Untitled
Abstract: No abstract text available
Text: AC Adapter 12VDC/500mA 412-112055 1.73 1.93 2.56 3.5mm 1.3mm .470 Dimensions: in. except where noted SPECIFICATIONS: • Primary voltage: 120VAC 60Hz 15W • Exciting current, open circuit: 120mA max. • DC resistance ± 10%: 125Ω • Secondary, no load voltage: 17.7VDC
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12VDC/500mA
120VAC
120mA
12VDC
500mA
500VDC
500VAC
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15VAC
Abstract: No abstract text available
Text: AC Adapter 15VAC/400mA 412-215042 1.73 Dimensions: in. except where noted 1.93 2.56 2.5mm .55 SPECIFICATIONS: • Primary voltage: 120VAC 60Hz 12W • Exciting current, open circuit: 120mA max. • DC resistance ± 15%: 125Ω • Secondary, no load voltage: 17.4VAC
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15VAC/400mA
120VAC
120mA
15VAC
400mA
500VDC
500VAC
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MJE5180
Abstract: 5182 MJE5181 MJE5182
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors MJE5180/5181/5182 DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 120V(Min)- MJE5180 = 140V(Min)- MJE5181 = 160V(Min)- MJE5182 ·Low Saturation Voltage ·Complement to Type MJE5170/5171/5172
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MJE5180/5181/5182
MJE5180
MJE5181
MJE5182
MJE5170/5171/5172
MJE5180
5182
MJE5181
MJE5182
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2SC3835
Abstract: transistor 2sc3835 Humidifier 2SC3835 equivalent dc-dc converter 12v to 5v 3a npn transistor 3A
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3835 DESCRIPTION •Low Collector Saturation Voltage : VCE sat = 0.5V(Max)@ IC=3A ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 120V (Min) ·Good Linearity of hFE APPLICATIONS
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2SC3835
2SC3835
transistor 2sc3835
Humidifier
2SC3835 equivalent
dc-dc converter 12v to 5v 3a
npn transistor 3A
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BDT87F
Abstract: NPN Transistor VCEO 80V 100V transistor 83F BDT81F BDT83F BDT85F TC2536
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BDT81F/83F/85F/87F DESCRIPTION •DC Current Gain -hFE = 40 Min @ IC= 5A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 60V(Min)- BDT81F; 80V(Min)- BDT83F; 100V(Min)- BDT85F; 120V(Min)- BDT87F
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BDT81F/83F/85F/87F
BDT81F;
BDT83F;
BDT85F;
BDT87F
BDT82F/84F/86F/88F
BDT81F
BDT83F
BDT87F
NPN Transistor VCEO 80V 100V
transistor 83F
BDT81F
BDT83F
BDT85F
TC2536
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2SA1201
Abstract: 2SC2881
Text: Transistors SMD Type Voltage Amplifier Applications 2SC2881 Features High Voltage : VCEO = 120V High Transition Frequency : fT = 120MHz typ. Small Flat Package Complementary to 2SA1201 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Emitter Voltage
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2SC2881
120MHz
2SA1201
100mA
500mA
2SA1201
2SC2881
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j293
Abstract: J294 J292
Text: SIDE ENTRY MODULAR SMT JACK 4P PROFILE=11.50MM UNSHIELDED SPECIFICATIONS Insulation Resistance: 500MΩ Min. Contact Resistance: 20mΩ Max. Rating Current: 1.5A Max. Rating Voltage: 120V AC. Dielectric Voltage: 1000 Vrms 60 Sec. Min. Temperature Range: -40ºc / +85ºc
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10P10C
10P8C
j293
J294
J292
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Untitled
Abstract: No abstract text available
