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    1201D Search Results

    1201D Result Highlights (5)

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    DAC1201D125HL-C18 Renesas Electronics Corporation Dual 12-bit DAC, up to 125 Msps Visit Renesas Electronics Corporation
    DAC1201D125-DB Renesas Electronics Corporation DAC1201D125 Visit Renesas Electronics Corporation
    DAC1201D125HL-C1 Renesas Electronics Corporation Dual 12-bit DAC, up to 125 Msps Visit Renesas Electronics Corporation
    TPS561201DDCR Texas Instruments 4.5V to 17V Input, 1A Synchronous Step-Down Voltage Regulator in 6-pin SOT-23 6-SOT-23-THIN -40 to 125 Visit Texas Instruments Buy
    TPS61201DRCT Texas Instruments 0.3V Input, 3.3V Output Voltage Boost Converter with 1.3A Switches and ''Down Mode'' in a 3x3 QFN 10-VSON -40 to 85 Visit Texas Instruments Buy
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    1201D Price and Stock

    PanJit Group PS1201-D32_R1_00301

    LOW CAPACITANCE ESD PROTECTION
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    DigiKey PS1201-D32_R1_00301 Cut Tape 10,000 1
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    KOA Speer Electronics Inc RK73H1JTTD1201D

    RES 1.2K OHM 0.5% 1/10W 0603
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    DigiKey RK73H1JTTD1201D Digi-Reel 7,561 1
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    Texas Instruments TPS61201DRCT

    IC REG BOOST 3.3V 1.2A 10VSON
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    DigiKey TPS61201DRCT Cut Tape 7,049 1
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    Texas Instruments TPS61201DRCR

    IC REG BOOST 3.3V 1.2A 10VSON
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    Chip Stock TPS61201DRCR 18,000
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    Win Source Electronics TPS61201DRCR 26,980
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    TE Connectivity HFW1201D00

    RELAY GEN PURPOSE DPDT 2A 26.5V
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    DigiKey HFW1201D00 Bulk 30 1
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    Interstate Connecting Components HFW1201D00 31
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    Find more 1201D price and stock on Findchips.com

    1201D Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    transistor cross reference

    Abstract: No abstract text available
    Text: Skip to content | | | Products By Type Connectors Electromechanical Components Electronic Modules Fiber Optics Filters Identification & Labeling Passive Components Power Sources RF & Microwave Products Tooling Products Touch Screen Displays Tubing, Molded and Harnessing Products


    Original     		2000Hz transistor cross reference PDF

    diode cross reference

    Abstract: IN5408 equivalent DIOTEC Electronics IN5408 diode 1N4008 PBL302 rgp20 17 diode rectifier 1N4000 1n4004 1n4002 RP602 PBP205
    Text: DIOTEC ELECTRONICS CORPORATION PRODUCT GUIDE TRUE VOID FREE VACUUM DIE SOLDERING SOFT GLASS DIODES HIGH VOLTAGE ULTRA FAST RECOVERY DISH DIODES TVS PRESS FIT WEB SITE: www.diotec-usa.com E-MAIL: [email protected] DIOTEC ELECTRONICS CORP. THE RECTIFIER SPECIALISTS


    Original     		PDF

    c151A

    Abstract: FDMS3602S
    Text: Preliminary Datasheet FDMS3602S Dual N-Channel PowerTrench MOSFET N-Channel: 25 V, 30 A, 5.6 mΩ N-Channel: 25 V, 40 A, 2.2 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 5.6 mΩ at VGS = 10 V, ID = 15 A


    Original     		FDMS3602S c151A FDMS3602S PDF

    Untitled

    Abstract: No abstract text available
    Text: FDMS7606 Dual N-Channel PowerTrench MOSFET Q1: 30 V, 12 A, 11.4 mΩ Q2: 30 V, 22 A, 11.6 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a ̈ Max rDS on = 11.4 mΩ at VGS = 10 V, ID = 11.5 A dual MLP package. The switch node has been internally


    Original     		FDMS7606 PDF

    2ty transistor

    Abstract: 1202D 1204D 1206D 1208D 1210D J15A
    Text: DIOTEC ELECTRONICS CORP. Data Sheet No. BUDI-1200D-1A 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 MECHANICAL SPECIFICATION FEATURES R Die Size: 0.120" Round PROPRIETARY SOFT GLASS JUNCTION PASSIVATION FOR SUPERIOR RELIABILITY AND


    Original     		BUDI-1200D-1A 12BAR 2ty transistor 1202D 1204D 1206D 1208D 1210D J15A PDF

    Untitled

    Abstract: No abstract text available
    Text: PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 8 mΩ at VGS = 10 V, ID = 13 A dual PQFN package. The switch node has been internally


    Original     		FDMS3664S FDMS3664S PDF

    Untitled

    Abstract: No abstract text available
    Text: PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 5.6 mΩ at VGS = 10 V, ID = 15 A dual PQFN package. The switch node has been internally


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: FDMS3610S PowerTrench Power Stage 25V Asymmetric Dual N-Channel MOSFET General Description Features Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 5.0 mΩ at VGS = 10 V, ID = 17.5 A dual PQFN package. The switch node has been internally


    Original     		FDMS3610S PDF

    1201D

    Abstract: No abstract text available
    Text: PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 8 mΩ at VGS = 10 V, ID = 13 A dual PQFN package. The switch node has been internally


