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    1206-8 CHIPFET LAYOUT Search Results

    1206-8 CHIPFET LAYOUT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MGN1D120603MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-6/-3V GAN Visit Murata Manufacturing Co Ltd
    1206CS-030XJBC Coilcraft Inc General Purpose Inductor, 0.0033uH, 5%, 1 Element, Ceramic-Core, SMD, 1408, CHIP Visit Coilcraft Inc Buy
    1206CS-100XJLC Coilcraft Inc General Purpose Inductor, 0.01uH, 5%, 1 Element, Ceramic-Core, SMD, 1409, CHIP, 1409, ROHS COMPLIANT Visit Coilcraft Inc
    1206CS-101XJBC Coilcraft Inc General Purpose Inductor, 0.1uH, 5%, 1 Element, Ceramic-Core, SMD, 1408, CHIP Visit Coilcraft Inc Buy
    1206CS-102XJBC Coilcraft Inc General Purpose Inductor, 1uH, 5%, 1 Element, Ceramic-Core, SMD, 1408, CHIP Visit Coilcraft Inc Buy

    1206-8 CHIPFET LAYOUT Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Si5935DC Vishay Siliconix Dual P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.086 at VGS = - 4.5 V - 4.1 0.121 at VGS = - 2.5 V - 3.4 0.171 at VGS = - 1.8 V - 2.9 1206-8 ChipFET APPLICATIONS • Load Switch • PA Switch


    Original     		Si5935DC 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si5935DC Vishay Siliconix Dual P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.086 at VGS = - 4.5 V - 4.1 0.121 at VGS = - 2.5 V - 3.4 0.171 at VGS = - 1.8 V - 2.9 1206-8 ChipFET APPLICATIONS • Load Switch • PA Switch


    Original     		Si5935DC 2002/95/EC Si5935DC-T1-E3 Si5935DC-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si5935DC Vishay Siliconix Dual P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.086 at VGS = - 4.5 V - 4.1 0.121 at VGS = - 2.5 V - 3.4 0.171 at VGS = - 1.8 V - 2.9 1206-8 ChipFET APPLICATIONS • Load Switch • PA Switch


    Original     		Si5935DC 2002/95/EC Si5935DC-T1-E3 Si5935DC-T1-GE3 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si5457DC Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.036 at VGS = - 4.5 V - 6a 0.041 at VGS = - 3.6 V - 6a 0.056 at VGS = - 2.5 V - 6a Qg (Typ.) 12.5 nC 1206-8 ChipFET APPLICATIONS • Portable Devices


    Original     		Si5457DC 2002/95/EC Si5457DC-Telectronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si5457DC Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.036 at VGS = - 4.5 V - 6a 0.041 at VGS = - 3.6 V - 6a 0.056 at VGS = - 2.5 V - 6a Qg (Typ.) 12.5 nC 1206-8 ChipFET APPLICATIONS • Portable Devices


    Original     		Si5457DC 2002/95/EC Si5457DC-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    S83054

    Abstract: No abstract text available
    Text: Si5402BDC Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.035 at VGS = 10 V 6.7 0.042 at VGS = 4.5 V 6.1 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET 1206-8 ChipFET®


    Original     		Si5402BDC Si5402BDC-T1-E3 Si5402BDC-T1-GE3 11-Mar-11 S83054 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si5402BDC Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.035 at VGS = 10 V 6.7 0.042 at VGS = 4.5 V 6.1 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET 1206-8 ChipFET®


    Original     		Si5402BDC Si5402BDC-T1-E3 Si5402BDC-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si5457DC Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.036 at VGS = - 4.5 V - 6a 0.041 at VGS = - 3.6 V - 6a 0.056 at VGS = - 2.5 V - 6a Qg (Typ.) 12.5 nC 1206-8 ChipFET APPLICATIONS • Portable Devices


    Original     		Si5457DC 2002/95/EC Si5457DC-emarks 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Si5435BDC-T1-GE3

    Abstract: SI5435BDC
    Text: Si5435BDC Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.045 at VGS = - 10 V - 5.9 0.080 at VGS = - 4.5 V - 4.4 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs 1206-8 ChipFET®


    Original     		Si5435BDC Si5435BDC-T1-E3 Si5435BDC-T1-GE3 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si5402BDC Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.035 at VGS = 10 V 6.7 0.042 at VGS = 4.5 V 6.1 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET 1206-8 ChipFET®


    Original     		Si5402BDC Si5402BDC-T1-E3 Si5402BDC-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    SI5435b

    Abstract: Si5435BDC-T1-GE3 AN811 Si5435 SI5435BDC
    Text: Si5435BDC Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.045 at VGS = - 10 V - 5.9 0.080 at VGS = - 4.5 V - 4.4 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs 1206-8 ChipFET®


    Original     		Si5435BDC Si5435BDC-T1-E3 Si5435BDC-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SI5435b AN811 Si5435 PDF

    SI5435BDC

    Abstract: No abstract text available
    Text: Si5435BDC Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.045 at VGS = - 10 V - 5.9 0.080 at VGS = - 4.5 V - 4.4 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs 1206-8 ChipFET®


    Original     		Si5435BDC Si5435BDC-T1-E3 Si5435BDC-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si5402BDC Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.035 at VGS = 10 V 6.7 0.042 at VGS = 4.5 V 6.1 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET 1206-8 ChipFET®


