Untitled
Abstract: No abstract text available
Text: epitex Opto-Device & Custom LED Φ5 STEM TYPE NIR LED L1200 series Lead Pb Free Product – RoHS Compliant L1200-35 _ _ High Power InGaAsP NIR LED L1200-35 _ _ is an InGaAsP LED mounted on a metal stem and covered with epoxy resin or glass lens can. On forward bias it emits a spectral band of radiation, which peaks at 1200nm.
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L1200
L1200-35
1200nm.
L1200-35K00
L1200-35K42
L1200-35M00
L1200-35M32
L1200-35T52
AQ2140
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Untitled
Abstract: No abstract text available
Text: epitex Opto-Device & Custom LED L1200-35 _ _ f5 STEM TYPE NIR LED L1200 series High Power InGaAsP NIR LED L1200-35 _ _ is an InGaAsP LED mounted on a metal stem and covered with epoxy resin or glass lens can. On forward bias it emits a spectral band of radiation, which peaks at 1200nm.
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L1200-35
L1200
1200nm.
L1200-35K00
L1200-35K42
L1200-35M00
L1200-35M32
L1200-35T52
AQ2140
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Untitled
Abstract: No abstract text available
Text: epitex Opto-Device & Custom LED 5 MOLD LED LAMP L1200-03 Lead Pb Free Product – RoHS Compliant L1200-03 Infrared LED Lamp L1200-03 is an InGaAsP LED mounted on a lead frame with a clear epoxy lens. On forward bias, it emits a spectral band of radiation, which peaks at 1200nm.
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L1200-03
L1200-03
1200nm.
1200nm
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Untitled
Abstract: No abstract text available
Text: epitex Opto-Device & Custom LED L1200-35M32 Φ5 STEM TYPE NIR LED L1200-35M32 Stem type LED with high output power L1200-35M32 is an InGaAsP LED mounted on a TO-18 stem with a spherical glass lens being designed for high output power uses. On forward bias, it emits a spectral band of radiation, which peaks at 1200nm.
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L1200-35M32
L1200-35M32
1200nm.
1200nm
AQ2140
AQ2742
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Untitled
Abstract: No abstract text available
Text: Panel Mounted Panel Mounted TVS L and C Circuit Filters DLT2/-/TVS Ordering Information Case Dimensions Please state Part Number e.g. 5 V working device, part number would be DLT2/L/1200n/LP/5/TVS. Remember to include the working voltage in the Part Number.
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DLT2/L/1200n/LP/5/TVS.
DLT2/L/1200n/LP/2-/TVS
DLT2/C/1200n/LP/-/TVS
ODCSM40489/9/2006
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Untitled
Abstract: No abstract text available
Text: WIRE-WOUND CHIP INDUCTOR – CERAMIC / 1206 3216 1206HS Series (6.8 ~ 1200nH) Part Number 1206HS-6N8E_TS 1206HS-100E_TS 1206HS-120E_TS 1206HS-150E_TS 1206HS-180E_TS 1206HS-220E_TS 1206HS-240E_TS 1206HS-270E_TS 1206HS-330E_TS 1206HS-390E_TS 1206HS-470E_TS
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1206HS
1200nH)
1206HS-6N8E
1206HS-100E
1206HS-120E
1206HS-150E
1206HS-180E
1206HS-220E
1206HS-240E
1206HS-270E
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HFA105NH60
Abstract: IRFP250
Text: Previous Datasheet Index Next Data Sheet PD-2.444 HFA105NH60 TM HEXFRED Ultrafast, Soft Recovery Diode LUG TERMINAL ANODE Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters VR = 600V VF = 1.5V a d Qrr * = 1200nC
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HFA105NH60
1200nC
HFA105NH60
IRFP250
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SMC1200
Abstract: 1200nm smd A64
Text: epitex Opto-Device & Custom LED SMC1200 SMD TYPE LED SMC1200 Lead Pb Free Product – RoHS Compliant High Performance infrared SMD LED on ceramics SMC1200 consists of an InGaAsP LED mounted on the ceramics package and is sealed with silicone or epoxy resin. It emits a spectral band of radiation at 1200nm.