Text: SIDE ENTRY 4-PORT MODULAR PCB JACK 10P PROFILE=12.00MM FULLY SHIELDED SPECIFICATIONS Insulation Resistance: 500MΩ Min. Contact Resistance: 20mΩ Max. Rating Current: 1.5A Max. Rating Voltage: 120V AC. Dielectric Voltage: 1000 Vrms 60 Sec. Min. Temperature Range: -40ºc / +85ºc
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10P10C
10P8C
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2sc3906k
Abstract: No abstract text available
Text: 2SC4102 / 2SC3906K Datasheet NPN 50mA 120V High Voltage Amplifier transistors lOutline Parameter Value VCEO IC 120V 50mA UMT3 SMT3 Collector Collector Base Base Emitter Emitter 2SC4102 SOT-323 SC-70 lFeatures 1) High Breakdown Voltage (VCEO=120V). 2SC3906K
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2SC4102
2SC3906K
2SC4102
OT-323
SC-70)
OT-346
SC-59)
2SA1579
2SA1514K
2sc3906k
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Untitled
Abstract: No abstract text available
Text: SIDE ENTRY 4-PORT MAGNETIC 10/100 BASE-T JACK WITH LED 8P FULLY SHIELDED SPECIFICATIONS Insulation Resistance: 500MΩ Min. Contact Resistance: 20mΩ Max. Rating Current: 1.5A Max. Rating Voltage: 120V AC. Dielectric Voltage: 1000 Vrms 60 Sec. Min. Temperature Range: -40ºc / +85ºc
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Untitled
Abstract: No abstract text available
Text: TOP ENTRY MODULAR SMT JACK 6P PROFILE=15.70MM UNSHIELDED SPECIFICATIONS Insulation Resistance: 500MΩ Min. Contact Resistance: 20mΩ Max. Rating Current: 1.5A Max. Rating Voltage: 120V AC. Dielectric Voltage: 1000 Vrms 60 Sec. Min. Temperature Range: -40ºc / +85ºc
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Untitled
Abstract: No abstract text available
Text: SIDE ENTRY 2-PORT UP LATCH MODULAR PCB JACK WITH LED 8P PROFILE=13.60MM FULLY SHIELDED SPECIFICATIONS Insulation Resistance: 500MΩ Min. Contact Resistance: 20mΩ Max. Rating Current: 1.5A Max. Rating Voltage: 120V AC. Dielectric Voltage: 1000 Vrms 60 Sec. Min.
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Untitled
Abstract: No abstract text available
Text: SIDE ENTRY UP LATCH MODULAR PCB JACK 8P PROFILE=13.46MM FULLY SHIELDED SPECIFICATIONS Insulation Resistance: 500MΩ Min. Contact Resistance: 20mΩ Max. Rating Current: 1.5A Max. Rating Voltage: 120V AC. Dielectric Voltage: 1000 Vrms 60 Sec. Min. Temperature Range: -40ºc / +85ºc
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Untitled
Abstract: No abstract text available
Text: TOP ENTRY MODULAR PCB JACK 4P PROFILE=15.00MM UNSHIELDED SPECIFICATIONS Insulation Resistance: 500MΩ Min. Contact Resistance: 20mΩ Max. Rating Current: 1.5A Max. Rating Voltage: 120V AC. Dielectric Voltage: 1000 Vrms 60 Sec. Min. Temperature Range: -40ºc / +85ºc
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Untitled
Abstract: No abstract text available
Text: TOP ENTRY MODULAR PCB JACK 4P+6P+8P+10P PROFILE=12.70MM UNSHIELDED SPECIFICATIONS Insulation Resistance: 500MΩ Min. Contact Resistance: 20mΩ Max. Rating Current: 1.5A Max. Rating Voltage: 120V AC. Dielectric Voltage: 1000 Vrms 60 Sec. Min. Temperature Range: -40ºc / +85ºc
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10P10C
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Untitled
Abstract: No abstract text available
Text: SIDE ENTRY UP LATCH MODULAR PCB JACK WITH LED 8P PROFILE=13.46MM FULLY SHIELDED SPECIFICATIONS MATERIALS Insulation Resistance: 500MΩ Min. Contact Resistance: 20mΩ Max. Rating Current: 1.5A Max. Rating Voltage: 120V AC. Dielectric Voltage: 1000 Vrms 60 Sec. Min.
