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    1200V 10A Search Results

    1200V 10A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CS60-010S Coilcraft Inc Current Sense Transformer, 10A Visit Coilcraft Inc Buy
    CS60-010L Coilcraft Inc Current Sense Transformer, 10A, ROHS COMPLIANT Visit Coilcraft Inc
    CS1050 Coilcraft Inc Current Sense Transformer, 10A, 1:50 Visit Coilcraft Inc Buy
    D1869 Coilcraft Inc Current Sense Transformer, 10A, 1:50, Visit Coilcraft Inc Buy
    CS4050V-01L Coilcraft Inc Current Sense Transformer, 10A, ROHS COMPLIANT Visit Coilcraft Inc
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    1200V 10A Price and Stock

    Bourns Inc BSDH10G120E2

    SiC Schottky Diodes 1200V 10A High Surge SiC diode in TO220-2
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI BSDH10G120E2 Tube 50 50
    • 1 -
    • 10 -
    • 100 $2.49
    • 1000 $2.49
    • 10000 $2.38
    Buy Now

    Bourns Inc BSDW20G120C2

    SiC Schottky Diodes 1200V each 10A High Surge Dual SiC diode in TO247-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI BSDW20G120C2 Tube 50 50
    • 1 -
    • 10 -
    • 100 $4.81
    • 1000 $4.81
    • 10000 $4.81
    Buy Now

    1200V 10A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: XTRM Series XTR1K1210 HIGH-TEMPERATURE 10A, 1200V SIC SCHOTTKY DIODE FEATURES DESCRIPTION ▲ Reverse voltage up to 1200V. ▲ Operational beyond the -60°C to +230°C temperature range. ▲ Positive temperature coefficient for safe operation and ease paralleling.


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    PDF XTR1K1210 XTR1K1210 DS-00275-12

    Untitled

    Abstract: No abstract text available
    Text: 1 2 TO -24 7 1 - Cathode 2 - Anode Back of Case - Cathode D3PAK APT10SC120B 1200V 10A APT10SC120S 1200V 10A 1 2 2 1 SILICON CARBIDE SCHOTTKY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • PFC And Forward Topologies • Schottky Barrier


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    PDF APT10SC120B APT10SC120S O-247

    APT2X10SC120J

    Abstract: No abstract text available
    Text: 2 3 2 2 3 3 1 1 4 1 4 4 Anti-Parallel Parallel APT2X10SC120J APT2X11SC120J 27 2 T- SO APT2X11SC120J APT2X10SC120J 1200V 1200V 10A 10A SILICON CARBIDE SCHOTTKY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • PFC And Forward Topologies


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    PDF APT2X10SC120J APT2X11SC120J APT2X11SC120J OT-227 APT2X10SC120J

    Q67050-A4110

    Abstract: SIDC08D120H6
    Text: Preliminary SIDC08D120H6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC08D120H6 1200V IF 10A A This chip is used for:


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    PDF SIDC08D120H6 Q67050-A4110 4352S, Q67050-A4110 SIDC08D120H6

    Q67050-A4110

    Abstract: SIDC08D120H6
    Text: Preliminary SIDC08D120H6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC08D120H6 1200V IF 10A A This chip is used for:


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    PDF SIDC08D120H6 Q67050-A4110 4352S, Q67050-A4110 SIDC08D120H6

    Untitled

    Abstract: No abstract text available
    Text: Preliminary SIDC08D120H6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC08D120H6 1200V IF 10A A This chip is used for:


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    PDF SIDC08D120H6 Q67050-A4110 4352S,

    Q67050-A4110

    Abstract: SIDC08D120H6
    Text: Preliminary SIDC08D120H6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC08D120H6 1200V IF 10A A This chip is used for:


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    PDF SIDC08D120H6 Q67050-A4110 4352S, Q67050-A4110 SIDC08D120H6

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information GenX3TM 1200V IGBT VCES = IC25 = VCE sat ≤ tfi(typ) = IXGA24N120C3 IXGH24N120C3 IXGP24N120C3 High speed PT IGBTs for 10-50kHz Switching 1200V 48A 4.2V 110ns TO-263 (IXGA) Symbol Test Conditions Maximum Ratings VCES VCGR