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SMC1200
SMC1200
1200nm.
1200nm
smd A64
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SMT1200-23
Abstract: 1200nm
Text: epitex Opto-Device & Custom LED SMT1200-23 SMD Type NIR LED SMT1200-23 Lead Pb Free Product – RoHS Compliant High Performance NIR TOP IR LED SMT1200-23 consists of an InGaAsP LED mounted on the lead frame as TOP LED package, and is sealed with epoxy resin. It emits a spectral band of radiation at 1200nm.
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SMT1200-23
SMT1200-23
1200nm.
1200nm
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Untitled
Abstract: No abstract text available
Text: epitex Opto-Device & Custom LED 5 MOLD LED LAMP L1200-05 Lead Pb Free Product – RoHS Compliant L1200-05 Infrared LED Lamp L1200-05 is an InGaAsP LED mounted on a lead frame with a clear epoxy lens. On forward bias, it emits a spectral band of radiation, which peaks at 1200nm.
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L1200-05
L1200-05
1200nm.
1200nm
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Untitled
Abstract: No abstract text available
Text: epitex Opto-Device & Custom LED SMT1200 SMD TYPE NIR LED SMT1200 High Performance NIR TOP IR LED SMT1200 consists of an InGaAsP LED mounted on the lead frame as TOP LED package, and is sealed with epoxy resin. It emits a spectral band of radiation at 1200nm.
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SMT1200
SMT1200
1200nm.
1200nm
AQ2140/2742
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Untitled
Abstract: No abstract text available
Text: High Power Infrared LED 1200 nm Lead(Pb)Free Product-RoHS Compliant L1200-06 Infrared LED Lamp L1200-06 is an InGaAsP LED mounted on a lead frame with a clear epoxy lens. On forward bias it emits a spectral band of radiation, which peaks at 1200nm. Features
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L1200-06
L1200-06
1200nm.
G8370-85.
J-6512.
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Untitled
Abstract: No abstract text available
Text: epitex Opto-Device & Custom LED L1200-35K32 Φ5 STEM TYPE NIR LED L1200-35K32 Stem type LED with high output power L1200-35K32 is an InGaAsP LED mounted on a TO-46 stem with a spherical glass lens being designed for high output power uses. On forward bias, it emits a spectral band of radiation, which peaks at 1200nm.
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L1200-35K32
L1200-35K32
1200nm.
1200nm
AQ2140
AQ2742
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Untitled
Abstract: No abstract text available
Text: epitex Opto-Device & Custom LED 3 MOLD LED LAMP L1200-33 Lead Pb Free Product – RoHS Compliant L1200-33 Infrared LED Lamp L1200-33 is an InGaAsP LED mounted on a lead frame with a clear epoxy lens. On forward bias, it emits a spectral band of radiation, which peaks at 1200nm.
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L1200-33
L1200-33
1200nm.
1200nm
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1200nm
Abstract: inGaAs L1200-35K32 L1200
Text: L1200-35K32 Stem type LED with high output power L1200-35K32 is an InGaAsP LED mounted on a TO-46 stem with a spherical glass lens being designed for high output power uses. On forward bias, it emits a spectral band of radiation, which peaks at 1200nm. ♦Absolute Maximum Ratings
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L1200-35K32
L1200-35K32
1200nm.
L1200-
1200nr
Ta-25
Ii-20mA
1200nm
inGaAs
L1200
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BTW69-200N
Abstract: scr 122 btw69200n 69200N LT 7237 SCR 1989
Text: 3ÜE D • 7^237 00314G2 b 'T-zs-n SCS-THOMSON IMiOraOiDOi BTW69-200N -> 1200N s G S-THOMSON THYRISTORS ■ ■ ■ ■ ■ GLASS PASSIVATED CHIP HIGH STABILITY AND RELIABILITY HIGH SURGE CAPABILITY HIGH ON-STATE CURRENT EASY MOUNTING ON HEATSINK DESCRIPTION
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00314G2
BTW69-200N
1200N
BTW69BTW
scr 122
btw69200n
69200N
LT 7237
SCR 1989
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Untitled
Abstract: No abstract text available
Text: y PD-2.468 International [tor]Rectifier HFA90NH40 Ultrafast, Soft Recovery Diode HEXFRED LUG TERMINAL ANODE Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters V r = 400V 1 ▼ T VF = 1.3V Qrr* = 1200nC
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HFA90NH40
1200nC
60A/ps
Liguria49
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2732A INTEL
Abstract: 2732A eprom 2732A 2732A eprom eprom 2732A intel 2732A-3 2732A-2 INTEL IC 2732a intel 2732a 2732 memory chip
Text: in M 2732A 32K 4K X 8 UV ERASABLE PROM i Pin Compatible to 2764 EPROM 1200ns (2732A-2) Maximum Access Time . . . HMOS*-E Technology i Industry Standard P in o u t. . . JEDEC Approved >Compatible to High Speed 8m Hz 8086-2 MPU . . .Zero WAIT State Low Standby C urrent. . . 35 mA Max.
