Untitled
Abstract: No abstract text available
Text: XTRM Series XTR1K1210 HIGH-TEMPERATURE 10A, 1200V SIC SCHOTTKY DIODE FEATURES DESCRIPTION ▲ Reverse voltage up to 1200V. ▲ Operational beyond the -60°C to +230°C temperature range. ▲ Positive temperature coefficient for safe operation and ease paralleling.
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XTR1K1210
XTR1K1210
DS-00275-12
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Untitled
Abstract: No abstract text available
Text: 1 2 TO -24 7 1 - Cathode 2 - Anode Back of Case - Cathode D3PAK APT10SC120B 1200V 10A APT10SC120S 1200V 10A 1 2 2 1 SILICON CARBIDE SCHOTTKY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • PFC And Forward Topologies • Schottky Barrier
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APT10SC120B
APT10SC120S
O-247
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APT2X10SC120J
Abstract: No abstract text available
Text: 2 3 2 2 3 3 1 1 4 1 4 4 Anti-Parallel Parallel APT2X10SC120J APT2X11SC120J 27 2 T- SO APT2X11SC120J APT2X10SC120J 1200V 1200V 10A 10A SILICON CARBIDE SCHOTTKY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • PFC And Forward Topologies
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APT2X10SC120J
APT2X11SC120J
APT2X11SC120J
OT-227
APT2X10SC120J
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Q67050-A4110
Abstract: SIDC08D120H6
Text: Preliminary SIDC08D120H6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC08D120H6 1200V IF 10A A This chip is used for:
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SIDC08D120H6
Q67050-A4110
4352S,
Q67050-A4110
SIDC08D120H6
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Q67050-A4110
Abstract: SIDC08D120H6
Text: Preliminary SIDC08D120H6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC08D120H6 1200V IF 10A A This chip is used for:
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SIDC08D120H6
Q67050-A4110
4352S,
Q67050-A4110
SIDC08D120H6
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Untitled
Abstract: No abstract text available
Text: Preliminary SIDC08D120H6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC08D120H6 1200V IF 10A A This chip is used for:
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SIDC08D120H6
Q67050-A4110
4352S,
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Q67050-A4110
Abstract: SIDC08D120H6
Text: Preliminary SIDC08D120H6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC08D120H6 1200V IF 10A A This chip is used for:
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SIDC08D120H6
Q67050-A4110
4352S,
Q67050-A4110
SIDC08D120H6
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information GenX3TM 1200V IGBT VCES = IC25 = VCE sat ≤ tfi(typ) = IXGA24N120C3 IXGH24N120C3 IXGP24N120C3 High speed PT IGBTs for 10-50kHz Switching 1200V 48A 4.2V 110ns TO-263 (IXGA) Symbol Test Conditions Maximum Ratings VCES VCGR
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IXGA24N120C3
IXGH24N120C3
IXGP24N120C3
10-50kHz
110ns
O-263
IC100
24N120C3
01-15-08-C
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600v 30a IGBT
Abstract: FGH30N120FTD FGH30N120FTDTU IGBT 1200V 60A IGBT 200A 1200V application induction heating IGBT 60A 1200V HIGH VOLTAGE DIODE for microwave ovens igbt 600V 30A datasheet I36 MARKING igbt for HIGH POWER induction heating
Text: FGH30N120FTD tm 1200V, 30A Trench IGBT Features General Description • Field stop trench technology Using advanced field stop trench technology, Fairchild’s 1200V trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche
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FGH30N120FTD
1200ut
FGH30N120FTD
600v 30a IGBT
FGH30N120FTDTU
IGBT 1200V 60A
IGBT 200A 1200V application induction heating
IGBT 60A 1200V
HIGH VOLTAGE DIODE for microwave ovens
igbt 600V 30A datasheet
I36 MARKING
igbt for HIGH POWER induction heating
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FGA30N120
Abstract: fgh30n120 FGA30N120FTD FGA30N120FTDTU FGH30N120FTD HIGH VOLTAGE DIODE for microwave ovens IGBT 1200V 60A 600v 30a IGBT FGH30N120FT igbt 600V 30A
Text: FGA30N120FTD tm 1200V, 30A Trench IGBT Features General Description • Field stop trench technology Using advanced field stop trench technology, Fairchild’s 1200V trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche
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FGA30N120FTD
FGA30N120FTD
FGA30N120
fgh30n120
FGA30N120FTDTU
FGH30N120FTD
HIGH VOLTAGE DIODE for microwave ovens
IGBT 1200V 60A
600v 30a IGBT
FGH30N120FT
igbt 600V 30A
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IXGH24N120C3
Abstract: ixga24N120 IC100 24N120C3 IXGP24N120C3 24N120
Text: Preliminary Technical Information VCES = IC25 = VCE sat ≤ tfi(typ) = IXGA24N120C3 IXGH24N120C3 IXGP24N120C3 GenX3TM 1200V IGBT High speed PT IGBTs for 10-50kHz Switching 1200V 48A 4.2V 110ns TO-263 (IXGA) Symbol Test Conditions Maximum Ratings VCES VCGR
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IXGA24N120C3
IXGH24N120C3
IXGP24N120C3
10-50kHz
110ns
O-263
IC100
24N120C3
01-15-08-C
IXGH24N120C3
ixga24N120
IC100
IXGP24N120C3
24N120
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inverter welding machine
Abstract: FAIRCHILD Igbts FGH25N120FTDS fgh25n120 IGBT Transistor 1200V, 25A
Text: FGH25N120FTDS tm 1200V, 25A Field Stop Trench IGBT Features General Description • High speed switching Using advanced field stop trench technology, Fairchild’s 1200V trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche
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FGH25N120FTDS
FGH25N120FTDS