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MJ2T-88xUxx04
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Untitled
Abstract: No abstract text available
Text: SIDE ENTRY MODULAR PCB JACK 8P PROFILE=13.60MM FULLY SHIELDED SPECIFICATIONS Insulation Resistance: 500MΩ Min. Contact Resistance: 20mΩ Max. Rating Current: 1.5A Max. Rating Voltage: 120V AC. Dielectric Voltage: 1000 Vrms 60 Sec. Min. Temperature Range: -40ºc / +85ºc
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MJxxHT-88xB
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Untitled
Abstract: No abstract text available
Text: TOP ENTRY MODULAR PCB JACK 8P PROFILE=12.70MM UNSHIELDED SPECIFICATIONS Insulation Resistance: 500MΩ Min. Contact Resistance: 20mΩ Max. Rating Current: 1.5A Max. Rating Voltage: 120V AC. Dielectric Voltage: 1000 Vrms 60 Sec. Min. Temperature Range: -40ºc / +85ºc
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Untitled
Abstract: No abstract text available
Text: SIDE ENTRY EMBEDDED MODULAR SMT JACK 8P PROFILE=9.58MM UNSHIELDED SPECIFICATIONS Insulation Resistance: 500MΩ Min. Contact Resistance: 20mΩ Max. Rating Current: 1.5A Max. Rating Voltage: 120V AC. Dielectric Voltage: 1000 Vrms 60 Sec. Min. Temperature Range: -40ºc / +85ºc
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Untitled
Abstract: No abstract text available
Text: SIDE ENTRY UP LATCH MODULAR PCB JACK 4P PROFILE=14.50MM UNSHIELDED SPECIFICATIONS Insulation Resistance: 500MΩ Min. Contact Resistance: 20mΩ Max. Rating Current: 1.5A Max. Rating Voltage: 120V AC. Dielectric Voltage: 1000 Vrms 60 Sec. Min. Temperature Range: -40ºc / +85ºc
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10P10C
10P8C
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ltach
Abstract: No abstract text available
Text: SIDE ENTRY UP LTACH MODULAR PCB JACK WITH LED 8P PROFILE=13.50MM FULLY SHIELDED SPECIFICATIONS Insulation Resistance: 500MΩ Min. Contact Resistance: 20mΩ Max. Rating Current: 1.5A Max. Rating Voltage: 120V AC. Dielectric Voltage: 1000 Vrms 60 Sec. Min.
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2N5551
Abstract: No abstract text available
Text: TOSHIBA TRANSISTOR 2N5551 SILICON NPN EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE HIGH VOLTAGE AMPLIFIER APPLICATIONS. . High Collector Breakdown Voltage : VCBO=180V, VcEO=160V . Low Leakage Current : IcBO= 50nA(Max.) @ VcB=120V . Low Saturation Voltage
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2N5551
100MHz
2N5551
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2N5401
Abstract: No abstract text available
Text: i TOSHIBA TRANSISTOR 2N5401 SILICON PNP EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE HIGH VOLTAGE AMPLIFIER APPLICATIONS. . High Collector Breakdown Voltage : VC b o =-160V, VCe o = -150V . Low Leakage Current : ICB0=5-50nA(Max. ) @ V c b = - 120V
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2N5401
-160V,
5-50nA
-50mA,
-10mA
100MHz
10Hz-15
2N5401
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P546G
Abstract: TLP546G E67149 TLP546 e6714
Text: TOSHIBA {DISCRETE/OPTO} TT 9097250 TOSHIBA DISCRETE/OPTO DE I TDTTESO DD17455 99D 17455 TLP546G GaAs IRED & PHOTO-THYRISTOR CONTROL IA(RHS) O f 120VAC LIKE. MOTOR CONTROLS. COtfTROLlER. COPIER. H O C ELECTRIC MACHINE. . . . . : IT <H>lS) • IA (Single Phase Pull Wave,
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DD17455
TLP546G
120VAC
BVs-2500V
E67149
P546G
TLP546C.
T2-60
3K-15kft
TLP546G
E67149
TLP546
e6714
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