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1200ns
732A-2)
450ns
250ns
200ns.
2732As.
2732As
2732A INTEL
2732A
eprom 2732A
2732A eprom
eprom 2732A intel
2732A-3
2732A-2 INTEL
IC 2732a
intel 2732a
2732 memory chip
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EUPEC t 1209
Abstract: T1200 450C T1209 EUPEC TT 60 f
Text: eupec S5E ]> T 1200N T1209N lypenrelhe/iype range T 1200 N /T 1209 N Elektrische Eigenschaften Electrical properties 34035^7 1200 Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Effektiver DurchlaBstrom Dauergrenzstrom Maximum permissible values
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T1200
T1209
N/T1209
17/Detail
EUPEC t 1209
450C
EUPEC TT 60 f
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DSAGER00042
Abstract: No abstract text available
Text: ffiUNITRR G EM ! UL 1200N TJL 1200K jest ukladeffl wznaonlaoza posiada jqoym: - detektor koinoydenoyjny o malyoh znieksztaloenlach, - uklad sterowania wska£nikieoo poziomu sygnatu wej^oio- Uklad wzmacniacza p.oe. wego, - uklad wyciszania pray malym sygn&le wejgciowym*
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1200N
1200K
Warto36
Uj-100
n12-i
Oj-100
DSAGER00042
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Untitled
Abstract: No abstract text available
Text: 9EfrS0irS ‘on öNi Mv a a NO TE NUMBER OF CONTACT BX#12 : 6X#16 #1200NTACT 250VAC #16C0NTA0T 1OOVAC #12 23A MAX. per CONTACT #16 13A MAX. per CONTACT RATED VOLTAGE RATED CURRENT DIELECTRIC WITHSTANDING VOLTAGE : 2000VAC INSULATION RESISTANCE : 1OOOMQ MIN. (AT 500VDC)
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1200NTACT
250VAC
16C0NTA0T
2000VAC
500VDC)
12C0NTACT
16C0NTACT
9X104
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WEGO
Abstract: 1200N ARW 4 T12-1 1200et Uj-100
Text: U N 1TR FI .C E M I UL 1200N UL 1200K j e s t ukladan w znaonlaoza posiadajqoym : - d e te k to r koinoydenoyjny o malyoh z n ie k sz ta io e n ia c h , - uklad stero w an ia wska£nikiem poziomu sygnsdu w e j^ o io wego, * uklad w yoiszania pray malym sygnale wej^clowym,
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1200ET
1200N
T12-1,
Uj-100
WEGO
1200N
ARW 4
T12-1
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Untitled
Abstract: No abstract text available
Text: International {^Rectifier P D -2.444 HFA105NH60 Ultrafast, Soft Recovèry Diode HEXFRED" LUG TERMINAL ANODE Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters V R = 600V ? ▼ T V F = 1.5V Qrr* = 1200nC
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HFA105NH60
1200nC
40A/ps
Liguria49
S54S2
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Untitled
Abstract: No abstract text available
Text: International [îô^Rectifier HFA105NH60R H EXFRED " Ultrafast, Soft Recovery Diode PD-2.443 LUG TERMINAL CATHODE Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters V r = 600V V f = 1.5V i T i Qrr* = 1200nC
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HFA105NH60R
1200nC
40A/ps
Liguria49
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