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    PDF IXGA24N120C3 IXGH24N120C3 IXGP24N120C3 10-50kHz 110ns O-263 IC100 24N120C3 01-15-08-C

    600v 30a IGBT

    Abstract: FGH30N120FTD FGH30N120FTDTU IGBT 1200V 60A IGBT 200A 1200V application induction heating IGBT 60A 1200V HIGH VOLTAGE DIODE for microwave ovens igbt 600V 30A datasheet I36 MARKING igbt for HIGH POWER induction heating
    Text: FGH30N120FTD tm 1200V, 30A Trench IGBT Features General Description • Field stop trench technology Using advanced field stop trench technology, Fairchild’s 1200V trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche


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    PDF FGH30N120FTD 1200ut FGH30N120FTD 600v 30a IGBT FGH30N120FTDTU IGBT 1200V 60A IGBT 200A 1200V application induction heating IGBT 60A 1200V HIGH VOLTAGE DIODE for microwave ovens igbt 600V 30A datasheet I36 MARKING igbt for HIGH POWER induction heating

    FGA30N120

    Abstract: fgh30n120 FGA30N120FTD FGA30N120FTDTU FGH30N120FTD HIGH VOLTAGE DIODE for microwave ovens IGBT 1200V 60A 600v 30a IGBT FGH30N120FT igbt 600V 30A
    Text: FGA30N120FTD tm 1200V, 30A Trench IGBT Features General Description • Field stop trench technology Using advanced field stop trench technology, Fairchild’s 1200V trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche


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    PDF FGA30N120FTD FGA30N120FTD FGA30N120 fgh30n120 FGA30N120FTDTU FGH30N120FTD HIGH VOLTAGE DIODE for microwave ovens IGBT 1200V 60A 600v 30a IGBT FGH30N120FT igbt 600V 30A

    IXGH24N120C3

    Abstract: ixga24N120 IC100 24N120C3 IXGP24N120C3 24N120
    Text: Preliminary Technical Information VCES = IC25 = VCE sat ≤ tfi(typ) = IXGA24N120C3 IXGH24N120C3 IXGP24N120C3 GenX3TM 1200V IGBT High speed PT IGBTs for 10-50kHz Switching 1200V 48A 4.2V 110ns TO-263 (IXGA) Symbol Test Conditions Maximum Ratings VCES VCGR


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    PDF IXGA24N120C3 IXGH24N120C3 IXGP24N120C3 10-50kHz 110ns O-263 IC100 24N120C3 01-15-08-C IXGH24N120C3 ixga24N120 IC100 IXGP24N120C3 24N120

    inverter welding machine

    Abstract: FAIRCHILD Igbts FGH25N120FTDS fgh25n120 IGBT Transistor 1200V, 25A
    Text: FGH25N120FTDS tm 1200V, 25A Field Stop Trench IGBT Features General Description • High speed switching Using advanced field stop trench technology, Fairchild’s 1200V trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche


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    PDF FGH25N120FTDS FGH25N120FTDS inverter welding machine FAIRCHILD Igbts fgh25n120 IGBT Transistor 1200V, 25A

    Untitled

    Abstract: No abstract text available
    Text: FGA30N120FTD tm 1200V, 30A Trench IGBT Features General Description • Field stop trench technology • High speed switching • Low saturation voltage: VCE sat = 1.6V @ IC = 30A • High input impedance Using advanced field stop trench technology, Fairchild’s 1200V


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    PDF FGA30N120FTD FGA30N120FTD

    Untitled

    Abstract: No abstract text available
    Text: FGH30N120FTD tm 1200V, 30A Trench IGBT Features General Description • Field stop trench technology • High speed switching • Low saturation voltage: VCE sat = 1.6V @ IC = 30A • High input impedance Using advanced field stop trench technology, Fairchild’s 1200V


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    PDF FGH30N120FTD FGH30N120FTD

    GB05XP120K

    Abstract: ntc 0833 igbt 50v 3a w306
    Text: Bulletin I27168 Rev.E 10/03 GB05XP120K Three Phase Inverter Module in MTP Package 1200V NPT IGBT & Hexfredtm Diodes Features • Gen. 5 NPT 1200V IGBT Technology • HEXFRED TM Diode with UltraSoft Reverse Recovery • Very Low Conduction and Switching Losses


