4N120P IXTP2R4N120P VDSS ID25 = 1200V = 2.4A Ω ≤ 7.5Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G S (TAB) TO-220 (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200


    Original     		PDF IXTA2R4N120P IXTH2R4N120P IXTP2R4N120P O-263 O-220 2R4N120P 2-08-A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFR20N120P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXFR20N120P 300ns ISOPLUS247 E153432 20N120P 1-07-A