inverter welding machine
FAIRCHILD Igbts
fgh25n120
IGBT Transistor 1200V, 25A
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Untitled
Abstract: No abstract text available
Text: FGA30N120FTD tm 1200V, 30A Trench IGBT Features General Description • Field stop trench technology • High speed switching • Low saturation voltage: VCE sat = 1.6V @ IC = 30A • High input impedance Using advanced field stop trench technology, Fairchild’s 1200V
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FGA30N120FTD
FGA30N120FTD
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Untitled
Abstract: No abstract text available
Text: FGH30N120FTD tm 1200V, 30A Trench IGBT Features General Description • Field stop trench technology • High speed switching • Low saturation voltage: VCE sat = 1.6V @ IC = 30A • High input impedance Using advanced field stop trench technology, Fairchild’s 1200V
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FGH30N120FTD
FGH30N120FTD
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GB05XP120K
Abstract: ntc 0833 igbt 50v 3a w306
Text: Bulletin I27168 Rev.E 10/03 GB05XP120K Three Phase Inverter Module in MTP Package 1200V NPT IGBT & Hexfredtm Diodes Features Gen. 5 NPT 1200V IGBT Technology HEXFRED TM Diode with UltraSoft Reverse Recovery Very Low Conduction and Switching Losses
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I27168
GB05XP120K
12-Mar-07
GB05XP120K
ntc 0833
igbt 50v 3a
w306
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Untitled
Abstract: No abstract text available
Text: FGH25N120FTDS tm 1200V, 25A Field Stop Trench IGBT Features General Description • High speed switching • Low saturation voltage: VCE sat = 1.60V @ IC = 25A • High input impedance • RoHS compliant Using advanced field stop trench technology, Fairchild’s 1200V
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FGH25N120FTDS
FGH25N120FTDS
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SIGC16T120CL
Abstract: No abstract text available
Text: Preliminary SIGC16T120CL IGBT Chip in NPT-technology C FEATURES: • 1200V NPT technology • 180µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE SIGC16T120CL 1200V This chip is used for: • chip only
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SIGC16T120CL
Q67041-A4703A003
7131-P,
SIGC16T120CL
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Untitled
Abstract: No abstract text available
Text: Bulletin I27169 Rev.D 10/03 GB15XP120K Three Phase Inverter Module in MTP Package 1200V NPT IGBT & Hexfredtm Diodes Features Gen. 5 NPT 1200V IGBT Technology HEXFRED TM Diode with UltraSoft Reverse Recovery Very Low Conduction and Switching Losses
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I27169
GB15XP120K
12-Mar-07
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information 1200V XPTTM GenX3TM IGBT w/ Diode VCES IC110 VCE sat tfi(typ) IXYJ20N120C3D1 (Electrically Isolated Tab) = = ≤ = 1200V 7A 4.0V 108ns High-Speed IGBT for 20-50 kHz Switching ISO TO-247TM E153432 Symbol Test Conditions Maximum Ratings
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IC110
IXYJ20N120C3D1
108ns
O-247TM
E153432
IF110
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SCR 200A 500V
Abstract: 50A 1200V SCR CYNA25
Text: POWER COMPONENTS • Motor Control > Suitable for General Purpose AC Switching > IGT 25 mA Max. • Overvoltage Crowbar Protection > VDRM/VRMM 400, 600, 800, 1200V Applications • Voltage Regulation CYNA/CYNB16 • Welding Equipment 16Amp - 400/600/800/1200V - SCR
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CYNA/CYNB16
16Amp
400/600/800/1200V
O-220AB
O-220AB
180A2s
CrydomCYN16
F1704
SCR 200A 500V
50A 1200V SCR
CYNA25
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SIGC16T120CL
Abstract: No abstract text available
Text: SIGC16T120CL IGBT Chip in NPT-technology C FEATURES: • 1200V NPT technology • 180µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE SIGC16T120CL 1200V This chip is used for: • chip only G Applications:
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SIGC16T120CL
Q67041-A4703A003
7131-P,
SIGC16T120CL
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information 1200V XPTTM GenX3TM IGBTs VCES IC110 VCE sat tfi(typ) IXYP20N120C3 IXYH20N120C3 High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 20A 4.0V 108ns TO-220 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C
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IC110
IXYP20N120C3
IXYH20N120C3
108ns
O-220
20N120C3
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Untitled
Abstract: No abstract text available
Text: FGA25N120FTD tm 1200V, 25A Trench IGBT Features • Field stop trench technology • High speed switching • Low saturation voltage: VCE sat =1.6V @ IC = 25A • High input impedance • RoHS complaint General Description Using advanced field stop trench technology, Fairchild’s 1200V
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FGA25N120FTD
FGA25N120FTD
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fga20s120m
Abstract: 600v 20a IGBT 1200v 20a IGBT DIODE GE 20a igbt 20A 1200v 12v igbt 20a
Text: FGA20S120M tm 1200V, 20A ShortedAnodeTM IGBT Features General Description • High speed switching Using advanced Field Stop Trench and ShortedAnode technology, Fairchild’s 1200V ShortedAnodeTM Trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche capability. This
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FGA20S120M
fga20s120m
600v 20a IGBT
1200v 20a IGBT
DIODE GE 20a
igbt 20A 1200v
12v igbt 20a
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