    Original     		FDMS3664S FDMS3664S 1201D PDF

    AO-A15

    Abstract: 8l35 MCM72F6 MCM72F7
    Text: MOTOROLA SEMICONDUCTOR Order TECHNICAL DATA this document by MCM72F6/D — – Advance Information 512KB and 1MB Synchronous Fast Static RAM Module MCM72F6 MCM72F7 The MCM72F6 512KB is configured as 64K x 72 bits and the MCM72F7 (1 MB) is configured as 128K x 72 bits, Both are packaged in a 168 pin dual–in–line memory


    Original     		MCM72F6/D 512KB MCM72F6 MCM72F7 512KB) Box5405, l-303-675-21400 rl-600-441-2447 AO-A15 8l35 MCM72F6 MCM72F7 PDF

    Untitled

    Abstract: No abstract text available
    Text: PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a ̈ Max rDS on = 8 mΩ at VGS = 10 V, ID = 13 A dual PQFN package. The switch node has been internally


    Original     		PDF

    FDMS3620S

    Abstract: No abstract text available
    Text: FDMS3620S PowerTrench PowerStage 25V Asymmetric Dual N-Channel MOSFET General Description Features Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a ̈ Max rDS on = 4.7 mΩ at VGS = 10 V, ID = 17.5 A dual PQFN package. The switch node has been internally


    Original     		FDMS3620S FDMS3620S PDF

    fdms3600

    Abstract: FDMS3600S N9OC
    Text: PowerTrench Power Stage 25 V Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 5.6 mΩ at VGS = 10 V, ID = 15 A dual PQFN package. The switch node has been internally


    Original     		FDMS3600S FDMS3600S fdms3600 N9OC PDF

    N9CC

    Abstract: FDMS3606AS 150 mh inductor
    Text: FDMS3606AS PowerTrench Power Stage 30 V Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 8 mΩ at VGS = 10 V, ID = 13 A dual PQFN package. The switch node has been internally


    Original     		FDMS3606AS FDMS3606AS N9CC 150 mh inductor PDF

    11-CQ2

    Abstract: 22CF
    Text: PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 8 mΩ at VGS = 10 V, ID = 13 A dual PQFN package. The switch node has been internally


    Original     		FDMS3668S FDMS3668S 11-CQ2 22CF PDF

    2545 power n-channel mosfet

    Abstract: No abstract text available
    Text: FDMS3626S PowerTrench Power Stage 25V Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 5.0 mΩ at VGS = 10 V, ID = 17.5 A dual PQFN package. The switch node has been internally


    Original     		FDMS3626S FDMS3626S 2545 power n-channel mosfet PDF

    FDMS7602S

    Abstract: 501B 8 P
    Text: FDMS7602S Dual N-Channel PowerTrench MOSFET Q1: 30 V, 30 A, 7.5 mΩ Q2: 30 V, 30 A, 5.0 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 7.5 mΩ at VGS = 10 V, ID = 12 A dual MLP package.The switch node has been internally


    Original     		FDMS7602S FDMS7602S 501B 8 P PDF

    FDMS3606AS

    Abstract: No abstract text available
    Text: FDMS3606AS PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 8 mΩ at VGS = 10 V, ID = 13 A dual PQFN package. The switch node has been internally


    Original     		FDMS3606AS FDMS3606AS PDF

    1201-HA2

    Abstract: Allen-Bradley 1397 1321-3R80-B 1321-3R8-B 1321-3r25-b 1321-3R35-B 1201-HA1 1321-3R45-B 1321-3R8-c 1321-3R160-B
    Text: 1397 Digital DC Drive Available in either regenerative or non-regenerative configurations, the 1397 family of digital DC drives employs advanced microprocessor technology to help deliver performance, flexibility and communications options in a complete, economical drive package.


    Original     		1397-MB006 1397-MB010 1397-MB014 1397-MB018 1397-MB024 1397-MB031 1397-MB040 1397-MB050 1397-MB065 1397-MB085 1201-HA2 Allen-Bradley 1397 1321-3R80-B 1321-3R8-B 1321-3r25-b 1321-3R35-B 1201-HA1 1321-3R45-B 1321-3R8-c 1321-3R160-B PDF

    fdms3660s

    Abstract: 501B 8 P
    Text: PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 8 mΩ at VGS = 10 V, ID = 13 A dual PQFN package. The switch node has been internally


    Original     		FDMS3660S FDMS3660S 501B 8 P PDF

    Untitled

    Abstract: No abstract text available
    Text: FDMS7606 Dual N-Channel PowerTrench MOSFET Q1: 30 V, 12 A, 11.4 mΩ Q2: 30 V, 22 A, 11.6 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 11.4 mΩ at VGS = 10 V, ID = 11.5 A dual MLP package. The switch node has been internally


    Original     		FDMS7606 FDMS7606 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDMS3602AS PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 5.6 mΩ at VGS = 10 V, ID = 15 A dual PQFN package. The switch node has been internally


    Original     		FDMS3602AS PDF

    D325

    Abstract: No abstract text available
    Text: 8 Manufacturing date c o n s i s t i n g o f : 2 d i g i t s f o r the year Y Y , 2 d i g i t s old P/N Tyco (without the week ( WW) and 1 digit for the day -x-xxxxxxx-x V Code 0,6 P/N TYCO V Soldering/Wire-Wrap pins V42254-) 00 -0. 4 YYWWD +XXXX-+XXX


    OCR Scan     		DIN41612 IEC603-2 V42254-) V42254- -D325 SR10-0177-03 SR10-0157-02 V42254-B1xxx-D325- D325 PDF

    IRFD1Z3 equivalent

    Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
    Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not


    OCR Scan     		VP1204N TP8P08 5001D VP1206N 1208N 5002D 1209N VP1209N IRFD1Z3 equivalent 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit PDF