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    PDF I27168 GB05XP120K 12-Mar-07 GB05XP120K ntc 0833 igbt 50v 3a w306

    Untitled

    Abstract: No abstract text available
    Text: FGH25N120FTDS tm 1200V, 25A Field Stop Trench IGBT Features General Description • High speed switching • Low saturation voltage: VCE sat = 1.60V @ IC = 25A • High input impedance • RoHS compliant Using advanced field stop trench technology, Fairchild’s 1200V


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    PDF FGH25N120FTDS FGH25N120FTDS

    SIGC16T120CL

    Abstract: No abstract text available
    Text: Preliminary SIGC16T120CL IGBT Chip in NPT-technology C FEATURES: • 1200V NPT technology • 180µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE SIGC16T120CL 1200V This chip is used for: • chip only


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    PDF SIGC16T120CL Q67041-A4703A003 7131-P, SIGC16T120CL

    Untitled

    Abstract: No abstract text available
    Text: Bulletin I27169 Rev.D 10/03 GB15XP120K Three Phase Inverter Module in MTP Package 1200V NPT IGBT & Hexfredtm Diodes Features • Gen. 5 NPT 1200V IGBT Technology • HEXFRED TM Diode with UltraSoft Reverse Recovery • Very Low Conduction and Switching Losses


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    PDF I27169 GB15XP120K 12-Mar-07

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information 1200V XPTTM GenX3TM IGBT w/ Diode VCES IC110 VCE sat tfi(typ) IXYJ20N120C3D1 (Electrically Isolated Tab) = = ≤ = 1200V 7A 4.0V 108ns High-Speed IGBT for 20-50 kHz Switching ISO TO-247TM E153432 Symbol Test Conditions Maximum Ratings


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    PDF IC110 IXYJ20N120C3D1 108ns O-247TM E153432 IF110

    SCR 200A 500V

    Abstract: 50A 1200V SCR CYNA25
    Text: POWER COMPONENTS • Motor Control > Suitable for General Purpose AC Switching > IGT 25 mA Max. • Overvoltage Crowbar Protection > VDRM/VRMM 400, 600, 800, 1200V Applications • Voltage Regulation CYNA/CYNB16 • Welding Equipment 16Amp - 400/600/800/1200V - SCR


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    PDF CYNA/CYNB16 16Amp 400/600/800/1200V O-220AB O-220AB 180A2s CrydomCYN16 F1704 SCR 200A 500V 50A 1200V SCR CYNA25

    SIGC16T120CL

    Abstract: No abstract text available
    Text: SIGC16T120CL IGBT Chip in NPT-technology C FEATURES: • 1200V NPT technology • 180µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE SIGC16T120CL 1200V This chip is used for: • chip only G Applications:


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    PDF SIGC16T120CL Q67041-A4703A003 7131-P, SIGC16T120CL

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information 1200V XPTTM GenX3TM IGBTs VCES IC110 VCE sat tfi(typ) IXYP20N120C3 IXYH20N120C3 High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 20A 4.0V 108ns TO-220 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C


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    PDF IC110 IXYP20N120C3 IXYH20N120C3 108ns O-220 20N120C3

    Untitled

    Abstract: No abstract text available
    Text: FGA25N120FTD tm 1200V, 25A Trench IGBT Features • Field stop trench technology • High speed switching • Low saturation voltage: VCE sat =1.6V @ IC = 25A • High input impedance • RoHS complaint General Description Using advanced field stop trench technology, Fairchild’s 1200V


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    PDF FGA25N120FTD FGA25N120FTD

    fga20s120m

    Abstract: 600v 20a IGBT 1200v 20a IGBT DIODE GE 20a igbt 20A 1200v 12v igbt 20a
    Text: FGA20S120M tm 1200V, 20A ShortedAnodeTM IGBT Features General Description • High speed switching Using advanced Field Stop Trench and ShortedAnode technology, Fairchild’s 1200V ShortedAnodeTM Trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche capability. This


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    PDF FGA20S120M fga20s120m 600v 20a IGBT 1200v 20a IGBT DIODE GE 20a igbt 20A 1200v 12v igbt 20a