    Original     		Si5402BDC Si5402BDC-T1-E3 Si5402BDC-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    SI5435BDC

    Abstract: No abstract text available
    Text: Si5435BDC Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.045 at VGS = - 10 V - 5.9 0.080 at VGS = - 4.5 V - 4.4 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs 1206-8 ChipFET®


    Original     		Si5435BDC Si5435BDC-T1-E3 Si5435BDC-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    so8 pcb pattern

    Abstract: 1206-8 chipfet layout vishay so-8 pin dimensions
    Text: AND8237/D Low VCE sat BJT in 1206A ChipFETt Package Recommended Pad Pattern and Thermal Performance http://onsemi.com APPLICATION NOTE INTRODUCTION Basic Pad Patterns The basic pad layout with dimensions is shown in Figure 2. This is sufficient for low VCE(sat) BJT applications,


    Original     		AND8237/D so8 pcb pattern 1206-8 chipfet layout vishay so-8 pin dimensions PDF

    Untitled

    Abstract: No abstract text available
    Text: AND8061/D Dual-Channel 1206A ChipFETt Power MOSFET Recommended Pad Pattern and Thermal Performance http://onsemi.com APPLICATION NOTE Introduction New ON Semiconductor ChipFETs in the leadless 1206A package features the same outline as popular 1206A resistors and capacitors but provide all the performance of


    Original     		AND8061/D r14525 PDF

    ta811

    Abstract: No abstract text available
    Text: TA811 Vishay Siliconix Single-Channel 1206-8 ChipFETt Power MOSFET Recommended Pad Pattern and Thermal Performance Michael Speed INTRODUCTION New Vishay Siliconix ChipFETst in the leadless 1206-8 package feature the same outline as popular 1206-8 resistors


    Original     		TA811 28-Mar-00 ta811 PDF

    AN811

    Abstract: 1206-8 chipfet layout 1206 pads layout 1206 8 ChipFET Resistor dimensions 1206 to mm AN812
    Text: AN811 Vishay Siliconix Single-Channel 1206-8 ChipFETr Power MOSFET Recommended Pad Pattern and Thermal Performance INTRODUCTION New Vishay Siliconix ChipFETs in the leadless 1206-8 package feature the same outline as popular 1206-8 resistors and capacitors but provide all the performance of true power


    Original     		AN811 AN812 12-Dec-03 AN811 1206-8 chipfet layout 1206 pads layout 1206 8 ChipFET Resistor dimensions 1206 to mm AN812 PDF

    AN811

    Abstract: No abstract text available
    Text: AN811 Vishay Siliconix Single-Channel 1206-8 ChipFETt Power MOSFET Recommended Pad Pattern and Thermal Performance Michael Speed INTRODUCTION The legs of the device are very short, again helping to reduce the thermal path to the external heatsink/pcb and allowing a


    Original     		AN811 28-Mar-00 AN811 PDF

    Untitled

    Abstract: No abstract text available
    Text: AND8044/D Single-Channel 1206A ChipFETt Power MOSFET Recommended Pad Pattern and Thermal Performance http://onsemi.com APPLICATION NOTE INTRODUCTION New ON Semiconductor ChipFETs in the leadless 1206A package feature the same outline as popular 1206A resistors and capacitors but provide all the performance of


    Original     		AND8044/D r14525 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si5475BDC Vishay Siliconix P-Channel 12-V D-S MOSFET PRODUCT SUMMARY - 12 FEATURES RDS(on) (Ω) ID (A)a 0.028 at VGS = - 4.5 V -6 VDS (V) 0.039 at VGS = - 2.5V -6 0.054 at VGS = - 1.8 V -6 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET: 1.8 V Rated


    Original     		Si5475BDC Si5475BDC-T1-E3 Si5475BDC-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si5475BDC Vishay Siliconix P-Channel 12-V D-S MOSFET PRODUCT SUMMARY - 12 FEATURES RDS(on) (Ω) ID (A)a 0.028 at VGS = - 4.5 V -6 VDS (V) 0.039 at VGS = - 2.5V -6 0.054 at VGS = - 1.8 V -6 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET: 1.8 V Rated


    Original     		Si5475BDC Si5475BDC-T1-E3 Si5475BDC-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    1206 8 ChipFET

    Abstract: No abstract text available
    Text: Si5475BDC Vishay Siliconix P-Channel 12-V D-S MOSFET PRODUCT SUMMARY - 12 FEATURES RDS(on) (Ω) ID (A)a 0.028 at VGS = - 4.5 V -6 VDS (V) 0.039 at VGS = - 2.5V -6 0.054 at VGS = - 1.8 V -6 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET: 1.8 V Rated


    Original     		Si5475BDC Si5475BDC-T1-E3 Si5475BDC-T1-GE3 11-Mar-11 1206 8 ChipFET PDF

    1206 8 ChipFET

    Abstract: No abstract text available
    Text: AND8044/D Single-Channel 1206A ChipFETt Power MOSFET Recommended Pad Pattern and Thermal Performance http://onsemi.com APPLICATION NOTE INTRODUCTION New ON Semiconductor ChipFETs in the leadless 1206A package feature the same outline as popular 1206A resistors and capacitors but provide all the performance of


    Original     		AND8044/D r14525 AND8044/D 1206 8 ChipFET PDF